DE1292259B - Process for manufacturing transistors by alloying - Google Patents
Process for manufacturing transistors by alloyingInfo
- Publication number
- DE1292259B DE1292259B DE1959T0016220 DET0016220A DE1292259B DE 1292259 B DE1292259 B DE 1292259B DE 1959T0016220 DE1959T0016220 DE 1959T0016220 DE T0016220 A DET0016220 A DE T0016220A DE 1292259 B DE1292259 B DE 1292259B
- Authority
- DE
- Germany
- Prior art keywords
- temperature
- alloy
- cooling
- alloying
- function
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 11
- 238000005275 alloying Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000000956 alloy Substances 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 238000012886 linear function Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000012888 cubic function Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Die Erfindung betrifft ein Verfahren zum Herstellen von Transistoren, insbesondere Hochfrequenztransistoren, durch Legieren, bei dem die Erwärmung auf die Legierungstemperatur möglichst rasch und die Abkühlung nach Erreichen der Legierungstemperatur zunächst langsamer und dann schneller erfolgt.The invention relates to a method for producing transistors, in particular high-frequency transistors, by alloying, in which the heating to the alloy temperature as quickly as possible and the cooling after the alloy temperature has been reached, it initially takes place more slowly and then more quickly.
Der Erfindung liegt die Aufgabe zugrunde, ein Legierungsverfahren anzugeben, welches im Anschluß an die Legierungszeit möglichst kurze Ätzbehandlung erfordert. Dies ist vor allem für Hochfrequenztransistören von Bedeutung, da unter einer längeren Ätzbehandlung die bei Hochfrequenztransistoren ohnehin dünnen Halbleiterplättchen so dünn werden, daß ihre mechanische Stabilität darunter leidet. Dies hat zur Folge, daß bereits geringe Erschütterungen bei Transistoren mit sehr dünnen Halbleiterplättchen ein erhebliches Rauschen verursachen.The invention is based on the object of specifying an alloying process which is followed by requires the shortest possible etching treatment due to the alloying time. This is especially true for high frequency transistors of importance, since under a longer etching treatment the high-frequency transistors anyway thin semiconductor wafers become so thin that their mechanical stability suffers. This has to As a result, even small vibrations in transistors with very thin semiconductor wafers have a significant impact Cause noise.
Zur Lösung der gestellten Aufgabe wird nach der Erfindung vorgeschlagen, daß der rasche Anstieg bis zur Legierungstemperatur nach einer Funktion dritten Grades in einer Temperaturzone erfolgt, deren Temperatur über der Legierungstemperatur liegt, und daß nach Erreichen der Legierungstemperatur bis zu einer oberhalb des Erstarrungspunktes liegenden Abkühlungstemperatur zunächst langsam nach einer linearen Funktion und von dieser Abkühlungstemperatur bis zur Erstarrungstemperatur beschleunigt nach einer e-Funktion abgekühlt wird.To solve the problem, it is proposed according to the invention that the rapid increase up to takes place at the alloy temperature according to a function of the third degree in a temperature zone, the temperature of which is above the alloy temperature, and that after reaching the alloy temperature up to one The cooling temperature above the solidification point is initially slow after a linear one Function and accelerated from this cooling temperature to the solidification temperature after a e function is cooled down.
Bei einem bekannten Verfahren erfolgt die Erwärmung auf die Legierungstemperatur nach einer Temperaturzeitf unktion mit einem sehr steilen Anstieg, die Abkühlung dagegen nach zwei verschiedenen Temperaturzeitfunktionen mit unterschiedlicher Steilheit. Während bei dem bekannten Verfahren zunächst langsamer abgekühlt wird, wird im letzten Abschnitt der Abkühlung schnell abgekühlt. Bei dem bekannten Verfahren setzt jedoch im Gegensatz zur Erfindung die Abkühlung nicht nach Erreichen der Legierungstemperatur ein, sondern es wird zunächst die Legierungstemperatur eine Zeitlang gehalten. Darüber hinaus ist dem bekannten Verfahren auch nicht die Lehre zu entnehmen, die Erwärmung auf die Legierungstemperatur in einer Temperaturzone vorzunehmen, deren Temperatur über der vorgesehenen Legierungstemperatur liegt. Schließlich erfolgt die Abkühlung bei dem bekannten Verfahren im Anschluß an die lineare Abkühlung auch nicht nach einer e-Funktion, sondern nach einer anderen Funktion. Die Erfindung hat gegenüber diesem bekannten Verfahren den Vorteil, daß durch die höhere Temperatur im Legierungsofen die Benetzung noch verbessert wird, während durch die unmittelbar nach Erreichen der Legierungstemperatur einsetzende lineare Abkühlung eine besonders günstige Rekristallisation der Schmelze erzielt wird.In a known method, the heating to the alloy temperature takes place after a temperature time f function with a very steep rise, the cooling, on the other hand, according to two different temperature-time functions with different steepnesses. While the known method is initially slower is cooled, it is cooled quickly in the last section of the cooling. In the known method In contrast to the invention, however, the cooling does not start after the alloy temperature has been reached instead, the alloy temperature is first held for a while. In addition, is the known method also does not teach the teaching of the heating to the alloy temperature to be carried out in a temperature zone whose temperature is above the intended alloy temperature lies. Finally, in the known method, the cooling takes place after the linear cooling also not according to an exponential function, but according to another function. The invention has opposite this known method has the advantage that the higher temperature in the alloy furnace Wetting is still improved, while immediately after reaching the alloy temperature onset of linear cooling, a particularly favorable recrystallization of the melt is achieved.
Die Erfindung wird im folgenden an einem Ausführungsbeispiel näher erläutert.The invention is explained in more detail below using an exemplary embodiment.
Wie die Figur erkennen läßt, zerfällt der Gesamttemperaturverlauf bei einem Legierungsverfahren nach der Erfindung in drei Bereiche. Der Bereich 1 erfaßt den Erwärmungsvorgang, durch den das Legierungsgut auf die Legierungstemperatur gebracht wird. Die Legierungstemperatur beträgt bei Verwendung von Blei—Indium und Germanium ungefähr 65O0C. Der Temperaturanstieg erfolgt nach einer Funktion dritten Grades. Tl ist dabei die Legierungstemperatur und tx die zur Legierungstemperatur gehörige Zeit, die in dem gewählten Beispiel 3 Minuten beträgt. Die Gesamtlegierungszeit beträgt ungefähr 10 Minuten.As the figure shows, the overall temperature profile in an alloying process according to the invention is divided into three areas. Area 1 records the heating process by which the alloy material is brought to the alloy temperature. The alloy temperature during use of lead-indium and germanium approximately 65O 0 C. The temperature rises by a cubic function. Tl is the alloy temperature and t x is the time associated with the alloy temperature, which in the selected example is 3 minutes. The total alloying time is approximately 10 minutes.
Die Abkühlung erfolgt zunächst linear bis zu einer Temperatur von 55O0C nach der FunktionThe cooling is initially linearly up to a temperature of 55O 0 C according to the function
/(O = Tl-(Tl-Ta) (t-tj / (*,-/,)./ (O = Tl- (Tl-Ta) (t-tj / (*, - /,).
Ta ist diejenige Temperatur, bis zu der die Abkühlung linear verläuft. Die Zeit, nach der die Abkühlungstemperatur erreicht ist, beträgt etwa 8 bis 9 Minuten und ist mit t% bezeichnet. Der weitere Abkühlungsverlauf erfolgt erheblich steiler nach einer e-Funktion. Ta is the temperature up to which the cooling proceeds linearly. The time after which the cooling temperature has been reached is about 8 to 9 minutes and is denoted by t %. The further cooling process takes place considerably more steeply according to an exponential function.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1959T0016220 DE1292259B (en) | 1959-02-04 | 1959-02-04 | Process for manufacturing transistors by alloying |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1959T0016220 DE1292259B (en) | 1959-02-04 | 1959-02-04 | Process for manufacturing transistors by alloying |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1292259B true DE1292259B (en) | 1969-04-10 |
Family
ID=7548167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1959T0016220 Pending DE1292259B (en) | 1959-02-04 | 1959-02-04 | Process for manufacturing transistors by alloying |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1292259B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1109535A (en) * | 1954-07-30 | 1956-01-30 | Csf | Improvements to nu-p junctions manufacturing processes |
| DE1018557B (en) * | 1954-08-26 | 1957-10-31 | Philips Nv | Process for the production of rectifying alloy contacts on a semiconductor body |
| BE561486A (en) * | 1957-10-03 | 1958-04-09 |
-
1959
- 1959-02-04 DE DE1959T0016220 patent/DE1292259B/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1109535A (en) * | 1954-07-30 | 1956-01-30 | Csf | Improvements to nu-p junctions manufacturing processes |
| DE1018557B (en) * | 1954-08-26 | 1957-10-31 | Philips Nv | Process for the production of rectifying alloy contacts on a semiconductor body |
| BE561486A (en) * | 1957-10-03 | 1958-04-09 |
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