DE3879143D1 - Verfahren zur zuechtung einer beta-siliziumcarbid-einkristall-schicht auf einem siliziumsubstrat. - Google Patents

Verfahren zur zuechtung einer beta-siliziumcarbid-einkristall-schicht auf einem siliziumsubstrat.

Info

Publication number
DE3879143D1
DE3879143D1 DE8888120580T DE3879143T DE3879143D1 DE 3879143 D1 DE3879143 D1 DE 3879143D1 DE 8888120580 T DE8888120580 T DE 8888120580T DE 3879143 T DE3879143 T DE 3879143T DE 3879143 D1 DE3879143 D1 DE 3879143D1
Authority
DE
Germany
Prior art keywords
growing
single crystal
crystal layer
carbide single
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888120580T
Other languages
English (en)
Other versions
DE3879143T2 (de
Inventor
Takashi Eshita
Fumitake Saginumadai Mieno
Yuji Furumura
Kikuo Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3879143D1 publication Critical patent/DE3879143D1/de
Application granted granted Critical
Publication of DE3879143T2 publication Critical patent/DE3879143T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H01L21/205—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE8888120580T 1987-12-19 1988-12-09 Verfahren zur zuechtung einer beta-siliziumcarbid-einkristall-schicht auf einem siliziumsubstrat. Expired - Fee Related DE3879143T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62320100A JP2534525B2 (ja) 1987-12-19 1987-12-19 β−炭化シリコン層の製造方法

Publications (2)

Publication Number Publication Date
DE3879143D1 true DE3879143D1 (de) 1993-04-15
DE3879143T2 DE3879143T2 (de) 1993-06-17

Family

ID=18117713

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888120580T Expired - Fee Related DE3879143T2 (de) 1987-12-19 1988-12-09 Verfahren zur zuechtung einer beta-siliziumcarbid-einkristall-schicht auf einem siliziumsubstrat.

Country Status (5)

Country Link
US (1) US4855254A (de)
EP (1) EP0322615B1 (de)
JP (1) JP2534525B2 (de)
KR (1) KR920004173B1 (de)
DE (1) DE3879143T2 (de)

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JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
JP2546696B2 (ja) * 1987-12-17 1996-10-23 富士通株式会社 シリコン炭化層構造
US5135885A (en) * 1989-03-27 1992-08-04 Sharp Corporation Method of manufacturing silicon carbide fets
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
US5200022A (en) * 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
WO1992022922A2 (en) * 1991-06-12 1992-12-23 Case Western Reserve University Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers
JP3214868B2 (ja) * 1991-07-19 2001-10-02 ローム株式会社 ヘテロ接合バイポーラトランジスタの製造方法
DE4135076A1 (de) * 1991-10-24 1993-04-29 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung
US5612260A (en) * 1992-06-05 1997-03-18 Cree Research, Inc. Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures
DE4234508C2 (de) * 1992-10-13 1994-12-22 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
EP0637063B1 (de) * 1993-07-30 1999-11-03 Applied Materials, Inc. Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen
US5458086A (en) * 1993-10-13 1995-10-17 Superconductor Technologies, Inc. Apparatus for growing metal oxides using organometallic vapor phase epitaxy
JPH07335562A (ja) * 1994-06-10 1995-12-22 Hoya Corp 炭化珪素の成膜方法
US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
US5972801A (en) * 1995-11-08 1999-10-26 Cree Research, Inc. Process for reducing defects in oxide layers on silicon carbide
JP3384242B2 (ja) * 1996-03-29 2003-03-10 株式会社豊田中央研究所 炭化珪素単結晶の製造方法
US5879450A (en) * 1997-08-13 1999-03-09 City University Of Hong Kong Method of heteroepitaxial growth of beta silicon carbide on silicon
US6094940A (en) * 1997-10-09 2000-08-01 Nikon Corporation Manufacturing method of synthetic silica glass
US6225672B1 (en) * 1998-08-05 2001-05-01 National Science Council Of Republic Of China High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrate
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP3650727B2 (ja) * 2000-08-10 2005-05-25 Ｈｏｙａ株式会社 炭化珪素製造方法
TW464977B (en) * 2000-11-03 2001-11-21 United Microelectronics Corp Method for peeling off silicon carbide layer
JP2002220299A (ja) * 2001-01-19 2002-08-09 Hoya Corp 単結晶ＳｉＣ及びその製造方法、ＳｉＣ半導体装置並びにＳｉＣ複合材料
EP1421607A2 (de) 2001-02-12 2004-05-26 ASM America, Inc. Verbesserter prozess zur ablagerung von halbleiterfilmen
JP5005170B2 (ja) * 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
FR2850400B1 (fr) * 2003-01-29 2005-03-11 Soitec Silicon On Insulator Carburation de surfaces de silicium au moyen d'un faisceau d'ions d'amas gazeux
US7261919B2 (en) * 2003-11-18 2007-08-28 Flx Micro, Inc. Silicon carbide and other films and method of deposition
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
FR2877140B1 (fr) * 2004-10-22 2007-02-23 Univ Claude Bernard Lyon Procede de croissance, sur substrat de silicium, de couches minces de carbure de silicium de faible courbure
JP2006179799A (ja) * 2004-12-24 2006-07-06 Toshiba Ceramics Co Ltd 窒化ガリウム系化合物半導体およびその製造方法
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
FR2888398B1 (fr) * 2005-07-05 2007-12-21 Commissariat Energie Atomique Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
US7718518B2 (en) * 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
EP1842940A1 (de) * 2006-04-06 2007-10-10 Interuniversitair Microelektronica Centrum ( Imec) Verfahren zur Herstellung eines III-Nitridmaterials auf einem Siliziumsubstrat
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
TWI449087B (zh) * 2008-10-01 2014-08-11 Nat Univ Tsing Hua A method for growing a silicon carbide film on a (100) silicon substrate
JP2010095431A (ja) * 2008-10-20 2010-04-30 Toyota Motor Corp ＳｉＣ薄膜形成装置
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
WO2011068884A2 (en) 2009-12-01 2011-06-09 University Of Massachusetts A system for producing patterned silicon carbide structures
JP5696543B2 (ja) * 2011-03-17 2015-04-08 セイコーエプソン株式会社 半導体基板の製造方法
SE536605C2 (sv) * 2012-01-30 2014-03-25 Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi
US8860040B2 (en) * 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9546420B1 (en) * 2012-10-08 2017-01-17 Sandia Corporation Methods of depositing an alpha-silicon-carbide-containing film at low temperature
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP2015145536A (ja) * 2015-03-24 2015-08-13 セイコーエプソン株式会社 立方晶炭化珪素膜の製造方法
RU2578104C1 (ru) * 2015-04-07 2016-03-20 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) Способ газофазной карбидизации поверхности монокристаллического кремния ориентации (111), (100)
EP3503163A1 (de) * 2017-12-21 2019-06-26 EpiGan NV Verfahren zur herstellung einer siliciumcarbidfolie auf einem siliciumsubstrat
CN109599329B (zh) * 2018-12-05 2023-08-08 江西兆驰半导体有限公司 一种硅衬底上生长氮极性iii族氮化物半导体层的方法

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DE2364989C3 (de) * 1973-12-28 1979-10-18 Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat
US3956032A (en) * 1974-09-24 1976-05-11 The United States Of America As Represented By The United States National Aeronautics And Space Administration Process for fabricating SiC semiconductor devices
US4459338A (en) * 1982-03-19 1984-07-10 The United States Of America As Represented By The United States Department Of Energy Method of deposition of silicon carbide layers on substrates and product
JPS59203799A (ja) * 1983-04-28 1984-11-17 Sharp Corp 炭化珪素単結晶基板の製造方法
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si

Also Published As

Publication number Publication date
KR890011028A (ko) 1989-08-12
JP2534525B2 (ja) 1996-09-18
US4855254A (en) 1989-08-08
EP0322615A1 (de) 1989-07-05
JPH01162326A (ja) 1989-06-26
EP0322615B1 (de) 1993-03-10
DE3879143T2 (de) 1993-06-17
KR920004173B1 (ko) 1992-05-30

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee