DE10066271B8 - Solarzelle - Google Patents

Solarzelle Download PDF

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Publication number
DE10066271B8
DE10066271B8 DE10066271.4A DE10066271A DE10066271B8 DE 10066271 B8 DE10066271 B8 DE 10066271B8 DE 10066271 A DE10066271 A DE 10066271A DE 10066271 B8 DE10066271 B8 DE 10066271B8
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DE
Germany
Prior art keywords
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10066271.4A
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English (en)
Other versions
DE10066271B4 (de
Inventor
Takayuki Negami
Yasuhiro Hashimoto
Shigeo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
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Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to DE10010177A priority Critical patent/DE10010177B4/de
Application granted granted Critical
Publication of DE10066271B4 publication Critical patent/DE10066271B4/de
Publication of DE10066271B8 publication Critical patent/DE10066271B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
DE10066271.4A 1999-03-05 2000-03-02 Solarzelle Expired - Fee Related DE10066271B8 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10010177A DE10010177B4 (de) 1999-03-05 2000-03-02 Solarzelle mit einer p-Typ Lichtabsorptionsschicht und einer Cd-freien n-Typ Schicht, die einen größeren Bandabstand und eine größere Elektronenaffinität aufweist

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5876899 1999-03-05
JP11-058768 1999-03-05

Publications (2)

Publication Number Publication Date
DE10066271B4 DE10066271B4 (de) 2013-11-21
DE10066271B8 true DE10066271B8 (de) 2014-03-20

Family

ID=13093738

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10066271.4A Expired - Fee Related DE10066271B8 (de) 1999-03-05 2000-03-02 Solarzelle
DE10010177A Expired - Fee Related DE10010177B4 (de) 1999-03-05 2000-03-02 Solarzelle mit einer p-Typ Lichtabsorptionsschicht und einer Cd-freien n-Typ Schicht, die einen größeren Bandabstand und eine größere Elektronenaffinität aufweist

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE10010177A Expired - Fee Related DE10010177B4 (de) 1999-03-05 2000-03-02 Solarzelle mit einer p-Typ Lichtabsorptionsschicht und einer Cd-freien n-Typ Schicht, die einen größeren Bandabstand und eine größere Elektronenaffinität aufweist

Country Status (2)

Country Link
US (1) US6259016B1 (de)
DE (2) DE10066271B8 (de)

Families Citing this family (50)

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GB2361480B (en) * 2000-04-19 2002-06-19 Murata Manufacturing Co Method for forming p-type semiconductor film and light emitting device using the same
JP4662616B2 (ja) 2000-10-18 2011-03-30 パナソニック株式会社 太陽電池
WO2002084708A2 (en) * 2001-04-16 2002-10-24 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
JP2002329877A (ja) * 2001-04-27 2002-11-15 National Institute Of Advanced Industrial & Technology Ｃｕ（Ｇａ及び（又は）Ｉｎ）Ｓｅ２薄膜層、Ｃｕ（ＩｎＧａ）（Ｓ、Ｓｅ）２薄膜層、太陽電池、Ｃｕ（Ｇａ及び（又は）Ｉｎ）Ｓｅ２薄膜層の形成方法
JPWO2003009394A1 (ja) * 2001-07-18 2004-11-11 本田技研工業株式会社 透明電極層の成膜方法および装置
GB0127113D0 (en) * 2001-11-10 2002-01-02 Univ Sheffield Copper indium based thin film photovoltaic devices and methods of making the same
US7019208B2 (en) * 2001-11-20 2006-03-28 Energy Photovoltaics Method of junction formation for CIGS photovoltaic devices
AU2003243467A1 (en) * 2002-06-11 2003-12-22 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon St Polycrystalline thin-film solar cells
JP2004158619A (ja) * 2002-11-06 2004-06-03 Matsushita Electric Ind Co Ltd 電子デバイスおよびその製造方法
US7479596B2 (en) * 2003-03-18 2009-01-20 Panasonic Corporation Solar cell and method for manufacturing the same
CN1771610A (zh) * 2003-04-09 2006-05-10 松下电器产业株式会社 太阳能电池
SE0301350D0 (sv) * 2003-05-08 2003-05-08 Forskarpatent I Uppsala Ab A thin-film solar cell
JP2005019742A (ja) * 2003-06-26 2005-01-20 Matsushita Electric Ind Co Ltd 太陽電池
JP4098330B2 (ja) * 2004-01-13 2008-06-11 松下電器産業株式会社 太陽電池とその製造方法
WO2005105944A1 (en) * 2004-04-02 2005-11-10 Midwest Research Institute ZnS/Zn(O, OH)S-BASED BUFFER LAYER DEPOSITION FOR SOLAR CELLS
JP2006013028A (ja) * 2004-06-24 2006-01-12 National Institute Of Advanced Industrial & Technology 化合物太陽電池及びその製造方法
US7196262B2 (en) * 2005-06-20 2007-03-27 Solyndra, Inc. Bifacial elongated solar cell devices
DE102005046908A1 (de) * 2005-09-30 2007-04-05 Merck Patent Gmbh Elektrochemische Abscheidung von Selen in ionischen Flüssigkeiten
DE102006039331C5 (de) * 2006-08-15 2013-08-22 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Photovoltaik-Dünnschichtaufbau und Herstellungsverfahren
KR101144807B1 (ko) 2007-09-18 2012-05-11 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
US20090084963A1 (en) * 2007-10-01 2009-04-02 David, Joseph And Negley Apparatus and methods to produce electrical energy by enhanced down-conversion of photons
WO2009057692A1 (ja) * 2007-10-30 2009-05-07 Sanyo Electric Co., Ltd. 太陽電池
WO2009110093A1 (ja) * 2008-03-07 2009-09-11 昭和シェル石油株式会社 Ｃｉｓ系太陽電池の集積構造
DE112008003756T5 (de) * 2008-03-07 2011-02-24 Showa Shell Sekiyu K.K. Stapelstruktur und integrierte Struktur einer Solarzelle auf CIS-Grundlage
US10211353B2 (en) * 2008-04-14 2019-02-19 Sunlight Photonics Inc. Aligned bifacial solar modules
FR2939240B1 (fr) * 2008-12-03 2011-02-18 Saint Gobain Element en couches et dispositif photovoltaique comprenant un tel element
JP5003698B2 (ja) * 2009-02-18 2012-08-15 Ｔｄｋ株式会社 太陽電池、及び太陽電池の製造方法
JP5287380B2 (ja) * 2009-03-13 2013-09-11 Ｔｄｋ株式会社 太陽電池、及び太陽電池の製造方法
US20110011443A1 (en) * 2009-07-17 2011-01-20 Sanyo Electric Co., Ltd. Solar battery module and manufacturing method thereof
KR20110023007A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 박막 태양 전지 및 이의 제조방법
KR101072089B1 (ko) 2009-09-30 2011-10-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
TWI514608B (zh) * 2010-01-14 2015-12-21 Dow Global Technologies Llc 具曝露式導電柵格之防溼光伏打裝置
TWI520367B (zh) * 2010-02-09 2016-02-01 陶氏全球科技公司 具透明導電阻擋層之光伏打裝置
CN102812558B (zh) * 2010-02-09 2015-09-09 陶氏环球技术有限责任公司 具有改善的屏障膜粘附的抗湿光伏器件
US8546176B2 (en) 2010-04-22 2013-10-01 Tsmc Solid State Lighting Ltd. Forming chalcogenide semiconductor absorbers
WO2012012700A1 (en) * 2010-07-23 2012-01-26 First Solar, Inc. Buffer layer formation
WO2012040299A2 (en) * 2010-09-22 2012-03-29 First Solar, Inc A thin-film photovoltaic device with a zinc magnesium oxide window layer
KR101283140B1 (ko) 2011-01-26 2013-07-05 엘지이노텍 주식회사 태양전지 및 이의 제조방법
WO2013034155A2 (en) * 2011-09-06 2013-03-14 Vesborg v/Peter Christian Kjærgaard Vesborg Collapsible photovoltaic module for a large-scale solar power plant
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP6265362B2 (ja) * 2012-02-27 2018-01-24 日東電工株式会社 Ｃｉｇｓ系化合物太陽電池
US9508874B2 (en) * 2012-03-09 2016-11-29 First Solar, Inc. Photovoltaic device and method of manufacture
JP2013229572A (ja) * 2012-03-26 2013-11-07 Toyota Central R&D Labs Inc 光電素子
JP6083785B2 (ja) 2012-08-24 2017-02-22 日東電工株式会社 化合物太陽電池およびその製造方法
US9853171B2 (en) * 2012-09-05 2017-12-26 Zinniatek Limited Photovoltaic devices with three dimensional surface features and methods of making the same
EP2921467B1 (de) * 2012-11-19 2019-02-06 Tosoh Corporation Oxidsinter, sputtertarget damit und oxidfolie
FR3006109B1 (fr) * 2013-05-24 2016-09-16 Commissariat Energie Atomique Procede de realisation de la jonction p-n d'une cellule photovoltaique en couches minces et procede d'obtention correspondant d'une cellule photovoltaique.
WO2015177899A1 (ja) 2014-05-22 2015-11-26 東芝三菱電機産業システム株式会社 バッファ層の成膜方法およびバッファ層
DE102014223485A1 (de) * 2014-11-18 2016-05-19 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Schichtaufbau für eine Dünnschichtsolarzelle und Herstellungsverfahren
DE102014224004A1 (de) * 2014-11-25 2016-05-25 crystalsol OÜ Elektronisches Bauteil mit Zwischenschicht zwischen n- und p-dotierter Halbleiterschicht

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Also Published As

Publication number Publication date
DE10010177A1 (de) 2000-09-14
US6259016B1 (en) 2001-07-10
DE10010177B4 (de) 2010-04-08
DE10066271B4 (de) 2013-11-21

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