DE3579664D1 - Roentgenstrahlbelichtungsgeraet. - Google Patents
Roentgenstrahlbelichtungsgeraet.Info
- Publication number
- DE3579664D1 DE3579664D1 DE8585113171T DE3579664T DE3579664D1 DE 3579664 D1 DE3579664 D1 DE 3579664D1 DE 8585113171 T DE8585113171 T DE 8585113171T DE 3579664 T DE3579664 T DE 3579664T DE 3579664 D1 DE3579664 D1 DE 3579664D1
- Authority
- DE
- Germany
- Prior art keywords
- exposure device
- ray exposure
- ray
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mathematical Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59218383A JPS6197918A (ja) | 1984-10-19 | 1984-10-19 | X線露光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3579664D1 true DE3579664D1 (de) | 1990-10-18 |
Family
ID=16719037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585113171T Expired - Lifetime DE3579664D1 (de) | 1984-10-19 | 1985-10-17 | Roentgenstrahlbelichtungsgeraet. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4825453A (de) |
EP (1) | EP0178660B1 (de) |
JP (1) | JPS6197918A (de) |
KR (1) | KR900000437B1 (de) |
DE (1) | DE3579664D1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4648106A (en) * | 1984-11-21 | 1987-03-03 | Micronix Corporation | Gas control for X-ray lithographic system |
JPS62291028A (ja) * | 1986-06-10 | 1987-12-17 | Nec Corp | X線露光装置 |
DE68929356T2 (de) * | 1988-06-03 | 2002-05-23 | Canon K.K., Tokio/Tokyo | Verfahren und Vorrichtung zur Belichtung |
EP0358521B1 (de) * | 1988-09-09 | 1995-06-07 | Canon Kabushiki Kaisha | Belichtungsvorrichtung |
JPH0276212A (ja) * | 1988-09-13 | 1990-03-15 | Canon Inc | 多重露光方法 |
US5267292A (en) * | 1988-10-05 | 1993-11-30 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
JP2623127B2 (ja) * | 1988-10-05 | 1997-06-25 | キヤノン株式会社 | X線露光装置 |
JP2770960B2 (ja) * | 1988-10-06 | 1998-07-02 | キヤノン株式会社 | Sor−x線露光装置 |
JPH02156625A (ja) * | 1988-12-09 | 1990-06-15 | Canon Inc | 直動案内装置 |
EP0422814B1 (de) * | 1989-10-02 | 1999-03-17 | Canon Kabushiki Kaisha | Belichtungsvorrichtung |
JP2860578B2 (ja) * | 1990-03-02 | 1999-02-24 | キヤノン株式会社 | 露光装置 |
JP3184582B2 (ja) * | 1991-11-01 | 2001-07-09 | キヤノン株式会社 | X線露光装置およびx線露光方法 |
US5572562A (en) * | 1993-04-30 | 1996-11-05 | Lsi Logic Corporation | Image mask substrate for X-ray semiconductor lithography |
US5512395A (en) * | 1993-04-30 | 1996-04-30 | Lsi Logic Corporation | Image masks for semiconductor lithography |
KR20010006467A (ko) * | 1997-04-18 | 2001-01-26 | 오노 시게오 | 노광 장치, 해당 장치를 이용한 노광 방법 및 회로 장치 제조 방법 |
US6707529B1 (en) * | 1999-02-12 | 2004-03-16 | Nikon Corporation | Exposure method and apparatus |
US6364386B1 (en) * | 1999-10-27 | 2002-04-02 | Agilent Technologies, Inc. | Apparatus and method for handling an integrated circuit |
US7508487B2 (en) * | 2000-06-01 | 2009-03-24 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
TWI226972B (en) * | 2000-06-01 | 2005-01-21 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US6576912B2 (en) * | 2001-01-03 | 2003-06-10 | Hugo M. Visser | Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window |
JP2002299221A (ja) * | 2001-04-02 | 2002-10-11 | Canon Inc | X線露光装置 |
CN101825847B (zh) * | 2003-04-11 | 2013-10-16 | 株式会社尼康 | 用于沉浸式光刻光学***的清洗方法 |
TWI616932B (zh) * | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
EP3203498A1 (de) | 2004-06-09 | 2017-08-09 | Nikon Corporation | Belichtungsvorrichtung und vorrichtungsherstellungsverfahren |
US8698998B2 (en) * | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
EP1783822A4 (de) * | 2004-06-21 | 2009-07-15 | Nikon Corp | Belichtungseinrichtung, belichtungseinrichtungs-elementreinigungsverfahren, belichtungseinrichtungs-wartungsverfahren, wartungseinrichtung und einrichtungsherstellungsverfahren |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2307754A (en) * | 1940-08-03 | 1943-01-12 | Allis Chalmers Mfg Co | Hydrogen-filled apparatus |
US2804102A (en) * | 1954-08-09 | 1957-08-27 | Ralph D Cooksley | Automatic pressure container vacuumizing, filling and charging machine |
US4119855A (en) * | 1977-07-08 | 1978-10-10 | Massachusetts Institute Of Technology | Non vacuum soft x-ray lithographic source |
FR2475728A1 (fr) * | 1980-02-11 | 1981-08-14 | Cit Alcatel | Detecteur de fuites a helium |
JPS57169242A (en) * | 1981-04-13 | 1982-10-18 | Hitachi Ltd | X-ray transferring device |
US4349418A (en) * | 1981-07-28 | 1982-09-14 | Allied Corporation | Production of methylnaphthalenes and tar bases including indole |
JPS5873116A (ja) * | 1981-10-28 | 1983-05-02 | Hitachi Ltd | X線露光装置 |
JPS58191433A (ja) * | 1982-05-04 | 1983-11-08 | Fujitsu Ltd | X線転写方法および装置 |
JPS59101833A (ja) * | 1982-12-03 | 1984-06-12 | Hitachi Ltd | X線露光装置 |
JPS6170721A (ja) * | 1984-09-14 | 1986-04-11 | Toshiba Corp | X線露光装置 |
US4648106A (en) * | 1984-11-21 | 1987-03-03 | Micronix Corporation | Gas control for X-ray lithographic system |
-
1984
- 1984-10-19 JP JP59218383A patent/JPS6197918A/ja active Granted
-
1985
- 1985-10-16 KR KR1019850007603A patent/KR900000437B1/ko not_active IP Right Cessation
- 1985-10-17 US US06/788,861 patent/US4825453A/en not_active Expired - Fee Related
- 1985-10-17 DE DE8585113171T patent/DE3579664D1/de not_active Expired - Lifetime
- 1985-10-17 EP EP85113171A patent/EP0178660B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0178660B1 (de) | 1990-09-12 |
JPH0564453B2 (de) | 1993-09-14 |
US4825453A (en) | 1989-04-25 |
KR860003649A (ko) | 1986-05-28 |
EP0178660A3 (en) | 1988-04-20 |
KR900000437B1 (ko) | 1990-01-30 |
EP0178660A2 (de) | 1986-04-23 |
JPS6197918A (ja) | 1986-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |