GB2114364B - Field effect transistors - Google Patents

Field effect transistors

Info

Publication number
GB2114364B
GB2114364B GB08202466A GB8202466A GB2114364B GB 2114364 B GB2114364 B GB 2114364B GB 08202466 A GB08202466 A GB 08202466A GB 8202466 A GB8202466 A GB 8202466A GB 2114364 B GB2114364 B GB 2114364B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
transistors
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08202466A
Other versions
GB2114364A (en
Inventor
George Horace Brooke Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB08202466A priority Critical patent/GB2114364B/en
Publication of GB2114364A publication Critical patent/GB2114364A/en
Application granted granted Critical
Publication of GB2114364B publication Critical patent/GB2114364B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
GB08202466A 1982-01-28 1982-01-28 Field effect transistors Expired GB2114364B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08202466A GB2114364B (en) 1982-01-28 1982-01-28 Field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08202466A GB2114364B (en) 1982-01-28 1982-01-28 Field effect transistors

Publications (2)

Publication Number Publication Date
GB2114364A GB2114364A (en) 1983-08-17
GB2114364B true GB2114364B (en) 1985-06-19

Family

ID=10527941

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08202466A Expired GB2114364B (en) 1982-01-28 1982-01-28 Field effect transistors

Country Status (1)

Country Link
GB (1) GB2114364B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386555A (en) * 1986-09-30 1988-04-16 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
GB2114364A (en) 1983-08-17

Similar Documents

Publication Publication Date Title
DE3376713D1 (en) Double heterojunction field effect transistors
EP0091831A3 (en) Mobility-modulation field effect transistor
DE3176252D1 (en) Field effect transistor
GB2106711B (en) Field effect transistor
GB2074372B (en) Integrated circuit field effect transistors
DE3273867D1 (en) Field effect transistor
JPS57104268A (en) Field effect transistor
GB2085656B (en) Field effect transistor
GB2090061B (en) Field effect transistors
DE3373602D1 (en) Transistor output circuit
GB8322625D0 (en) Field effect transistor
DE3377185D1 (en) Transistor circuit
GB2156579B (en) Field effect transistors
DE3380864D1 (en) Transistors
GB8300617D0 (en) Junction field effect transistor
JPS57192081A (en) Field effect transistor unit
DE3175010D1 (en) Field effect transistor
GB2128026B (en) Transistors
JPS56147506A (en) Field effect transistor circuit
GB2129216B (en) Field effect transistors
JPS57204172A (en) Field effect transistor
GB2114364B (en) Field effect transistors
GB2069754B (en) Field effect transistor
GB2129214B (en) Bipolar transistors
GB2089565B (en) Transistors

Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee