DE3380864D1 - Transistors - Google Patents
TransistorsInfo
- Publication number
- DE3380864D1 DE3380864D1 DE8383200465T DE3380864T DE3380864D1 DE 3380864 D1 DE3380864 D1 DE 3380864D1 DE 8383200465 T DE8383200465 T DE 8383200465T DE 3380864 T DE3380864 T DE 3380864T DE 3380864 D1 DE3380864 D1 DE 3380864D1
- Authority
- DE
- Germany
- Prior art keywords
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08210534A GB2118363A (en) | 1982-04-08 | 1982-04-08 | Hot-electron and hot-hole transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3380864D1 true DE3380864D1 (en) | 1989-12-21 |
Family
ID=10529630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383200465T Expired DE3380864D1 (en) | 1982-04-08 | 1983-03-31 | Transistors |
Country Status (5)
Country | Link |
---|---|
US (1) | US4566020A (de) |
EP (1) | EP0091710B1 (de) |
JP (1) | JPS58186965A (de) |
DE (1) | DE3380864D1 (de) |
GB (1) | GB2118363A (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0744182B2 (ja) * | 1984-11-09 | 1995-05-15 | 株式会社日立製作所 | ヘテロ接合バイポ−ラ・トランジスタ |
GB2191037A (en) * | 1986-05-23 | 1987-12-02 | Philips Electronic Associated | Hot charge-carrier transistors |
GB2191035A (en) * | 1986-05-23 | 1987-12-02 | Philips Electronic Associated | Hot charge-carrier transistors |
US4901122A (en) * | 1987-08-14 | 1990-02-13 | Regents Of The University Of Minnesota | Double-base hot carrier transistor |
JPH01171269A (ja) * | 1987-12-26 | 1989-07-06 | Fujitsu Ltd | 半導体装置 |
US20030087466A1 (en) * | 2001-11-06 | 2003-05-08 | Yuqi Wang | Phototransistor device |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2056166B (en) * | 1979-08-08 | 1983-09-14 | Philips Electronic Associated | Hot-electron or hot-hole transistor |
JPS5675541A (en) * | 1979-11-22 | 1981-06-22 | Sumitomo Light Metal Ind Ltd | Copper alloy for water or hot water supply piping material and heat exchanger tube material |
US4492971A (en) * | 1980-06-05 | 1985-01-08 | At&T Bell Laboratories | Metal silicide-silicon heterostructures |
US4394673A (en) * | 1980-09-29 | 1983-07-19 | International Business Machines Corporation | Rare earth silicide Schottky barriers |
US4410902A (en) * | 1981-03-23 | 1983-10-18 | The United States Of America As Represented By The Secretary Of The Army | Planar doped barrier semiconductor device |
US4446476A (en) * | 1981-06-30 | 1984-05-01 | International Business Machines Corporation | Integrated circuit having a sublayer electrical contact and fabrication thereof |
-
1982
- 1982-04-08 GB GB08210534A patent/GB2118363A/en not_active Withdrawn
-
1983
- 1983-03-31 EP EP83200465A patent/EP0091710B1/de not_active Expired
- 1983-03-31 DE DE8383200465T patent/DE3380864D1/de not_active Expired
- 1983-04-01 US US06/481,517 patent/US4566020A/en not_active Expired - Fee Related
- 1983-04-08 JP JP58061067A patent/JPS58186965A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0249025B2 (de) | 1990-10-26 |
US4566020A (en) | 1986-01-21 |
EP0091710A3 (en) | 1986-10-01 |
EP0091710B1 (de) | 1989-11-15 |
JPS58186965A (ja) | 1983-11-01 |
GB2118363A (en) | 1983-10-26 |
EP0091710A2 (de) | 1983-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |