DE3683461D1 - Verfahren zur herstellung einer schicht aus einem organischen glas und anwendung dieses verfahrens. - Google Patents
Verfahren zur herstellung einer schicht aus einem organischen glas und anwendung dieses verfahrens.Info
- Publication number
- DE3683461D1 DE3683461D1 DE8686113868T DE3683461T DE3683461D1 DE 3683461 D1 DE3683461 D1 DE 3683461D1 DE 8686113868 T DE8686113868 T DE 8686113868T DE 3683461 T DE3683461 T DE 3683461T DE 3683461 D1 DE3683461 D1 DE 3683461D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- layer
- application
- organic glass
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/97—Specified etch stop material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S65/00—Glass manufacturing
- Y10S65/901—Liquid phase reaction process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/793,390 US4723978A (en) | 1985-10-31 | 1985-10-31 | Method for a plasma-treated polysiloxane coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3683461D1 true DE3683461D1 (de) | 1992-02-27 |
Family
ID=25159812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8686113868T Expired - Fee Related DE3683461D1 (de) | 1985-10-31 | 1986-10-07 | Verfahren zur herstellung einer schicht aus einem organischen glas und anwendung dieses verfahrens. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4723978A (de) |
| EP (1) | EP0223987B1 (de) |
| JP (1) | JPH0730185B2 (de) |
| DE (1) | DE3683461D1 (de) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4868096A (en) * | 1986-09-09 | 1989-09-19 | Tokyo Ohka Kogyo Co., Ltd. | Surface treatment of silicone-based coating films |
| US4816112A (en) * | 1986-10-27 | 1989-03-28 | International Business Machines Corporation | Planarization process through silylation |
| US4867838A (en) * | 1986-10-27 | 1989-09-19 | International Business Machines Corporation | Planarization through silylation |
| US4801560A (en) * | 1987-10-02 | 1989-01-31 | Motorola Inc. | Semiconductor processing utilizing carbon containing thick film spin-on glass |
| NL8702352A (nl) * | 1987-10-02 | 1989-05-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JPH01199678A (ja) * | 1988-02-03 | 1989-08-11 | Mitsubishi Electric Corp | 高純度ＳｉＯ↓２薄膜の形成方法 |
| US5270259A (en) * | 1988-06-21 | 1993-12-14 | Hitachi, Ltd. | Method for fabricating an insulating film from a silicone resin using O.sub. |
| DE3837397A1 (de) * | 1988-11-03 | 1990-05-10 | Wacker Chemie Gmbh | Neue organooligosilsesquioxane |
| US4981530A (en) * | 1988-11-28 | 1991-01-01 | International Business Machines Corporation | Planarizing ladder-type silsesquioxane polymer insulation layer |
| US5270267A (en) * | 1989-05-31 | 1993-12-14 | Mitel Corporation | Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate |
| JPH0386725A (ja) * | 1989-08-31 | 1991-04-11 | Fujitsu Ltd | 絶縁物の製造方法及び半導体装置の製造方法 |
| US5043789A (en) * | 1990-03-15 | 1991-08-27 | International Business Machines Corporation | Planarizing silsesquioxane copolymer coating |
| US5114757A (en) * | 1990-10-26 | 1992-05-19 | Linde Harold G | Enhancement of polyimide adhesion on reactive metals |
| US5063267A (en) * | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
| US5114754A (en) * | 1991-01-14 | 1992-05-19 | International Business Machines Corporation | Passivation of metal in metal/polyimide structures |
| US5194928A (en) * | 1991-01-14 | 1993-03-16 | International Business Machines Corporation | Passivation of metal in metal/polyimide structure |
| JP2934353B2 (ja) * | 1992-06-24 | 1999-08-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5397741A (en) * | 1993-03-29 | 1995-03-14 | International Business Machines Corporation | Process for metallized vias in polyimide |
| US6864570B2 (en) * | 1993-12-17 | 2005-03-08 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
| US5840821A (en) * | 1994-03-11 | 1998-11-24 | Kawasaki Steel Corporation | Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution |
| US5565384A (en) * | 1994-04-28 | 1996-10-15 | Texas Instruments Inc | Self-aligned via using low permittivity dielectric |
| US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
| US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
| US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
| US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
| JP3300643B2 (ja) * | 1997-09-09 | 2002-07-08 | 株式会社東芝 | 半導体装置の製造方法 |
| JP3729226B2 (ja) * | 1997-09-17 | 2005-12-21 | 富士通株式会社 | 半導体集積回路装置及びその製造方法 |
| US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
| US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
| US6203715B1 (en) * | 1999-01-19 | 2001-03-20 | Daewoo Electronics Co., Ltd. | Method for the manufacture of a thin film actuated mirror array |
| KR100804873B1 (ko) * | 1999-06-10 | 2008-02-20 | 얼라이드시그날 인코퍼레이티드 | 포토리소그래피용 ｓｏｇ 반사방지 코팅 |
| US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
| US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
| US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
| US6969539B2 (en) * | 2000-09-28 | 2005-11-29 | President And Fellows Of Harvard College | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
| AU2003228402A1 (en) * | 2002-03-28 | 2003-10-13 | President And Fellows Of Harvard College | Vapor deposition of silicon dioxide nanolaminates |
| DE10248980B4 (de) * | 2002-10-21 | 2004-11-11 | Infineon Technologies Ag | Verfahren zur Herstellung strukturierter Schichten aus Siliziumdioxid auf senkrecht oder geneigt zu einer Substratoberfläche angeordneten Prozessflächen |
| JP2004296476A (ja) * | 2003-03-25 | 2004-10-21 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
| JP4734832B2 (ja) * | 2003-05-14 | 2011-07-27 | ナガセケムテックス株式会社 | 光素子用封止材 |
| JP2005023199A (ja) * | 2003-07-02 | 2005-01-27 | Chisso Corp | 機能性超薄膜およびその形成方法 |
| US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| US20070225465A1 (en) * | 2004-04-16 | 2007-09-27 | Toshiyuki Akiike | Composition for Sealing Optical Semiconductor, Optical Semiconductor Sealing Material, and Method for Producing Composition for Sealing Optical Semiconductor |
| JP2006156602A (ja) * | 2004-11-26 | 2006-06-15 | Asahi Kasei Corp | 絶縁膜 |
| WO2008008319A2 (en) * | 2006-07-10 | 2008-01-17 | President And Fellows Of Harvard College | Selective sealing of porous dielectric materials |
| US8642246B2 (en) * | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| DE102007040802A1 (de) | 2007-08-28 | 2009-03-05 | Evonik Degussa Gmbh | VOC-arme aminoalkyl-funktionelle Siliciumverbindungen enthaltende Zusammensetzung für Streichfarben zur Behandlung von Papier oder Folie |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| EP3080219A1 (de) | 2013-12-09 | 2016-10-19 | 3M Innovative Properties Company | Härtbare silsesquioxanpolymere, zusammensetzungen, artikel und verfahren |
| WO2015195355A1 (en) | 2014-06-20 | 2015-12-23 | 3M Innovative Properties Company | Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods |
| WO2015195391A1 (en) | 2014-06-20 | 2015-12-23 | 3M Innovative Properties Company | Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods |
| WO2016048736A1 (en) | 2014-09-22 | 2016-03-31 | 3M Innovative Properties Company | Curable polymers comprising silsesquioxane polymer core silsesquioxane polymer outer layer, and reactive groups |
| US9957416B2 (en) | 2014-09-22 | 2018-05-01 | 3M Innovative Properties Company | Curable end-capped silsesquioxane polymer comprising reactive groups |
| EP3194502A4 (de) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen |
| DE102015225879A1 (de) | 2015-12-18 | 2017-06-22 | Evonik Degussa Gmbh | Tris-(alkylalkoxysilyl)amin-reiche Zusammensetzungen, deren Herstellung und deren Verwendung |
| DE102015225883A1 (de) | 2015-12-18 | 2017-06-22 | Evonik Degussa Gmbh | Bis(alkylalkoxysilyl)amin-reiche Zusammensetzungen, ein Verfahren zur deren Herstellung und deren Verwendung |
| DE102016215256A1 (de) | 2016-08-16 | 2018-02-22 | Evonik Degussa Gmbh | Bis- und Tris(organosilyl)amine enthaltende Zusammensetzungen, deren Herstellung und deren Verwendung |
| DE102016215257A1 (de) | 2016-08-16 | 2018-02-22 | Evonik Degussa Gmbh | Mono- und Bis(organosilyl)amine enthaltende Zusammensetzungen, deren Herstellung und deren Verwendung |
| DE102016215259A1 (de) | 2016-08-16 | 2018-02-22 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Mono- und Oligo-(alkoxysilylalkyl)aminen enthaltenden Zusammensetzungen |
| DE102016215255A1 (de) | 2016-08-16 | 2018-02-22 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Bis- und Tris(alkylalkoxysilyl)amine enthaltende Zusammensetzungen und deren Verwendung |
| DE102016215260A1 (de) | 2016-08-16 | 2018-02-22 | Evonik Degussa Gmbh | Verwendung einer (Alkylalkoxysily)amin-, Bis-(alkylalkoxysilyl)amin und/oder Tris-(alkylalkoxysilyl)amin-enthaltenden Zusammensetzung |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3321350A (en) * | 1962-02-19 | 1967-05-23 | Union Carbide Corp | Organofunctional silane-hydrolyzable titanate primer compositions |
| US3702783A (en) * | 1970-09-04 | 1972-11-14 | Robert C Hartlein | Epoxy silane coupling agents |
| US4048356A (en) * | 1975-12-15 | 1977-09-13 | International Business Machines Corporation | Hermetic topsealant coating and process for its formation |
| US4173683A (en) * | 1977-06-13 | 1979-11-06 | Rca Corporation | Chemically treating the overcoat of a semiconductor device |
| US4209356A (en) * | 1978-10-18 | 1980-06-24 | General Electric Company | Selective etching of polymeric materials embodying silicones via reactor plasmas |
| US4349609A (en) * | 1979-06-21 | 1982-09-14 | Fujitsu Limited | Electronic device having multilayer wiring structure |
| US4222792A (en) * | 1979-09-10 | 1980-09-16 | International Business Machines Corporation | Planar deep oxide isolation process utilizing resin glass and E-beam exposure |
| JPS57131250A (en) * | 1981-02-09 | 1982-08-14 | Fujitsu Ltd | Silicone resin composition |
| EP0076656B1 (de) * | 1981-10-03 | 1988-06-01 | Japan Synthetic Rubber Co., Ltd. | In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden |
| CA1204527A (en) * | 1982-08-13 | 1986-05-13 | Theodore F. Retajczyk, Jr. | Polymeric films for electronic circuits |
| US4464460A (en) * | 1983-06-28 | 1984-08-07 | International Business Machines Corporation | Process for making an imaged oxygen-reactive ion etch barrier |
| US4430153A (en) * | 1983-06-30 | 1984-02-07 | International Business Machines Corporation | Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide |
| JPS61198634A (ja) * | 1985-02-27 | 1986-09-03 | Asahi Chem Ind Co Ltd | 半導体装置の製造方法 |
-
1985
- 1985-10-31 US US06/793,390 patent/US4723978A/en not_active Expired - Fee Related
-
1986
- 1986-09-19 JP JP61219902A patent/JPH0730185B2/ja not_active Expired - Lifetime
- 1986-10-07 DE DE8686113868T patent/DE3683461D1/de not_active Expired - Fee Related
- 1986-10-07 EP EP86113868A patent/EP0223987B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0223987A2 (de) | 1987-06-03 |
| JPS62106632A (ja) | 1987-05-18 |
| US4723978A (en) | 1988-02-09 |
| EP0223987B1 (de) | 1992-01-15 |
| EP0223987A3 (en) | 1989-11-08 |
| JPH0730185B2 (ja) | 1995-04-05 |
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| Publication | Publication Date | Title |
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