CN1260407A - 液体输送*** - Google Patents
液体输送*** Download PDFInfo
- Publication number
- CN1260407A CN1260407A CN99123966A CN99123966A CN1260407A CN 1260407 A CN1260407 A CN 1260407A CN 99123966 A CN99123966 A CN 99123966A CN 99123966 A CN99123966 A CN 99123966A CN 1260407 A CN1260407 A CN 1260407A
- Authority
- CN
- China
- Prior art keywords
- copper
- conveying system
- carrier gas
- liquid conveying
- vaporizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052802 copper Inorganic materials 0.000 claims abstract description 83
- 239000010949 copper Substances 0.000 claims abstract description 83
- 239000012159 carrier gas Substances 0.000 claims abstract description 34
- 239000006200 vaporizer Substances 0.000 claims abstract description 32
- 239000011344 liquid material Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 30
- 230000008016 vaporization Effects 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 238000009834 vaporization Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000006227 byproduct Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 14
- 238000000151 deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 239000004568 cement Substances 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001802 infusion Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0061355A KR100368319B1 (ko) | 1998-12-30 | 1998-12-30 | 액체운송장치 |
KR61355/1998 | 1998-12-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1260407A true CN1260407A (zh) | 2000-07-19 |
CN1139672C CN1139672C (zh) | 2004-02-25 |
Family
ID=19568107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991239660A Expired - Fee Related CN1139672C (zh) | 1998-12-30 | 1999-11-19 | 液体输送*** |
Country Status (7)
Country | Link |
---|---|
US (1) | US6349887B1 (zh) |
JP (1) | JP3831165B2 (zh) |
KR (1) | KR100368319B1 (zh) |
CN (1) | CN1139672C (zh) |
DE (1) | DE19956472B4 (zh) |
GB (1) | GB2345298B (zh) |
TW (1) | TW414843B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102465281A (zh) * | 2010-11-16 | 2012-05-23 | 财团法人工业技术研究院 | 镀膜***与方法及其所使用的供气装置 |
CN101351868B (zh) * | 2005-12-29 | 2013-03-13 | 3M创新有限公司 | 使用涂覆工艺雾化材料的方法 |
CN102998012A (zh) * | 2012-11-30 | 2013-03-27 | 上海宏力半导体制造有限公司 | 管路监测装置 |
CN101481797B (zh) * | 2007-12-31 | 2013-10-16 | 周星工程股份有限公司 | 气体注入单元和具有气体注入单元的薄膜沉积设备 |
CN110142161A (zh) * | 2019-05-30 | 2019-08-20 | 上海理工大学 | 液态芳香烃化合物连续雾化及稳定发生装置及方法 |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100649852B1 (ko) * | 1999-09-09 | 2006-11-24 | 동경 엘렉트론 주식회사 | 기화기 및 이것을 이용한 반도체 제조 시스템 |
KR100338112B1 (ko) * | 1999-12-22 | 2002-05-24 | 박종섭 | 반도체 소자의 구리 금속 배선 형성 방법 |
US6596085B1 (en) | 2000-02-01 | 2003-07-22 | Applied Materials, Inc. | Methods and apparatus for improved vaporization of deposition material in a substrate processing system |
US7163197B2 (en) * | 2000-09-26 | 2007-01-16 | Shimadzu Corporation | Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method |
US7083115B2 (en) * | 2001-10-04 | 2006-08-01 | Spraying Systems Co. | Spray gun with removable heat jacket |
KR100454292B1 (ko) * | 2002-01-07 | 2004-10-26 | 주성엔지니어링(주) | 액체운송장치의 가열을 위한 일체형 블록 히터 |
KR100455224B1 (ko) * | 2002-02-06 | 2004-11-06 | 주성엔지니어링(주) | 기화기 |
DE10211573A1 (de) * | 2002-03-15 | 2003-10-16 | Unaxis Balzers Ag | Vakuumverdampfungseinrichtung |
JP2003268552A (ja) * | 2002-03-18 | 2003-09-25 | Watanabe Shoko:Kk | 気化器及びそれを用いた各種装置並びに気化方法 |
US6758591B1 (en) | 2002-03-22 | 2004-07-06 | Novellus Systems, Inc. | Mixing of materials in an integrated circuit manufacturing equipment |
JP3822135B2 (ja) * | 2002-05-13 | 2006-09-13 | 日本パイオニクス株式会社 | 気化供給装置 |
US7192486B2 (en) * | 2002-08-15 | 2007-03-20 | Applied Materials, Inc. | Clog-resistant gas delivery system |
US20040163590A1 (en) * | 2003-02-24 | 2004-08-26 | Applied Materials, Inc. | In-situ health check of liquid injection vaporizer |
JP2005072195A (ja) * | 2003-08-22 | 2005-03-17 | Watanabe Shoko:Kk | 気化器用分散器、この気化器用分散器を用いたmocvd用気化器、及びキャリアガスの気化方法 |
US7608300B2 (en) * | 2003-08-27 | 2009-10-27 | Applied Materials, Inc. | Methods and devices to reduce defects in dielectric stack structures |
JP4607474B2 (ja) * | 2004-02-12 | 2011-01-05 | 東京エレクトロン株式会社 | 成膜装置 |
JP4601535B2 (ja) * | 2005-09-09 | 2010-12-22 | 株式会社リンテック | 低温度で液体原料を気化させることのできる気化器 |
KR100790408B1 (ko) * | 2006-08-03 | 2008-01-02 | 파이니스트 주식회사 | 기화장치 |
KR101490438B1 (ko) * | 2007-06-29 | 2015-02-11 | 주성엔지니어링(주) | 증착장비의 기화기 |
DE102007034205A1 (de) * | 2007-07-23 | 2009-01-29 | Krones Ag | Verdampfer zum Sterilisieren von Kunststoffbehältern |
KR101217518B1 (ko) * | 2008-03-27 | 2013-01-02 | (주)에이디에스 | 증착 원료 공급 장치 및 이를 구비하는 박막 증착 장치 |
JP5346532B2 (ja) * | 2008-09-29 | 2013-11-20 | 創研工業株式会社 | 気化器ユニット、これを用いる半導体処理システムおよび気化器に接続されるガス輸送管 |
US8590338B2 (en) * | 2009-12-31 | 2013-11-26 | Samsung Mobile Display Co., Ltd. | Evaporator with internal restriction |
DE102011014311A1 (de) * | 2011-03-17 | 2012-09-20 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Verfahren und Vorrichtung zum Einbringen eines Prozessgases in einem Prozessraum einer Prozesskammer |
DE102012203212A1 (de) * | 2012-03-01 | 2013-09-05 | Osram Opto Semiconductors Gmbh | Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses |
KR101351437B1 (ko) | 2012-07-12 | 2014-01-15 | (주)에이디에스 | 증착 원료 공급 장치 및 이를 구비하는 박막 증착 장치 |
US9562703B2 (en) * | 2012-08-03 | 2017-02-07 | Tom Richards, Inc. | In-line ultrapure heat exchanger |
DE102012022744B4 (de) * | 2012-11-21 | 2016-11-24 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Vorrichtung zum Einstellen einer Gasphase in einer Reaktionskammer |
JP6078335B2 (ja) * | 2012-12-27 | 2017-02-08 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
CN105664798B (zh) * | 2016-02-26 | 2018-10-16 | 上海齐耀热能工程有限公司 | 雾化喷嘴 |
DE102016225257A1 (de) * | 2016-12-16 | 2018-06-21 | Robert Bosch Gmbh | Vorrichtung und Verfahren zum Verdampfen eines Ausgangsstoffs |
KR20240060875A (ko) * | 2018-09-03 | 2024-05-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 증착을 위한 직접 액체 주입 시스템 |
CN110965046B (zh) * | 2019-12-31 | 2024-05-28 | 威海中玻新材料技术研发有限公司 | 超薄液膜旋离式汽化装置 |
CN113930737B (zh) * | 2020-06-29 | 2023-09-12 | 宝山钢铁股份有限公司 | 一种真空下金属蒸汽流量控制装置及其控制方法 |
US11996305B2 (en) | 2021-06-29 | 2024-05-28 | Applied Materials, Inc. | Selective oxidation on rapid thermal processing (RTP) chamber with active steam generation |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2644717A (en) * | 1949-11-11 | 1953-07-07 | Kopperschmidt Wilhelm | Spray device for liquids, thermoplastics, molten metal, or the like |
US3577165A (en) * | 1968-05-31 | 1971-05-04 | Perkin Elmer Corp | Linear scanning arrangement for a cycloidal mass spectrometer |
US4065057A (en) * | 1976-07-01 | 1977-12-27 | Durmann George J | Apparatus for spraying heat responsive materials |
US4349723A (en) * | 1980-04-04 | 1982-09-14 | The United States Of America As Represented By The Secretary Of The Navy | Electrically heated non-toxic smoke generator |
DE8406368U1 (de) * | 1984-03-01 | 1984-06-28 | Otto, Roland, 8752 Kleinostheim | Duesenelement |
JPH0784662B2 (ja) * | 1989-12-12 | 1995-09-13 | アプライドマテリアルズジャパン株式会社 | 化学的気相成長方法とその装置 |
US5173155A (en) * | 1990-09-28 | 1992-12-22 | Tokyo Gas Co., Ltd | Vacuum boiler type evaporator |
JPH06291040A (ja) * | 1992-03-03 | 1994-10-18 | Rintetsuku:Kk | 液体気化供給方法と液体気化供給器 |
US5230162A (en) * | 1992-06-26 | 1993-07-27 | Oyler Jr James R | Systems and methods for the deliquification of liquid-containing substances by flash sublimation |
ATE157887T1 (de) | 1993-03-06 | 1997-09-15 | Stephen James Rowland | Zerstäubung von flüssigkeiten |
US5849089A (en) * | 1997-03-14 | 1998-12-15 | Kabushiki Kaisha Toshiba | Evaporator for liquid raw material and evaporation method therefor |
US5882416A (en) | 1997-06-19 | 1999-03-16 | Advanced Technology Materials, Inc. | Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer |
JPH11111644A (ja) | 1997-09-30 | 1999-04-23 | Japan Pionics Co Ltd | 気化供給装置 |
KR100460746B1 (ko) * | 1999-04-13 | 2004-12-09 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속 배선 형성 방법 |
-
1998
- 1998-12-30 KR KR10-1998-0061355A patent/KR100368319B1/ko not_active IP Right Cessation
-
1999
- 1999-10-27 US US09/428,049 patent/US6349887B1/en not_active Expired - Lifetime
- 1999-10-28 GB GB9925485A patent/GB2345298B/en not_active Expired - Fee Related
- 1999-10-29 TW TW088118734A patent/TW414843B/zh not_active IP Right Cessation
- 1999-11-19 CN CNB991239660A patent/CN1139672C/zh not_active Expired - Fee Related
- 1999-11-24 DE DE19956472A patent/DE19956472B4/de not_active Expired - Fee Related
- 1999-12-10 JP JP35105399A patent/JP3831165B2/ja not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101351868B (zh) * | 2005-12-29 | 2013-03-13 | 3M创新有限公司 | 使用涂覆工艺雾化材料的方法 |
CN101481797B (zh) * | 2007-12-31 | 2013-10-16 | 周星工程股份有限公司 | 气体注入单元和具有气体注入单元的薄膜沉积设备 |
CN102465281A (zh) * | 2010-11-16 | 2012-05-23 | 财团法人工业技术研究院 | 镀膜***与方法及其所使用的供气装置 |
CN102998012A (zh) * | 2012-11-30 | 2013-03-27 | 上海宏力半导体制造有限公司 | 管路监测装置 |
CN110142161A (zh) * | 2019-05-30 | 2019-08-20 | 上海理工大学 | 液态芳香烃化合物连续雾化及稳定发生装置及方法 |
Also Published As
Publication number | Publication date |
---|---|
GB9925485D0 (en) | 1999-12-29 |
GB2345298A8 (en) | 2000-07-21 |
GB2345298A (en) | 2000-07-05 |
TW414843B (en) | 2000-12-11 |
GB2345298B (en) | 2003-12-10 |
CN1139672C (zh) | 2004-02-25 |
US6349887B1 (en) | 2002-02-26 |
DE19956472A1 (de) | 2000-07-06 |
JP2000199066A (ja) | 2000-07-18 |
KR20000044852A (ko) | 2000-07-15 |
JP3831165B2 (ja) | 2006-10-11 |
DE19956472B4 (de) | 2011-09-29 |
KR100368319B1 (ko) | 2003-03-17 |
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Legal Events
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SE01 | Entry into force of request for substantive examination | ||
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GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: YINGDI CO., LTD. Free format text: FORMER OWNER: SK HYNIX INC. Effective date: 20140331 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: SK HYNIX INC. Free format text: FORMER NAME: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Gyeonggi Do, South Korea Patentee after: Sk Hynix Inc. Address before: Gyeonggi Do, South Korea Patentee before: Hyundai Electronics Industries Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20140331 Address after: Seoul, South Kerean Patentee after: INTELLECTUAL DISCOVERY Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Sk Hynix Inc. |
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CF01 | Termination of patent right due to non-payment of annual fee |
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CF01 | Termination of patent right due to non-payment of annual fee |