DE3485188D1 - Statisches halbleiterspeichergeraet mit eingebauten redundanzspeicherzellen. - Google Patents
Statisches halbleiterspeichergeraet mit eingebauten redundanzspeicherzellen.Info
- Publication number
- DE3485188D1 DE3485188D1 DE8484302044T DE3485188T DE3485188D1 DE 3485188 D1 DE3485188 D1 DE 3485188D1 DE 8484302044 T DE8484302044 T DE 8484302044T DE 3485188 T DE3485188 T DE 3485188T DE 3485188 D1 DE3485188 D1 DE 3485188D1
- Authority
- DE
- Germany
- Prior art keywords
- built
- storage device
- redundancy
- static semiconductor
- semiconductor storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
- G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58050347A JPH0652639B2 (ja) | 1983-03-28 | 1983-03-28 | 半導体記憶装置 |
JP58051535A JPS59178691A (ja) | 1983-03-29 | 1983-03-29 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3485188D1 true DE3485188D1 (de) | 1991-11-28 |
Family
ID=26390811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484302044T Expired - Fee Related DE3485188D1 (de) | 1983-03-28 | 1984-03-27 | Statisches halbleiterspeichergeraet mit eingebauten redundanzspeicherzellen. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4587639A (de) |
EP (1) | EP0121394B1 (de) |
DE (1) | DE3485188D1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0186175A3 (de) * | 1984-12-24 | 1989-02-08 | Nec Corporation | Halbleiterspeichergerät mit Redundanzstruktur |
FR2576133B1 (fr) * | 1985-01-15 | 1991-04-26 | Eurotechnique Sa | Memoire en circuit integre a haute fiabilite |
US4839862A (en) * | 1986-08-15 | 1989-06-13 | Nec Corporation | Static random access memory having Bi-CMOS construction |
US5687109A (en) * | 1988-05-31 | 1997-11-11 | Micron Technology, Inc. | Integrated circuit module having on-chip surge capacitors |
US5235548A (en) * | 1989-04-13 | 1993-08-10 | Dallas Semiconductor Corp. | Memory with power supply intercept in redundancy logic |
US5471427A (en) * | 1989-06-05 | 1995-11-28 | Mitsubishi Denki Kabushiki Kaisha | Circuit for repairing defective bit in semiconductor memory device and repairing method |
JP2659436B2 (ja) * | 1989-08-25 | 1997-09-30 | 富士通株式会社 | 半導体記憶装置 |
JPH03245400A (ja) * | 1990-02-21 | 1991-10-31 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JP2782948B2 (ja) * | 1990-11-16 | 1998-08-06 | 日本電気株式会社 | 半導体メモリ |
JP3115623B2 (ja) * | 1991-02-25 | 2000-12-11 | 株式会社日立製作所 | スタティック型ram |
JP2888034B2 (ja) * | 1991-06-27 | 1999-05-10 | 日本電気株式会社 | 半導体メモリ装置 |
US5323353A (en) * | 1993-04-08 | 1994-06-21 | Sharp Microelectronics Technology Inc. | Method and apparatus for repair of memory by redundancy |
US5768206A (en) * | 1995-06-07 | 1998-06-16 | Sgs-Thomson Microelectronics, Inc. | Circuit and method for biasing bit lines |
KR0157339B1 (ko) * | 1995-06-28 | 1998-12-01 | 김광호 | 반도체 메모리의 불량셀 구제회로 |
US6249464B1 (en) | 1999-12-15 | 2001-06-19 | Cypress Semiconductor Corp. | Block redundancy in ultra low power memory circuits |
KR100320683B1 (ko) * | 2000-02-03 | 2002-01-17 | 윤종용 | 스탠바이 전류불량 구제기능을 가지는 반도체 메모리 장치 |
US7117400B2 (en) * | 2002-11-13 | 2006-10-03 | International Business Machines Corporation | Memory device with data line steering and bitline redundancy |
TWI242213B (en) * | 2003-09-09 | 2005-10-21 | Winbond Electronics Corp | Device and method of leakage current cuter and memory cell and memory device thereof |
DE602005013964D1 (de) * | 2005-09-29 | 2009-05-28 | Qimonda Ag | Speicher mit Widerstandspeicherzellenmatrix und Bitleitungsaufladung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4053873A (en) * | 1976-06-30 | 1977-10-11 | International Business Machines Corporation | Self-isolating cross-coupled sense amplifier latch circuit |
JPS5522238A (en) * | 1978-07-31 | 1980-02-16 | Fujitsu Ltd | Decoder circuit |
US4228528B2 (en) * | 1979-02-09 | 1992-10-06 | Memory with redundant rows and columns | |
US4281398A (en) * | 1980-02-12 | 1981-07-28 | Mostek Corporation | Block redundancy for memory array |
JPS58208998A (ja) * | 1982-05-28 | 1983-12-05 | Toshiba Corp | 半導体cmosメモリ |
-
1984
- 1984-03-27 EP EP19840302044 patent/EP0121394B1/de not_active Expired - Lifetime
- 1984-03-27 DE DE8484302044T patent/DE3485188D1/de not_active Expired - Fee Related
- 1984-03-27 US US06/593,771 patent/US4587639A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0121394A3 (en) | 1988-01-27 |
EP0121394A2 (de) | 1984-10-10 |
EP0121394B1 (de) | 1991-10-23 |
US4587639A (en) | 1986-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |