DE10296978T5 - Elektrodenteil für eine Plasmabehandlungsvorrichtung, Plasmabehandlungsvorrichtung und Plasmabehandlungsverfahren - Google Patents
Elektrodenteil für eine Plasmabehandlungsvorrichtung, Plasmabehandlungsvorrichtung und Plasmabehandlungsverfahren Download PDFInfo
- Publication number
- DE10296978T5 DE10296978T5 DE10296978T DE10296978T DE10296978T5 DE 10296978 T5 DE10296978 T5 DE 10296978T5 DE 10296978 T DE10296978 T DE 10296978T DE 10296978 T DE10296978 T DE 10296978T DE 10296978 T5 DE10296978 T5 DE 10296978T5
- Authority
- DE
- Germany
- Prior art keywords
- plasma treatment
- treatment device
- electrode part
- treatment method
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-190891 | 2001-06-25 | ||
JP2001190891A JP2003007682A (ja) | 2001-06-25 | 2001-06-25 | プラズマ処理装置用の電極部材 |
PCT/JP2002/006293 WO2003001557A1 (en) | 2001-06-25 | 2002-06-24 | Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10296978T5 true DE10296978T5 (de) | 2004-10-07 |
DE10296978B4 DE10296978B4 (de) | 2010-03-04 |
Family
ID=19029592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10296978T Expired - Fee Related DE10296978B4 (de) | 2001-06-25 | 2002-06-24 | Elektrodenteil für eine Plasmabehandlungsvorrichtung, Plasmabehandlungsvorrichtung und Plasmabehandlungsverfahren |
Country Status (8)
Country | Link |
---|---|
US (1) | US7138034B2 (de) |
JP (1) | JP2003007682A (de) |
KR (1) | KR100845178B1 (de) |
CN (1) | CN1302512C (de) |
DE (1) | DE10296978B4 (de) |
MY (1) | MY142898A (de) |
TW (1) | TW559942B (de) |
WO (1) | WO2003001557A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7074720B2 (en) * | 2001-06-25 | 2006-07-11 | Matsushita Electric Industrial Co., Ltd. | Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device |
KR100622831B1 (ko) | 2004-04-13 | 2006-09-18 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
JP2006120822A (ja) * | 2004-10-21 | 2006-05-11 | Tokyo Electron Ltd | 基板処理装置及び基板処理装置の圧力制御方法 |
JP4654738B2 (ja) * | 2005-04-05 | 2011-03-23 | パナソニック株式会社 | プラズマ処理装置 |
DE602006011140D1 (de) | 2005-04-05 | 2010-01-28 | Krosaki Harima Corp | Gas-show-erplatte für eine plasmaverarbeitungsvorrichtung |
JP4619854B2 (ja) * | 2005-04-18 | 2011-01-26 | 東京エレクトロン株式会社 | ロードロック装置及び処理方法 |
JP5058909B2 (ja) * | 2007-08-17 | 2012-10-24 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及び薄膜トランジスタの作製方法 |
TWI436831B (zh) | 2009-12-10 | 2014-05-11 | Orbotech Lt Solar Llc | 真空處理裝置之噴灑頭總成 |
JP5809396B2 (ja) * | 2010-06-24 | 2015-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
US10658161B2 (en) * | 2010-10-15 | 2020-05-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
CN103169199A (zh) * | 2013-03-15 | 2013-06-26 | 苏州卫鹏机电科技有限公司 | 一种鞋材表面等离子体放电处理设备的真空箱 |
CN104425289B (zh) * | 2013-09-11 | 2017-12-15 | 先进科技新加坡有限公司 | 利用激发的混合气体的晶粒安装装置和方法 |
TWI584706B (zh) * | 2014-07-24 | 2017-05-21 | Uvat Technology Co Ltd | A plasma etch device for a printed circuit board |
CN104835876B (zh) * | 2015-04-27 | 2018-01-05 | 北京金晟阳光科技有限公司 | 气体均匀布气装置 |
KR101938306B1 (ko) * | 2016-04-18 | 2019-01-14 | 최상준 | 건식 에칭장치의 제어방법 |
IT201700083957A1 (it) * | 2017-07-24 | 2019-01-24 | Wise S R L | Metodo e apparato per il trattamento di pannelli |
JP2022523541A (ja) * | 2019-03-08 | 2022-04-25 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバ用の多孔性シャワーヘッド |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4367114A (en) | 1981-05-06 | 1983-01-04 | The Perkin-Elmer Corporation | High speed plasma etching system |
JPS586134A (ja) | 1981-07-03 | 1983-01-13 | Seiko Epson Corp | プラズマエツチング装置 |
JPS59111967A (ja) | 1982-12-17 | 1984-06-28 | 株式会社ブリヂストン | セラミック多孔体 |
FR2538987A1 (fr) * | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
JPS60171220A (ja) | 1984-02-14 | 1985-09-04 | Nippon Cement Co Ltd | アルミナ多孔体の製造方法 |
US4664858A (en) * | 1984-08-21 | 1987-05-12 | Kurosaki Refractories Co., Ltd. | Manufacturing method of a ceramics body having through holes |
JPS61278144A (ja) | 1985-06-01 | 1986-12-09 | Anelva Corp | プラズマ処理装置 |
AT386316B (de) | 1985-11-11 | 1988-08-10 | Voest Alpine Ag | Plasmareaktor zum aetzen von leiterplatten |
JPS63282179A (ja) | 1987-05-12 | 1988-11-18 | Nippon Steel Corp | 多孔質セラミックスの製造方法 |
JPH03101126A (ja) | 1989-09-13 | 1991-04-25 | Eagle Ind Co Ltd | プラズマエッチング装置用電極 |
JPH07114198B2 (ja) * | 1989-10-02 | 1995-12-06 | 東海カーボン株式会社 | プラズマエッチング用電極板 |
JPH0437124A (ja) * | 1990-06-01 | 1992-02-07 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
JP2837993B2 (ja) | 1992-06-19 | 1998-12-16 | 松下電工株式会社 | プラズマ処理方法およびその装置 |
JP3173928B2 (ja) * | 1992-09-25 | 2001-06-04 | キヤノン株式会社 | 基板保持装置、基板保持方法および露光装置 |
JPH0797690A (ja) * | 1993-09-29 | 1995-04-11 | Toppan Printing Co Ltd | プラズマcvd装置 |
KR100193356B1 (ko) * | 1994-03-31 | 1999-06-15 | 이사오 우치가사키 | 다공질체의 제조 방법 |
JPH08209349A (ja) * | 1995-02-06 | 1996-08-13 | Kokusai Electric Co Ltd | プラズマcvd装置 |
DE19505906A1 (de) * | 1995-02-21 | 1996-08-22 | Siemens Ag | Verfahren zum Damage-Ätzen der Rückseite einer Halbleiterscheibe bei geschützter Scheibenvorderseite |
WO1996031997A1 (fr) | 1995-04-07 | 1996-10-10 | Seiko Epson Corporation | Equipement de traitement de surface |
JP4128628B2 (ja) * | 1996-05-15 | 2008-07-30 | ハイピリオン カタリシス インターナショナル インコーポレイテッド | 堅い多孔質炭素構造体及びその製造方法 |
US5968377A (en) * | 1996-05-24 | 1999-10-19 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
FR2756668B1 (fr) * | 1996-12-02 | 1999-01-08 | Accumulateurs Fixes | Electrode a support tridimensionnel poreux |
JPH11135442A (ja) * | 1997-10-31 | 1999-05-21 | Canon Inc | 堆積膜形成装置及び堆積膜形成方法 |
JPH11283973A (ja) | 1998-03-27 | 1999-10-15 | Toshiba Ceramics Co Ltd | プラズマエッチング装置用電極の製造方法 |
JP3695184B2 (ja) * | 1998-12-03 | 2005-09-14 | 松下電器産業株式会社 | プラズマエッチング装置およびプラズマエッチング方法 |
US6118218A (en) * | 1999-02-01 | 2000-09-12 | Sigma Technologies International, Inc. | Steady-state glow-discharge plasma at atmospheric pressure |
-
2001
- 2001-06-25 JP JP2001190891A patent/JP2003007682A/ja active Pending
-
2002
- 2002-06-21 US US10/176,804 patent/US7138034B2/en not_active Expired - Fee Related
- 2002-06-24 WO PCT/JP2002/006293 patent/WO2003001557A1/en active Application Filing
- 2002-06-24 KR KR1020037016901A patent/KR100845178B1/ko not_active IP Right Cessation
- 2002-06-24 DE DE10296978T patent/DE10296978B4/de not_active Expired - Fee Related
- 2002-06-24 CN CNB02812684XA patent/CN1302512C/zh not_active Expired - Fee Related
- 2002-06-25 TW TW091113856A patent/TW559942B/zh not_active IP Right Cessation
- 2002-06-25 MY MYPI20022358A patent/MY142898A/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20040021617A (ko) | 2004-03-10 |
JP2003007682A (ja) | 2003-01-10 |
CN1302512C (zh) | 2007-02-28 |
TW559942B (en) | 2003-11-01 |
US7138034B2 (en) | 2006-11-21 |
KR100845178B1 (ko) | 2008-07-10 |
DE10296978B4 (de) | 2010-03-04 |
MY142898A (en) | 2011-01-31 |
WO2003001557A1 (en) | 2003-01-03 |
US20020195202A1 (en) | 2002-12-26 |
CN1520604A (zh) | 2004-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE10296978T5 (de) | Elektrodenteil für eine Plasmabehandlungsvorrichtung, Plasmabehandlungsvorrichtung und Plasmabehandlungsverfahren | |
DE10339915A8 (de) | Entwicklungsverfahren, Substratbehandlungsverfahren und Substratsbehandlungseinrichtung | |
DE60219271D1 (de) | Drucksystem, Druckgerät, Druckverfahren und Druckprogramm | |
DE60028034D1 (de) | Elektrode und herstellungsmethode für eine elektrode | |
DE60214119D1 (de) | Anzeigesteuergerät, Anzeigesteuerungsverfahren, Betätigungssteuergerät und Betätigungssteuerungsverfahren | |
DE60238152D1 (de) | Elektrodenstruktur für Halbleitervorrichtung, sowie Herstellungsverfahren und -apparatur | |
EP1361604A4 (de) | Einrichtung und verfahren zur behandlung | |
DE60223630D1 (de) | Lithographisches Gerät und zugehöriges Herstellungsverfahren | |
DE19981060T1 (de) | Elektrode für eine Entladungsoberflächenbehandlung, Herstellungsverfahren dafür, Entladungsoberflächenbehandlungsverfahren und Vorrichtung dafür | |
DE60133076D1 (de) | Walzverfahren und Walzwerkzeug, Walzwerkzeugaufbau und Vorrichtung | |
DE60216411D1 (de) | Robotervorrichtung, gesichtserkennungsverfahren und gesichtserkennungsvorrichtung | |
DE60235813D1 (de) | Verfahren und vorrichtung für mikrojet aktivierte, niederenergetische ionen-erzeugung und -transport in der plasmabehandlung | |
NO20035156L (no) | Fremgangsmåter for brønnbehandling | |
NO20001870L (no) | Ny fremgangsmÕte for behandling | |
DE60218172D1 (de) | Verbundpulverfüllverfahren und verbundpulverfüllvorrichtung sowie verbundpulverformverfahren und verbundpulverformvorrichtung | |
EP1365446A4 (de) | Plasmabehandlungseinrichtung und plasmabehandlungsverfahren | |
NO20040353L (no) | Ny terapeutsk metode | |
BR0205514B1 (pt) | processos de tratamento de cabelo | |
DE60228261D1 (de) | Wärmebehandlungsanlage und Betriebsverfahren dafür | |
NO20020504D0 (no) | Fremgangsmåte og anordning for steriliserende fordampet hydrogenperoksid | |
DE60231538D1 (de) | Sputtertarget und herstellungsverfahren dafür | |
DE60237143D1 (de) | Empfangseinrichtung, empfangsverfahren und namenauflösungsverfahren | |
NL1021504A1 (nl) | Waterstofbehandelingsproces. | |
DE60216191D1 (de) | Zylinderkennungapparate und Zylinderkennungmethode für Maschine | |
DE60217085D1 (de) | Druckgerät, diagnoseverfahren für druckgerät und diagnoseprogramm für druckgerät |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8127 | New person/name/address of the applicant |
Owner name: KROSAKI HARIMA CORPORATION, KITAKYUSHU, FUKUOK, JP Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER, Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUS, DE |
|
R081 | Change of applicant/patentee |
Owner name: PANASONIC CORPORATION, KADOMA-SHI, JP Free format text: FORMER OWNER: KROSAKI HARIMA CORPORATION, PANASONIC CORPORATION, , JP Effective date: 20120502 Owner name: PANASONIC CORPORATION, KADOMA-SHI, JP Free format text: FORMER OWNERS: KROSAKI HARIMA CORPORATION, KITAKYUSHU, FUKUOKA, JP; PANASONIC CORPORATION, KADOMA-SHI, OSAKA, JP Effective date: 20120502 |
|
R082 | Change of representative |
Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUS, DE Effective date: 20120502 Representative=s name: GRUENECKER PATENT- UND RECHTSANWAELTE PARTG MB, DE Effective date: 20120502 |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20150101 |