DE1087705B - Alloy form for alloying contacts on semiconducting bodies - Google Patents

Alloy form for alloying contacts on semiconducting bodies

Info

Publication number
DE1087705B
DE1087705B DEN15441A DEN0015441A DE1087705B DE 1087705 B DE1087705 B DE 1087705B DE N15441 A DEN15441 A DE N15441A DE N0015441 A DEN0015441 A DE N0015441A DE 1087705 B DE1087705 B DE 1087705B
Authority
DE
Germany
Prior art keywords
alloy
semiconducting
alloy form
contacts
alloying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN15441A
Other languages
German (de)
Inventor
Leendert Pellekaan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1087705B publication Critical patent/DE1087705B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Contacts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

DEUTSCHESGERMAN

Die Erfindung betrifft eine Legierungsform zum Auflegieren von Kontakten auf halbleitende Körper, insbesondere zur Herstellung von Transistoren, Kristalldioden und ähnlichen Halbleiteranordnungen.The invention relates to a form of alloy for alloying contacts on semiconducting bodies, especially for the production of transistors, crystal diodes and similar semiconductor arrangements.

Es ist üblich, zu diesem Zweck eine aus Graphit bestehende Vorrichtung, im folgenden kurzhin als »Legierform« bezeichnet, zu verwenden, in der ein oder mehrere Räume ausgespart sind, die als Lagerort für ebenso viele halbleitende Körper dienen und bei der eine entsprechende Anzahl öffnungen vorgesehen sind, in denen das Material für die Kontakte untergebracht wird. Dieses Material ist vorher meist in Form von sehr kleinen Kugeln gebracht. Das Aufschmelzen selbst erfolgt dadurch, daß die Legierform in einen Ofen eingeführt und in diesem der Wärmebehandlung unterzogen wird. Die Legierformen bestehen meist aus Graphit, weil dieser Werkstoff in sehr hoher Reinheit hergestellt werden kann, die hierbei wesentlich ist. Auch sind Legierformen aus keramischem Material oder nichtrostendem Stahl hergestellt worden. Bei der Verwendung dieser letztgenannten Werkstoffe lassen sich Verunreinigungen als beim Graphit vermeiden. Dieser ist jedoch grobkörnig im Vergleich zu den winzigen darin anzubringenden öffnungen. Außerdem dürfen wegen der geringen Festigkeit des Graphits die Formteile nicht zu klein bemessen werden. Infolgedessen ist die Zusammensetzung des Gases am Ort der Legierung schwer kontrollierbar. It is customary to use a device made of graphite for this purpose, hereinafter referred to as »Alloy form« denotes to be used in which one or more rooms are left open as a storage location serve for the same number of semiconducting bodies and for which a corresponding number of openings are provided in which the material for the contacts is housed. This material is mostly in beforehand Brought in the form of very small balls. The melting itself takes place in that the alloy form introduced into a furnace and subjected to the heat treatment in this. The alloy forms exist mostly made of graphite, because this material can be produced with a very high degree of purity is essential. Alloy molds are also made from ceramic material or stainless steel been. When using these last-mentioned materials, impurities can be compared to Avoid graphite. However, this is coarse-grained compared to the tiny ones to be attached in it openings. In addition, because of the low strength of the graphite, the molded parts must not be too small be measured. As a result, the composition of the gas at the location of the alloy is difficult to control.

Nach der Erfindung werden nun Legierformen verwendet, die aus Glimmer bestehende Teile besitzen, in denen öffnungen vorgesehen sind, um das Kontaktmaterial an Ort und Stelle zu halten. Es hat sich gezeigt, daß Glimmer nach ausreichender Reinigung keine störenden Verunreinigungen abgibt. Außerdem wird infolge seiner geringen Dicke der Gaszutritt am Ort der Legierungsschmelze nicht wesentlich behindert. According to the invention, alloy molds are now used which have parts made of mica, in which openings are provided to hold the contact material in place. It has shown, that mica does not give off any disruptive impurities after sufficient cleaning. aside from that Due to its small thickness, the gas access at the location of the alloy melt is not significantly hindered.

Die Legierungsform nach der Erfindung wird im folgenden an Hand eines in der Zeichnung dargestellten Ausführungsbeispiels näher erläutert.The alloy form according to the invention is shown below with reference to one in the drawing Embodiment explained in more detail.

Die Figur zeigt im Schnitt eine Legierform in vergrößertem Maßstab.The figure shows a section of an alloy form on an enlarged scale.

Eine aus Graphit oder Chromeisen bestehende Platte besitzt eine Höhlung 2, in der ein halbleitender Körper 3, z. B. eine Germaniumscheibe, untergebracht ist.A plate made of graphite or chrome iron has a cavity 2 in which a semiconducting body 3, e.g. B. a germanium disk is housed.

Legierungsform zum Auflegieren
von Kontakten auf halbleitende KörperAlloy form for alloying
of contacts on semiconducting bodies

Anmelder:Applicant:

N. V. Philips' Gloeilampenfabrieken,
Eindhoven (Niederlande)NV Philips' Gloeilampenfabrieken,
Eindhoven (Netherlands)

Vertreter: Dr. rer. nat. P. Roßbach, Patentanwalt,
Hamburg I1 Mönckebexgstr. 7Representative: Dr. rer. nat. P. Roßbach, patent attorney,
Hamburg I 1 Mönckebexgstr. 7th

Beanspruchte Priorität:
Niederlande vom 8. August 1957Claimed priority:
Netherlands 8 August 1957

Leendert Pellekaan, Eindhoven (Niederlande),
ist als Erfinder genannt wordenLeendert Pellekaan, Eindhoven (Netherlands),
has been named as the inventor

Auf der Platte 1 liegt eine Glimmerplatte 4 mit zwei öffnungen 5, in denen zwei Kügelchen 6 aus Kontaktmaterial, z. B. Indium, liegen. Die Legierform kann, nachdem sie auf diese Weise gefüllt worden ist, in einen Ofen eingeführt werden.On the plate 1 lies a mica plate 4 with two openings 5 in which two spheres 6 made of contact material, z. B. indium. The alloy mold can, after being filled in this way, in introduced into an oven.

Es ist möglich in eine 200 μ starke Glimmerplatte Löcher zu bohren oder zu stanzen, die einen Durchmesser von 100 μ und einen gegenseitigen Abstand von 50 μ haben. Solche Abmessungen sind bei der Verwendung von Graphit als Material für ein solches Formteil praktisch nicht erreichbar.It is possible to drill or punch holes in a 200 μ thick mica plate that have a diameter of 100 μ and a mutual distance of 50 μ . Such dimensions are practically unattainable when graphite is used as the material for such a molded part.

Claims (1)

Patentanspruch:Claim: Legierungsform zum Auflegieren von Kontakten auf halbleitende Körper, insbesondere zur Herstellung von Transistoren, Kristalldioden und ähnlichen Halbleiteranordnungen mit mindestens einem Raum als Lagerort für die halbleitenden Körper und einem mit Öffnungen versehenen Formteil, in denen das Legierungsmaterial angeordnet wird, dadurch gekennzeichnet, daß der Formteil mit den öffnungen aus Glimmer besteht.Alloy form for alloying contacts on semiconducting bodies, in particular for the production of transistors, crystal diodes and similar semiconductor arrangements with at least one space as a storage location for the semiconducting body and a molded part provided with openings in which the alloy material is arranged, characterized in that the molded part with the openings are made of mica. In Betracht gezogene Druckschriften:
Französische Patentschrift Nr. 1 088 286;
USA-Patentschrift Nr. 2 805 968.Considered publications:
French Patent No. 1,088,286;
U.S. Patent No. 2,805,968. Hierzu 1 Blatt Zeichnungen1 sheet of drawings
DEN15441A 1957-08-08 1958-08-05 Alloy form for alloying contacts on semiconducting bodies Pending DE1087705B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL219744 1957-08-08

Publications (1)

Publication Number Publication Date
DE1087705B true DE1087705B (en) 1960-08-25

Family

ID=19750946

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN15441A Pending DE1087705B (en) 1957-08-08 1958-08-05 Alloy form for alloying contacts on semiconducting bodies

Country Status (7)

Country Link
US (1) US2979024A (en)
BE (1) BE570141A (en)
CH (1) CH363095A (en)
DE (1) DE1087705B (en)
FR (1) FR1201191A (en)
GB (1) GB884557A (en)
NL (2) NL219744A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125084B (en) * 1961-01-31 1962-03-08 Telefunken Patent Method for alloying alloy material on a semiconductor body
DE1289193B (en) * 1963-01-09 1969-02-13 Philips Nv Method for producing an alloy contact on a semiconductor body

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105784A (en) * 1960-12-23 1963-10-01 Merck & Co Inc Process of making semiconductors
GB1001517A (en) * 1961-09-12 1965-08-18 Mullard Ltd Improvements in and relating to jigs for alloying material to semiconductor bodies
US3302612A (en) * 1963-09-12 1967-02-07 Guy R Stutzman Pattern masks and method for making same
US4530861A (en) * 1983-12-19 1985-07-23 General Electric Company Method and apparatus for masking a surface of a blade member
US7946470B2 (en) * 2005-12-30 2011-05-24 Semx Corporation Method for depositing solder material on an electronic component part using separators

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1088286A (en) * 1952-08-14 1955-03-04 Sylvania Electric Prod Surface junction semiconductor devices
US2805968A (en) * 1952-06-02 1957-09-10 Rca Corp Semiconductor devices and method of making same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670700A (en) * 1925-04-28 1928-05-22 Gen Electric Method of electric welding
US2506047A (en) * 1946-12-31 1950-05-02 Sylvania Electric Prod Protective device for use in soldering operations
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
DE1153119B (en) * 1955-08-05 1963-08-22 Siemens Ag Method for manufacturing a semiconductor device
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2805968A (en) * 1952-06-02 1957-09-10 Rca Corp Semiconductor devices and method of making same
FR1088286A (en) * 1952-08-14 1955-03-04 Sylvania Electric Prod Surface junction semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125084B (en) * 1961-01-31 1962-03-08 Telefunken Patent Method for alloying alloy material on a semiconductor body
DE1289193B (en) * 1963-01-09 1969-02-13 Philips Nv Method for producing an alloy contact on a semiconductor body

Also Published As

Publication number Publication date
FR1201191A (en) 1959-12-29
NL108503C (en)
US2979024A (en) 1961-04-11
CH363095A (en) 1962-07-15
BE570141A (en)
NL219744A (en)
GB884557A (en) 1961-12-13

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