DE19812558B4 - Device for generating linearly extended ECR plasmas - Google Patents
Device for generating linearly extended ECR plasmas Download PDFInfo
- Publication number
- DE19812558B4 DE19812558B4 DE1998112558 DE19812558A DE19812558B4 DE 19812558 B4 DE19812558 B4 DE 19812558B4 DE 1998112558 DE1998112558 DE 1998112558 DE 19812558 A DE19812558 A DE 19812558A DE 19812558 B4 DE19812558 B4 DE 19812558B4
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- waveguide
- inner conductor
- protective tube
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Abstract
Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen mit einem linear ausgedehnten Innenleiter (2), der von einem Schutzrohr (3) umgeben ist und an dem die zur Plasmaerzeugung benötigte HF-Leistung einseitig oder beidseitig an den Enden eingekoppelt werden kann, sowie einer zum Innenleiter (2) parallelen Multipol-Magnetanordnung (4), dadurch gekennzeichnet, daß koaxial zum Innenleiter (2) und zum Schutzrohr (3) in einem Abstand R ein Wellenleiter vorgesehen ist, derart daß in einem Plasmaraum (1) zwischen dem Schutzrohr (3) und dem Wellenleiter ein Plasma ausgebildet wird, daß der Wellenleiter parallel zum Innenleiter (2) einen Spalt S aufweist und daß die Multipol-Magnetanordnung (4) derart am Wellenleiter angeordnet ist, daß am Spalt S ein magnetisches Feld ausgebildet wird.Device for generating linearly extended ECR plasmas with a linearly extended inner conductor (2), which is surrounded by a protective tube (3) and at which the RF power required for plasma generation can be coupled on one side or both sides at the ends, and one to the inner conductor (2) parallel multipole magnet arrangement (4), characterized in that coaxial to the inner conductor (2) and to the protective tube (3) at a distance R, a waveguide is provided such that in a plasma chamber (1) between the protective tube (3) and a plasma is formed on the waveguide, that the waveguide parallel to the inner conductor (2) has a gap S and that the multipole magnet assembly (4) is arranged on the waveguide, that at the gap S, a magnetic field is formed.
Description
Die Erfindung stellt eine Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen bestehend aus der Kombination eines Doppelkoaxialleiters und einer linearen Multipol-Magnetanordnung dar. Sie ist dadurch gekennzeichnet, daß der Plasmaraum Teil des äußeren Koaxialleiters ist und das erzeugte Plasma längs dieses Koaxialleiters die fehlende Wand des Koaxialleiters ergänzt.The The invention provides a device for generating linearly extended ECR plasmas consisting of the combination of a double coaxial conductor and a linear multipole magnet arrangement It is characterized in that the plasma space is part of the outer coaxial conductor is and the generated plasma along this coaxial conductor complements the missing wall of the coaxial conductor.
Die
Bei
der Erfindung
Das
Patent
In
der Erfindung
Die
Erfindung
Zur Erzeugung linear ausgedehnter ECR-Plasmen einer Länge L mit der Dimension von ca. 1 m oder darüber werden zur Erreichung hoher Plasmadichten große HF-Leistungen zur Speisung des Plasmagebietes benötigt. Bei Anordnungen mit Koppelfenster kommt es vor, daß besonders bei Drücken um 0,01 mbar und darüber das Plasma spontan am Einkoppelfenster gezündet wird. Die Belastung des Koppelfensters ist dann besonders hoch und führt oft zur thermischen Überlastung. Anordnungen zur Erzeugung von ECR-Plasmen arbeiten deshalb normalerweise im Druckbereich unterhalb von 0,01 mbar. Damit werden die Belastungsprobleme der Koppelfenster verringert, aber der Einsatzdruckbereich zu höheren Drücken eingeschränkt.to Generation of linearly extended ECR plasmas of length L with The dimension of about 1 m or more will help achieve high plasma densities size RF power needed to power the plasma area. at Arrangements with coupling window, it happens that especially at pressures to 0.01 mbar and above the plasma is ignited spontaneously at the coupling window. The burden of Coupling window is then particularly high and often leads to thermal overload. Arrangements for producing ECR plasmas therefore normally work in the pressure range below 0.01 mbar. This will be the stress problems the coupling window is reduced but the feed pressure range is restricted to higher pressures.
Eine weitere wichtige Voraussetzung zum Betrieb lang gestreckter Plasmaanordnungen ist die homogene Bereitstellung der HF-Leistung in das Plasmagebiet. Gelöst wird dieses Problem in anderen Erfindungen meist durch Mehrfacheinkopplungen. Es werden Hohlleiteranordnungen und Vorrichtungen mit Schlitzantennen, Stromschleifenantennen oder Stabantennen oder deren Kombination verwendet. Durch spontane Dichteschwankungen und damit Anpassungsänderungen im Plasma kommt es häufig zur lokalen Überlastung der Antennen bzw. der Koppelfenster. Der langzeitig stabile Einsatz derartiger Vorrichtung ist deshalb problematisch.A Another important requirement for the operation of elongated plasma arrays is the homogeneous provision of RF power in the plasma environment. Solved In other inventions this problem is usually caused by multiple couplings. There are waveguide assemblies and devices with slot antennas, Current loop antennas or rod antennas or their combination used. By spontaneous density fluctuations and thus adaptation changes in plasma it often happens local overload the antennas or the coupling window. The long-term stable use such device is therefore problematic.
Die
hier vorgestellte Vorrichtung löst
die oben aufgeführten
Probleme dadurch, daß eine
Doppelkoaxialleiteranordnung verwendet wird. Die Anordnung besteht
im wesentlichen aus einem Plasmaraum (
Wird
der Durchmesser 2R des äußeren Koaxialleiters
vergrößert, so
wird der koaxiale Außenleiter
schließlich
zum Rundhohlleiter (ca. 90 mm und größer bei einer Frequenz von
2,45 GHz). Die
Wird
der Spalt (
Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung dargestellt und wird im folgenden näher beschrieben.One embodiment The invention is illustrated in the drawing and will be described below described in more detail.
Ausführungsbeispielembodiment
Die
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1998112558 DE19812558B4 (en) | 1998-03-21 | 1998-03-21 | Device for generating linearly extended ECR plasmas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1998112558 DE19812558B4 (en) | 1998-03-21 | 1998-03-21 | Device for generating linearly extended ECR plasmas |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19812558A1 DE19812558A1 (en) | 1999-09-30 |
DE19812558B4 true DE19812558B4 (en) | 2010-09-23 |
Family
ID=7861881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1998112558 Expired - Lifetime DE19812558B4 (en) | 1998-03-21 | 1998-03-21 | Device for generating linearly extended ECR plasmas |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE19812558B4 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015115329A1 (en) | 2015-09-11 | 2017-03-16 | Hanwha Q Cells Gmbh | Method for the plasma-assisted deposition of aluminum oxide thin films on semiconductor wafers for the production of wafer solar cells and inline PECVD system |
DE102018113444B3 (en) | 2018-06-06 | 2019-10-10 | Meyer Burger (Germany) Gmbh | Linear microwave plasma source with separate plasma spaces |
DE102018113443A1 (en) | 2018-06-06 | 2019-12-12 | Meyer Burger (Germany) Gmbh | Plasma treatment apparatus with a linear microwave plasma source and a gas guiding device |
WO2023128764A1 (en) | 2021-12-30 | 2023-07-06 | Leydenjar Technologies B.V | Plasma-enhanced chemical vapour deposition apparatus |
WO2023172141A1 (en) | 2022-03-11 | 2023-09-14 | Leydenjar Technologies B.V. | Apparatus and method for plasma enhanced chemical vapour deposition |
WO2023172140A1 (en) | 2022-03-11 | 2023-09-14 | Leydenjar Technologies B.V. | Apparatus and method for plasma enhanced chemical vapour deposition |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19925493C1 (en) * | 1999-06-04 | 2001-01-18 | Fraunhofer Ges Forschung | Linearly extended arrangement for large-area microwave treatment and for large-area plasma generation |
NL1020634C2 (en) | 2002-05-21 | 2003-11-24 | Otb Group Bv | Method for passivating a semiconductor substrate. |
DE10341239B4 (en) * | 2003-09-08 | 2006-05-24 | Roth & Rau Ag | ECR plasma source with linear plasma outlet |
DE102006048815B4 (en) * | 2006-10-16 | 2016-03-17 | Iplas Innovative Plasma Systems Gmbh | Apparatus and method for generating high power microwave plasmas |
DE102006048816A1 (en) * | 2006-10-16 | 2008-04-17 | Iplas Innovative Plasma Systems Gmbh | Apparatus and method for local generation of microwave plasmas |
TW200926908A (en) | 2007-12-13 | 2009-06-16 | Ind Tech Res Inst | Microwave-excited plasma procwssing apparatus using linear microwave plasma source excited by ridged wave-guide plasma reactors |
US20110076420A1 (en) * | 2008-01-30 | 2011-03-31 | Applied Materials, Inc. | High efficiency low energy microwave ion/electron source |
US7993733B2 (en) | 2008-02-20 | 2011-08-09 | Applied Materials, Inc. | Index modified coating on polymer substrate |
TW201026162A (en) | 2008-12-25 | 2010-07-01 | Ind Tech Res Inst | A long linear-type microwave plasma source using variably-reduced-height rectangular waveguide as the plasma reactor |
DE102009057375B3 (en) * | 2009-12-09 | 2011-05-26 | Roth & Rau Ag | ECR plasma source with a coating protection and application of the coating protection |
TW201141316A (en) | 2010-05-04 | 2011-11-16 | Ind Tech Res Inst | A linear-type microwave plasma source using rectangular waveguide with a biased slot as the plasma reactor |
DE202011100570U1 (en) | 2010-05-27 | 2011-07-28 | Roth & Rau Ag | Coating protection for protective tubes on microwave antennas |
FR2995493B1 (en) | 2012-09-11 | 2014-08-22 | Hydromecanique & Frottement | DEVICE FOR GENERATING A PLASMA HAVING A SIGNIFICANT EXTEND ALONG AN AXIS BY ELECTRONIC CYCLOTRONIC RESONANCE RCE FROM A GASEOUS MEDIUM |
EP3309815B1 (en) | 2016-10-12 | 2019-03-20 | Meyer Burger (Germany) AG | Plasma treatment device with two microwave plasma sources coupled together and method for operating such a plasma treatment device |
DE102018110392A1 (en) | 2018-04-30 | 2019-10-31 | Meyer Burger (Germany) Gmbh | Vacuum flow system with high throughput |
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DE3905303A1 (en) * | 1988-02-24 | 1989-08-31 | Hitachi Ltd | DEVICE FOR GENERATING A PLASMA BY MICROWAVE |
DE3923390A1 (en) * | 1988-07-14 | 1990-01-25 | Canon Kk | DEVICE FOR FORMING A LARGE Vaporized VAPOR FILM USING AT LEAST TWO SEPARATELY DETERMINED ACTIVATED GASES |
EP0411317A2 (en) * | 1989-06-28 | 1991-02-06 | Canon Kabushiki Kaisha | Method and apparatus for continuously forming functional deposited films with a large area by microwave plasma CVD |
EP0486943A1 (en) * | 1990-11-22 | 1992-05-27 | Leybold Aktiengesellschaft | Device for the excitation of a uniform microwave field |
EP0279895B1 (en) * | 1987-02-21 | 1993-05-05 | Leybold Aktiengesellschaft | Device for producing a plasma and for treating substrates in said plasma |
DE4136297A1 (en) * | 1991-11-04 | 1993-05-06 | Plasma Electronic Gmbh, 7024 Filderstadt, De | Localised plasma prodn. in treatment chamber - using microwave generator connected to coupling device which passes through the wall of the chamber without using a coupling window |
EP0613329A1 (en) * | 1993-02-25 | 1994-08-31 | METAL PROCESS, Société à Responsabilité Limiteé: | Device for the ECR plasma heating by means of a wire applicatior of a microwave field and a static magnetic field |
DE19722272A1 (en) * | 1997-05-28 | 1998-12-03 | Leybold Systems Gmbh | Device for generating plasma |
Family Cites Families (1)
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DE19503205C1 (en) * | 1995-02-02 | 1996-07-11 | Muegge Electronic Gmbh | Device for generating a plasma in low pressure container e.g. for hardware items surface treatment by plasma etching and plasma deposition |
-
1998
- 1998-03-21 DE DE1998112558 patent/DE19812558B4/en not_active Expired - Lifetime
Patent Citations (8)
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EP0279895B1 (en) * | 1987-02-21 | 1993-05-05 | Leybold Aktiengesellschaft | Device for producing a plasma and for treating substrates in said plasma |
DE3905303A1 (en) * | 1988-02-24 | 1989-08-31 | Hitachi Ltd | DEVICE FOR GENERATING A PLASMA BY MICROWAVE |
DE3923390A1 (en) * | 1988-07-14 | 1990-01-25 | Canon Kk | DEVICE FOR FORMING A LARGE Vaporized VAPOR FILM USING AT LEAST TWO SEPARATELY DETERMINED ACTIVATED GASES |
EP0411317A2 (en) * | 1989-06-28 | 1991-02-06 | Canon Kabushiki Kaisha | Method and apparatus for continuously forming functional deposited films with a large area by microwave plasma CVD |
EP0486943A1 (en) * | 1990-11-22 | 1992-05-27 | Leybold Aktiengesellschaft | Device for the excitation of a uniform microwave field |
DE4136297A1 (en) * | 1991-11-04 | 1993-05-06 | Plasma Electronic Gmbh, 7024 Filderstadt, De | Localised plasma prodn. in treatment chamber - using microwave generator connected to coupling device which passes through the wall of the chamber without using a coupling window |
EP0613329A1 (en) * | 1993-02-25 | 1994-08-31 | METAL PROCESS, Société à Responsabilité Limiteé: | Device for the ECR plasma heating by means of a wire applicatior of a microwave field and a static magnetic field |
DE19722272A1 (en) * | 1997-05-28 | 1998-12-03 | Leybold Systems Gmbh | Device for generating plasma |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015115329A1 (en) | 2015-09-11 | 2017-03-16 | Hanwha Q Cells Gmbh | Method for the plasma-assisted deposition of aluminum oxide thin films on semiconductor wafers for the production of wafer solar cells and inline PECVD system |
WO2017041784A2 (en) | 2015-09-11 | 2017-03-16 | Hanwha Q Cells Gmbh | Method for plasma-enhanced deposition of thin aluminum oxide layers on semiconductor wafers for manufacturing wafer solar cells, and in-line pecvd plant |
WO2017041784A3 (en) * | 2015-09-11 | 2017-05-04 | Hanwha Q Cells Gmbh | Method for depositing thin aluminum oxide layers, and in-line pecvd plant |
DE102018113444B3 (en) | 2018-06-06 | 2019-10-10 | Meyer Burger (Germany) Gmbh | Linear microwave plasma source with separate plasma spaces |
WO2019233750A1 (en) | 2018-06-06 | 2019-12-12 | Meyer Burger (Germany) Gmbh | Linear microwave plasma source having separated plasma chambers |
DE102018113443A1 (en) | 2018-06-06 | 2019-12-12 | Meyer Burger (Germany) Gmbh | Plasma treatment apparatus with a linear microwave plasma source and a gas guiding device |
WO2019233703A1 (en) | 2018-06-06 | 2019-12-12 | Meyer Burger (Germany) Gmbh | Plasma treatment device having a linear microwave plasma source and having a gas-conducting device |
WO2023128764A1 (en) | 2021-12-30 | 2023-07-06 | Leydenjar Technologies B.V | Plasma-enhanced chemical vapour deposition apparatus |
WO2023172141A1 (en) | 2022-03-11 | 2023-09-14 | Leydenjar Technologies B.V. | Apparatus and method for plasma enhanced chemical vapour deposition |
WO2023172140A1 (en) | 2022-03-11 | 2023-09-14 | Leydenjar Technologies B.V. | Apparatus and method for plasma enhanced chemical vapour deposition |
NL2031258B1 (en) | 2022-03-11 | 2023-09-19 | Leydenjar Tech B V | Apparatus and method for plasma enhanced chemical vapour deposition |
NL2031257B1 (en) | 2022-03-11 | 2023-09-20 | Leydenjar Tech B V | Apparatus and method for plasma enhanced chemical vapour deposition |
Also Published As
Publication number | Publication date |
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DE19812558A1 (en) | 1999-09-30 |
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8170 | Reinstatement of the former position | ||
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Owner name: ROTH & RAU AG, 09337 HOHENSTEIN-ERNSTTHAL, DE |
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Representative=s name: KAILUWEIT & UHLEMANN, PATENTANWAELTE, 01187 DRESDE Representative=s name: KAILUWEIT & UHLEMANN, PATENTANWAELTE, DE Representative=s name: KAILUWEIT & UHLEMANN PATENTANWAELTE PARTNERSCH, DE |
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Owner name: MEYER BURGER (GERMANY) AG, DE Free format text: FORMER OWNER: ROTH & RAU AG, 09337 HOHENSTEIN-ERNSTTHAL, DE |
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