DE3176751D1 - Semiconductor memory with improved data programming time - Google Patents
Semiconductor memory with improved data programming timeInfo
- Publication number
- DE3176751D1 DE3176751D1 DE8181304660T DE3176751T DE3176751D1 DE 3176751 D1 DE3176751 D1 DE 3176751D1 DE 8181304660 T DE8181304660 T DE 8181304660T DE 3176751 T DE3176751 T DE 3176751T DE 3176751 D1 DE3176751 D1 DE 3176751D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- improved data
- programming time
- data programming
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14394880A JPS5769584A (en) | 1980-10-15 | 1980-10-15 | Non-volatile semiconductor memory |
JP14394780A JPS5769583A (en) | 1980-10-15 | 1980-10-15 | Non_volatile semiconductor memory |
JP55143949A JPS6014440B2 (ja) | 1980-10-15 | 1980-10-15 | 不揮発性半導体メモリ− |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3176751D1 true DE3176751D1 (en) | 1988-06-23 |
Family
ID=27318741
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181304660T Expired DE3176751D1 (en) | 1980-10-15 | 1981-10-07 | Semiconductor memory with improved data programming time |
DE8686201618T Expired - Lifetime DE3177270D1 (de) | 1980-10-15 | 1981-10-07 | Halbleiterspeicher mit datenprogrammierzeit. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686201618T Expired - Lifetime DE3177270D1 (de) | 1980-10-15 | 1981-10-07 | Halbleiterspeicher mit datenprogrammierzeit. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4477884A (de) |
EP (1) | EP0050005B1 (de) |
DE (2) | DE3176751D1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4578777A (en) * | 1983-07-11 | 1986-03-25 | Signetics Corporation | One step write circuit arrangement for EEPROMS |
US4566080A (en) * | 1983-07-11 | 1986-01-21 | Signetics Corporation | Byte wide EEPROM with individual write circuits |
US4599707A (en) * | 1984-03-01 | 1986-07-08 | Signetics Corporation | Byte wide EEPROM with individual write circuits and write prevention means |
JPS6177199A (ja) * | 1984-09-21 | 1986-04-19 | Toshiba Corp | 半導体記憶装置 |
US4618784A (en) * | 1985-01-28 | 1986-10-21 | International Business Machines Corporation | High-performance, high-density CMOS decoder/driver circuit |
US4617477A (en) * | 1985-05-21 | 1986-10-14 | At&T Bell Laboratories | Symmetrical output complementary buffer |
JPS6240698A (ja) * | 1985-08-16 | 1987-02-21 | Fujitsu Ltd | 半導体記憶装置 |
JPS62114200A (ja) * | 1985-11-13 | 1987-05-25 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US4725743A (en) * | 1986-04-25 | 1988-02-16 | International Business Machines Corporation | Two-stage digital logic circuits including an input switching stage and an output driving stage incorporating gallium arsenide FET devices |
US5050124A (en) * | 1986-09-30 | 1991-09-17 | Kabushiki Kaisha Toshiba | Semiconductor memory having load transistor circuit |
FR2605447B1 (fr) * | 1986-10-20 | 1988-12-09 | Eurotechnique Sa | Memoire non volatile programmable electriquement |
DE3884820T2 (de) * | 1987-07-29 | 1994-01-27 | Toshiba Kawasaki Kk | Nichtflüchtige Halbleiterspeichereinrichtung. |
JP2830066B2 (ja) * | 1989-05-25 | 1998-12-02 | ソニー株式会社 | 半導体メモリ |
US5065364A (en) * | 1989-09-15 | 1991-11-12 | Intel Corporation | Apparatus for providing block erasing in a flash EPROM |
FR2665793B1 (fr) * | 1990-08-10 | 1993-06-18 | Sgs Thomson Microelectronics | Circuit integre de memoire avec redondance et adressage ameliore en mode de test. |
US5466117A (en) * | 1993-06-10 | 1995-11-14 | Xilinx, Inc. | Device and method for programming multiple arrays of semiconductor devices |
JP3432548B2 (ja) * | 1993-07-26 | 2003-08-04 | 株式会社日立製作所 | 半導体記憶装置 |
US5392248A (en) * | 1993-10-26 | 1995-02-21 | Texas Instruments Incorporated | Circuit and method for detecting column-line shorts in integrated-circuit memories |
AU754666B2 (en) * | 1995-03-13 | 2002-11-21 | Riviera Homes Pty Ltd | Apparatus for and method of securing trailed vehicles |
US6134144A (en) * | 1997-09-19 | 2000-10-17 | Integrated Memory Technologies, Inc. | Flash memory array |
KR100505709B1 (ko) * | 2003-09-08 | 2005-08-03 | 삼성전자주식회사 | 상 변화 메모리 장치의 파이어링 방법 및 효율적인파이어링을 수행할 수 있는 상 변화 메모리 장치 |
US7272070B2 (en) * | 2004-12-21 | 2007-09-18 | Infineon Technologies Ag | Memory access using multiple activated memory cell rows |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52130536A (en) * | 1976-04-26 | 1977-11-01 | Toshiba Corp | Semiconductor memory unit |
US4079462A (en) * | 1976-05-07 | 1978-03-14 | Intel Corporation | Refreshing apparatus for MOS dynamic RAMs |
JPS5320825A (en) * | 1976-08-11 | 1978-02-25 | Hitachi Ltd | Memory control system |
US4301535A (en) * | 1979-07-02 | 1981-11-17 | Mostek Corporation | Programmable read only memory integrated circuit with bit-check and deprogramming modes and methods for programming and testing said circuit |
-
1981
- 1981-10-07 EP EP81304660A patent/EP0050005B1/de not_active Expired
- 1981-10-07 DE DE8181304660T patent/DE3176751D1/de not_active Expired
- 1981-10-07 DE DE8686201618T patent/DE3177270D1/de not_active Expired - Lifetime
- 1981-10-13 US US06/310,822 patent/US4477884A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0050005B1 (de) | 1988-05-18 |
US4477884A (en) | 1984-10-16 |
EP0050005A3 (en) | 1983-08-10 |
DE3177270D1 (de) | 1992-02-27 |
EP0050005A2 (de) | 1982-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |