DE3584694D1 - Dynamischer direktzugriffspeicher. - Google Patents
Dynamischer direktzugriffspeicher.Info
- Publication number
- DE3584694D1 DE3584694D1 DE8585106731T DE3584694T DE3584694D1 DE 3584694 D1 DE3584694 D1 DE 3584694D1 DE 8585106731 T DE8585106731 T DE 8585106731T DE 3584694 T DE3584694 T DE 3584694T DE 3584694 D1 DE3584694 D1 DE 3584694D1
- Authority
- DE
- Germany
- Prior art keywords
- access memory
- direct access
- dynamic direct
- dynamic
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111894A JPS615495A (ja) | 1984-05-31 | 1984-05-31 | 半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3584694D1 true DE3584694D1 (de) | 1992-01-02 |
Family
ID=14572801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8585106731T Expired - Lifetime DE3584694D1 (de) | 1984-05-31 | 1985-05-31 | Dynamischer direktzugriffspeicher. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4677592A (de) |
| EP (1) | EP0166974B1 (de) |
| JP (1) | JPS615495A (de) |
| KR (1) | KR850008023A (de) |
| DE (1) | DE3584694D1 (de) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6199199A (ja) * | 1984-09-28 | 1986-05-17 | 株式会社東芝 | 音声分析合成装置 |
| JPH0736269B2 (ja) * | 1985-08-30 | 1995-04-19 | 株式会社日立製作所 | 半導体記憶装置 |
| JPS62188096A (ja) * | 1986-02-13 | 1987-08-17 | Toshiba Corp | 半導体記憶装置のリフレツシユ動作タイミング制御回路 |
| JPS62188095A (ja) * | 1986-02-14 | 1987-08-17 | Toshiba Corp | 半導体記憶装置の制御回路 |
| JPS62231495A (ja) * | 1986-03-31 | 1987-10-12 | Toshiba Corp | 半導体記憶装置 |
| JPS6356732A (ja) * | 1986-08-27 | 1988-03-11 | Nec Corp | マイクロコンピユ−タシステム |
| US4870620A (en) * | 1987-01-06 | 1989-09-26 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory device with internal refresh |
| US4910574A (en) * | 1987-04-30 | 1990-03-20 | Ibm Corporation | Porous circuit macro for semiconductor integrated circuits |
| JPH01124195A (ja) * | 1987-11-09 | 1989-05-17 | Sharp Corp | セルフリフレッシュ方式 |
| JPH07107793B2 (ja) * | 1987-11-10 | 1995-11-15 | 株式会社東芝 | 仮想型スタティック半導体記憶装置及びこの記憶装置を用いたシステム |
| US5007022A (en) * | 1987-12-21 | 1991-04-09 | Texas Instruments Incorporated | Two-port two-transistor DRAM |
| KR100213602B1 (ko) * | 1988-05-13 | 1999-08-02 | 가나이 쓰도무 | 다이나믹형 반도체 기억장치 |
| JPH0221490A (ja) * | 1988-07-07 | 1990-01-24 | Oki Electric Ind Co Ltd | ダイナミック・ランダム・アクセス・メモリ |
| US4989180A (en) * | 1989-03-10 | 1991-01-29 | Board Of Regents, The University Of Texas System | Dynamic memory with logic-in-refresh |
| US5758148A (en) * | 1989-03-10 | 1998-05-26 | Board Of Regents, The University Of Texas System | System and method for searching a data base using a content-searchable memory |
| US5777608A (en) * | 1989-03-10 | 1998-07-07 | Board Of Regents, The University Of Texas System | Apparatus and method for in-parallel scan-line graphics rendering using content-searchable memories |
| US5185539A (en) * | 1990-08-31 | 1993-02-09 | Motorola, Inc. | Programmable logic device address buffer/multiplexer/driver |
| JP3155545B2 (ja) * | 1990-09-07 | 2001-04-09 | シャープ株式会社 | メモリのリフレッシュ制御回路 |
| US5247479A (en) * | 1991-05-23 | 1993-09-21 | Intel Corporation | Current sensing amplifier for SRAM |
| JP3244340B2 (ja) * | 1993-05-24 | 2002-01-07 | 三菱電機株式会社 | 同期型半導体記憶装置 |
| JPH09161478A (ja) * | 1995-12-12 | 1997-06-20 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR0180781B1 (ko) * | 1995-12-29 | 1999-04-15 | 김주용 | 비트라인 센스 앰프 구동 회로 |
| US6148034A (en) * | 1996-12-05 | 2000-11-14 | Linden Technology Limited | Apparatus and method for determining video encoding motion compensation vectors |
| TW535161B (en) | 1999-12-03 | 2003-06-01 | Nec Electronics Corp | Semiconductor memory device and its testing method |
| JP3376998B2 (ja) * | 2000-03-08 | 2003-02-17 | 日本電気株式会社 | 半導体記憶装置 |
| JP3957469B2 (ja) | 2000-04-11 | 2007-08-15 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置 |
| JP3540243B2 (ja) * | 2000-04-24 | 2004-07-07 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置 |
| JP2002298574A (ja) * | 2001-03-29 | 2002-10-11 | Internatl Business Mach Corp <Ibm> | Ｄｒａｍ及びｄｒａｍのリフレッシュ方法 |
| US6501675B2 (en) * | 2001-05-14 | 2002-12-31 | International Business Machines Corporation | Alternating reference wordline scheme for fast DRAM |
| US6504766B1 (en) | 2001-06-29 | 2003-01-07 | International Business Machines Corporation | System and method for early write to memory by injecting small voltage signal |
| US6400629B1 (en) | 2001-06-29 | 2002-06-04 | International Business Machines Corporation | System and method for early write to memory by holding bitline at fixed potential |
| JP4262912B2 (ja) | 2001-10-16 | 2009-05-13 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置 |
| US6473349B1 (en) | 2001-11-29 | 2002-10-29 | Motorola, Inc. | Cascode sense AMP and column select circuit and method of operation |
| JP4249412B2 (ja) | 2001-12-27 | 2009-04-02 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置 |
| US10424358B2 (en) | 2017-06-12 | 2019-09-24 | Sandisk Technologies Llc | Bias control circuit with distributed architecture for memory cells |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2543515A1 (de) * | 1975-09-30 | 1977-04-07 | Licentia Gmbh | Verfahren zum regenerieren der speicherinhalte von speicherzellen in mos-speichern und mos-speicher zur durchfuehrung des verfahrens |
| US4079462A (en) * | 1976-05-07 | 1978-03-14 | Intel Corporation | Refreshing apparatus for MOS dynamic RAMs |
| US4333167A (en) * | 1979-10-05 | 1982-06-01 | Texas Instruments Incorporated | Dynamic memory with on-chip refresh invisible to CPU |
| US4330852A (en) * | 1979-11-23 | 1982-05-18 | Texas Instruments Incorporated | Semiconductor read/write memory array having serial access |
| JPS5677986A (en) * | 1979-11-29 | 1981-06-26 | Canon Inc | Dynamic memory refresh system |
| JPS58155596A (ja) * | 1982-03-10 | 1983-09-16 | Hitachi Ltd | ダイナミツク型ｍｏｓｒａｍ |
| JPS60113393A (ja) * | 1983-11-24 | 1985-06-19 | Hitachi Ltd | リフレッシュ制御回路 |
-
1984
- 1984-05-31 JP JP59111894A patent/JPS615495A/ja active Granted
-
1985
- 1985-05-23 KR KR1019850003561A patent/KR850008023A/ko not_active Application Discontinuation
- 1985-05-30 US US06/739,171 patent/US4677592A/en not_active Expired - Lifetime
- 1985-05-31 EP EP85106731A patent/EP0166974B1/de not_active Expired - Lifetime
- 1985-05-31 DE DE8585106731T patent/DE3584694D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH041954B2 (de) | 1992-01-14 |
| KR850008023A (ko) | 1985-12-11 |
| EP0166974B1 (de) | 1991-11-21 |
| US4677592A (en) | 1987-06-30 |
| EP0166974A3 (en) | 1989-04-26 |
| JPS615495A (ja) | 1986-01-11 |
| EP0166974A2 (de) | 1986-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3584694D1 (de) | Dynamischer direktzugriffspeicher. | |
| DE3876415D1 (de) | Dynamischer direktzugriffsspeicher. | |
| DE3587843D1 (de) | Speicherzugriffsteuerungsanordnung. | |
| DE3782756D1 (de) | Direktzugriffspeichereinrichtung. | |
| DE3585711D1 (de) | Halbleiterspeicheranordnung. | |
| DE3582141D1 (de) | Speicheranordnung. | |
| DE3882278D1 (de) | Mos-speicher. | |
| DE3771288D1 (de) | Dynamischer speicher mit wahlfreiem zugriff. | |
| DE3583091D1 (de) | Halbleiterspeicheranordnung. | |
| DE3577944D1 (de) | Halbleiterspeicheranordnung. | |
| DE3582376D1 (de) | Halbleiterspeicheranordnung. | |
| DE3853714D1 (de) | Dynamische Direktzugriffsspeicher mit anteilig genutzten Abfühlverstärkern. | |
| DE3586377D1 (de) | Halbleiterspeicheranordnung. | |
| DE3576236D1 (de) | Halbleiterspeicheranordnung. | |
| DE3577367D1 (de) | Halbleiterspeicheranordnung. | |
| DE3585811D1 (de) | Direktzugriffsspeicher. | |
| DE3575225D1 (de) | Halbleiterspeicheranordnung. | |
| DE3586556D1 (de) | Halbleiterspeicheranordnung. | |
| DE3580993D1 (de) | Halbleiterspeicheranordnung. | |
| DE3576754D1 (de) | Halbleiterspeicheranordnung. | |
| DE3586064D1 (de) | Dynamischer lese-schreib-direktzugriffsspeicher. | |
| DE3783100D1 (de) | Festwertspeicheranordnung. | |
| DE3582960D1 (de) | Halbleiterspeicheranordnung. | |
| DE3578254D1 (de) | Halbleiterspeicheranordnung. | |
| DE3586675D1 (de) | Halbleiterspeicheranordnung. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |