DE3575242D1 - Gaas-einkristall, verfahren zu seiner herstellung und den einkristall verwendendes halbleiterbauelement. - Google Patents
Gaas-einkristall, verfahren zu seiner herstellung und den einkristall verwendendes halbleiterbauelement.Info
- Publication number
- DE3575242D1 DE3575242D1 DE8585112427T DE3575242T DE3575242D1 DE 3575242 D1 DE3575242 D1 DE 3575242D1 DE 8585112427 T DE8585112427 T DE 8585112427T DE 3575242 T DE3575242 T DE 3575242T DE 3575242 D1 DE3575242 D1 DE 3575242D1
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- production
- semiconductor component
- gaas
- gaas single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59208262A JPH0628234B2 (ja) | 1984-10-05 | 1984-10-05 | GaAs単結晶および半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3575242D1 true DE3575242D1 (de) | 1990-02-08 |
Family
ID=16553324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585112427T Expired - Lifetime DE3575242D1 (de) | 1984-10-05 | 1985-10-01 | Gaas-einkristall, verfahren zu seiner herstellung und den einkristall verwendendes halbleiterbauelement. |
Country Status (5)
Country | Link |
---|---|
US (1) | US6297523B1 (de) |
EP (1) | EP0177022B1 (de) |
JP (1) | JPH0628234B2 (de) |
KR (1) | KR940006709B1 (de) |
DE (1) | DE3575242D1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4816277B2 (ja) * | 2006-06-14 | 2011-11-16 | 日立電線株式会社 | 窒化物半導体自立基板及び窒化物半導体発光素子 |
EP3604633B1 (de) * | 2017-09-21 | 2024-02-21 | Sumitomo Electric Industries, Ltd. | Halbisolierendes galliumarsenidkristallsubstrat |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2908004A (en) * | 1957-05-10 | 1959-10-06 | Levinson John | Temperature control for crystal pulling |
NL238924A (de) * | 1959-05-05 | |||
US3446603A (en) * | 1965-07-12 | 1969-05-27 | Bell Telephone Labor Inc | Growth of lithium niobate crystals |
GB1366532A (en) * | 1971-04-21 | 1974-09-11 | Nat Res Dev | Apparatus for the preparation and growth of crystalline material |
JPS55113669A (en) | 1979-02-26 | 1980-09-02 | Tokyo Shibaura Electric Co | Manufacture of ceramic coating grain |
US4299650A (en) * | 1979-10-12 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Minimization of strain in single crystals |
JPS5929558B2 (ja) * | 1979-10-22 | 1984-07-21 | 住友電気工業株式会社 | 半絶縁性砒化ガリウム結晶 |
US4544417A (en) * | 1983-05-27 | 1985-10-01 | Westinghouse Electric Corp. | Transient capless annealing process for the activation of ion implanted compound semiconductors |
JPS60122798A (ja) * | 1983-12-01 | 1985-07-01 | Sumitomo Electric Ind Ltd | 砒化ガリウム単結晶とその製造方法 |
-
1984
- 1984-10-05 JP JP59208262A patent/JPH0628234B2/ja not_active Expired - Lifetime
-
1985
- 1985-10-01 DE DE8585112427T patent/DE3575242D1/de not_active Expired - Lifetime
- 1985-10-01 EP EP85112427A patent/EP0177022B1/de not_active Expired - Lifetime
- 1985-10-04 KR KR1019850007286A patent/KR940006709B1/ko not_active IP Right Cessation
-
1993
- 1993-08-18 US US08/108,499 patent/US6297523B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0177022A2 (de) | 1986-04-09 |
KR860003652A (ko) | 1986-05-28 |
JPS6187376A (ja) | 1986-05-02 |
EP0177022B1 (de) | 1990-01-03 |
EP0177022A3 (en) | 1987-01-07 |
KR940006709B1 (ko) | 1994-07-25 |
US6297523B1 (en) | 2001-10-02 |
JPH0628234B2 (ja) | 1994-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |