DE3575242D1 - Gaas-einkristall, verfahren zu seiner herstellung und den einkristall verwendendes halbleiterbauelement. - Google Patents

Gaas-einkristall, verfahren zu seiner herstellung und den einkristall verwendendes halbleiterbauelement.

Info

Publication number
DE3575242D1
DE3575242D1 DE8585112427T DE3575242T DE3575242D1 DE 3575242 D1 DE3575242 D1 DE 3575242D1 DE 8585112427 T DE8585112427 T DE 8585112427T DE 3575242 T DE3575242 T DE 3575242T DE 3575242 D1 DE3575242 D1 DE 3575242D1
Authority
DE
Germany
Prior art keywords
single crystal
production
semiconductor component
gaas
gaas single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585112427T
Other languages
English (en)
Inventor
Yoshihisa Fujisaki
Yukio Takano
Tsutomu Ishiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3575242D1 publication Critical patent/DE3575242D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8585112427T 1984-10-05 1985-10-01 Gaas-einkristall, verfahren zu seiner herstellung und den einkristall verwendendes halbleiterbauelement. Expired - Lifetime DE3575242D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59208262A JPH0628234B2 (ja) 1984-10-05 1984-10-05 ＧａＡｓ単結晶および半導体装置

Publications (1)

Publication Number Publication Date
DE3575242D1 true DE3575242D1 (de) 1990-02-08

Family

ID=16553324

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585112427T Expired - Lifetime DE3575242D1 (de) 1984-10-05 1985-10-01 Gaas-einkristall, verfahren zu seiner herstellung und den einkristall verwendendes halbleiterbauelement.

Country Status (5)

Country Link
US (1) US6297523B1 (de)
EP (1) EP0177022B1 (de)
JP (1) JPH0628234B2 (de)
KR (1) KR940006709B1 (de)
DE (1) DE3575242D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4816277B2 (ja) * 2006-06-14 2011-11-16 日立電線株式会社 窒化物半導体自立基板及び窒化物半導体発光素子
EP3604633B1 (de) * 2017-09-21 2024-02-21 Sumitomo Electric Industries, Ltd. Halbisolierendes galliumarsenidkristallsubstrat

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2908004A (en) * 1957-05-10 1959-10-06 Levinson John Temperature control for crystal pulling
NL238924A (de) * 1959-05-05
US3446603A (en) * 1965-07-12 1969-05-27 Bell Telephone Labor Inc Growth of lithium niobate crystals
GB1366532A (en) * 1971-04-21 1974-09-11 Nat Res Dev Apparatus for the preparation and growth of crystalline material
JPS55113669A (en) 1979-02-26 1980-09-02 Tokyo Shibaura Electric Co Manufacture of ceramic coating grain
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
JPS5929558B2 (ja) * 1979-10-22 1984-07-21 住友電気工業株式会社 半絶縁性砒化ガリウム結晶
US4544417A (en) * 1983-05-27 1985-10-01 Westinghouse Electric Corp. Transient capless annealing process for the activation of ion implanted compound semiconductors
JPS60122798A (ja) * 1983-12-01 1985-07-01 Sumitomo Electric Ind Ltd 砒化ガリウム単結晶とその製造方法

Also Published As

Publication number Publication date
EP0177022A2 (de) 1986-04-09
KR860003652A (ko) 1986-05-28
JPS6187376A (ja) 1986-05-02
EP0177022B1 (de) 1990-01-03
EP0177022A3 (en) 1987-01-07
KR940006709B1 (ko) 1994-07-25
US6297523B1 (en) 2001-10-02
JPH0628234B2 (ja) 1994-04-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee