DE2412912A1 - METHOD FOR ELECTROPLATING SILICON CARBIDE BODIES - Google Patents

METHOD FOR ELECTROPLATING SILICON CARBIDE BODIES

Info

Publication number
DE2412912A1
DE2412912A1 DE2412912A DE2412912A DE2412912A1 DE 2412912 A1 DE2412912 A1 DE 2412912A1 DE 2412912 A DE2412912 A DE 2412912A DE 2412912 A DE2412912 A DE 2412912A DE 2412912 A1 DE2412912 A1 DE 2412912A1
Authority
DE
Germany
Prior art keywords
silicon carbide
electroplating
carbide bodies
nickel
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE2412912A
Other languages
German (de)
Other versions
DE2412912C2 (en
Inventor
Bryan Edward Ingleby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Publication of DE2412912A1 publication Critical patent/DE2412912A1/en
Application granted granted Critical
Publication of DE2412912C2 publication Critical patent/DE2412912C2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

Verfahren zum Elektroplattieren von SiliziumcarbidkörpernProcess for electroplating silicon carbide bodies

In der Technik besteht ein Bedürfnis nach einem Verfahren zum Verbinden metallischer Teile mit Siliziumcarbidkörpern, die seIbst-gebunden sind, d.h. solchen Körpern, die aus einer gepreßten Mischung von grünem Siliziumcarbid und Kohlenstoff durch Behandlung mit geschmolzenem oder dampfförmigem Silizium erhalten werden. Erfiiidungs gemäß wird ein selbst-gebundener Siliziumcarbidkörper zuerst einer Behandlung zur Entfernung von freiem Silizium aus der Oberfläche des Körpers unterworfen und dann mit einem Metall elektro-There is a need in the art for a method of joining metallic parts to silicon carbide bodies, which are self-bound, i.e. bodies that are made up of a pressed mixture of green silicon carbide and Carbon can be obtained by treatment with molten or vaporous silicon. According to the invention, a self-bonded silicon carbide body first undergoes a treatment to remove free silicon from the surface of the body and then electro-

409839/0962409839/0962

plattiert. Die metallische Plattierung kann anschließend mit einem metallischen Teil, beispielsweise durch Löten verbunden werden.plated. The metallic plating can then with a metallic part, for example by soldering get connected.

Vorzugsweise werden zum Plattieren Nickel und Kupfer verwendet. Nickel and copper are preferably used for plating.

Die Vorplattierungsbehandlung des Siliziumcarbidkörpers · zur Entfernung von freiem Silizium kann durch Eintauchen in kaustisches Alkali, beispielsweise Natriumhydroxyd oder in ein Gemisch aus Fluorwasserstoffsäure und Salpetersäure erfolgen.The pre-plating treatment of the silicon carbide body to remove free silicon can be performed by dipping in caustic alkali, for example sodium hydroxide or in a mixture of hydrofluoric acid and nitric acid take place.

Nach einer bevorzugten Ausführungsform der vorliegenden Erfindung wurde ein selbst-gebundener Sillziumcarbidkörper in einer 30$Igen kochenden Lösung aus kaustischem Soda während mehreren Stunden ausgelaugt, um das freie Silizium aus der Oberflächenschicht zu entfernen. Der Körper wurde anschließend unter Verwendung einer herkömmlichen Plattierungslösung folgender Zusammensetzung mit Nickel plattiert:According to a preferred embodiment of the present Invention was a self-bonded silicon carbide body in a 30% boiling solution of caustic soda during several hours to remove the free silicon from the surface layer. The body became then plated with nickel using a conventional plating solution of the following composition:

Nickelchlorid, 100 TeileNickel chloride, 100 parts

Nickelsulfat 600 TeileNickel sulfate 600 parts

Borsäure 70 TeileBoric acid 70 parts

- 3 409839/0962 - 3 409839/0962

Natrlumformiat 30 TeileSodium formate 30 parts

Teepol 40 TeileTeepol 40 parts

Wasser 2000 TeileWater 2000 parts

Die Plattierung mit Nickel erfolgte bei 600C mit einer Nickel-Anode und dem Siliziumcarbidkörper als Kathode. Die Spannung wurde eingestellt und das Plattieren mit einem Strom von 1/4 A begonnen, bis sich eine beginnende Bindung und eine vollständig plattierte Schicht ausgebildet hatte. Der Strom wurde dann auf 1 A erhöht und das Plattieren so lange fortgesetzt, bis die gewünschte Dicke, beispielsweise zwischen 0,020 und 0,050 Zoll erreicht war.The plating with nickel took place at 60 ° C. with a nickel anode and the silicon carbide body as cathode. The voltage was adjusted and plating commenced with a current of 1/4 A until an incipient bond and a fully plated layer had formed. The current was then increased to 1A and plating continued until the desired thickness, for example between 0.020 and 0.050 inches, was achieved.

Ein auf die vorstehend beschriebene Weise plattierter Siliziumcarbidkörper mit einer 0,020 bis 0,050 Zoll dicken Plattiersohicht wurde mit rostfreien Stählen verbunden, wobei als Lötmaterial gewöhnliches Silberlot mit einer Zusammensetzung von 50$ Silber, 15$ Kupfer, 16$ Zink und 19$ Cadmium verwendet wurde. Das verwendete Flußmittel war "Easyflo" von rostfreier Qualität, wie es von der Firma Johnson Mattey Ltd., 81 Hatton Garden, London" vertrieben, wird.One plated in the manner described above Silicon carbide body with a 0.020 to 0.050 inch thick cladding layer was bonded to stainless steels, where the soldering material is ordinary silver solder with a composition of 50 $ silver, 15 $ copper, 16 $ Zinc and $ 19 cadmium was used. The flux used was stainless grade "Easyflo" like that by Johnson Mattey Ltd., 81 Hatton Garden, London "is sold.

- 4 409839/096 2- 4 409839/096 2

Claims (4)

Patentansprüche :Patent claims: (l.; Verfahren zum Verbinden eines selbst-gebundenen Siliziumcarbidkörpers mit einem Metallteil, dadurch gekennzeichnet, daß man den Siliziumcarbidkörper einer Behandlung zur Entfernung des freien Siliziums aus1 der Oberfläche des Körpers unterwirft, den auf diese Weise behandelten Körper mit einem Metall elektroplattiert und anschließend den elektroplattieren Körper gegebenenfalls mit einem anderen Metallteil verbindet.(l .; method of connecting a self-bonded silicon carbide body with a metal part, characterized in that subjecting the silicon carbide body to a treatment for removal of the free silicon from 1 of the surface of the body, electroplating the thus treated body with a metal and then optionally connects the electroplated body to another metal part. 2. Verfahren nach Anspruch I5 dadurch gekennzeichnet, daß man mit Nickel oder Kupfer elektroplattiert.2. The method according to claim I 5, characterized in that it is electroplated with nickel or copper. 3. Verfahren nach einem der Ansprüche 1 bis 2, dadurch gekennzeichnet, daß man das freie Silizium durch Eintauchen des Körpers in kaustisches Alkali oder in ein Gemisch aus Fluorwasserstoffsäure und Salpetersäure entfernt. 3. The method according to any one of claims 1 to 2, characterized in that the free silicon is immersed of the body in caustic alkali or in a mixture of hydrofluoric acid and nitric acid. 4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß man den plattierten Körper mit rostfreiem Stahl verbindet.4. The method according to any one of claims 1 to 3, characterized characterized by joining the clad body with stainless steel. 409839/0962409839/0962
DE2412912A 1973-03-22 1974-03-18 Pretreatment process for joining a self-bonded silicon carbide body to a metal part Expired DE2412912C2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1397373A GB1452901A (en) 1973-03-22 1973-03-22 Silicon carbide bodies

Publications (2)

Publication Number Publication Date
DE2412912A1 true DE2412912A1 (en) 1974-09-26
DE2412912C2 DE2412912C2 (en) 1985-04-18

Family

ID=10032734

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2412912A Expired DE2412912C2 (en) 1973-03-22 1974-03-18 Pretreatment process for joining a self-bonded silicon carbide body to a metal part

Country Status (4)

Country Link
US (1) US3874069A (en)
CH (1) CH602516A5 (en)
DE (1) DE2412912C2 (en)
GB (1) GB1452901A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3344958C1 (en) * 1983-12-13 1984-07-19 VEGLA Vereinigte Glaswerke GmbH, 5100 Aachen Method for soldering a power connection element to the power supply conductor of a heatable glass pane
US4730765A (en) * 1984-12-06 1988-03-15 Tomlinson Peter N Method of bonding by use of a phosphorus containing coating
US4871108A (en) * 1985-01-17 1989-10-03 Stemcor Corporation Silicon carbide-to-metal joint and method of making same
US20080131724A1 (en) * 2006-12-05 2008-06-05 Henry Shiu-Hung Chu Ceramic armor, methods of joining a carbide with a metal-comprising piece, and methods of metallizing carbide-comprising surfaces
CN102335842A (en) * 2010-07-16 2012-02-01 贵州红林机械有限公司 Grinding method of aluminum alloy workpiece

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE750365C (en) * 1940-07-07 1945-01-09 Process for the electroplating of carbide-containing sintered bodies or such molten alloys made of tungsten, molybdenum, titanium or zirconium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2885329A (en) * 1951-05-10 1959-05-05 Harvey L Slatin Method for electro-nickel plating wolfram carbide
US3620799A (en) * 1968-12-26 1971-11-16 Rca Corp Method for metallizing a ceramic body
JPS4928572B1 (en) * 1969-08-26 1974-07-27
US3813759A (en) * 1971-09-09 1974-06-04 English Electric Co Ltd Method of brazing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE750365C (en) * 1940-07-07 1945-01-09 Process for the electroplating of carbide-containing sintered bodies or such molten alloys made of tungsten, molybdenum, titanium or zirconium

Also Published As

Publication number Publication date
DE2412912C2 (en) 1985-04-18
GB1452901A (en) 1976-10-20
CH602516A5 (en) 1978-07-31
US3874069A (en) 1975-04-01

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D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SCHWABE, H., DIPL.-ING. SANDMAIR, K., DIPL.-CHEM. DR.JUR. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee