DE3641524A1 - Verfahren zur herstellung eines halbleiterbauelements - Google Patents

Verfahren zur herstellung eines halbleiterbauelements

Info

Publication number
DE3641524A1
DE3641524A1 DE19863641524 DE3641524A DE3641524A1 DE 3641524 A1 DE3641524 A1 DE 3641524A1 DE 19863641524 DE19863641524 DE 19863641524 DE 3641524 A DE3641524 A DE 3641524A DE 3641524 A1 DE3641524 A1 DE 3641524A1
Authority
DE
Germany
Prior art keywords
electrode
bonding
thermal treatment
wire
metal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19863641524
Other languages
English (en)
Inventor
Kazumichi Machida
Jitsuiho Hirota
Masaaki Shimotomai
Seizo Omae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60278651A external-priority patent/JPS62136840A/ja
Priority claimed from JP60278652A external-priority patent/JPS62136841A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3641524A1 publication Critical patent/DE3641524A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48507—Material at the bonding interface comprising an intermetallic compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48747—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48839—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48847—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85948—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung eines Halbleiterbauelementes, wie eines ICs (integrierte Schaltung) und eines diskreten oder Einzelhalbleiter-Bauelements, welches über einen Metalldraht mit einer Leitung, beispielsweise einer Leiterbahn, verbunden werden soll.
In Fig. 1 ist ein Verfahren zum Bondieren, d.h. zum Herstellen einer Kontaktverbindung, eines Drahtes aus einem Halbleiterbauelement dargestellt. Diese Drahtbondierung oder Drahtkontaktierung soll eine auf einem Halbleiterchip 2 ausgebildete Aluminium­ elektrode 3 mittels eines Golddrahts 1 mit einer Leitung 4 aus einer Kupferlegierung verbinden, wobei diese Leitung einer Oberflächenbehandlung, wie bei­ spielsweise einer metallischen Überziehung mit Silber, unterzogen worden ist und ein haarröhrenförmiger Körper, d.h. ein Kapillarteil, das als Bondierungswerkzeug dient, benutzt wird.
Um eine solche Verbindung zu erzielen, wird ein Ende des Golddrahtes 1 durch eine Lichtbogenheizein­ wirkung zum Fließen bzw. Schmelzen gebracht, woraufhin man es zu einer Kugel 1 a festwerden oder erstarren läßt. Anschließend wird die Kugel 1 a durch Kugelthermokom­ pression an die Aluminiumelektrode angeheftet (Fig. 1a und 1b). Daraufhin wird der Draht 1 abgeleitet und durch eine Steppkontaktierung (Fig. 1c und 1d) mit der Leitung 4 verbunden. Häufig wird zum Bondieren des Drahtes 1 das Thermoschallverfahren angewendet.
Da das für den Draht benutzte Gold teuer ist und eine langfristige Zuverlässigkeit und Dauerhaftigkeit der Verbindung zwischen Golddraht und Aluminiumelek­ trode nicht ausreichend hoch sind, werden im folgenden verschiedene alternative Materialien und Bondierungs­ techniken näher untersucht.
Die langfristige Zuverlässigkeit und Betriebs­ sicherheit an der Verbindung zwischen dem Metalldraht und der Elektrode des Halbleiterchips wird durch Interdiffusionen beeinflußt und beeinträchtigt, die mit der Zeit an dieser Grenze zwischen dem Metalldraht und der Elektrode des Halbleiterchips auftreten, und es bildet sich eine intermetallische Zusammensetzung oder Verbindung 6, bzw. es wächst eine derartige inter­ metallische Verbindung an der Grenzfläche, wie sie in Fig. 2 angedeutet ist. Dieses führt jedoch zu einer Verschlechterung der Eigenschaften des Bauelementes und kann ein Abschälen oder Ablösen der Leitung ver­ ursachen. Aus diesem Grunde ist die langfristige Zu­ verlässigkeit nur gering.
Das Wachsen der intermetallischen Zusammensetzung ist erleichtert, wenn der Metalldraht aus Gold ist und die Elektrode des Halbleiterbauelementes aus Aluminium. Darüber hinaus tritt dieses Anwachsen der Verbindung oder des Kompounds leichter auf, wenn das Halbleiter­ bauelement in einer Hochtemperaturumgebung benutzt wird.
Um dieses Anwachsen der intermetallischen Zu­ sammensetzung zu verhindern, könnten die Bondierungs­ bedingungen so eingestellt werden, daß die Reaktion während der Bondierung nur oberflächlich und flach ist. Jedoch würde hierdurch die Bondierungshaftfestigkeit vermindert und es könnte eine Ablösung des Drahtes die Folge sein.
Darüber hinaus unterscheidet sich beim konven­ tionellen Verfahren der Zustand der Bondierungskontak­ tierung von einem Punkt zum anderen. Hierdurch wird ebenfalls die langfristige Stabilität und Dauerhaftig­ keit vermindert.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, die langfristige Zuverlässigkeit eines Halbleiterbauelementes zu verbessern, und zwar ins­ besondere, wenn das Halbleiterbauelement in einer Hochtemperaturumgebung benutzt wird.
Ferner soll durch die Erfindung ein Ablösen des Drahtes verhindert werden.
Durch die Erfindung wird ein Verfahren zur Her­ stellung eines Halbleiterbauelementes, welches einen Halbleiterchip aufweist, dessen Elektrode mittels eines Metalldrahtes mit einer Leitung verbunden ist, angege­ ben, welches Verfahren als Verfahrensschritte aufweist: Versehen des Halbleiterchips mit einer Elektrode in einem vorbereitenden Schritt, Bondieren eines Metall­ drahtes an diese Elektrode und Anwenden einer solchen Thermobehandlung, daß eine Verschlechterung und Beein­ trächtigung des bondierten Bereichs zwischen der Elek­ trode und dem Metalldraht verhindert ist.
Im folgenden wird die Erfindung an Hand der Zeichnungen näher erläutert. Dabei zeigen:
Fig. 1 in schematischer Weise die Ausführung der Drahtbondierung bzw. -kontaktierung,
Fig. 2 die Deformation einer Elektrodenschicht,
Fig. 3 eine schematische Darstellung eines Teils eines Halbleiterbauelementes, welches durch ein Verfahren gemäß einem Ausführungsbeispiel der vorlie­ genden Erfindung hergestellt worden ist,
Fig. 4 ein Diagramm, das den Bereich von zu­ friedenstellende Ergebnisse liefernden Bedingungen darstellt,
Fig. 5 ein Diagramm, das die Beziehung zwischen der Temperatur der Thermo- oder Wärmebehandlung und der resultierenden Bondierungsfestigkeit zeigt, und
Fig. 6 eine schematische Darstellung, die eine in einem zweiten erfindungsgemäßen Ausführungsbeispiel ausgebildete Schutzschicht zeigt.
Durch ein Ausführungsbeispiel des erfindungsge­ mäßen Verfahrens soll eine Halbleitervorrichtung oder ein Halbleiterbauelement hergestellt werden, wie es in Fig. 3 gezeigt ist, wobei dieses Halbleiterbauelement einen Halbleiterchip 2 mit einer Elektrode, beispiels­ weise einer auf der Oberfläche des Halbleiterchips 2 ausgebildeten Aluminiumelektrode 3 aufweist. Die Elek­ trode 3 ist mittels eines Metalldrahtes, wie bei­ spielsweise eines Kupferdrahtes 10 mit einer Leitung 4 verbunden. Eine Legierungs- (intermetallische Ver­ bindungs- oder Kompound-) Schicht 6 ist am bondierten Bereich zwischen dem kugelförmigen Bereich 10 a des Kupferdrahtes 10 und der Aluminiumelektrode 3 ausge­ bildet.
Das dargestellte Halbleiterbauelement wird in der folgenden Weise hergestellt. Zunächst wird in einem vorbereitenden Schritt der Halbleiterchip 2 mit einer Aluminiumelektrode 3 versehen.
Daraufhin wird der Draht 10 durch Kugelthermokom­ pression an die Elektrode 3 angeheftet. Für diese Kugel-Bondierung wird die Spitze des Drahtes erhitzt, so daß sich eine geschmolzene Kugel an der Spitze des Drahtes bildet. Die notwendige Erwärmung kann bei­ spielsweise durch Anlegen einer Hochspannung über die Drahtspitze und eine Entladeelektrode der Kapillare, die nicht als solche dargestellt ist, erzielt werden, wobei hierdurch eine Bogenentladung über die Drahtspitze und die Entladeelektrode verursacht wird. Die Kugel wird dabei, je mehr von diesem Draht zum Fließen ge­ bracht wird, immer größere Ausmaße annehmen. Dann wird die Kugel an die Elektrode gepreßt, wodurch eine Bon­ dierung erzielt wird. Dieses Verfahren ist ähnlich dem bereits an Hand von Fig. 1 beschriebenen Verfahren.
Die verschiedenen Bedingungen während des Bondier­ vorganges, einschließlich der Temperaturbedingungen und der Parameter (Amplitude, Frequenz) der Ultra­ schallschwingung können so eingestellt werden, daß eine wunschgemäße Bondierungskontaktierung erzielt wird. Entsprechend diesem Ausführungsbeispiel werden die Bedingungen so festgelegt, daß die Beschaffenheit des Bondierungskontaktes gerade so ist, daß seine Tiefe gerade dazu ausreicht, ein Ablösen bei einer geringen Kraft zu verhindern, und ferner ein abnormes Anwachsen der intermetallischen Verbindung an der Bondierungs­ zwischenschicht nicht zu verursachen. Eine solche Tiefe ist geringer als die Tiefe, die gemeinhin als notwendig erachtet werden würde, da ohne weitere Lösungsmaßnahmen eine solche Tiefe nicht ausreichen würde, um eine nor­ malerweise geforderte Bondierungskontaktfestigkeit zu liefern.
Nach der Bondierung wird eine Thermobehandlung angewandt. Die Thermo- oder Wärmebehandlung kann dem Zweck der Verbesserung der langfristigen Zuverlässig­ keit des bondierten Bereichs dienen. Die Bedingungen für die Wärmebehandlung sind in Fig. 4 dargestellt, in welcher ein zufriedenstellender Bereich in Ab­ hängigkeit von der Temperatur (°C) und der Erwärmungs­ zeit (Sekunden) definiert ist. Mit der zufriedenstel­ lenden Wärmebehandlung wird die Bondierungskontakt­ festigkeit des bondierten Bereichs verbessert, und die Beschaffenheit und der Zustand der Bondierung bzw. Verbindung werden gleichmäßig und einheitlich. Infolgedessen ist die langzeitmäßige Zuverlässigkeit und Betriebssicherheit insbesondere für die Benutzung in einer Hochtemperaturumgebung verbessert. Befindet sich die Temperatur über einem Wert von 360°C, so wirkt sich ein nachteiliger Effekt auf die Bauelement­ eigenschaften und -kenndaten aus. Die minimale Tempe­ ratur, unterhalb derer eine ausreichende Kontaktfestig­ keit nicht mehr erzielt werden kann, ist eine Funktion der Erwärmungszeit. Beispielsweise beträgt die minimale Temperatur bei einer Erwärmungszeit von 60 s ungefähr 230°C. Beträgt die Erwärmungszeit 10 s, so liegt die minimale Temperatur bei ungefähr 320°C.
Die Beziehung zwischen der Temperatur und der resultierenden Bondierungskontaktfestigkeit ist in Fig. 5 dargestellt, wobei eine auf 30 s festgesetzte Erwärmungszeit zugrundegelegt wurde. Die sich in Richtung der Achse der Kontaktfestigkeit erstreckenden Balken geben die Verteilungen der resultierenden Kon­ takt- oder Kontakthaftfestigkeiten an, die den angege­ benen Temperaturen entsprechen. Die gestrichelte Linie bei 0,392 N (40 gf = 40 gram-force) zeigt die erfor­ derliche minimale Kontaktfestigkeit an.
Entsprechend dem obigen Ausführungsbeispiel wird die Diffusionsschicht stabilisiert und das abnorme Anwachsen der intermetallischen Verbindung verhindert. Dies ist der Fall wegen des relativ flachen, wenig tiefgehenden Bondierungskontakts nach dem Bondierungsvorgang. Mit der darauffolgen­ den Thermobehandlung wird die Bondierungskontakt­ festigkeit verbessert, so daß sowohl Haftfestigkeit als auch die Widerstandsfähigkeit des Kontakts gut sind.
In einem zweiten Ausführungsbeispiel der Er­ findung dient diese Thermobehandlung nach dem Bondierungsschritt zudem dem Zweck der Ausbildung einer Schutzschicht auf der Oberfläche des bondier­ ten Bereichs. Beispielsweise wird nach der Bondierung eine Thermobehandlung in Luft bei einer Temperatur von ungefähr 300°C und für ungefähr 30 min angewandt, um eine Oxidschicht 7, wie sie in Fig. 6 gezeigt ist, auf der Oberfläche des bondierten Bereichs und auch der Oberfläche der Kugel 10 a und der Elektrode 3 aus­ zubilden, die sich jedoch insbesondere in der Zone des bondierten Bereichs erstrecken soll. Diese Oxid­ schicht 7 dient als eine Schutzschicht, um während der Benutzung des Bauelementes das Eintreten von Gasen in die Bondierungsschicht und somit das Anwachsen der intermetallischen Verbindung an dieser Bondierungs­ zwischenschicht zu verhindern. Durch diese Thermobe­ handlung wird der Bondierungskontakt stabilisiert und ein Ablösen des Drahtes wird verhindert. Damit sind Beeinträchtigungen und Verschlechterungen der Halb­ leiterbauelementkenndaten und -eigenschaften vermieden.
Anstelle der Oxidschicht kann auch eine Nitrid­ schicht als Schutzschicht ausgebildet werden. Dies kann erzielt werden, indem man die Thermobehandlung in einer Stickstoffatmosphäre durchführt.
Die Benutzung eines Kupferdrahtes ist deshalb von Vorteil, weil die Wachstumsrate des Kompounds am bondierten Bereich gering ist.
Anstelle des Kupferdrahtes können jedoch wahl­ weise auch andere Materialien wie beispielsweise Paladium, Aluminium, Silber oder deren Legierungen mit Zusatzstoffen und eine Kupferlegierung mit Zusatzstoffen verwendet werden.

Claims (11)

1. Verfahren zur Herstellung eines Halbleiterbauele­ ments, welches einen Halbleiterchip aufweist, dessen Elektrode mittels eines Metalldrahtes mit einer Leitung verbunden ist, welches Verfahren durch die folgenden Verfahrensschritte gekennzeichnet ist:
Versehen des Halbleiterchips mit einer Elektrode in einem vorbereitenden Schritt,
Bondieren eines Metalldrahtes an diese Elektrode, und
Anwendung einer solchen Thermobehandlung, daß eine Verschlechterung und Beeinträchtigung des bondierten Bereichs zwischen der Elektrode und dem Metalldraht verhindert sind.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das Bondieren durch eine Kugelthermokompressions­ anheftung erzielt wird.
3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Verfahrensschritt des Bondierens ein Erwärmen der Spitze des Drahtes zur Erzeugung einer geschmolze­ nen Kugel an der Drahtspitze und ein Anpressen dieser Kugel an die Elektrode umfaßt.
4. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das Bondieren so ausgeführt wird, daß eine Reaktion an diesem bondierten Bereich derart flach hervorgerufen wird, daß ein abnormes Anwachsen intermetallischer Ver­ bindungen an der Bondierungszwischenschicht nicht auf­ tritt.
5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß die Thermobehandlung unter Bedingungen durch­ geführt sind, die so geartet sind, daß sie die Bondierungshaftfestigkeit verbessern.
6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß die Thermobehandlung bei einer Temperatur durch­ geführt wird, die nicht höher als eine Temperatur ist, oberhalb derer die kennzeichnenden Eigenschaften des Halbleiterbauelementes nachteilig beeinflußt werden.
7. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß die Thermobehandlung bei einer nicht über unge­ fähr 360°C liegenden Temperatur durchgeführt wird.
8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß die Thermobehandlung bei einer Temperatur, die nicht unter ungefähr 230°C liegt, und für eine Zeit­ dauer von ungefähr 5 bis 60 s durchgeführt wird.
9. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Thermobehandlung in einer eine Schutzschicht hervorrufenden Atmosphäre ausgeführt wird, um eine Schutzschicht auf der Oberfläche des bondierten Bereichs zwischen der Elektrode und dem Metalldraht auszubilden.
10. Verfahren nach Anspruch 9, dadurch gekennzeichnet, daß die Schutzschicht eine Oxidschicht oder eine Nitridschicht ist.
11. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Thermobehandlung in Luft bei einer Temperatur von ungefähr 300°C für ungefähr 30 min durchgeführt wird.
DE19863641524 1985-12-10 1986-12-05 Verfahren zur herstellung eines halbleiterbauelements Ceased DE3641524A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60278651A JPS62136840A (ja) 1985-12-10 1985-12-10 半導体装置
JP60278652A JPS62136841A (ja) 1985-12-10 1985-12-10 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE3641524A1 true DE3641524A1 (de) 1987-06-11

Family

ID=26552974

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863641524 Ceased DE3641524A1 (de) 1985-12-10 1986-12-05 Verfahren zur herstellung eines halbleiterbauelements

Country Status (1)

Country Link
DE (1) DE3641524A1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0365919A2 (de) * 1988-10-28 1990-05-02 International Business Machines Corporation Verfahren, um goldene oder goldlegierte Drähte mit einer Lötstelle zu verbinden
DE3938152A1 (de) * 1989-01-13 1990-07-26 Mitsubishi Electric Corp Verfahren zur herstellung eines halbleiterbauelements
DE4021031A1 (de) * 1990-01-10 1991-07-11 Mitsubishi Electric Corp Halbleiterbauelement und verfahren zu seiner herstellung
EP1187200A2 (de) * 2000-09-01 2002-03-13 Nec Corporation Halbleiteranordnung mit einer verbesserten Bondflächenstruktur
EP2339622A1 (de) * 2009-12-23 2011-06-29 Nxp B.V. Drahtbindungsprozess

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT239854B (de) * 1961-12-04 1965-04-26 Philips Nv Verfahren zum Verbinden eines Metalleiters mit einem Halbleiterkörper

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT239854B (de) * 1961-12-04 1965-04-26 Philips Nv Verfahren zum Verbinden eines Metalleiters mit einem Halbleiterkörper

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Ruge, Ingolf: Halbleiter-Technologie, 2. Aufl., Berlin, Heidelberg, New York, Tokio, Springer-Verlag, 1984, S. 323-327 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0365919A2 (de) * 1988-10-28 1990-05-02 International Business Machines Corporation Verfahren, um goldene oder goldlegierte Drähte mit einer Lötstelle zu verbinden
EP0365919A3 (de) * 1988-10-28 1991-07-24 International Business Machines Corporation Verfahren, um goldene oder goldlegierte Drähte mit einer Lötstelle zu verbinden
DE3938152A1 (de) * 1989-01-13 1990-07-26 Mitsubishi Electric Corp Verfahren zur herstellung eines halbleiterbauelements
DE4021031A1 (de) * 1990-01-10 1991-07-11 Mitsubishi Electric Corp Halbleiterbauelement und verfahren zu seiner herstellung
EP1187200A2 (de) * 2000-09-01 2002-03-13 Nec Corporation Halbleiteranordnung mit einer verbesserten Bondflächenstruktur
EP1187200A3 (de) * 2000-09-01 2004-03-31 NEC Compound Semiconductor Devices, Ltd. Halbleiteranordnung mit einer verbesserten Bondflächenstruktur
EP2339622A1 (de) * 2009-12-23 2011-06-29 Nxp B.V. Drahtbindungsprozess

Similar Documents

Publication Publication Date Title
DE2914314C2 (de) Verfahren zur Herstellung einer Preßverbindung zwischen wenigsten zwei Metallteilen
DE2930779C2 (de) Halbleitervorrichtung
DE2314731C3 (de) Halbleiteranordnung mit höckerartigen Vorsprüngen auf Kontaktflecken und Verfahren zur Herstellung einer solchen Halbleiteranordnung
DE19735904A1 (de) Verfahren zum Bestücken eines Leiterrahmens
DE2228703A1 (de) Verfahren zum herstellen einer vorgegebenen lotschichtstaerke bei der fertigung von halbleiterbauelementen
DE10243961A1 (de) Metallfüllverfahren und Gegenstand aufweisend metallgefüllte Löcher
DE2623778C3 (de) Vorrichtung zum Löten eines schwer lötbaren Metalls
DE4313980B4 (de) Integrierte Hybridschaltung und Verfahren zu deren Herstellung
EP0218069A1 (de) Verfahren zum Verschweissen mittels Laserlicht
DE3938152C2 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE2529014A1 (de) Vorrichtung zum verbinden elektrischer leiter mittels waerme und druck, insbesondere schweisskopf
DE19717368A1 (de) Drahtbondverfahren, Drahtbondvorrichtung und mit denselben hergestellte Halbleitereinrichtung
DE10053173B4 (de) Herstellungsverfahren für eine Zündkerze mit einem Edelmetallstück für einen Verbrennungsmotor
DE4112416C2 (de)
DE3641524A1 (de) Verfahren zur herstellung eines halbleiterbauelements
DE2518305A1 (de) Verfahren zum anbringen eines leiterteils an einer halbleitereinrichtung und eine nach diesem verfahren hergestellte halbleitereinrichtung
DE69218004T2 (de) Flussmittelloses lötverfahren
DE10111710B4 (de) Befestigungsverfahren für elektrische Bauteile
DE2747087C2 (de) Elektrischer Kontakt und Verfahren zu dessen Herstellung
DE3110080A1 (de) Verfahren zum verbinden eines halbleiterkoerpers mit einem metallischen systemtraeger und danach hergestellte halbleiteranordnung
DE2238569A1 (de) Verfahren zum loeten einer halbleiterplatte
EP0523547A2 (de) Chemisch vernickeltes DCB-Substrat und Verfahren, um es mit dünnen Drähten zu verbinden
DE10252577A1 (de) Verfahren zum Erzeugen einer Lotverbindung durch kapillaren Lotfluß
DE3406542A1 (de) Verfahren zum herstellen eines halbleiterbauelementes
DE2748239A1 (de) Verfahren zum kontaktieren eines elektrischen kaltleiter-widerstandes mit einem anschlusselement

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection