DE3852903D1 - Hohe Durchbruchspannung aufweisende isolierende Schicht, die zwischen Polysilizium-Schichten liegt. - Google Patents
Hohe Durchbruchspannung aufweisende isolierende Schicht, die zwischen Polysilizium-Schichten liegt.Info
- Publication number
- DE3852903D1 DE3852903D1 DE3852903T DE3852903T DE3852903D1 DE 3852903 D1 DE3852903 D1 DE 3852903D1 DE 3852903 T DE3852903 T DE 3852903T DE 3852903 T DE3852903 T DE 3852903T DE 3852903 D1 DE3852903 D1 DE 3852903D1
- Authority
- DE
- Germany
- Prior art keywords
- lies
- insulating layer
- breakdown voltage
- high breakdown
- polysilicon layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015556 catabolic process Effects 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62089773A JPS63255972A (ja) | 1987-04-14 | 1987-04-14 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3852903D1 true DE3852903D1 (de) | 1995-03-16 |
DE3852903T2 DE3852903T2 (de) | 1995-06-29 |
Family
ID=13979997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3852903T Expired - Fee Related DE3852903T2 (de) | 1987-04-14 | 1988-04-12 | Hohe Durchbruchspannung aufweisende isolierende Schicht, die zwischen Polysilizium-Schichten liegt. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0287031B1 (de) |
JP (1) | JPS63255972A (de) |
KR (1) | KR910006592B1 (de) |
DE (1) | DE3852903T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6414968A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Formation of gate electrode |
DE69007447T2 (de) * | 1989-12-20 | 1994-06-30 | Nippon Electric Co | Gatestruktur eines Halbleiterbauelementes mit darin enthaltener Oxidschicht. |
KR970009976B1 (ko) * | 1991-08-26 | 1997-06-19 | 아메리칸 텔리폰 앤드 텔레그라프 캄파니 | 증착된 반도체상에 형성된 개선된 유전체 |
JP2951082B2 (ja) * | 1991-10-24 | 1999-09-20 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
JP3548984B2 (ja) * | 1991-11-14 | 2004-08-04 | 富士通株式会社 | 半導体装置の製造方法 |
JP3383140B2 (ja) * | 1995-10-02 | 2003-03-04 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
JP3233217B2 (ja) * | 1999-03-16 | 2001-11-26 | 日本電気株式会社 | 半導体装置の製造方法 |
US8124515B2 (en) * | 2009-05-20 | 2012-02-28 | Globalfoundries Inc. | Gate etch optimization through silicon dopant profile change |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
JPH0638496B2 (ja) * | 1983-06-27 | 1994-05-18 | 日本電気株式会社 | 半導体装置 |
-
1987
- 1987-04-14 JP JP62089773A patent/JPS63255972A/ja active Granted
-
1988
- 1988-04-12 DE DE3852903T patent/DE3852903T2/de not_active Expired - Fee Related
- 1988-04-12 EP EP88105805A patent/EP0287031B1/de not_active Expired - Lifetime
- 1988-04-14 KR KR1019880004263A patent/KR910006592B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS63255972A (ja) | 1988-10-24 |
KR910006592B1 (ko) | 1991-08-28 |
EP0287031A2 (de) | 1988-10-19 |
DE3852903T2 (de) | 1995-06-29 |
EP0287031A3 (en) | 1989-09-20 |
KR880013232A (ko) | 1988-11-30 |
JPH0581193B2 (de) | 1993-11-11 |
EP0287031B1 (de) | 1995-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |