DE3169122D1 - Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process - Google Patents

Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process

Info

Publication number
DE3169122D1
DE3169122D1 DE8181201350T DE3169122T DE3169122D1 DE 3169122 D1 DE3169122 D1 DE 3169122D1 DE 8181201350 T DE8181201350 T DE 8181201350T DE 3169122 T DE3169122 T DE 3169122T DE 3169122 D1 DE3169122 D1 DE 3169122D1
Authority
DE
Germany
Prior art keywords
transistors
manufacture
gate electrode
field
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181201350T
Other languages
English (en)
Inventor
Didier Meignant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV filed Critical Electronique & Physique
Application granted granted Critical
Publication of DE3169122D1 publication Critical patent/DE3169122D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
DE8181201350T 1980-12-24 1981-12-11 Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process Expired DE3169122D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8027423A FR2496982A1 (fr) 1980-12-24 1980-12-24 Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus

Publications (1)

Publication Number Publication Date
DE3169122D1 true DE3169122D1 (en) 1985-03-28

Family

ID=9249463

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181201350T Expired DE3169122D1 (en) 1980-12-24 1981-12-11 Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process

Country Status (5)

Country Link
US (1) US4429452A (de)
EP (1) EP0054998B1 (de)
JP (1) JPS57133682A (de)
DE (1) DE3169122D1 (de)
FR (1) FR2496982A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532471A1 (fr) * 1982-09-01 1984-03-02 Labo Electronique Physique Procede de realisation d'ouverture de faible dimension, utilisation de ce procede pour la fabrication de transistors a effet de champ, a grille alignee submicronique, et transistors ainsi obtenus
US4651179A (en) * 1983-01-21 1987-03-17 Rca Corporation Low resistance gallium arsenide field effect transistor
US4545109A (en) * 1983-01-21 1985-10-08 Rca Corporation Method of making a gallium arsenide field effect transistor
JPS59165461A (ja) * 1983-03-10 1984-09-18 Oki Electric Ind Co Ltd ショットキ接合形化合物半導体電界効果トランジスタの製造方法
JPS59177970A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd 半導体装置及びその製造方法
JPH065682B2 (ja) * 1983-05-09 1994-01-19 日本電気株式会社 半導体装置の製造方法
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
US4784967A (en) * 1986-12-19 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating a field-effect transistor with a self-aligned gate
US5185293A (en) * 1992-04-10 1993-02-09 Eastman Kodak Company Method of forming and aligning patterns in deposted overlaying on GaAs
US5432119A (en) * 1994-01-31 1995-07-11 Hughes Aircraft Company High yield electron-beam gate fabrication method for sub-micron gate FETS
US11234698B2 (en) 2019-12-19 2022-02-01 Cilag Gmbh International Stapling system comprising a clamp lockout and a firing lockout

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5131186A (de) * 1974-09-11 1976-03-17 Hitachi Ltd
GB1563913A (en) * 1975-12-12 1980-04-02 Hughes Aircraft Co Method of making schottky-barrier gallium arsenide field effect devices
US4194285A (en) * 1978-06-15 1980-03-25 Rca Corporation Method of making a field effect transistor
JPS5591833A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Method of forming submicron pattern

Also Published As

Publication number Publication date
EP0054998A1 (de) 1982-06-30
FR2496982A1 (fr) 1982-06-25
JPS57133682A (en) 1982-08-18
US4429452A (en) 1984-02-07
EP0054998B1 (de) 1985-02-20
FR2496982B1 (de) 1984-08-24

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee