DE10308174A8 - Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas - Google Patents

Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas Download PDF

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Publication number
DE10308174A8
DE10308174A8 DE10308174A DE10308174A DE10308174A8 DE 10308174 A8 DE10308174 A8 DE 10308174A8 DE 10308174 A DE10308174 A DE 10308174A DE 10308174 A DE10308174 A DE 10308174A DE 10308174 A8 DE10308174 A8 DE 10308174A8
Authority
DE
Germany
Prior art keywords
plasma
arrangement
radiation source
source based
debris reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10308174A
Other languages
English (en)
Other versions
DE10308174B4 (de
DE10308174A1 (de
Inventor
Duc Chinh Prof. Dr. Tran
Jürgen Dr. Kleinschmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Xtreme Technologies GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xtreme Technologies GmbH filed Critical Xtreme Technologies GmbH
Priority to DE10308174A priority Critical patent/DE10308174B4/de
Priority to US10/784,438 priority patent/US7079224B2/en
Publication of DE10308174A1 publication Critical patent/DE10308174A1/de
Publication of DE10308174A8 publication Critical patent/DE10308174A8/de
Application granted granted Critical
Publication of DE10308174B4 publication Critical patent/DE10308174B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/72—Controlling or varying light intensity, spectral composition, or exposure time in photographic printing apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE10308174A 2003-02-24 2003-02-24 Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas Expired - Fee Related DE10308174B4 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10308174A DE10308174B4 (de) 2003-02-24 2003-02-24 Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas
US10/784,438 US7079224B2 (en) 2003-02-24 2004-02-23 Arrangement for debris reduction in a radiation source based on a plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10308174A DE10308174B4 (de) 2003-02-24 2003-02-24 Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas

Publications (3)

Publication Number Publication Date
DE10308174A1 DE10308174A1 (de) 2004-09-09
DE10308174A8 true DE10308174A8 (de) 2005-02-03
DE10308174B4 DE10308174B4 (de) 2010-01-14

Family

ID=32841900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10308174A Expired - Fee Related DE10308174B4 (de) 2003-02-24 2003-02-24 Anordnung zur Debrisreduktion bei einer Strahlungsquelle auf Basis eines Plasmas

Country Status (2)

Country Link
US (1) US7079224B2 (de)
DE (1) DE10308174B4 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100748447B1 (ko) * 2002-08-23 2007-08-10 에이에스엠엘 네델란즈 비.브이. 리소그래피 투영장치 및 상기 장치에 사용하기 위한파티클 배리어
KR20060126740A (ko) * 2004-02-12 2006-12-08 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 소프트 ｘ선 가공장치 및 소프트 ｘ선 가공방법
US7692169B2 (en) * 2004-12-28 2010-04-06 Asml Netherlands B.V. Method for filtering particles out of a beam of radiation and filter for a lithographic apparatus
WO2009066242A2 (en) * 2007-11-22 2009-05-28 Philips Intellectual Property & Standards Gmbh Method of increasing the operation lifetime of a collector optics arranged in an irradiation device and corresponding irradiation device
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
US9057962B2 (en) * 2010-06-18 2015-06-16 Media Lario S.R.L. Source-collector module with GIC mirror and LPP EUV light source
JP2012028759A (ja) * 2010-06-29 2012-02-09 Asml Netherlands Bv Ｅｕｖ放射源およびｅｕｖ放射を発生させる方法
KR102281775B1 (ko) 2012-11-15 2021-07-27 에이에스엠엘 네델란즈 비.브이. 리소그래피를 위한 방법 및 방사선 소스
US10875060B2 (en) * 2019-04-18 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for removing debris from collector
WO2024002672A1 (en) * 2022-06-28 2024-01-04 Carl Zeiss Smt Gmbh Euv collector for an euv projection exposure apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285737B1 (en) * 2000-01-21 2001-09-04 Euv Llc Condenser for extreme-UV lithography with discharge source
WO2002027406A2 (en) * 2000-09-29 2002-04-04 Carl Zeiss Illumination system particularly for microlithography
US20030020890A1 (en) * 2001-07-05 2003-01-30 Canon Kabushiki Kaisha Debris removing system for use in X-ray light source
DE10136620A1 (de) * 2001-07-19 2003-02-06 Zeiss Carl Schmalbandiger Spektralfilter und seine Verwendung
DE10138284A1 (de) * 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064072A (en) * 1997-05-12 2000-05-16 Cymer, Inc. Plasma focus high energy photon source
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
US6278764B1 (en) * 1999-07-22 2001-08-21 The Regents Of The Unviersity Of California High efficiency replicated x-ray optics and fabrication method
US6377651B1 (en) 1999-10-11 2002-04-23 University Of Central Florida Laser plasma source for extreme ultraviolet lithography using a water droplet target
DE10128284B4 (de) 2000-12-30 2013-03-07 Robert Bosch Gmbh System und Verfahren zum Überwachen von Eigenschaften eines Reifens
DE10215469B4 (de) 2002-04-05 2005-03-17 Xtreme Technologies Gmbh Anordnung zur Unterdrückung von Teilchenemission bei einer Strahlungserzeugung auf Basis eines heißen Plasmas
TWI242690B (en) * 2002-08-15 2005-11-01 Asml Netherlands Bv Reflector assembly, lithographic projection apparatus, radiation system with the reflector assembly, and method of manufacturing an integrated structure by a lithographic process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285737B1 (en) * 2000-01-21 2001-09-04 Euv Llc Condenser for extreme-UV lithography with discharge source
WO2002027406A2 (en) * 2000-09-29 2002-04-04 Carl Zeiss Illumination system particularly for microlithography
US20030020890A1 (en) * 2001-07-05 2003-01-30 Canon Kabushiki Kaisha Debris removing system for use in X-ray light source
DE10136620A1 (de) * 2001-07-19 2003-02-06 Zeiss Carl Schmalbandiger Spektralfilter und seine Verwendung
DE10138284A1 (de) * 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren

Also Published As

Publication number Publication date
DE10308174B4 (de) 2010-01-14
US7079224B2 (en) 2006-07-18
US20040165171A1 (en) 2004-08-26
DE10308174A1 (de) 2004-09-09

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8196 Reprint of faulty title page (publication) german patentblatt: part 1a6
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
R081 Change of applicant/patentee

Owner name: USHIO DENKI KABUSHIKI KAISHA, JP

Free format text: FORMER OWNER: XTREME TECHNOLOGIES GMBH, 07745 JENA, DE

Effective date: 20110816

R082 Change of representative

Representative=s name: PATENTANWAELTE OEHMKE UND KOLLEGEN, DE

Effective date: 20110816

R081 Change of applicant/patentee

Owner name: USHIO DENKI KABUSHIKI KAISHA, JP

Free format text: FORMER OWNER: XTREME TECHNOLOGIES GMBH, 52074 AACHEN, DE

Effective date: 20131114

R082 Change of representative

Representative=s name: PATENTANWAELTE OEHMKE UND KOLLEGEN, DE

Effective date: 20131114

R082 Change of representative

Representative=s name: GLEIM PETRI OEHMKE PATENT- UND RECHTSANWALTSPA, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee