DE10207324A1 - Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch ein Substrationsverfahren und Vorrichtung, die das Verfahren beinhaltet - Google Patents
Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch ein Substrationsverfahren und Vorrichtung, die das Verfahren beinhaltetInfo
- Publication number
- DE10207324A1 DE10207324A1 DE10207324A DE10207324A DE10207324A1 DE 10207324 A1 DE10207324 A1 DE 10207324A1 DE 10207324 A DE10207324 A DE 10207324A DE 10207324 A DE10207324 A DE 10207324A DE 10207324 A1 DE10207324 A1 DE 10207324A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- resonator
- upper electrode
- thickness
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010409 thin film Substances 0.000 title abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
- 238000003801 milling Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 132
- 239000000463 material Substances 0.000 description 35
- 239000012792 core layer Substances 0.000 description 19
- 239000004020 conductor Substances 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 3
- 240000002834 Paulownia tomentosa Species 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 210000003608 fece Anatomy 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (19)
Erzeugen einer unteren Elektrodenschicht (72);
Erzeugen einer piezoelektrischen (PZ-) Schicht (74) über der unteren Elektrodenschicht (72);
Erzeugen einer oberen Elektrodenschicht (76) über der PZ-Schicht (74), wobei die obere Elektrodenschicht eine erste Dicke aufweist;
teilweises Ätzen eines ausgewählten Bereichs der oberen Elektrodenschicht (76), so daß die obere Elektroden schicht an dem ausgewählten Bereich eine zweite Dicke aufweist; und
Strukturieren der oberen Elektrodenschicht (76), um Re sonatoren zu bilden.
Maskieren der oberen Elektrodenschicht bis auf den aus gewählten Bereich (79) der oberen Elektrodenschicht Aussetzen der Maske und des ausgewählten Teils (79) ge genüber einem Ätzmittel; und
Entfernen der Maske.
Aufbringen einer unteren Elektrode (72) auf dem Sub strat;
Aufbringen einer piezoelektrischen (PZ-) Schicht (74);
Aufbringen einer oberen Elektrode (76), die eine erste Dicke aufweist; und
Reduzieren der Dicke der oberen Elektrode (76), um die Resonanzfrequenz des Resonators einzustellen.
Maskieren der oberen Elektrode (76) bis auf einen ausge wählten Bereich (79) der oberen Elektrode (76);
Aussetzen der Maske und des ausgewählten Bereichs (79) gegenüber einem Ätzmittel; und
Entfernen der Maske.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/799,205 | 2001-03-05 | ||
US09/799,205 US6874211B2 (en) | 2001-03-05 | 2001-03-05 | Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method |
Publications (3)
Publication Number | Publication Date |
---|---|
DE10207324A1 true DE10207324A1 (de) | 2002-09-26 |
DE10207324B4 DE10207324B4 (de) | 2009-04-09 |
DE10207324B8 DE10207324B8 (de) | 2009-07-30 |
Family
ID=25175291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10207324A Expired - Fee Related DE10207324B8 (de) | 2001-03-05 | 2002-02-21 | Verfahren zum Herstellen akustischer Dünnfilmvolumenresonatoren (FBARs) mit unterschiedlichen Frequenzen auf dem gleichen Substrat durch ein Subtraktionsverfahren und Vorrichtung, die das Verfahren beinhaltet |
Country Status (3)
Country | Link |
---|---|
US (1) | US6874211B2 (de) |
JP (1) | JP4008265B2 (de) |
DE (1) | DE10207324B8 (de) |
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WO2004055982A1 (en) * | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Electro-acoustic resonator |
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FR2853473B1 (fr) * | 2003-04-01 | 2005-07-01 | St Microelectronics Sa | Composant electronique comprenant un resonateur et procede de fabrication |
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US4161430A (en) * | 1978-12-04 | 1979-07-17 | Burroughs Corporation | Method of forming integrated circuit metal interconnect structure employing molybdenum on aluminum |
US4320365A (en) * | 1980-11-03 | 1982-03-16 | United Technologies Corporation | Fundamental, longitudinal, thickness mode bulk wave resonator |
US5587620A (en) * | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
US5559056A (en) * | 1995-01-13 | 1996-09-24 | National Semiconductor Corporation | Method and apparatus for capping metallization layer |
US6051907A (en) * | 1996-10-10 | 2000-04-18 | Nokia Mobile Phones Limited | Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS) |
US5780713A (en) * | 1996-11-19 | 1998-07-14 | Hewlett-Packard Company | Post-fabrication tuning of acoustic resonators |
US5894647A (en) * | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
WO1999037023A1 (fr) * | 1998-01-16 | 1999-07-22 | Mitsubishi Denki Kabushiki Kaisha | Element piezo-electrique a film mince |
US6060818A (en) * | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
US6307447B1 (en) * | 1999-11-01 | 2001-10-23 | Agere Systems Guardian Corp. | Tuning mechanical resonators for electrical filter |
US6306313B1 (en) * | 2000-02-04 | 2001-10-23 | Agere Systems Guardian Corp. | Selective etching of thin films |
-
2001
- 2001-03-05 US US09/799,205 patent/US6874211B2/en not_active Expired - Lifetime
-
2002
- 2002-02-21 DE DE10207324A patent/DE10207324B8/de not_active Expired - Fee Related
- 2002-03-04 JP JP2002057313A patent/JP4008265B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2002359534A (ja) | 2002-12-13 |
JP4008265B2 (ja) | 2007-11-14 |
DE10207324B8 (de) | 2009-07-30 |
DE10207324B4 (de) | 2009-04-09 |
US6874211B2 (en) | 2005-04-05 |
US20020121499A1 (en) | 2002-09-05 |
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