AT303815B - Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Feldeffekttransistor - Google Patents
Verfahren zur Herstellung einer Halbleitervorrichtung mit einem FeldeffekttransistorInfo
- Publication number
- AT303815B AT303815B AT623168A AT623168A AT303815B AT 303815 B AT303815 B AT 303815B AT 623168 A AT623168 A AT 623168A AT 623168 A AT623168 A AT 623168A AT 303815 B AT303815 B AT 303815B
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- semiconductor device
- field effect
- effect transistor
- transistor
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR112635 | 1967-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
AT303815B true AT303815B (de) | 1972-12-11 |
Family
ID=8634222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT623168A AT303815B (de) | 1967-06-30 | 1968-06-28 | Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Feldeffekttransistor |
Country Status (9)
Country | Link |
---|---|
US (1) | US3595715A (de) |
AT (1) | AT303815B (de) |
BE (1) | BE717388A (de) |
DK (1) | DK117847B (de) |
ES (1) | ES355600A1 (de) |
FR (1) | FR1559609A (de) |
GB (1) | GB1225504A (de) |
NL (1) | NL6808887A (de) |
SE (1) | SE331515B (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3895978A (en) * | 1969-08-12 | 1975-07-22 | Kogyo Gijutsuin | Method of manufacturing transistors |
BE756061A (fr) * | 1969-09-11 | 1971-03-11 | Philips Nv | Dispositif semi-conducteur |
BE758683A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle |
US4069494A (en) * | 1973-02-17 | 1978-01-17 | Ferranti Limited | Inverter circuit arrangements |
US3895392A (en) * | 1973-04-05 | 1975-07-15 | Signetics Corp | Bipolar transistor structure having ion implanted region and method |
GB1471617A (en) * | 1973-06-21 | 1977-04-27 | Sony Corp | Circuits comprising a semiconductor device |
GB2023340B (en) * | 1978-06-01 | 1982-09-02 | Mitsubishi Electric Corp | Integrated circuits |
US4314267A (en) * | 1978-06-13 | 1982-02-02 | Ibm Corporation | Dense high performance JFET compatible with NPN transistor formation and merged BIFET |
US4311532A (en) * | 1979-07-27 | 1982-01-19 | Harris Corporation | Method of making junction isolated bipolar device in unisolated IGFET IC |
JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
JPS6170758A (ja) * | 1984-09-06 | 1986-04-11 | シーメンス、アクチエンゲゼルシヤフト | トランジスタ構造 |
US4808547A (en) * | 1986-07-07 | 1989-02-28 | Harris Corporation | Method of fabrication of high voltage IC bopolar transistors operable to BVCBO |
US4939099A (en) * | 1988-06-21 | 1990-07-03 | Texas Instruments Incorporated | Process for fabricating isolated vertical bipolar and JFET transistors |
DE68928763T2 (de) * | 1988-06-27 | 1999-04-08 | Texas Instruments Inc., Dallas, Tex. | Verfahren zur Herstellung von isolierten vertikalbipolaren und JFET-Transistoren und entsprechender IC |
-
1967
- 1967-06-30 FR FR112635A patent/FR1559609A/fr not_active Expired
-
1968
- 1968-06-25 NL NL6808887A patent/NL6808887A/xx unknown
- 1968-06-27 SE SE08757/68A patent/SE331515B/xx unknown
- 1968-06-27 GB GB1225504D patent/GB1225504A/en not_active Expired
- 1968-06-27 DK DK310968AA patent/DK117847B/da unknown
- 1968-06-28 ES ES355600A patent/ES355600A1/es not_active Expired
- 1968-06-28 AT AT623168A patent/AT303815B/de not_active IP Right Cessation
- 1968-06-28 BE BE717388D patent/BE717388A/xx unknown
- 1968-07-01 US US741748A patent/US3595715A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL6808887A (de) | 1968-12-31 |
DE1764571B2 (de) | 1976-04-01 |
GB1225504A (de) | 1971-03-17 |
ES355600A1 (es) | 1970-01-01 |
FR1559609A (de) | 1969-03-14 |
DK117847B (da) | 1970-06-08 |
DE1764571A1 (de) | 1971-10-28 |
SE331515B (de) | 1971-01-04 |
US3595715A (en) | 1971-07-27 |
BE717388A (de) | 1968-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AT280349B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH513514A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
AT318001B (de) | Verfahren zur Herstellung einer integrierten Halbleitervorrichtung | |
CH519789A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
AT261004B (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
AT280350B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
AT320737B (de) | Halbleittervorrichtung und Verfahren zur Herstellung einer solchen Halbleitervorrichtung | |
CH533907A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
AT322632B (de) | Verfahren zur herstellung einer integrierten halbleitervorrichtung | |
AT303815B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Feldeffekttransistor | |
CH497048A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH512144A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
AT324421B (de) | Halbleitervorrichtung mit einem lateralen transistor und verfahren zur herstellung einer solchen | |
AT299311B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
AT256938B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH486774A (de) | Verfahren zur Herstellung von Halbleiterelementen | |
CH423999A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
CH474856A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH418466A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH520405A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
AT299309B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH474158A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH519790A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
AT316651B (de) | Verfahren zur Herstellung einer mit einem Metallkontakt versehenen Halbleitervorrichtung | |
AT271570B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |