DE10194628T1 - Gassammler bzw. Gaskollektor für einen Epitaxialreaktor - Google Patents

Gassammler bzw. Gaskollektor für einen Epitaxialreaktor

Info

Publication number
DE10194628T1
DE10194628T1 DE10194628T DE10194628T DE10194628T1 DE 10194628 T1 DE10194628 T1 DE 10194628T1 DE 10194628 T DE10194628 T DE 10194628T DE 10194628 T DE10194628 T DE 10194628T DE 10194628 T1 DE10194628 T1 DE 10194628T1
Authority
DE
Germany
Prior art keywords
gas collector
epitaxial reactor
collector
gas
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10194628T
Other languages
English (en)
Other versions
DE10194628B4 (de
Inventor
Roger S Sillmon
Khang V Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ITT Manufacturing Enterprises LLC
Original Assignee
ITT Manufacturing Enterprises LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ITT Manufacturing Enterprises LLC filed Critical ITT Manufacturing Enterprises LLC
Publication of DE10194628T1 publication Critical patent/DE10194628T1/de
Application granted granted Critical
Publication of DE10194628B4 publication Critical patent/DE10194628B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE10194628T 2000-08-09 2001-06-21 Gassammler für einen Epitaxiereaktor Expired - Fee Related DE10194628B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/635,268 2000-08-09
US09/635,268 US6325855B1 (en) 2000-08-09 2000-08-09 Gas collector for epitaxial reactors
PCT/US2001/019722 WO2002012588A1 (en) 2000-08-09 2001-06-21 Gas collector for epitaxial reactor

Publications (2)

Publication Number Publication Date
DE10194628T1 true DE10194628T1 (de) 2003-07-03
DE10194628B4 DE10194628B4 (de) 2006-06-29

Family

ID=24547109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10194628T Expired - Fee Related DE10194628B4 (de) 2000-08-09 2001-06-21 Gassammler für einen Epitaxiereaktor

Country Status (6)

Country Link
US (3) US6325855B1 (de)
JP (1) JP5124716B2 (de)
AU (1) AU2001268612A1 (de)
DE (1) DE10194628B4 (de)
TW (1) TWI265977B (de)
WO (1) WO2002012588A1 (de)

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US6803422B2 (en) * 1999-09-13 2004-10-12 Denki Kagaku Kogyo Kabushiki Kaisha Cross-copolymerized olefin/aromatic vinyl compound/diene copolymer and process for its production
US6666920B1 (en) * 2000-08-09 2003-12-23 Itt Manufacturing Enterprises, Inc. Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor
US6325855B1 (en) * 2000-08-09 2001-12-04 Itt Manufacturing Enterprises, Inc. Gas collector for epitaxial reactors
US6716289B1 (en) * 2000-08-09 2004-04-06 Itt Manufacturing Enterprises, Inc. Rigid gas collector for providing an even flow of gasses
DE10043599A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
AU2001283944A1 (en) * 2000-09-22 2002-04-02 Aixtron Ag Gas inlet mechanism for cvd-method and device
US20030092278A1 (en) * 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
EP3664131A3 (de) 2002-03-12 2020-08-19 Hamamatsu Photonics K. K. Substrattrennverfahren
CN1328002C (zh) 2002-03-12 2007-07-25 浜松光子学株式会社 加工对象物切割方法
TWI520269B (zh) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
US20050023260A1 (en) * 2003-01-10 2005-02-03 Shinya Takyu Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
EP1609559B1 (de) 2003-03-12 2007-08-08 Hamamatsu Photonics K. K. Laserstrahlbearbeitungsverfahren
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
US7402678B2 (en) * 2004-12-17 2008-07-22 3M Innovative Properties Company Multifunctional amine capture agents
DE102006042280A1 (de) * 2005-09-08 2007-06-06 IMRA America, Inc., Ann Arbor Bearbeitung von transparentem Material mit einem Ultrakurzpuls-Laser
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
KR100982987B1 (ko) * 2008-04-18 2010-09-17 삼성엘이디 주식회사 화학 기상 증착 장치
KR101004822B1 (ko) * 2008-04-18 2010-12-28 삼성엘이디 주식회사 화학 기상 증착 장치
KR200475462Y1 (ko) * 2009-03-27 2014-12-03 램 리써치 코포레이션 플라즈마 처리 장치의 교체 가능한 상부 챔버 섹션
KR200478069Y1 (ko) * 2009-09-10 2015-08-24 램 리써치 코포레이션 플라즈마 처리 장치의 교체가능한 상부 체임버 부품
US8163089B2 (en) * 2009-12-16 2012-04-24 Primestar Solar, Inc. Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate
US9234278B2 (en) * 2012-01-20 2016-01-12 Taiwan Semiconductor Manufacturing Co., Ltd. CVD conformal vacuum/pumping guiding design
KR20130115849A (ko) * 2012-04-13 2013-10-22 삼성전자주식회사 반도체 소자 제조 설비
KR102156795B1 (ko) * 2013-05-15 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
JP5941491B2 (ja) * 2014-03-26 2016-06-29 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにプログラム
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
CN108292588B (zh) * 2015-12-04 2022-02-18 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
CN214848503U (zh) * 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
CN112080733A (zh) * 2019-06-14 2020-12-15 东泰高科装备科技有限公司 尾气排放装置及真空镀膜***

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DE1667036A1 (de) 1967-01-02 1971-05-27 Bayer Ag Verfahren und Vorrichtung zum direkten elektrischen Erhitzen von Gasen oder gasfoermigen Stoffen
FR2628984B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a planetaire
FR2628985B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
FR2638020B1 (fr) 1988-10-14 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a collecteur de gaz ameliore
JP2745819B2 (ja) * 1990-12-10 1998-04-28 日立電線株式会社 気相膜成長装置
JP2662365B2 (ja) 1993-01-28 1997-10-08 アプライド マテリアルズ インコーポレイテッド 改良された排出システムを有する単一基板式の真空処理装置
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5895530A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Method and apparatus for directing fluid through a semiconductor processing chamber
US5846330A (en) 1997-06-26 1998-12-08 Celestech, Inc. Gas injection disc assembly for CVD applications
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
US6423949B1 (en) * 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6530992B1 (en) * 1999-07-09 2003-03-11 Applied Materials, Inc. Method of forming a film in a chamber and positioning a substitute in a chamber
US6582522B2 (en) * 2000-07-21 2003-06-24 Applied Materials, Inc. Emissivity-change-free pumping plate kit in a single wafer chamber
US6325855B1 (en) * 2000-08-09 2001-12-04 Itt Manufacturing Enterprises, Inc. Gas collector for epitaxial reactors
DE50103530D1 (de) 2000-12-06 2004-10-14 Trepel Airport Equipment Gmbh Rolleneinheit

Also Published As

Publication number Publication date
US20020017244A1 (en) 2002-02-14
US6325855B1 (en) 2001-12-04
US6676758B2 (en) 2004-01-13
JP2004506316A (ja) 2004-02-26
DE10194628B4 (de) 2006-06-29
AU2001268612A1 (en) 2002-02-18
WO2002012588A1 (en) 2002-02-14
JP5124716B2 (ja) 2013-01-23
US6478877B1 (en) 2002-11-12
TWI265977B (en) 2006-11-11

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