US7323581B1
(en)
*
|
1990-07-06 |
2008-01-29 |
Advanced Technology Materials, Inc. |
Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
|
US6153519A
(en)
*
|
1997-03-31 |
2000-11-28 |
Motorola, Inc. |
Method of forming a barrier layer
|
US6461675B2
(en)
|
1998-07-10 |
2002-10-08 |
Cvc Products, Inc. |
Method for forming a copper film on a substrate
|
US6190732B1
(en)
|
1998-09-03 |
2001-02-20 |
Cvc Products, Inc. |
Method and system for dispensing process gas for fabricating a device on a substrate
|
KR20000022003A
(ko)
*
|
1998-09-10 |
2000-04-25 |
이경수 |
금속과규소를포함한3성분질화물막의형성방법
|
US6974766B1
(en)
*
|
1998-10-01 |
2005-12-13 |
Applied Materials, Inc. |
In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
|
US7012292B1
(en)
*
|
1998-11-25 |
2006-03-14 |
Advanced Technology Materials, Inc |
Oxidative top electrode deposition process, and microelectronic device structure
|
US6294836B1
(en)
|
1998-12-22 |
2001-09-25 |
Cvc Products Inc. |
Semiconductor chip interconnect barrier material and fabrication method
|
US6616972B1
(en)
*
|
1999-02-24 |
2003-09-09 |
Air Products And Chemicals, Inc. |
Synthesis of metal oxide and oxynitride
|
US6204204B1
(en)
*
|
1999-04-01 |
2001-03-20 |
Cvc Products, Inc. |
Method and apparatus for depositing tantalum-based thin films with organmetallic precursor
|
US6245655B1
(en)
|
1999-04-01 |
2001-06-12 |
Cvc Products, Inc. |
Method for planarized deposition of a material
|
US6503561B1
(en)
*
|
1999-07-08 |
2003-01-07 |
Air Products And Chemicals, Inc. |
Liquid precursor mixtures for deposition of multicomponent metal containing materials
|
US6238734B1
(en)
*
|
1999-07-08 |
2001-05-29 |
Air Products And Chemicals, Inc. |
Liquid precursor mixtures for deposition of multicomponent metal containing materials
|
US6156743A
(en)
*
|
1999-10-18 |
2000-12-05 |
Whitcomb; John E. |
Method of decreasing fatigue
|
FI20000099A0
(fi)
|
2000-01-18 |
2000-01-18 |
Asm Microchemistry Ltd |
Menetelmä metalliohutkalvojen kasvattamiseksi
|
US6743473B1
(en)
*
|
2000-02-16 |
2004-06-01 |
Applied Materials, Inc. |
Chemical vapor deposition of barriers from novel precursors
|
US6319766B1
(en)
|
2000-02-22 |
2001-11-20 |
Applied Materials, Inc. |
Method of tantalum nitride deposition by tantalum oxide densification
|
US6627995B2
(en)
|
2000-03-03 |
2003-09-30 |
Cvc Products, Inc. |
Microelectronic interconnect material with adhesion promotion layer and fabrication method
|
US6984591B1
(en)
*
|
2000-04-20 |
2006-01-10 |
International Business Machines Corporation |
Precursor source mixtures
|
US20020003085A1
(en)
*
|
2000-05-19 |
2002-01-10 |
Chandran Ravi R. |
Multilayer electrochemical cell technology using sol-gel processing applied to ceramic oxygen generator
|
US6620723B1
(en)
*
|
2000-06-27 |
2003-09-16 |
Applied Materials, Inc. |
Formation of boride barrier layers using chemisorption techniques
|
US7405158B2
(en)
*
|
2000-06-28 |
2008-07-29 |
Applied Materials, Inc. |
Methods for depositing tungsten layers employing atomic layer deposition techniques
|
US6551929B1
(en)
*
|
2000-06-28 |
2003-04-22 |
Applied Materials, Inc. |
Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
|
US7101795B1
(en)
*
|
2000-06-28 |
2006-09-05 |
Applied Materials, Inc. |
Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
|
US6455421B1
(en)
|
2000-07-31 |
2002-09-24 |
Applied Materials, Inc. |
Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
|
US6444263B1
(en)
|
2000-09-15 |
2002-09-03 |
Cvc Products, Inc. |
Method of chemical-vapor deposition of a material
|
US20020036780A1
(en)
*
|
2000-09-27 |
2002-03-28 |
Hiroaki Nakamura |
Image processing apparatus
|
US6573150B1
(en)
*
|
2000-10-10 |
2003-06-03 |
Applied Materials, Inc. |
Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors
|
JP3963078B2
(ja)
*
|
2000-12-25 |
2007-08-22 |
株式会社高純度化学研究所 |
ターシャリーアミルイミドトリス(ジメチルアミド)タンタルとその製造方法及びそれを用いたmocvd用原料溶液並びにそれを用いた窒化タンタル膜の形成方法
|
US6998497B2
(en)
*
|
2001-03-12 |
2006-02-14 |
The Queen's University Of Belfast |
Metal bis-triflimide compounds and methods for synthesis of metal bis-triflimide compounds
|
US7005392B2
(en)
*
|
2001-03-30 |
2006-02-28 |
Advanced Technology Materials, Inc. |
Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
|
US7084080B2
(en)
*
|
2001-03-30 |
2006-08-01 |
Advanced Technology Materials, Inc. |
Silicon source reagent compositions, and method of making and using same for microelectronic device structure
|
KR100410389B1
(ko)
|
2001-06-12 |
2003-12-18 |
주식회사 하이닉스반도체 |
반도체 소자의 캐패시터 제조방법
|
KR100418580B1
(ko)
|
2001-06-12 |
2004-02-21 |
주식회사 하이닉스반도체 |
반도체 소자의 캐패시터 제조방법
|
KR100422565B1
(ko)
|
2001-06-12 |
2004-03-12 |
주식회사 하이닉스반도체 |
반도체 소자의 캐패시터 제조방법
|
US7098131B2
(en)
*
|
2001-07-19 |
2006-08-29 |
Samsung Electronics Co., Ltd. |
Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
|
US8110489B2
(en)
*
|
2001-07-25 |
2012-02-07 |
Applied Materials, Inc. |
Process for forming cobalt-containing materials
|
US20030029715A1
(en)
*
|
2001-07-25 |
2003-02-13 |
Applied Materials, Inc. |
An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
|
US20090004850A1
(en)
*
|
2001-07-25 |
2009-01-01 |
Seshadri Ganguli |
Process for forming cobalt and cobalt silicide materials in tungsten contact applications
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
US20080268635A1
(en)
*
|
2001-07-25 |
2008-10-30 |
Sang-Ho Yu |
Process for forming cobalt and cobalt silicide materials in copper contact applications
|
JP2005504885A
(ja)
|
2001-07-25 |
2005-02-17 |
アプライド マテリアルズ インコーポレイテッド |
新規なスパッタ堆積方法を使用したバリア形成
|
US6718126B2
(en)
|
2001-09-14 |
2004-04-06 |
Applied Materials, Inc. |
Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
|
US7049226B2
(en)
*
|
2001-09-26 |
2006-05-23 |
Applied Materials, Inc. |
Integration of ALD tantalum nitride for copper metallization
|
US6936906B2
(en)
*
|
2001-09-26 |
2005-08-30 |
Applied Materials, Inc. |
Integration of barrier layer and seed layer
|
US6916398B2
(en)
*
|
2001-10-26 |
2005-07-12 |
Applied Materials, Inc. |
Gas delivery apparatus and method for atomic layer deposition
|
US7780785B2
(en)
|
2001-10-26 |
2010-08-24 |
Applied Materials, Inc. |
Gas delivery apparatus for atomic layer deposition
|
US7204886B2
(en)
|
2002-11-14 |
2007-04-17 |
Applied Materials, Inc. |
Apparatus and method for hybrid chemical processing
|
US6773507B2
(en)
*
|
2001-12-06 |
2004-08-10 |
Applied Materials, Inc. |
Apparatus and method for fast-cycle atomic layer deposition
|
US7081271B2
(en)
|
2001-12-07 |
2006-07-25 |
Applied Materials, Inc. |
Cyclical deposition of refractory metal silicon nitride
|
US6939801B2
(en)
*
|
2001-12-21 |
2005-09-06 |
Applied Materials, Inc. |
Selective deposition of a barrier layer on a dielectric material
|
US6998014B2
(en)
*
|
2002-01-26 |
2006-02-14 |
Applied Materials, Inc. |
Apparatus and method for plasma assisted deposition
|
US6911391B2
(en)
|
2002-01-26 |
2005-06-28 |
Applied Materials, Inc. |
Integration of titanium and titanium nitride layers
|
US6833161B2
(en)
*
|
2002-02-26 |
2004-12-21 |
Applied Materials, Inc. |
Cyclical deposition of tungsten nitride for metal oxide gate electrode
|
US6972267B2
(en)
*
|
2002-03-04 |
2005-12-06 |
Applied Materials, Inc. |
Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
|
US6846516B2
(en)
*
|
2002-04-08 |
2005-01-25 |
Applied Materials, Inc. |
Multiple precursor cyclical deposition system
|
US6720027B2
(en)
*
|
2002-04-08 |
2004-04-13 |
Applied Materials, Inc. |
Cyclical deposition of a variable content titanium silicon nitride layer
|
US7279432B2
(en)
*
|
2002-04-16 |
2007-10-09 |
Applied Materials, Inc. |
System and method for forming an integrated barrier layer
|
US20040033371A1
(en)
*
|
2002-05-16 |
2004-02-19 |
Hacker Nigel P. |
Deposition of organosilsesquioxane films
|
KR100505043B1
(ko)
*
|
2002-05-25 |
2005-07-29 |
삼성전자주식회사 |
커패시터 형성 방법
|
US7041335B2
(en)
*
|
2002-06-04 |
2006-05-09 |
Applied Materials, Inc. |
Titanium tantalum nitride silicide layer
|
US6552209B1
(en)
*
|
2002-06-24 |
2003-04-22 |
Air Products And Chemicals, Inc. |
Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
|
US6838125B2
(en)
*
|
2002-07-10 |
2005-01-04 |
Applied Materials, Inc. |
Method of film deposition using activated precursor gases
|
US20040009336A1
(en)
*
|
2002-07-11 |
2004-01-15 |
Applied Materials, Inc. |
Titanium silicon nitride (TISIN) barrier layer for copper diffusion
|
US6955211B2
(en)
|
2002-07-17 |
2005-10-18 |
Applied Materials, Inc. |
Method and apparatus for gas temperature control in a semiconductor processing system
|
US7186385B2
(en)
|
2002-07-17 |
2007-03-06 |
Applied Materials, Inc. |
Apparatus for providing gas to a processing chamber
|
US7066194B2
(en)
*
|
2002-07-19 |
2006-06-27 |
Applied Materials, Inc. |
Valve design and configuration for fast delivery system
|
US6772072B2
(en)
|
2002-07-22 |
2004-08-03 |
Applied Materials, Inc. |
Method and apparatus for monitoring solid precursor delivery
|
US6915592B2
(en)
*
|
2002-07-29 |
2005-07-12 |
Applied Materials, Inc. |
Method and apparatus for generating gas to a processing chamber
|
GB2391555A
(en)
*
|
2002-08-09 |
2004-02-11 |
Epichem Ltd |
Vapour phase deposition of silicate and oxide films
|
US6995081B2
(en)
*
|
2002-08-28 |
2006-02-07 |
Micron Technology, Inc. |
Systems and methods for forming tantalum silicide layers
|
US6967159B2
(en)
|
2002-08-28 |
2005-11-22 |
Micron Technology, Inc. |
Systems and methods for forming refractory metal nitride layers using organic amines
|
US6794284B2
(en)
*
|
2002-08-28 |
2004-09-21 |
Micron Technology, Inc. |
Systems and methods for forming refractory metal nitride layers using disilazanes
|
US20040065255A1
(en)
*
|
2002-10-02 |
2004-04-08 |
Applied Materials, Inc. |
Cyclical layer deposition system
|
US6821563B2
(en)
|
2002-10-02 |
2004-11-23 |
Applied Materials, Inc. |
Gas distribution system for cyclical layer deposition
|
US6905737B2
(en)
*
|
2002-10-11 |
2005-06-14 |
Applied Materials, Inc. |
Method of delivering activated species for rapid cyclical deposition
|
US7244683B2
(en)
*
|
2003-01-07 |
2007-07-17 |
Applied Materials, Inc. |
Integration of ALD/CVD barriers with porous low k materials
|
US7262133B2
(en)
*
|
2003-01-07 |
2007-08-28 |
Applied Materials, Inc. |
Enhancement of copper line reliability using thin ALD tan film to cap the copper line
|
US6989457B2
(en)
*
|
2003-01-16 |
2006-01-24 |
Advanced Technology Materials, Inc. |
Chemical vapor deposition precursors for deposition of tantalum-based materials
|
US6753248B1
(en)
|
2003-01-27 |
2004-06-22 |
Applied Materials, Inc. |
Post metal barrier/adhesion film
|
US20040253386A1
(en)
*
|
2003-06-13 |
2004-12-16 |
Sarojini Deevi |
Preparation of intermetallics by metallo-organic decomposition
|
JP2007523994A
(ja)
*
|
2003-06-18 |
2007-08-23 |
アプライド マテリアルズ インコーポレイテッド |
バリヤ物質の原子層堆積
|
US7208427B2
(en)
*
|
2003-08-18 |
2007-04-24 |
Advanced Technology Materials, Inc. |
Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
|
US6964911B2
(en)
*
|
2003-09-23 |
2005-11-15 |
Freescale Semiconductor, Inc. |
Method for forming a semiconductor device having isolation regions
|
US20050067103A1
(en)
*
|
2003-09-26 |
2005-03-31 |
Applied Materials, Inc. |
Interferometer endpoint monitoring device
|
US6960675B2
(en)
*
|
2003-10-14 |
2005-11-01 |
Advanced Technology Materials, Inc. |
Tantalum amide complexes for depositing tantalum-containing films, and method of making same
|
US20050104142A1
(en)
*
|
2003-11-13 |
2005-05-19 |
Vijav Narayanan |
CVD tantalum compounds for FET get electrodes
|
US20050252449A1
(en)
|
2004-05-12 |
2005-11-17 |
Nguyen Son T |
Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
|
US8323754B2
(en)
*
|
2004-05-21 |
2012-12-04 |
Applied Materials, Inc. |
Stabilization of high-k dielectric materials
|
US20060062917A1
(en)
*
|
2004-05-21 |
2006-03-23 |
Shankar Muthukrishnan |
Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
|
US20060019033A1
(en)
*
|
2004-05-21 |
2006-01-26 |
Applied Materials, Inc. |
Plasma treatment of hafnium-containing materials
|
US20060153995A1
(en)
*
|
2004-05-21 |
2006-07-13 |
Applied Materials, Inc. |
Method for fabricating a dielectric stack
|
US7166732B2
(en)
*
|
2004-06-16 |
2007-01-23 |
Advanced Technology Materials, Inc. |
Copper (I) compounds useful as deposition precursors of copper thin films
|
US7241686B2
(en)
*
|
2004-07-20 |
2007-07-10 |
Applied Materials, Inc. |
Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
|
KR101128542B1
(ko)
|
2004-11-02 |
2012-03-23 |
가부시키가이샤 아데카 |
금속화합물, 박막형성용 원료 및 박막의 제조방법
|
US20060102895A1
(en)
*
|
2004-11-16 |
2006-05-18 |
Hendrix Bryan C |
Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
|
US7429402B2
(en)
*
|
2004-12-10 |
2008-09-30 |
Applied Materials, Inc. |
Ruthenium as an underlayer for tungsten film deposition
|
JP5053543B2
(ja)
*
|
2005-02-02 |
2012-10-17 |
東ソー株式会社 |
タンタル化合物、その製造方法、タンタル含有薄膜、及びその形成方法
|
US7410927B2
(en)
*
|
2005-04-13 |
2008-08-12 |
Chevron Phillips Chemical Company, Lp |
Catalysts for olefin polymerization
|
US7247594B2
(en)
*
|
2005-04-13 |
2007-07-24 |
Chevron Phillips Chemical Co. Lp |
Catalysts for olefin polymerization
|
US9312557B2
(en)
*
|
2005-05-11 |
2016-04-12 |
Schlumberger Technology Corporation |
Fuel cell apparatus and method for downhole power systems
|
WO2007005088A2
(en)
*
|
2005-07-01 |
2007-01-11 |
Honeywell International Inc. |
Vaporizable metalorganic compounds for deposition of metals and metal-containing thin films
|
US20070020890A1
(en)
*
|
2005-07-19 |
2007-01-25 |
Applied Materials, Inc. |
Method and apparatus for semiconductor processing
|
US7521356B2
(en)
*
|
2005-09-01 |
2009-04-21 |
Micron Technology, Inc. |
Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
|
US20070065578A1
(en)
*
|
2005-09-21 |
2007-03-22 |
Applied Materials, Inc. |
Treatment processes for a batch ALD reactor
|
US7547796B2
(en)
*
|
2005-09-29 |
2009-06-16 |
Praxair Technology, Inc. |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US7550385B2
(en)
*
|
2005-09-30 |
2009-06-23 |
Intel Corporation |
Amine-free deposition of metal-nitride films
|
US8993055B2
(en)
|
2005-10-27 |
2015-03-31 |
Asm International N.V. |
Enhanced thin film deposition
|
US20070099422A1
(en)
*
|
2005-10-28 |
2007-05-03 |
Kapila Wijekoon |
Process for electroless copper deposition
|
CN101448977B
(zh)
*
|
2005-11-04 |
2010-12-15 |
应用材料股份有限公司 |
用于等离子体增强的原子层沉积的设备和工艺
|
US20070194470A1
(en)
*
|
2006-02-17 |
2007-08-23 |
Aviza Technology, Inc. |
Direct liquid injector device
|
US20070252299A1
(en)
*
|
2006-04-27 |
2007-11-01 |
Applied Materials, Inc. |
Synchronization of precursor pulsing and wafer rotation
|
US20070259111A1
(en)
*
|
2006-05-05 |
2007-11-08 |
Singh Kaushal K |
Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
|
US7798096B2
(en)
*
|
2006-05-05 |
2010-09-21 |
Applied Materials, Inc. |
Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
|
TWI395335B
(zh)
*
|
2006-06-30 |
2013-05-01 |
Applied Materials Inc |
奈米結晶的形成
|
US7959986B2
(en)
*
|
2006-08-09 |
2011-06-14 |
Praxair Technology, Inc. |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US7956207B2
(en)
*
|
2006-09-28 |
2011-06-07 |
Praxair Technology, Inc. |
Heteroleptic organometallic compounds
|
EP1916253A1
(de)
*
|
2006-10-26 |
2008-04-30 |
L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Gruppe-V-Metall enthaltende Vorläuferverbindungen und deren Verwendung zur Abscheidung von metallhaltigen dünnen Schichten
|
US8092695B2
(en)
*
|
2006-10-30 |
2012-01-10 |
Applied Materials, Inc. |
Endpoint detection for photomask etching
|
US20080099436A1
(en)
*
|
2006-10-30 |
2008-05-01 |
Michael Grimbergen |
Endpoint detection for photomask etching
|
US7775508B2
(en)
*
|
2006-10-31 |
2010-08-17 |
Applied Materials, Inc. |
Ampoule for liquid draw and vapor draw with a continuous level sensor
|
WO2008069821A1
(en)
*
|
2006-12-05 |
2008-06-12 |
Advanced Technology Materials, Inc. |
Metal aminotroponiminates, bis-oxazolinates and guanidinates
|
US7750173B2
(en)
|
2007-01-18 |
2010-07-06 |
Advanced Technology Materials, Inc. |
Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
|
US8821637B2
(en)
*
|
2007-01-29 |
2014-09-02 |
Applied Materials, Inc. |
Temperature controlled lid assembly for tungsten nitride deposition
|
WO2008128141A2
(en)
*
|
2007-04-12 |
2008-10-23 |
Advanced Technology Materials, Inc. |
Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd
|
US20100209610A1
(en)
*
|
2007-07-16 |
2010-08-19 |
Advanced Technology Materials, Inc. |
Group iv complexes as cvd and ald precursors for forming metal-containing thin films
|
US7585762B2
(en)
*
|
2007-09-25 |
2009-09-08 |
Applied Materials, Inc. |
Vapor deposition processes for tantalum carbide nitride materials
|
US7678298B2
(en)
*
|
2007-09-25 |
2010-03-16 |
Applied Materials, Inc. |
Tantalum carbide nitride materials by vapor deposition processes
|
US7824743B2
(en)
*
|
2007-09-28 |
2010-11-02 |
Applied Materials, Inc. |
Deposition processes for titanium nitride barrier and aluminum
|
US20090087561A1
(en)
*
|
2007-09-28 |
2009-04-02 |
Advanced Technology Materials, Inc. |
Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
|
WO2009129332A2
(en)
|
2008-04-16 |
2009-10-22 |
Asm America, Inc. |
Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
|
US20090275164A1
(en)
*
|
2008-05-02 |
2009-11-05 |
Advanced Technology Materials, Inc. |
Bicyclic guanidinates and bridging diamides as cvd/ald precursors
|
JP5639055B2
(ja)
|
2008-08-01 |
2014-12-10 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
タンタル含有層を基板上に形成する方法
|
US8491967B2
(en)
*
|
2008-09-08 |
2013-07-23 |
Applied Materials, Inc. |
In-situ chamber treatment and deposition process
|
US20100062149A1
(en)
|
2008-09-08 |
2010-03-11 |
Applied Materials, Inc. |
Method for tuning a deposition rate during an atomic layer deposition process
|
EP2174942B1
(de)
|
2008-10-07 |
2011-11-30 |
L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Metall-organische Niobium- und Vanadium-Vorläufer zur Dünnschichtablagerung
|
US8146896B2
(en)
*
|
2008-10-31 |
2012-04-03 |
Applied Materials, Inc. |
Chemical precursor ampoule for vapor deposition processes
|
US8330136B2
(en)
|
2008-12-05 |
2012-12-11 |
Advanced Technology Materials, Inc. |
High concentration nitrogen-containing germanium telluride based memory devices and processes of making
|
US9012876B2
(en)
|
2010-03-26 |
2015-04-21 |
Entegris, Inc. |
Germanium antimony telluride materials and devices incorporating same
|
US9190609B2
(en)
|
2010-05-21 |
2015-11-17 |
Entegris, Inc. |
Germanium antimony telluride materials and devices incorporating same
|
US8778204B2
(en)
|
2010-10-29 |
2014-07-15 |
Applied Materials, Inc. |
Methods for reducing photoresist interference when monitoring a target layer in a plasma process
|
US8961804B2
(en)
|
2011-10-25 |
2015-02-24 |
Applied Materials, Inc. |
Etch rate detection for photomask etching
|
US8808559B2
(en)
|
2011-11-22 |
2014-08-19 |
Applied Materials, Inc. |
Etch rate detection for reflective multi-material layers etching
|
US8900469B2
(en)
|
2011-12-19 |
2014-12-02 |
Applied Materials, Inc. |
Etch rate detection for anti-reflective coating layer and absorber layer etching
|
WO2013192220A1
(en)
|
2012-06-18 |
2013-12-27 |
University Of Florida Research Foundation, Inc. |
Tungsten nitrido precursors for the cvd of tungsten nitride, carbonitride, and oxide films
|
US9805939B2
(en)
|
2012-10-12 |
2017-10-31 |
Applied Materials, Inc. |
Dual endpoint detection for advanced phase shift and binary photomasks
|
CN103794596B
(zh)
*
|
2012-10-29 |
2016-08-10 |
中芯国际集成电路制造(上海)有限公司 |
标准晶片及其制造方法
|
US9640757B2
(en)
|
2012-10-30 |
2017-05-02 |
Entegris, Inc. |
Double self-aligned phase change memory device structure
|
US8778574B2
(en)
|
2012-11-30 |
2014-07-15 |
Applied Materials, Inc. |
Method for etching EUV material layers utilized to form a photomask
|
US9412602B2
(en)
|
2013-03-13 |
2016-08-09 |
Asm Ip Holding B.V. |
Deposition of smooth metal nitride films
|
US8846550B1
(en)
|
2013-03-14 |
2014-09-30 |
Asm Ip Holding B.V. |
Silane or borane treatment of metal thin films
|
US8841182B1
(en)
|
2013-03-14 |
2014-09-23 |
Asm Ip Holding B.V. |
Silane and borane treatments for titanium carbide films
|
US9394609B2
(en)
|
2014-02-13 |
2016-07-19 |
Asm Ip Holding B.V. |
Atomic layer deposition of aluminum fluoride thin films
|
US10643925B2
(en)
|
2014-04-17 |
2020-05-05 |
Asm Ip Holding B.V. |
Fluorine-containing conductive films
|
US10002936B2
(en)
|
2014-10-23 |
2018-06-19 |
Asm Ip Holding B.V. |
Titanium aluminum and tantalum aluminum thin films
|
US9941425B2
(en)
|
2015-10-16 |
2018-04-10 |
Asm Ip Holdings B.V. |
Photoactive devices and materials
|
US9786492B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
US9786491B2
(en)
|
2015-11-12 |
2017-10-10 |
Asm Ip Holding B.V. |
Formation of SiOCN thin films
|
KR102627456B1
(ko)
|
2015-12-21 |
2024-01-19 |
삼성전자주식회사 |
탄탈럼 화합물과 이를 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
|
TW201722971A
(zh)
*
|
2015-12-28 |
2017-07-01 |
Up Chemical Co Ltd |
鉭化合物、其製備方法、包含其的膜沉積用前體組合物及利用該前體組合物的膜沉積方法
|
KR102378021B1
(ko)
|
2016-05-06 |
2022-03-23 |
에이에스엠 아이피 홀딩 비.브이. |
SiOC 박막의 형성
|
US10847529B2
(en)
|
2017-04-13 |
2020-11-24 |
Asm Ip Holding B.V. |
Substrate processing method and device manufactured by the same
|
US10504901B2
(en)
|
2017-04-26 |
2019-12-10 |
Asm Ip Holding B.V. |
Substrate processing method and device manufactured using the same
|
US11158500B2
(en)
|
2017-05-05 |
2021-10-26 |
Asm Ip Holding B.V. |
Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
|
US10991573B2
(en)
|
2017-12-04 |
2021-04-27 |
Asm Ip Holding B.V. |
Uniform deposition of SiOC on dielectric and metal surfaces
|