DE3884580T2 - Verfahren zur Züchtung von Diamant. - Google Patents

Verfahren zur Züchtung von Diamant.

Info

Publication number
DE3884580T2
DE3884580T2 DE88119329T DE3884580T DE3884580T2 DE 3884580 T2 DE3884580 T2 DE 3884580T2 DE 88119329 T DE88119329 T DE 88119329T DE 3884580 T DE3884580 T DE 3884580T DE 3884580 T2 DE3884580 T2 DE 3884580T2
Authority
DE
Germany
Prior art keywords
growing diamond
substrate
diamond
growing
nucleating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88119329T
Other languages
English (en)
Other versions
DE3884580D1 (de
Inventor
Thomas Richard Anthony
James Fulton Fleischer
Robert Charles Devries
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE3884580D1 publication Critical patent/DE3884580D1/de
Publication of DE3884580T2 publication Critical patent/DE3884580T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00—Gems or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
DE88119329T 1987-12-17 1988-11-21 Verfahren zur Züchtung von Diamant. Expired - Fee Related DE3884580T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13443687A 1987-12-17 1987-12-17

Publications (2)

Publication Number Publication Date
DE3884580D1 DE3884580D1 (de) 1993-11-04
DE3884580T2 true DE3884580T2 (de) 1994-02-24

Family

ID=22463387

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88119329T Expired - Fee Related DE3884580T2 (de) 1987-12-17 1988-11-21 Verfahren zur Züchtung von Diamant.

Country Status (10)

Country Link
EP (1) EP0320657B1 (de)
JP (1) JPH0651600B2 (de)
KR (1) KR960009005B1 (de)
AT (1) ATE95252T1 (de)
AU (1) AU617142B2 (de)
BR (1) BR8806671A (de)
DE (1) DE3884580T2 (de)
IL (1) IL88195A (de)
IN (1) IN170791B (de)
ZA (1) ZA888034B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
US5206083A (en) * 1989-09-18 1993-04-27 Cornell Research Foundation, Inc. Diamond and diamond-like films and coatings prepared by deposition on substrate that contain a dispersion of diamond particles
EP0459425A1 (de) * 1990-05-30 1991-12-04 Idemitsu Petrochemical Company Limited Verfahren zur Herstellung von Diamanten
US5264071A (en) * 1990-06-13 1993-11-23 General Electric Company Free standing diamond sheet and method and apparatus for making same
CA2044543C (en) * 1990-08-10 1999-12-14 Louis Kimball Bigelow Multi-layer superhard film structure
CA2049673A1 (en) * 1990-11-26 1992-05-27 James F. Fleischer Cvd diamond by alternating chemical reactions
WO1993005207A1 (en) * 1991-09-03 1993-03-18 Chang R P H Method of nucleating diamond and article produced thereby
CA2082711A1 (en) * 1991-12-13 1993-06-14 Philip G. Kosky Cvd diamond growth on hydride-forming metal substrates
GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
DE19643550A1 (de) * 1996-10-24 1998-05-14 Leybold Systems Gmbh Lichttransparentes, Wärmestrahlung reflektierendes Schichtensystem
US6066399A (en) * 1997-03-19 2000-05-23 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
EP1488022A1 (de) 2002-03-01 2004-12-22 Stichting Voor De Technische Wetenschappen Verfahren zur herstellung einer diamantbeschichtung auf einem auf eisen basierenden substrat und verwendung eines derartigen auf eisen basierenden substrats als wirt für eine cvd-diamantbeschichtung
EP1340837A1 (de) * 2002-03-01 2003-09-03 Stichting Voor De Technische Wetenschappen Verfahren zur Diamant-Beschichtung von einem eisen-haltigen Substrat
AT525593A1 (de) * 2021-10-22 2023-05-15 Carboncompetence Gmbh Vorrichtung und Verfahren zur Herstellung dotierter Diamantschichten

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661526A (en) * 1969-06-24 1972-05-09 Univ Case Western Reserve Process for the catalytic growth of metastable crystals from the vapor phase
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS59182300A (ja) * 1983-03-30 1984-10-17 Mitsubishi Metal Corp ダイヤモンドの気相合成法
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPH0717479B2 (ja) * 1985-12-09 1995-03-01 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0725635B2 (ja) * 1986-02-28 1995-03-22 京セラ株式会社 ダイヤモンド膜の製造方法
ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
JPH0776147B2 (ja) * 1986-12-27 1995-08-16 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0776149B2 (ja) * 1987-10-15 1995-08-16 昭和電工株式会社 気相法によるダイヤモンド合成法

Also Published As

Publication number Publication date
EP0320657A1 (de) 1989-06-21
IN170791B (de) 1992-05-23
EP0320657B1 (de) 1993-09-29
IL88195A (en) 1992-12-01
ATE95252T1 (de) 1993-10-15
KR890009334A (ko) 1989-08-01
JPH0651600B2 (ja) 1994-07-06
IL88195A0 (en) 1989-06-30
BR8806671A (pt) 1989-08-29
JPH01239092A (ja) 1989-09-25
AU617142B2 (en) 1991-11-21
DE3884580D1 (de) 1993-11-04
AU2701488A (en) 1989-06-22
ZA888034B (en) 1989-06-28
KR960009005B1 (en) 1996-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee