DE3687185D1 - Feldeffekttransistor. - Google Patents

Feldeffekttransistor.

Info

Publication number
DE3687185D1
DE3687185D1 DE8686106814T DE3687185T DE3687185D1 DE 3687185 D1 DE3687185 D1 DE 3687185D1 DE 8686106814 T DE8686106814 T DE 8686106814T DE 3687185 T DE3687185 T DE 3687185T DE 3687185 D1 DE3687185 D1 DE 3687185D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686106814T
Other languages
English (en)
Other versions
DE3687185T2 (de
Inventor
Goro Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3687185D1 publication Critical patent/DE3687185D1/de
Publication of DE3687185T2 publication Critical patent/DE3687185T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8686106814T 1985-05-20 1986-05-20 Feldeffekttransistor. Expired - Fee Related DE3687185T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10885085 1985-05-20

Publications (2)

Publication Number Publication Date
DE3687185D1 true DE3687185D1 (de) 1993-01-14
DE3687185T2 DE3687185T2 (de) 1993-04-15

Family

ID=14495174

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686106814T Expired - Fee Related DE3687185T2 (de) 1985-05-20 1986-05-20 Feldeffekttransistor.

Country Status (5)

Country Link
EP (1) EP0203493B1 (de)
JP (1) JPS6254474A (de)
KR (1) KR900000071B1 (de)
CA (1) CA1237827A (de)
DE (1) DE3687185T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63134555U (de) * 1987-02-24 1988-09-02

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2497603A1 (fr) * 1981-01-06 1982-07-09 Thomson Csf Transistor a faible temps de commutation, de type normalement bloquant

Also Published As

Publication number Publication date
JPS6254474A (ja) 1987-03-10
JPH0262945B2 (de) 1990-12-27
DE3687185T2 (de) 1993-04-15
KR860009496A (ko) 1986-12-23
EP0203493A3 (en) 1988-05-04
KR900000071B1 (ko) 1990-01-19
EP0203493A2 (de) 1986-12-03
CA1237827A (en) 1988-06-07
EP0203493B1 (de) 1992-12-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee