CN85100507A - Modifed lead barium sodium niobate piezoelectric ceramic material - Google Patents
Modifed lead barium sodium niobate piezoelectric ceramic material Download PDFInfo
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- CN85100507A CN85100507A CN85100507A CN85100507A CN85100507A CN 85100507 A CN85100507 A CN 85100507A CN 85100507 A CN85100507 A CN 85100507A CN 85100507 A CN85100507 A CN 85100507A CN 85100507 A CN85100507 A CN 85100507A
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- China
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- weight
- modifed
- displacement
- piezoelectric ceramic
- sodium niobate
- Prior art date
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- PILOURHZNVHRME-UHFFFAOYSA-N [Na].[Ba] Chemical compound [Na].[Ba] PILOURHZNVHRME-UHFFFAOYSA-N 0.000 title claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000011734 sodium Substances 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 229910000906 Bronze Inorganic materials 0.000 claims abstract description 4
- 239000010974 bronze Substances 0.000 claims abstract description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 239000010937 tungsten Substances 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 abstract description 19
- 239000010955 niobium Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- 238000012986 modification Methods 0.000 abstract description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052758 niobium Inorganic materials 0.000 abstract description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002999 depolarising effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- Compositions Of Oxide Ceramics (AREA)
Abstract
The present invention belongs to tungsten bronze type modification niobium acid lead titanate sodium piezoelectric stupalith.This materials chemistry formula is
Wherein M is the tetravalent metal element, replaces part Nb element as Zr, Ti etc., x=0.5～0.9, and y=0.03～0.5, θ=0～1.5, η=0.1～2 preferentially recommends composition to contain PbO26～36% (weight), Na
2O, Li
2O1～3% (weight).This material characteristics is that manufacturing process is simple, and good reproducibility has higher coercive field, strong with the high anti-depolarising ability that exchanges, and its displacement basic time zero, is applicable to high accuracy piezoelectric micromotor potentiometer with the variation good linearity of voltage.
Description
The invention relates to tungsten bronze type modification niobium acid lead titanate sodium piezoelectric stupalith.
Utilize piezoceramic material can produce the characteristic of certain displacement corresponding to a certain applied voltage, can make piezoelectric actuator, as the fine motion control of laser mirror, laser interferometer, automatically controlled distorting lens, the driver that large scale integrated circuit is used exposure machine micro displacement workbench.Yet, the relation of displacement and voltage is different because of the piezoceramic material prescription, " soft " material that displacement is bigger in general, the phenomenon that displacement lags behind voltage is serious, displacement is the two-valued function of voltage, form a loop line that does not seal, thereby same magnitude of voltage correspondence different displacements, displacement did not return zero when voltage returned zero.United States Patent (USP) 4,263,527th adopts the method for modification control circuit to reduce hysteresis effect, rather than sets about from improving the ceramic material prescription.The method of this control circuit often causes complex structure though can reach the purpose that reduces to lag behind, and brings and makes complexity, and problems such as use inconvenience also increase the cost of manufacturing; Less " rigid " material of another kind of displacement though the displacement hysteresis is less, still forms less loop line, has influenced the use in the high accuracy field.
The objective of the invention is to set about providing a kind of displacement to be linear substantially with change in voltage from improving the piezoelectric ceramic prescription, it is very little to lag behind, and displacement in time, the electric field strength variation is all stablized and manufacturing process is simple, " rigid " piezoceramic material of good reproducibility.
Piezoceramic material provided by the invention, chemical formula is
Wherein M represents the tetravalent metal element, as Zr, Ti etc.,
x＝0.5～0.9，y＝0.03～0.5，θ＝0～1.5，η＝0.1～2。
Crystal structure belongs to tungsten bronze type, be characterized in lead tolerance than lead zirconate titanate ceramic few half, during sintering without any need for the measure that prevents plumbous volatilization.
Piezoceramic material technology provided by the invention manufacturing is simple, after partly replacing Nb, can enlarge sintering range and dense sintering (can than the low about 100 ℃ of sintering temperatures of general lead zirconate titanate) at a lower temperature with metallic elements such as Zr, Ti.The preferential composition of recommending of the present invention is PbO26～36%(weight), Na
2O, Li
2O1～3%(weight), MO
21～5%(weight).
Material coercive field provided by the invention is high by force, and room temperature can reach 1800v/mm, though the polarization condition harshness, after polarization fully, anti-interchange depolarising ability is also strong, and room temperature is 800v/mm in the time of 150 ℃ greater than 1000v/mm.Its dielectric coefficient ε
T 33Be 1100, tg δ 0.5% and also change with temperature, electric field strength more smooth, K
p=0.34, K
t=0.44, d
33180 * 10
-12M/v is rigid piezoelectric.
Advantage of the present invention is that the displacement of material is linear substantially with the variation of voltage, as shown in Figure 1.Abscissa is a voltage among the figure, ordinate is displacement, frequency 0.01HZ/S, when figure can find out that voltage returns zero, displacement also returned zero substantially, to the maximum deviation of straight line in 1～2%, returning the general piezoelectric ceramic of zero problem is greatly improved, response is fast, creep is little, even electric field strength is also stable up to the 1600v/mm displacement, is suitable as the high accuracy piezoelectric actuator.The piezoelectric actuator driving exposure machine micro displacement workbench displacement sensitivity made from it can reach 0.04 μ m, positioning accuracy ± 0.02 μ m, and repeatability error is less than 0.01 μ m.
Embodiments of the invention are to contain PbO35.12%(weight), BaO6.03%(weight), Na
2O, Li
2O 1.91%(weight), MO
21.75%(weight), all the other compositions are Nb
2O
3By the said components batching, the alcohol wet mixing is after 10～15 hours, and infrared lamp is dried, and it is synthetic to sieve, and synthesis condition is 800 ℃, carries out levigate compressing tablet again, can burn till at 1190 times.
Claims (4)
1, a kind of piezoceramic material that belongs to the tungsten bronze type Modifed lead barium sodium niobate is characterized in that chemical formula is
Wherein M is tetravalent metal element such as Zr, Ti etc., replaces part Nb element,
X=0.5～0.9，y=0.03～0.5，θ=0～1.5，ι=0.1～2
2, by the described piezoelectricity pottery of claim 1 helium material, it is characterized in that the preferential PbO content of recommending is 26～36%(weight).
3,, it is characterized in that the preferential Na that recommends by the described piezoceramic material of claim 1
2O, Li
2O content is 1～3%(weight).
4,, it is characterized in that the preferential MO that recommends by the described piezoceramic material of claim 1
2The content of (M is Zr, Ti etc.) is 1～5%(weight).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN85100507A CN85100507B (en) | 1985-04-01 | 1985-04-01 | Modifed lead barium sodium niobate piezoelectric ceramic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN85100507A CN85100507B (en) | 1985-04-01 | 1985-04-01 | Modifed lead barium sodium niobate piezoelectric ceramic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN85100507A true CN85100507A (en) | 1986-08-13 |
| CN85100507B CN85100507B (en) | 1987-11-11 |
Family
ID=4791216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN85100507A Expired CN85100507B (en) | 1985-04-01 | 1985-04-01 | Modifed lead barium sodium niobate piezoelectric ceramic material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN85100507B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1064941C (en) * | 1995-11-14 | 2001-04-25 | 株式会社村田制作所 | Piezoelectric ceramics compositions |
| CN1087721C (en) * | 1998-02-18 | 2002-07-17 | 株式会社村田制作所 | Piezoelectric ceramic composition |
| CN1089736C (en) * | 1998-02-18 | 2002-08-28 | 株式会社村田制作所 | Piezoelectric ceramic composition |
| CN1934659B (en) * | 2004-03-29 | 2010-11-24 | 日本化学工业株式会社 | Inorganic dielectric powder for composite dielectric material and composite dielectric material |
| CN101538159B (en) * | 2009-04-11 | 2011-11-09 | 桂林工学院 | Microwave dielectric ceramic with medium dielectric constant sintered at low temperature and preparation method thereof |
| CN102549790A (en) * | 2009-09-30 | 2012-07-04 | 佳能株式会社 | Piezolectric material comprising tungsten bronze structure metal oxide |
| CN104584247A (en) * | 2012-08-27 | 2015-04-29 | 佳能株式会社 | Piezoelectric material |
| CN112745121A (en) * | 2021-01-14 | 2021-05-04 | 中国科学院上海硅酸盐研究所 | Reverse light scattering transparent ceramic capable of realizing light path on-off and application thereof |
-
1985
- 1985-04-01 CN CN85100507A patent/CN85100507B/en not_active Expired
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1064941C (en) * | 1995-11-14 | 2001-04-25 | 株式会社村田制作所 | Piezoelectric ceramics compositions |
| CN1087721C (en) * | 1998-02-18 | 2002-07-17 | 株式会社村田制作所 | Piezoelectric ceramic composition |
| CN1089736C (en) * | 1998-02-18 | 2002-08-28 | 株式会社村田制作所 | Piezoelectric ceramic composition |
| CN1934659B (en) * | 2004-03-29 | 2010-11-24 | 日本化学工业株式会社 | Inorganic dielectric powder for composite dielectric material and composite dielectric material |
| CN101538159B (en) * | 2009-04-11 | 2011-11-09 | 桂林工学院 | Microwave dielectric ceramic with medium dielectric constant sintered at low temperature and preparation method thereof |
| CN102549790A (en) * | 2009-09-30 | 2012-07-04 | 佳能株式会社 | Piezolectric material comprising tungsten bronze structure metal oxide |
| CN102549790B (en) * | 2009-09-30 | 2015-07-22 | 佳能株式会社 | Piezoelectric material, piezoelectric device, drainage head and ultrasonic motor |
| CN104584247A (en) * | 2012-08-27 | 2015-04-29 | 佳能株式会社 | Piezoelectric material |
| CN104584247B (en) * | 2012-08-27 | 2017-04-12 | 佳能株式会社 | Piezoelectric material |
| US9768375B2 (en) | 2012-08-27 | 2017-09-19 | Canon Kabushiki Kaisha | Piezoelectric material, piezoelectric element, multilayered piezoelectric element, manufacturing method for multilayered piezoelectric element, liquid discharge head, liquid discharge device, ultrasonic motor, optical device, vibration device, dust removing device, imaging device, and electronic device |
| CN112745121A (en) * | 2021-01-14 | 2021-05-04 | 中国科学院上海硅酸盐研究所 | Reverse light scattering transparent ceramic capable of realizing light path on-off and application thereof |
| CN112745121B (en) * | 2021-01-14 | 2022-05-10 | 中国科学院上海硅酸盐研究所 | Reverse light scattering transparent ceramic capable of realizing light path on-off and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN85100507B (en) | 1987-11-11 |
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