DE19956472A1 - Flüssigkeits-Abgabesystem - Google Patents
Flüssigkeits-AbgabesystemInfo
- Publication number
- DE19956472A1 DE19956472A1 DE19956472A DE19956472A DE19956472A1 DE 19956472 A1 DE19956472 A1 DE 19956472A1 DE 19956472 A DE19956472 A DE 19956472A DE 19956472 A DE19956472 A DE 19956472A DE 19956472 A1 DE19956472 A1 DE 19956472A1
- Authority
- DE
- Germany
- Prior art keywords
- copper
- liquid
- delivery system
- liquid delivery
- carrier gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (12)
eine Flüssig-Kupfermaterial-Versorgungseinrichtung zur Versorgung einer Verdampfungs einrichtung mit Kupfer-Flüssigkeitsmaterialien bei Raumtemperatur über eine Öffnung, die sich mit einer konstanten Geschwindigkeit dreht;
eine Trägergas-Versorgungseinrichtung zum Ausstossen eines Trägergases, das bei einer Temperatur gehalten wird, bei der Kupfer über Ausstoss-Düsen verdampft wird, und zum Ausbilden des an die Verdampfungseinrichtung über die Öffnung abgegebene flüssigen Kup fermaterials als Mikro-Tropfen; und
eine Ausstoss-Einrichtung zum Ausstossen des verdampften Kupferdampfes in einer Reakti onskammer, wobei die Mikro-Tropfen in der Verdampfungseinrichtung verdampft werden.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR98-61355 | 1998-12-30 | ||
KR10-1998-0061355A KR100368319B1 (ko) | 1998-12-30 | 1998-12-30 | 액체운송장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19956472A1 true DE19956472A1 (de) | 2000-07-06 |
DE19956472B4 DE19956472B4 (de) | 2011-09-29 |
Family
ID=19568107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19956472A Expired - Fee Related DE19956472B4 (de) | 1998-12-30 | 1999-11-24 | Flüssigkeits-Abgabesystem und Verfahren zur Dampfabscheidung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6349887B1 (de) |
JP (1) | JP3831165B2 (de) |
KR (1) | KR100368319B1 (de) |
CN (1) | CN1139672C (de) |
DE (1) | DE19956472B4 (de) |
GB (1) | GB2345298B (de) |
TW (1) | TW414843B (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012203212A1 (de) * | 2012-03-01 | 2013-09-05 | Osram Opto Semiconductors Gmbh | Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses |
DE102012022744A1 (de) * | 2012-11-21 | 2014-05-22 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Vorrichtung zum Einstellen einer Gasphase in einer Reaktionskammer |
DE102016225257A1 (de) * | 2016-12-16 | 2018-06-21 | Robert Bosch Gmbh | Vorrichtung und Verfahren zum Verdampfen eines Ausgangsstoffs |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100649852B1 (ko) * | 1999-09-09 | 2006-11-24 | 동경 엘렉트론 주식회사 | 기화기 및 이것을 이용한 반도체 제조 시스템 |
KR100338112B1 (ko) * | 1999-12-22 | 2002-05-24 | 박종섭 | 반도체 소자의 구리 금속 배선 형성 방법 |
US6596085B1 (en) | 2000-02-01 | 2003-07-22 | Applied Materials, Inc. | Methods and apparatus for improved vaporization of deposition material in a substrate processing system |
US7163197B2 (en) * | 2000-09-26 | 2007-01-16 | Shimadzu Corporation | Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method |
US7083115B2 (en) * | 2001-10-04 | 2006-08-01 | Spraying Systems Co. | Spray gun with removable heat jacket |
KR100454292B1 (ko) * | 2002-01-07 | 2004-10-26 | 주성엔지니어링(주) | 액체운송장치의 가열을 위한 일체형 블록 히터 |
KR100455224B1 (ko) * | 2002-02-06 | 2004-11-06 | 주성엔지니어링(주) | 기화기 |
DE10211573A1 (de) * | 2002-03-15 | 2003-10-16 | Unaxis Balzers Ag | Vakuumverdampfungseinrichtung |
JP2003268552A (ja) * | 2002-03-18 | 2003-09-25 | Watanabe Shoko:Kk | 気化器及びそれを用いた各種装置並びに気化方法 |
US6758591B1 (en) | 2002-03-22 | 2004-07-06 | Novellus Systems, Inc. | Mixing of materials in an integrated circuit manufacturing equipment |
JP3822135B2 (ja) * | 2002-05-13 | 2006-09-13 | 日本パイオニクス株式会社 | 気化供給装置 |
US7192486B2 (en) * | 2002-08-15 | 2007-03-20 | Applied Materials, Inc. | Clog-resistant gas delivery system |
US20040163590A1 (en) * | 2003-02-24 | 2004-08-26 | Applied Materials, Inc. | In-situ health check of liquid injection vaporizer |
JP2005072195A (ja) * | 2003-08-22 | 2005-03-17 | Watanabe Shoko:Kk | 気化器用分散器、この気化器用分散器を用いたmocvd用気化器、及びキャリアガスの気化方法 |
US7608300B2 (en) * | 2003-08-27 | 2009-10-27 | Applied Materials, Inc. | Methods and devices to reduce defects in dielectric stack structures |
JP4607474B2 (ja) * | 2004-02-12 | 2011-01-05 | 東京エレクトロン株式会社 | 成膜装置 |
JP4601535B2 (ja) * | 2005-09-09 | 2010-12-22 | 株式会社リンテック | 低温度で液体原料を気化させることのできる気化器 |
WO2008030262A1 (en) * | 2005-12-29 | 2008-03-13 | 3M Innovative Properties Company | Method for atomizing material for coating processes |
KR100790408B1 (ko) * | 2006-08-03 | 2008-01-02 | 파이니스트 주식회사 | 기화장치 |
KR101490438B1 (ko) * | 2007-06-29 | 2015-02-11 | 주성엔지니어링(주) | 증착장비의 기화기 |
DE102007034205A1 (de) * | 2007-07-23 | 2009-01-29 | Krones Ag | Verdampfer zum Sterilisieren von Kunststoffbehältern |
KR101217518B1 (ko) * | 2008-03-27 | 2013-01-02 | (주)에이디에스 | 증착 원료 공급 장치 및 이를 구비하는 박막 증착 장치 |
KR101173645B1 (ko) * | 2007-12-31 | 2012-08-20 | (주)에이디에스 | 가스 분사 유닛 및 이를 구비하는 박막 증착 장치 |
JP5346532B2 (ja) * | 2008-09-29 | 2013-11-20 | 創研工業株式会社 | 気化器ユニット、これを用いる半導体処理システムおよび気化器に接続されるガス輸送管 |
US8590338B2 (en) * | 2009-12-31 | 2013-11-26 | Samsung Mobile Display Co., Ltd. | Evaporator with internal restriction |
TW201222630A (en) * | 2010-11-16 | 2012-06-01 | Ind Tech Res Inst | Film deposition system and method and gas supplying apparatus being used therein |
DE102011014311A1 (de) * | 2011-03-17 | 2012-09-20 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Verfahren und Vorrichtung zum Einbringen eines Prozessgases in einem Prozessraum einer Prozesskammer |
KR101351437B1 (ko) | 2012-07-12 | 2014-01-15 | (주)에이디에스 | 증착 원료 공급 장치 및 이를 구비하는 박막 증착 장치 |
US9562703B2 (en) * | 2012-08-03 | 2017-02-07 | Tom Richards, Inc. | In-line ultrapure heat exchanger |
CN102998012A (zh) * | 2012-11-30 | 2013-03-27 | 上海宏力半导体制造有限公司 | 管路监测装置 |
JP6078335B2 (ja) * | 2012-12-27 | 2017-02-08 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
CN105664798B (zh) * | 2016-02-26 | 2018-10-16 | 上海齐耀热能工程有限公司 | 雾化喷嘴 |
KR20240060875A (ko) * | 2018-09-03 | 2024-05-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 증착을 위한 직접 액체 주입 시스템 |
CN110142161B (zh) * | 2019-05-30 | 2023-03-28 | 上海理工大学 | 液态芳香烃化合物连续雾化及稳定发生装置及方法 |
CN110965046B (zh) * | 2019-12-31 | 2024-05-28 | 威海中玻新材料技术研发有限公司 | 超薄液膜旋离式汽化装置 |
CN113930737B (zh) * | 2020-06-29 | 2023-09-12 | 宝山钢铁股份有限公司 | 一种真空下金属蒸汽流量控制装置及其控制方法 |
US11996305B2 (en) | 2021-06-29 | 2024-05-28 | Applied Materials, Inc. | Selective oxidation on rapid thermal processing (RTP) chamber with active steam generation |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2644717A (en) * | 1949-11-11 | 1953-07-07 | Kopperschmidt Wilhelm | Spray device for liquids, thermoplastics, molten metal, or the like |
US3577165A (en) * | 1968-05-31 | 1971-05-04 | Perkin Elmer Corp | Linear scanning arrangement for a cycloidal mass spectrometer |
US4065057A (en) * | 1976-07-01 | 1977-12-27 | Durmann George J | Apparatus for spraying heat responsive materials |
US4349723A (en) * | 1980-04-04 | 1982-09-14 | The United States Of America As Represented By The Secretary Of The Navy | Electrically heated non-toxic smoke generator |
DE8406368U1 (de) * | 1984-03-01 | 1984-06-28 | Otto, Roland, 8752 Kleinostheim | Duesenelement |
JPH0784662B2 (ja) * | 1989-12-12 | 1995-09-13 | アプライドマテリアルズジャパン株式会社 | 化学的気相成長方法とその装置 |
US5173155A (en) * | 1990-09-28 | 1992-12-22 | Tokyo Gas Co., Ltd | Vacuum boiler type evaporator |
JPH06291040A (ja) * | 1992-03-03 | 1994-10-18 | Rintetsuku:Kk | 液体気化供給方法と液体気化供給器 |
US5230162A (en) * | 1992-06-26 | 1993-07-27 | Oyler Jr James R | Systems and methods for the deliquification of liquid-containing substances by flash sublimation |
ATE157887T1 (de) | 1993-03-06 | 1997-09-15 | Stephen James Rowland | Zerstäubung von flüssigkeiten |
US5849089A (en) * | 1997-03-14 | 1998-12-15 | Kabushiki Kaisha Toshiba | Evaporator for liquid raw material and evaporation method therefor |
US5882416A (en) | 1997-06-19 | 1999-03-16 | Advanced Technology Materials, Inc. | Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer |
JPH11111644A (ja) | 1997-09-30 | 1999-04-23 | Japan Pionics Co Ltd | 気化供給装置 |
KR100460746B1 (ko) * | 1999-04-13 | 2004-12-09 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속 배선 형성 방법 |
-
1998
- 1998-12-30 KR KR10-1998-0061355A patent/KR100368319B1/ko not_active IP Right Cessation
-
1999
- 1999-10-27 US US09/428,049 patent/US6349887B1/en not_active Expired - Lifetime
- 1999-10-28 GB GB9925485A patent/GB2345298B/en not_active Expired - Fee Related
- 1999-10-29 TW TW088118734A patent/TW414843B/zh not_active IP Right Cessation
- 1999-11-19 CN CNB991239660A patent/CN1139672C/zh not_active Expired - Fee Related
- 1999-11-24 DE DE19956472A patent/DE19956472B4/de not_active Expired - Fee Related
- 1999-12-10 JP JP35105399A patent/JP3831165B2/ja not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012203212A1 (de) * | 2012-03-01 | 2013-09-05 | Osram Opto Semiconductors Gmbh | Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses |
DE102012022744A1 (de) * | 2012-11-21 | 2014-05-22 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Vorrichtung zum Einstellen einer Gasphase in einer Reaktionskammer |
DE102012022744B4 (de) * | 2012-11-21 | 2016-11-24 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Vorrichtung zum Einstellen einer Gasphase in einer Reaktionskammer |
DE102016225257A1 (de) * | 2016-12-16 | 2018-06-21 | Robert Bosch Gmbh | Vorrichtung und Verfahren zum Verdampfen eines Ausgangsstoffs |
Also Published As
Publication number | Publication date |
---|---|
GB9925485D0 (en) | 1999-12-29 |
GB2345298A8 (en) | 2000-07-21 |
GB2345298A (en) | 2000-07-05 |
TW414843B (en) | 2000-12-11 |
GB2345298B (en) | 2003-12-10 |
CN1260407A (zh) | 2000-07-19 |
CN1139672C (zh) | 2004-02-25 |
US6349887B1 (en) | 2002-02-26 |
JP2000199066A (ja) | 2000-07-18 |
KR20000044852A (ko) | 2000-07-15 |
JP3831165B2 (ja) | 2006-10-11 |
DE19956472B4 (de) | 2011-09-29 |
KR100368319B1 (ko) | 2003-03-17 |
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Legal Events
Date | Code | Title | Description |
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8110 | Request for examination paragraph 44 | ||
8128 | New person/name/address of the agent |
Representative=s name: HOEFER & PARTNER, 81543 MUENCHEN |
|
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final |
Effective date: 20111230 |
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R081 | Change of applicant/patentee |
Owner name: INTELLECTUAL DISCOVERY CO., LTD., KR Free format text: FORMER OWNER: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., ICHON, KR Effective date: 20140220 Owner name: INTELLECTUAL DISCOVERY CO., LTD., KR Free format text: FORMER OWNER: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., ICHON, KYONGGI, KR Effective date: 20140220 |
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Representative=s name: HOEFER & PARTNER, DE Effective date: 20140220 Representative=s name: HOEFER & PARTNER PATENTANWAELTE MBB, DE Effective date: 20140220 |
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R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |