DE112011104446T8 - Chemische Gasphasenabscheidungs-Vorrichtung und Verfahren zum Herstellen von lichtemittierenden Vorrichtungen mit derselben - Google Patents
Chemische Gasphasenabscheidungs-Vorrichtung und Verfahren zum Herstellen von lichtemittierenden Vorrichtungen mit derselben Download PDFInfo
- Publication number
- DE112011104446T8 DE112011104446T8 DE112011104446T DE112011104446T DE112011104446T8 DE 112011104446 T8 DE112011104446 T8 DE 112011104446T8 DE 112011104446 T DE112011104446 T DE 112011104446T DE 112011104446 T DE112011104446 T DE 112011104446T DE 112011104446 T8 DE112011104446 T8 DE 112011104446T8
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- Germany
- Prior art keywords
- light emitting
- vapor deposition
- same
- chemical vapor
- emitting devices
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Links
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100130779 | 2010-12-20 | ||
KR20100130780 | 2010-12-20 | ||
KR10-2010-0130780 | 2010-12-20 | ||
KRKR-10-2010-0130780 | 2010-12-20 | ||
KR10-2010-0130779 | 2010-12-20 | ||
KRKR-10-2010-0130779 | 2010-12-20 | ||
KR1020110137881A KR102025717B1 (ko) | 2010-12-20 | 2011-12-20 | 화학 기상 증착 장치 및 이를 사용한 발광소자 제조방법 |
KR10-2011-0137881 | 2011-12-20 | ||
KRKR-10-2011-0137881 | 2011-12-20 | ||
PCT/KR2011/009853 WO2012087002A2 (ko) | 2010-12-20 | 2011-12-20 | 화학 기상 증착 장치 및 이를 사용한 발광소자 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE112011104446T5 DE112011104446T5 (de) | 2013-09-19 |
DE112011104446T8 true DE112011104446T8 (de) | 2013-11-21 |
DE112011104446B4 DE112011104446B4 (de) | 2023-06-22 |
Family
ID=46314612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112011104446.1T Active DE112011104446B4 (de) | 2010-12-20 | 2011-12-20 | Chemische Gasphasenabscheidungs-Vorrichtung und Verfahren zum Herstellen von lichtemittierenden Vorrichtungen mit derselben |
Country Status (7)
Country | Link |
---|---|
US (1) | US8927302B2 (de) |
JP (1) | JP2014507788A (de) |
KR (1) | KR102025717B1 (de) |
CN (1) | CN103329249B (de) |
DE (1) | DE112011104446B4 (de) |
TW (1) | TW201239129A (de) |
WO (1) | WO2012087002A2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101420333B1 (ko) | 2012-11-19 | 2014-07-16 | 삼성디스플레이 주식회사 | 기상 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
US9255326B2 (en) * | 2013-03-12 | 2016-02-09 | Novellus Systems, Inc. | Systems and methods for remote plasma atomic layer deposition |
CN103305907A (zh) * | 2013-06-14 | 2013-09-18 | 光垒光电科技(上海)有限公司 | 用于外延沉积的反应腔 |
KR200476336Y1 (ko) * | 2013-06-21 | 2015-03-03 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 |
KR102079150B1 (ko) * | 2013-06-21 | 2020-02-19 | 주성엔지니어링(주) | 기판 처리 장치 |
US9464353B2 (en) * | 2013-11-21 | 2016-10-11 | Wonik Ips Co., Ltd. | Substrate processing apparatus |
KR102271731B1 (ko) * | 2013-11-26 | 2021-06-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 배치 프로세싱을 위한 경사진 플레이트 및 사용 방법들 |
TWI654333B (zh) * | 2013-12-18 | 2019-03-21 | 美商蘭姆研究公司 | 具有均勻性折流板之半導體基板處理設備 |
SG11201610307PA (en) * | 2014-07-03 | 2017-01-27 | Applied Materials Inc | Carousel batch epitaxy system |
JP6305314B2 (ja) * | 2014-10-29 | 2018-04-04 | 東京エレクトロン株式会社 | 成膜装置およびシャワーヘッド |
US10954597B2 (en) * | 2015-03-17 | 2021-03-23 | Asm Ip Holding B.V. | Atomic layer deposition apparatus |
TW201833369A (zh) * | 2017-03-13 | 2018-09-16 | 光鋐科技股份有限公司 | 氮化鋁(AlN)的成長方法 |
CN106948002B (zh) * | 2017-03-15 | 2019-07-09 | 南京国盛电子有限公司 | 电磁感应加热外延炉的双面基座结构 |
CN108624955B (zh) * | 2017-03-16 | 2019-11-29 | 北京北方华创微电子装备有限公司 | 反应腔室及外延生长设备 |
KR102369676B1 (ko) * | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
JP7448387B2 (ja) * | 2019-06-06 | 2024-03-12 | パナソニックホールディングス株式会社 | Iii族窒化物半導体結晶の製造装置 |
CN115142047B (zh) * | 2022-06-30 | 2023-07-07 | 北海惠科半导体科技有限公司 | 晶圆载具及氮化硅介质膜的制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6321680B2 (en) | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
MY141175A (en) | 2000-09-08 | 2010-03-31 | Semiconductor Energy Lab | Light emitting device, method of manufacturing the same, and thin film forming apparatus |
AU2001283944A1 (en) | 2000-09-22 | 2002-04-02 | Aixtron Ag | Gas inlet mechanism for cvd-method and device |
JP3924483B2 (ja) | 2001-03-19 | 2007-06-06 | アイピーエス リミテッド | 化学気相蒸着装置 |
JP2003158081A (ja) | 2001-11-22 | 2003-05-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US7118781B1 (en) * | 2003-04-16 | 2006-10-10 | Cree, Inc. | Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
KR100731164B1 (ko) | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | 샤워헤드를 구비한 화학기상 증착 방법 및 장치 |
KR100698404B1 (ko) * | 2005-06-24 | 2007-03-23 | 주식회사 유진테크 | 회전식 히터구조를 가지는 화학기상증착장치 및 그제어방법 |
KR20070041957A (ko) * | 2005-10-17 | 2007-04-20 | 삼성전자주식회사 | 이온주입설비의 로드락챔버 |
KR20070098104A (ko) | 2006-03-31 | 2007-10-05 | 삼성전자주식회사 | 가스커튼을 구비한 박막증착장치 |
US7476291B2 (en) * | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
KR101004927B1 (ko) * | 2008-04-24 | 2010-12-29 | 삼성엘이디 주식회사 | Cvd용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치 |
KR100998011B1 (ko) | 2008-05-22 | 2010-12-03 | 삼성엘이디 주식회사 | 화학기상 증착장치 |
KR101046119B1 (ko) * | 2009-01-12 | 2011-07-01 | 삼성엘이디 주식회사 | 화학 기상 증착 장치 |
KR101559470B1 (ko) | 2009-06-04 | 2015-10-12 | 주성엔지니어링(주) | 화학 기상 증착 장치 |
KR20100089058A (ko) | 2010-07-28 | 2010-08-11 | 삼성엘이디 주식회사 | 샤워 헤드와 이를 구비하는 화학 기상 증착 장치 |
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2011
- 2011-12-20 CN CN201180061432.8A patent/CN103329249B/zh active Active
- 2011-12-20 TW TW100147325A patent/TW201239129A/zh unknown
- 2011-12-20 DE DE112011104446.1T patent/DE112011104446B4/de active Active
- 2011-12-20 JP JP2013546009A patent/JP2014507788A/ja active Pending
- 2011-12-20 US US13/824,349 patent/US8927302B2/en active Active
- 2011-12-20 WO PCT/KR2011/009853 patent/WO2012087002A2/ko active Application Filing
- 2011-12-20 KR KR1020110137881A patent/KR102025717B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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US8927302B2 (en) | 2015-01-06 |
WO2012087002A3 (ko) | 2012-10-04 |
DE112011104446B4 (de) | 2023-06-22 |
WO2012087002A2 (ko) | 2012-06-28 |
US20130260488A1 (en) | 2013-10-03 |
JP2014507788A (ja) | 2014-03-27 |
CN103329249B (zh) | 2016-08-10 |
TW201239129A (en) | 2012-10-01 |
KR20120069590A (ko) | 2012-06-28 |
CN103329249A (zh) | 2013-09-25 |
DE112011104446T5 (de) | 2013-09-19 |
KR102025717B1 (ko) | 2019-09-27 |
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