DE102017124871A8 - IGBT mit dV/dt-Steuerbarkeit - Google Patents

IGBT mit dV/dt-Steuerbarkeit Download PDF

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Publication number
DE102017124871A8
DE102017124871A8 DE102017124871.4A DE102017124871A DE102017124871A8 DE 102017124871 A8 DE102017124871 A8 DE 102017124871A8 DE 102017124871 A DE102017124871 A DE 102017124871A DE 102017124871 A8 DE102017124871 A8 DE 102017124871A8
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Prior art keywords
igbt
controllability
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DE102017124871.4A
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DE102017124871A1 (de
DE102017124871B4 (de
Inventor
Markus Bina
Matteo Dainese
Christian Jaeger
Johannes Georg Laven
Alexander Philippou
Francisco Javier Santos Rodriguez
Antonio Vellei
Caspar Leendertz
Christian Philipp Sandow
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Infineon Technologies AG
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Infineon Technologies AG
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Priority to DE102017124871.4A priority Critical patent/DE102017124871B4/de
Priority to CN201811229514.9A priority patent/CN109698230A/zh
Priority to US16/168,136 priority patent/US10840362B2/en
Priority to KR1020180127285A priority patent/KR102654978B1/ko
Priority to JP2018199657A priority patent/JP7412879B2/ja
Publication of DE102017124871A1 publication Critical patent/DE102017124871A1/de
Publication of DE102017124871A8 publication Critical patent/DE102017124871A8/de
Priority to US17/078,620 priority patent/US11581428B2/en
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Publication of DE102017124871B4 publication Critical patent/DE102017124871B4/de
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    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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CN201811229514.9A CN109698230A (zh) 2017-10-24 2018-10-22 具有dV/dt可控性的IGBT
US16/168,136 US10840362B2 (en) 2017-10-24 2018-10-23 IGBT with dV/dt controllability
JP2018199657A JP7412879B2 (ja) 2017-10-24 2018-10-24 ｄＶ／ｄｔ制御性を備えたＩＧＢＴ
KR1020180127285A KR102654978B1 (ko) 2017-10-24 2018-10-24 dV/dt 제어성을 가진 IGBT
US17/078,620 US11581428B2 (en) 2017-10-24 2020-10-23 IGBT with dV/dt controllability

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US20190123186A1 (en) 2019-04-25
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US11581428B2 (en) 2023-02-14
CN109698230A (zh) 2019-04-30
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US10840362B2 (en) 2020-11-17

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