DE3940394A1 - Verfahren zum herstellen einer halbleitervorrichtung - Google Patents
Verfahren zum herstellen einer halbleitervorrichtungInfo
- Publication number
- DE3940394A1 DE3940394A1 DE19893940394 DE3940394A DE3940394A1 DE 3940394 A1 DE3940394 A1 DE 3940394A1 DE 19893940394 DE19893940394 DE 19893940394 DE 3940394 A DE3940394 A DE 3940394A DE 3940394 A1 DE3940394 A1 DE 3940394A1
- Authority
- DE
- Germany
- Prior art keywords
- film
- conductivity type
- conductive film
- dopant
- oxidn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009413 insulation Methods 0.000 title abstract 5
- 230000001681 protective effect Effects 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002019 doping agent Substances 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30690088A JPH02153534A (ja) | 1988-12-06 | 1988-12-06 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3940394A1 true DE3940394A1 (de) | 1990-06-07 |
DE3940394C2 DE3940394C2 (de) | 1997-08-28 |
Family
ID=17962615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19893940394 Expired - Fee Related DE3940394C2 (de) | 1988-12-06 | 1989-12-06 | Verfahren zur Herstellung eines Bipolartransistors |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH02153534A (de) |
DE (1) | DE3940394C2 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0527372A1 (de) * | 1991-07-24 | 1993-02-17 | Canon Kabushiki Kaisha | Verfahren zur Herstellung eines Bipolar-Transistors |
EP0650186A1 (de) * | 1993-10-25 | 1995-04-26 | Koninklijke Philips Electronics N.V. | Herstellungsverfahren für eine Halbleitervorrichtung in welcher eine Halbleiterzone durch Diffusion aus einem polykristallinen Siliziumband geformd wird |
EP0778615A1 (de) * | 1995-12-06 | 1997-06-11 | Nec Corporation | Bipolar-Transistor und Verfahren zu seiner Herstellung |
EP0942467A1 (de) * | 1998-03-12 | 1999-09-15 | Lucent Technologies Inc. | Herstellungsverfahren für bipolare und BiCMOS Bauelemente |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54155778A (en) * | 1978-05-30 | 1979-12-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS587862A (ja) * | 1981-06-30 | 1983-01-17 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | バイポ−ラ型トランジスタ−構造体及びその製造方法 |
EP0042380B1 (de) * | 1979-12-28 | 1986-03-19 | International Business Machines Corporation | Verfahren zum erreichen eines idealen fremdstoffkonzentrationsverlaufs für die basiszone eines transistors |
US4581319A (en) * | 1983-08-26 | 1986-04-08 | Siemens Aktiengesellschaft | Method for the manufacture of bipolar transistor structures with self-adjusting emitter and base regions for extreme high frequency circuits |
JPH0681862A (ja) * | 1992-09-07 | 1994-03-22 | Nippondenso Co Ltd | スタータクラッチ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843539A (ja) * | 1981-09-08 | 1983-03-14 | Nec Corp | 半導体装置 |
JPS5850755A (ja) * | 1981-09-21 | 1983-03-25 | Nippon Denso Co Ltd | 半導体装置 |
JPS61283167A (ja) * | 1985-06-07 | 1986-12-13 | Nec Corp | 半導体装置の製造方法 |
-
1988
- 1988-12-06 JP JP30690088A patent/JPH02153534A/ja active Pending
-
1989
- 1989-12-06 DE DE19893940394 patent/DE3940394C2/de not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54155778A (en) * | 1978-05-30 | 1979-12-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
EP0042380B1 (de) * | 1979-12-28 | 1986-03-19 | International Business Machines Corporation | Verfahren zum erreichen eines idealen fremdstoffkonzentrationsverlaufs für die basiszone eines transistors |
JPS587862A (ja) * | 1981-06-30 | 1983-01-17 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | バイポ−ラ型トランジスタ−構造体及びその製造方法 |
US4581319A (en) * | 1983-08-26 | 1986-04-08 | Siemens Aktiengesellschaft | Method for the manufacture of bipolar transistor structures with self-adjusting emitter and base regions for extreme high frequency circuits |
JPH0681862A (ja) * | 1992-09-07 | 1994-03-22 | Nippondenso Co Ltd | スタータクラッチ |
Non-Patent Citations (3)
Title |
---|
JP 62-188370 A. In: Patents Abstracts of Japan, Sect. E, Vol. 12, 1988, No. 35 * |
US-Buch: IEDM'86, 1986, S. 420 * |
US-Z: IEEE Trans. on Electron. Devices, Bd. ED-53,April 1986, S. 526-531 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0527372A1 (de) * | 1991-07-24 | 1993-02-17 | Canon Kabushiki Kaisha | Verfahren zur Herstellung eines Bipolar-Transistors |
US5731240A (en) * | 1991-07-24 | 1998-03-24 | Canon Kabushiki Kaisha | Manufacturing method for semiconductor depositing device |
EP0650186A1 (de) * | 1993-10-25 | 1995-04-26 | Koninklijke Philips Electronics N.V. | Herstellungsverfahren für eine Halbleitervorrichtung in welcher eine Halbleiterzone durch Diffusion aus einem polykristallinen Siliziumband geformd wird |
BE1007670A3 (nl) * | 1993-10-25 | 1995-09-12 | Philips Electronics Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een halfgeleiderzone wordt gevormd door diffusie vanuit een strook polykristallijn silicium. |
EP0778615A1 (de) * | 1995-12-06 | 1997-06-11 | Nec Corporation | Bipolar-Transistor und Verfahren zu seiner Herstellung |
US6034412A (en) * | 1995-12-06 | 2000-03-07 | Nec Corporation | Semiconductor device and method of fabricating the same |
US6165860A (en) * | 1995-12-06 | 2000-12-26 | Nec Corporation | Semiconductor device with reduced photolithography steps |
EP0942467A1 (de) * | 1998-03-12 | 1999-09-15 | Lucent Technologies Inc. | Herstellungsverfahren für bipolare und BiCMOS Bauelemente |
Also Published As
Publication number | Publication date |
---|---|
DE3940394C2 (de) | 1997-08-28 |
JPH02153534A (ja) | 1990-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8381 | Inventor (new situation) |
Free format text: NAKAJIMA, HIROOMI, YOKOHAMA, JP ITOH, NOBUYUKI, TOKIO/TOKYO, JP NIHIRA, HIROYUKI, AYASE, KANAGAWA, JP TSUKIOKA, EIRYO, TOKOROZAWA, SAITAMA, JP HIRAKAWA, KENJI, YOKOHAMA, JP TAKA, SHIN-ICHI, YOKOSUKA, KANAGAWA, JP TAKADA, HIDEKI, YOKOHAMA, JP KATSUMATA, YASUHIRO, CHIGASAKI, KANAGAWA, JP YAMAGUCHI, TOSHIO, TOKIO/TOKYO, JP |
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8339 | Ceased/non-payment of the annual fee |