SU511794A1 - Способ получени полупроводниковой светоизлучающей структуры - Google Patents
Способ получени полупроводниковой светоизлучающей структурыInfo
- Publication number
- SU511794A1 SU511794A1 SU1922832A SU1922832A SU511794A1 SU 511794 A1 SU511794 A1 SU 511794A1 SU 1922832 A SU1922832 A SU 1922832A SU 1922832 A SU1922832 A SU 1922832A SU 511794 A1 SU511794 A1 SU 511794A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- solution
- melt
- light emitting
- semiconductor light
- emitting structure
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 title description 2
- 239000000243 solution Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000000155 melt Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/018—Compensation doping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/066—Gp III-V liquid phase epitaxy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
Изобретекне откоситс к области электронной техники и может быть использован в техиологил светоизлучаюших приборов в системе твердых растворов галлий-алюмиНИЙ-ЫЫШЬЙК , Известон способ попученп структур ме тодом жидкостной эпитаксик в изометрическом процессе при изменении объема и состава раствора. Heдocтa, известного способа получени шл етс невозможность его непосред ственного использовани дл получени све излучающих структур с компенсированной активной областью и однороднь1М распределением алюмини в области рекомбинации. Цепью изобретени вл етс разработка конкретных технологических режимов получени компенсированного и однородного по составу СЛОЙ, обеспечивающего высокую эффективность излучательной рекомбинации. Это достигаетс тем., что пропесс вь} ращивани производитс при последователь, ной смене на подло ж.е из арсенида галли5{ двух растворов-расплавов, причем второй раствор-расплав, содержащий примесь донорного типа, надвигаетс так, что на подложке остаетс слой толщиной 2ОО-бООмкм первого раствора-расплава, содержащего одновременно донорные и акцепторные примеси. Образованный раствор выдерживаетс в течение 1-7 сек при посто нной температуре . Согласно описываемому способу получение светоизлучающей структуры проводитс методом жидкостной эпитаксии в графитовой кассете по способу сталкивающей технологии на подложке р-типа арсенида галли с ориен тацией (10 О). Состав шихты дл 1-го раствора-расплава: С,а (5,0+ 0,1) г, GaAs(480 + 40) мг, At(ll,6 + 0,4) мг, Zn(22 + 4) мг, Те (0,07 + 0,01) мг, дд 2-го раствора-расплава; GO (5,0+0,1) ) r,GoAs(580 + + 40) мг, АР (15,6 + 0,6) мг. Те (2, + 0,3) мг. Кассета с подложкой с раствором и расплавом помещаетс в кварцевый реактор, наход щийс в температурном поле с небольщим положительным ( 3 /см) вертикапьным градиентом. После достижени тем пературы 960 + 5 С и выдержки при этой температуре в течение 30 мин первый раствор расплав подвигаетс на подлож- ку и при снижении температуры со скорост 0,5-2°С/мин производитс выращктвание первого р-сло . Через 50 мин производитс надвиг второго раствора-расплава, прич что предусмотрено констр тсцией кассеты, слой первого раствора-расплава толш.иной 200-600 мкм остаетс на подлолже. Образованный раствор выдерживаетс п посто нной температуре в течение 1-7 сек при этом происходит рост компенсированной р-активной области толщиной 1-2 мкм При последующем снижении температуры растут п, п и . В конце процесса раствор-расплав удал етс с подложки. Полученна структура имеет эффективность излучени на длине волны ббО690 им до 5%. Фор м у л а и 3 о б р е т е н и Способ получени полупроводниковой св тоизлучаюший структуры,содержащей зпн4 таксиальные слои на основе твердых растворов в системе &аАб-А.б ,путем изотермического смешивани двух растворов-расплавов , содержащих донорные и акцепторные примеси, при резком изменении объема расплава , наход щегос на подложке из арсенида галли , отличающийс тем, что, с целью обеспечени еличени эффективности излучательной рекомбинации за счет создани однородной по составу компенсированной активной области, выращивание активной области ведут при надвиге раствора-расплава, содержащего регулирующую примесь 1ъ типа, нагфимер, теллур, на слой первого раствора-расплава толшиной 200-600 мкм, содержащий одновременно донорные и акцепторные лримеси, пагфимер, теллур и иикк и последующей вь;держкой на подложке образованного раствора-расплава , 2. Способ по п. 1,отличающийс том, что врем выдержки образовани раствора-расплавана подложке составл ет 1-7 сек.
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1922832A SU511794A1 (ru) | 1973-05-28 | 1973-05-28 | Способ получени полупроводниковой светоизлучающей структуры |
DD17810074A DD110582A1 (ru) | 1973-05-28 | 1974-04-24 | |
CH568174A CH571770A5 (ru) | 1973-05-28 | 1974-04-25 | |
IN943/CAL/74A IN139101B (ru) | 1973-05-28 | 1974-04-25 | |
FR7414864A FR2232169B1 (ru) | 1973-05-28 | 1974-04-29 | |
DE19742420741 DE2420741C2 (de) | 1973-05-28 | 1974-04-29 | Herstellungsverfahren für eine Leuchtdiode |
US05/466,505 US3958265A (en) | 1973-05-28 | 1974-05-02 | Semiconductor light-emitting diode and method for producing same |
GB1936374A GB1474942A (en) | 1973-05-28 | 1974-05-02 | Semiconductor light-emitting diode device and method for producing same |
CA199,585A CA1017436A (en) | 1973-05-28 | 1974-05-09 | Semiconductor light-emitting diode and method for producing same |
IT4139374A IT1043910B (it) | 1973-05-28 | 1974-05-10 | Dispositivo semiconduttore a diodo di radiazione luminosa e procedimento per la sua produzione |
CS353174A CS172632B1 (ru) | 1973-05-28 | 1974-05-17 | |
US05/639,199 US4001055A (en) | 1973-05-28 | 1975-12-09 | Semiconductor light-emitting diode and method for producing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1922832A SU511794A1 (ru) | 1973-05-28 | 1973-05-28 | Способ получени полупроводниковой светоизлучающей структуры |
Publications (1)
Publication Number | Publication Date |
---|---|
SU511794A1 true SU511794A1 (ru) | 1976-10-05 |
Family
ID=20553887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU1922832A SU511794A1 (ru) | 1973-05-28 | 1973-05-28 | Способ получени полупроводниковой светоизлучающей структуры |
Country Status (3)
Country | Link |
---|---|
US (1) | US3958265A (ru) |
IN (1) | IN139101B (ru) |
SU (1) | SU511794A1 (ru) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4001055A (en) * | 1973-05-28 | 1977-01-04 | Charmakadze Revaz A | Semiconductor light-emitting diode and method for producing same |
US4055443A (en) * | 1975-06-19 | 1977-10-25 | Jury Stepanovich Akimov | Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating |
JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
US4021834A (en) * | 1975-12-31 | 1977-05-03 | The United States Of America As Represented By The Secretary Of The Army | Radiation-resistant integrated optical signal communicating device |
US4141756A (en) * | 1977-10-14 | 1979-02-27 | Honeywell Inc. | Method of making a gap UV photodiode by multiple ion-implantations |
US4216485A (en) * | 1978-09-15 | 1980-08-05 | Westinghouse Electric Corp. | Optical transistor structure |
US4319937A (en) * | 1980-11-12 | 1982-03-16 | University Of Illinois Foundation | Homogeneous liquid phase epitaxial growth of heterojunction materials |
US4376946A (en) * | 1980-11-28 | 1983-03-15 | Bell Telephone Laboratories, Incorporated | Superluminescent LED with efficient coupling to optical waveguide |
US4477824A (en) * | 1982-03-04 | 1984-10-16 | At&T Bell Laboratories | Light emitting device for optical switching |
DE102016013541A1 (de) * | 2016-11-14 | 2018-05-17 | 3 - 5 Power Electronics GmbH | lll-V-Halbleiterdiode |
DE102016013540A1 (de) * | 2016-11-14 | 2018-05-17 | 3 - 5 Power Electronics GmbH | lll-V-Halbleiterdiode |
DE102017011878A1 (de) * | 2017-12-21 | 2019-06-27 | 3-5 Power Electronics GmbH | Stapelförmiges III-V-Halbleiterbauelement |
-
1973
- 1973-05-28 SU SU1922832A patent/SU511794A1/ru active
-
1974
- 1974-04-25 IN IN943/CAL/74A patent/IN139101B/en unknown
- 1974-05-02 US US05/466,505 patent/US3958265A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
IN139101B (ru) | 1976-05-08 |
US3958265A (en) | 1976-05-18 |
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