DE1639146B2 - Verfahren zur herstellung einer elektrolumineszenten halbleiterdiode mit p-n-uebergang - Google Patents

Verfahren zur herstellung einer elektrolumineszenten halbleiterdiode mit p-n-uebergang

Info

Publication number
DE1639146B2
DE1639146B2 DE19681639146 DE1639146A DE1639146B2 DE 1639146 B2 DE1639146 B2 DE 1639146B2 DE 19681639146 DE19681639146 DE 19681639146 DE 1639146 A DE1639146 A DE 1639146A DE 1639146 B2 DE1639146 B2 DE 1639146B2
Authority
DE
Germany
Prior art keywords
transition
manufacturing
semiconductor diode
electroluminescent semiconductor
electroluminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19681639146
Other languages
English (en)
Other versions
DE1639146C3 (de
DE1639146A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE1639146A1 publication Critical patent/DE1639146A1/de
Publication of DE1639146B2 publication Critical patent/DE1639146B2/de
Application granted granted Critical
Publication of DE1639146C3 publication Critical patent/DE1639146C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE1639146A 1967-02-17 1968-02-15 Verfahren zur Herstellung einer elektrolumineszenten Halbleiterdiode mit p-n-Übergang Expired DE1639146C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61696667A 1967-02-17 1967-02-17

Publications (3)

Publication Number Publication Date
DE1639146A1 DE1639146A1 (de) 1972-03-02
DE1639146B2 true DE1639146B2 (de) 1972-11-30
DE1639146C3 DE1639146C3 (de) 1974-08-22

Family

ID=24471723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1639146A Expired DE1639146C3 (de) 1967-02-17 1968-02-15 Verfahren zur Herstellung einer elektrolumineszenten Halbleiterdiode mit p-n-Übergang

Country Status (7)

Country Link
US (1) US3470038A (de)
BE (1) BE710310A (de)
DE (1) DE1639146C3 (de)
FR (1) FR1552749A (de)
GB (1) GB1213017A (de)
NL (1) NL150272B (de)
SE (1) SE337257B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3540941A (en) * 1967-12-01 1970-11-17 Ibm Method of heat treating semiconductor electroluminescent devices
US3619304A (en) * 1968-08-30 1971-11-09 Tokyo Shibaura Electric Co Method of manufacturing gallium phosphide electro luminescent diodes
BE754437A (fr) * 1969-08-08 1971-01-18 Western Electric Co Dispositif electroluminescent ameliore
US3603833A (en) * 1970-02-16 1971-09-07 Bell Telephone Labor Inc Electroluminescent junction semiconductor with controllable combination colors
US3751309A (en) * 1971-03-29 1973-08-07 Bell Telephone Labor Inc The use of a glass dopant for gap and electroluminescent diodes produced thereby
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US7204050B2 (en) * 2003-12-29 2007-04-17 Sargent Manufacturing Company Exit device with lighted touchpad

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251614A (de) * 1959-05-28 1900-01-01
US3411946A (en) * 1963-09-05 1968-11-19 Raytheon Co Process and apparatus for producing an intermetallic compound
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt

Also Published As

Publication number Publication date
US3470038A (en) 1969-09-30
BE710310A (de) 1968-06-17
DE1639146C3 (de) 1974-08-22
FR1552749A (de) 1969-01-03
GB1213017A (en) 1970-11-18
SE337257B (de) 1971-08-02
NL150272B (nl) 1976-07-15
NL6801530A (de) 1968-08-19
DE1639146A1 (de) 1972-03-02

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee