CN221262382U - Gallium nitride grid voltage-withstanding structure and gallium nitride device - Google Patents
Gallium nitride grid voltage-withstanding structure and gallium nitride device Download PDFInfo
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- CN221262382U CN221262382U CN202322983585.0U CN202322983585U CN221262382U CN 221262382 U CN221262382 U CN 221262382U CN 202322983585 U CN202322983585 U CN 202322983585U CN 221262382 U CN221262382 U CN 221262382U
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 115
- 238000003780 insertion Methods 0.000 claims abstract description 44
- 230000037431 insertion Effects 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 22
- 230000002708 enhancing effect Effects 0.000 claims abstract description 12
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 21
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 230000010485 coping Effects 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
The utility model provides a gallium nitride grid voltage-resistant structure and a gallium nitride device, and relates to the technical field of gallium nitride devices, wherein the gallium nitride grid voltage-resistant structure comprises the following components: a gallium nitride structure for forming a two-dimensional electron gas; the grid dielectric structure is arranged on the gallium nitride structure and comprises at least one laminated dielectric layer and at least one insert layer; the grid metal piece is arranged on the grid dielectric structure to form ohmic connection or Schottky connection; the dielectric layer is used for consuming electrons of two-dimensional electron gas, and the insertion layer is used for enhancing the withstand voltage between the grid metal piece and the gallium nitride structure. The gate dielectric structure further comprises an insertion layer, the insertion layer is positioned between the gate metal piece and the gallium nitride structure, the insertion layer enables breakdown voltage of the gate metal piece and the gallium nitride structure to be increased, the effect of enhancing gate withstand voltage is achieved, and the gate dielectric structure is favorable for coping with peak voltage in the use process and improves reliability.
Description
Technical Field
The utility model relates to the technical field of gallium nitride devices, in particular to a gallium nitride gate voltage-withstanding structure and a gallium nitride device.
Background
Gallium nitride (GaN) devices have many advantages over silicon devices, such as higher electron mobility, higher saturation drift velocity, and better thermal characteristics, and are widely used in high frequency, high power electronics applications.
However, in the existing enhancement gallium nitride devices, such as enhancement gallium nitride high electron mobility transistors (GaN HEMTs), the common breakdown voltage of the gate is about 10V, which has the problem of low withstand voltage, and in practical application, there is a certain breakdown risk for coping with voltage fluctuation and spike voltage generated during level switching, and the reliability is low.
Disclosure of utility model
The utility model provides a gallium nitride gate voltage-withstanding structure and a gallium nitride device, which are used for solving the defect of lower gate voltage-withstanding in the prior art and achieving the effect of enhancing the gate voltage-withstanding performance.
The utility model provides a gallium nitride grid voltage-resistant structure, which comprises:
a gallium nitride structure for forming a two-dimensional electron gas;
The grid dielectric structure is arranged on the gallium nitride structure and comprises at least one dielectric layer and at least one inserting layer which are stacked;
The grid metal piece is arranged on the grid dielectric structure to form ohmic connection or Schottky connection;
The dielectric layer is used for consuming electrons of the two-dimensional electron gas, and the insertion layer is used for enhancing the pressure resistance between the grid metal piece and the gallium nitride structure.
According to the gallium nitride gate voltage-resistant structure provided by the utility model, the dielectric layers are multi-layered, and the dielectric layers and the insertion layers are stacked in a staggered manner.
According to the gallium nitride grid voltage-resistant structure provided by the utility model, the number of the insertion layers is equal to that of the dielectric layers;
The bottom layer of the grid dielectric structure is the dielectric layer and the top layer is the insertion layer;
Or the bottom layer of the gate dielectric structure is the insertion layer and the top layer is the dielectric layer.
According to the gallium nitride gate voltage-withstanding structure provided by the utility model, the insertion layer is an intrinsic gallium nitride layer or an intrinsic aluminum gallium nitride layer.
According to the gallium nitride gate voltage-withstanding structure provided by the utility model, the insertion layer is an N-type doped layer, the dielectric layer is a P-type gallium nitride layer, at least one N-type doped layer is positioned on the P-type gallium nitride layer, and PN junctions are formed between adjacent N-type doped layers and the P-type gallium nitride layer.
According to the gallium nitride gate voltage-withstanding structure provided by the utility model, the N-type doped layer is an N-type gallium nitride layer or an N-type aluminum gallium nitride layer.
According to the gallium nitride grid voltage-resistant structure provided by the utility model, the gallium nitride structure comprises a gallium nitride channel layer and an aluminum gallium nitride barrier layer, the two-dimensional electron gas is formed between the gallium nitride channel layer and the aluminum gallium nitride barrier layer, and the grid dielectric structure is arranged on the aluminum gallium nitride barrier layer.
According to the gallium nitride gate voltage-withstanding structure provided by the utility model, the gallium nitride gate voltage-withstanding structure further comprises an aluminum nitride cap layer or a gallium nitride cap layer arranged between the aluminum gallium nitride barrier layer and the gate dielectric structure.
According to the gallium nitride gate voltage-resistant structure provided by the utility model, the gallium nitride gate voltage-resistant structure further comprises a passivation layer arranged on the gate dielectric structure, and the passivation layer surrounds the periphery of the gate metal piece.
The utility model also provides a gallium nitride device, which comprises the gallium nitride gate voltage-resistant structure and further comprises a drain electrode piece and a source electrode piece which are arranged on the gallium nitride structure.
The gallium nitride gate voltage-resistant structure and the gallium nitride device provided by the utility model have at least the following beneficial effects: the two-dimensional electron gas formed by the gallium nitride structure can be used as a conductive channel, a dielectric layer in the grid dielectric structure consumes electrons of the two-dimensional electron gas, so that the conductive channel is cut off in a normal state, and when a voltage is applied to a grid metal piece, the formed electric field can drive electrons to be supplemented to the two-dimensional electron gas, so that the conductive channel is conducted. The gate dielectric structure further comprises an insertion layer, the insertion layer is positioned between the gate metal piece and the gallium nitride structure, the insertion layer enables breakdown voltage of the gate metal piece and the gallium nitride structure to be increased, the effect of enhancing gate withstand voltage is achieved, and the gate dielectric structure is favorable for coping with peak voltage in the use process and improves reliability.
Drawings
In order to more clearly illustrate the utility model or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the utility model, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of one embodiment of a gan gate voltage-withstanding structure according to the present utility model;
Fig. 2 is a schematic diagram of another embodiment of a gan gate voltage-withstanding structure according to the present utility model.
Reference numerals:
A gallium nitride structure 100; a gallium nitride channel layer 110; an aluminum gallium nitride barrier layer 120; a gate dielectric structure 200; a dielectric layer 210; an interposer 220; gate metal 300; an aluminum nitride cap layer 410; a gallium nitride cap layer 420; passivation layer 500.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, the technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
A gallium nitride gate voltage-resistant structure of the present utility model is described below with reference to fig. 1-2, including:
a gallium nitride structure 100, the gallium nitride structure 100 being for forming a two-dimensional electron gas;
A gate dielectric structure 200, wherein the gate dielectric structure 200 is disposed on the gallium nitride structure 100, and the gate dielectric structure 200 includes at least one dielectric layer 210 and at least one insertion layer 220;
A gate metal 300, where the gate metal 300 is disposed on the gate dielectric structure 200 to form an ohmic connection or a schottky connection;
The dielectric layer 210 is used for consuming electrons of the two-dimensional electron gas, and the insertion layer 220 is used for enhancing the voltage resistance between the gate metal 300 and the gallium nitride structure 100.
The two-dimensional electron gas formed by the gallium nitride structure 100 can be used as a conductive channel, the dielectric layer 210 in the gate dielectric structure 200 consumes electrons of the two-dimensional electron gas, so that the conductive channel is cut off in a normal state, and when the gate metal piece 300 is applied with a voltage, the formed electric field can drive electrons to be supplemented to the two-dimensional electron gas, so that the conductive channel is conducted. The gate dielectric structure 200 further comprises an insertion layer 220, the insertion layer 220 is located between the gate metal piece 300 and the gallium nitride structure 100, the insertion layer 220 enables breakdown voltage of the gate metal piece 300 and the gallium nitride structure 100 to be increased, the effect of enhancing gate withstand voltage is achieved, and the method is beneficial to coping with peak voltage in the use process and improves reliability.
In some embodiments of the present utility model, the dielectric layer 210 is a P-type gan layer. The P-type material doped in the P-type gallium nitride layer can be magnesium, zinc and other materials, and a hole generated by doping can be combined with an electron so as to achieve the effect of consuming the electron in the two-dimensional electron gas.
Dielectric layer 210 may also be an implementation of other P-doped layers.
By adding the insertion layer 220 between the gate metal 300 and the gan structure 100, the insertion layer 220 must be broken down when the voltage is applied to the gate metal 300, so that the breakdown voltage between the gate metal 300 and the gan structure 100 can be increased by adding the insertion layer 220, thereby enhancing the voltage-withstanding performance.
Referring to fig. 1 and 2, in some embodiments of a gan gate voltage-resistant structure of the present utility model, the dielectric layer 210 has a plurality of layers, and the dielectric layer 210 is stacked with the interposer 220 in a staggered manner.
The structure in which the plurality of dielectric layers 210 and the insertion layer 220 are stacked in a staggered manner can be understood that the plurality of insertion layers 220 are inserted into the dielectric layer 210, and the multi-layer insertion layer 220 can adjust the concentration distribution of the doping ions in the dielectric layer 210, so that the reduction of the gate withstand voltage caused by the local concentration of the doping ions in the dielectric layer 210 is avoided, and the further enhancement of the gate withstand voltage is facilitated.
When the dielectric layer 210 is a P-type gallium nitride layer using magnesium as a doping material, the multi-layer insertion layer 220 can adjust the magnesium ion concentration in the P-type gallium nitride layer, so as to achieve the effect of enhancing the voltage-withstanding performance of the gate.
Referring to fig. 1 and 2, in some embodiments of a gan gate voltage-resistant structure of the present utility model, the number of the insertion layers 220 is equal to the number of the dielectric layers 210;
The bottom layer of the gate dielectric structure 200 is the dielectric layer 210 and the top layer is the interposer layer 220;
or the bottom layer of the gate dielectric structure 200 is the interposer 220 and the top layer is the dielectric layer 210.
When the number of the inserting layers 220 is equal to the number of the dielectric layers 210, there are two structures, wherein one is that the bottom layer is the dielectric layer 210 connected with the gallium nitride structure 100, and the top layer is that the inserting layers 220 are connected with the gate metal 300; the other is that the bottom layer is an insertion layer 220 connected with the gallium nitride structure 100, the top layer is a dielectric layer 210 connected with the gate metal 300, and the two structures can be specifically selected according to actual requirements.
In some embodiments of the present utility model, the number of the insertion layers 220 and the number of the dielectric layers 210 may be different, and the number of the dielectric layers 210 may be one more than the number of the insertion layers 220, where the bottom layer and the top layer of the gate dielectric structure 200 are both the dielectric layers 210; it is also possible to have one more intervening layer 220 than dielectric layer 210, where both the bottom and top layers of gate dielectric structure 200 are intervening layers 220.
Referring to fig. 1, in some embodiments of a gan gate withstand voltage structure of the present utility model, the insertion layer 220 is an intrinsic gan layer or an intrinsic aigan layer.
The insertion layer 220 is an intrinsic gallium nitride layer or an intrinsic aluminum gallium nitride layer, i.e. an undoped gallium nitride layer or an undoped aluminum gallium nitride layer, which is favorable for simplifying the production process, and does not need to perform doping operation on the insertion layer 220, and meanwhile, the insertion layer 220 can adjust the concentration distribution of doped ions in the dielectric layer 210, so that the local concentration of the doped ions is avoided, and the effect of enhancing the pressure resistance is achieved.
When the dielectric layer 210 is a P-type gallium nitride layer and the insertion layer 220 is an intrinsic gallium nitride layer, both are made of gallium nitride material, and only the dielectric layer 210 needs to be doped, so that lattice matching between the dielectric layer 210 and the insertion layer 220 is ensured, and structural strength is improved, so that performance is better and stable.
In some embodiments of the present utility model, when gate dielectric structure 200 includes a plurality of intrinsic aluminum gallium nitride layers, the aluminum (Al) content of each intrinsic aluminum gallium nitride layer is uniform.
Referring to fig. 2, in some embodiments of a gan gate voltage-withstanding structure according to the present utility model, the insertion layer 220 is an N-doped layer, the dielectric layer 210 is a P-doped layer, at least one N-doped layer is located on the P-doped layer, and a PN junction is formed between adjacent N-doped layers and the P-doped layer.
When the insertion layer 220 is an N-doped layer, on the basis of adjusting the concentration of doped ions in the P-type gallium nitride layer, a PN junction is formed between the N-doped layer and the P-type gallium nitride layer, and the PN junction can be equivalently regarded as a diode, and at least one N-doped layer is located on the P-type gallium nitride layer, that is, at least one diode equivalent to the PN junction is reversely connected in series between the gate metal 300 and the gallium nitride structure 100, so that the breakdown voltage between the gate metal 300 and the gallium nitride structure 100 can be improved, and the effect of further enhancing the voltage-resistant performance is achieved.
In the embodiment of the plurality of dielectric layers 210 and the plurality of interposer layers 220, a plurality of PN junctions are formed between the plurality of N-doped layers and the plurality of P-type gallium nitride layers, wherein the effect of the equivalent forward series PN junction on the withstand voltage enhancement is negligible, and the main effect of the equivalent reverse series PN junction on the withstand voltage enhancement is mainly enhanced.
Referring to fig. 2, in some embodiments of a gan gate voltage-withstanding structure of the present utility model, the N-doped layer is an N-type gan layer or an N-type aluminum-gallium-nitride layer.
The N-type doped layer is an N-type gallium nitride layer or an N-type aluminum gallium nitride layer, has good lattice adaptation with the P-type gallium nitride layer, and is favorable for improving the structural strength and ensuring better and stable performance.
In some embodiments of the present utility model, when gate dielectric structure 200 includes multiple N-type aluminum gallium nitride layers, each N-type aluminum gallium nitride layer has a uniform aluminum content.
By adjusting the doping concentration and thickness of the N-type doped layer, the voltage resistance between the gate metal 300 and the gan structure 100 can be adjusted, and the design can be performed according to practical requirements.
Referring to fig. 1 and 2, in some embodiments of a gallium nitride gate voltage-resistant structure of the present utility model, the gallium nitride structure 100 includes a gallium nitride channel layer 110 and an aluminum gallium nitride barrier layer 120, the two-dimensional electron gas is formed between the gallium nitride channel layer 110 and the aluminum gallium nitride barrier layer 120, and the gate dielectric structure 200 is disposed on the aluminum gallium nitride barrier layer 120.
The GaN channel layer 110 and the GaN barrier layer 120 form a heterojunction at a contact location, and since the GaN material has a wider band gap than the GaN material, when the heterojunction reaches equilibrium, the energy band at the junction of the heterojunction bends, resulting in discontinuity of the conduction band and the valence band, and a triangle-shaped potential well is formed at the interface of the heterojunction, a large amount of electrons are accumulated in the triangle-shaped potential well. At the same time, the wide band gap AlGaN barrier layer 120 has a high barrier on one side, so that electrons are difficult to surmount the potential well, and the electrons are limited to move transversely in a thin layer of the interface, namely a two-dimensional electron gas (2 DEG). The two-dimensional electron gas is formed by the gallium nitride channel layer 110 and the aluminum gallium nitride barrier layer 120, and has an advantage of high electron mobility.
Referring to fig. 1 and 2, in some embodiments of a gan gate voltage-resistant structure of the present utility model, an aluminum nitride cap layer 410 or a gan cap layer 420 is further included between the gan barrier layer 120 and the gate dielectric structure 200.
By disposing the aluminum nitride cap layer 410 or the gallium nitride cap layer 420 between the aluminum nitride barrier layer 120 and the gate dielectric structure 200, the underlying aluminum nitride barrier layer 120 can be protected, and the influence of the external environment on the aluminum nitride barrier layer 120, such as oxidation, humidity, etc., is reduced, which is beneficial to improving the stability of the performance of the aluminum nitride barrier layer 120 and the gallium nitride channel layer 110.
Referring to fig. 1 and 2, in some embodiments of a gan gate voltage-resistant structure of the present utility model, the passivation layer 500 is further disposed on the gate dielectric structure 200, and the passivation layer 500 surrounds the periphery of the gate metal 300.
By providing a passivation layer 500 on top of the gate dielectric structure 200, it is advantageous to protect the gate metal 300 and the underlying gate dielectric structure 200.
The utility model also provides a gallium nitride device, which comprises the gallium nitride gate voltage-resistant structure and further comprises a drain electrode piece and a source electrode piece which are arranged on the gallium nitride structure 100.
The gallium nitride structure 100 forms two-dimensional electron gas, the gallium nitride structure 100 is provided with a drain electrode part and a source electrode part, current can be transmitted between the drain electrode part and the source electrode part through a conductive channel formed by the two-dimensional electron gas, the gate metal part 300 is connected with the gallium nitride structure 100 through the gate dielectric structure 200, and the conduction and the cut-off of the conductive channel can be controlled by controlling the voltage on the gate metal part 300. Thus, the gallium nitride device can be used as a transistor.
The gallium nitride device may be specifically a High Electron Mobility Transistor (HEMT).
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model.
Claims (10)
1. A gallium nitride gate withstand voltage structure, comprising:
a gallium nitride structure (100), the gallium nitride structure (100) for forming a two-dimensional electron gas;
A gate dielectric structure (200), the gate dielectric structure (200) being disposed on the gallium nitride structure (100), the gate dielectric structure (200) comprising at least one dielectric layer (210) and at least one interposer layer (220) stacked;
The grid metal piece (300), the grid metal piece (300) is arranged on the grid dielectric structure (200) to form ohmic connection or Schottky connection;
The dielectric layer (210) is used for consuming electrons of the two-dimensional electron gas, and the insertion layer (220) is used for enhancing pressure resistance between the gate metal piece (300) and the gallium nitride structure (100).
2. The gallium nitride gate voltage-resistant structure according to claim 1, wherein: the dielectric layer (210) has a plurality of layers, and the dielectric layer (210) and the insertion layer (220) are stacked alternately.
3. The gallium nitride gate voltage-resistant structure according to claim 2, wherein: the number of the insertion layers (220) is equal to the number of the dielectric layers (210);
The bottom layer of the gate dielectric structure (200) is the dielectric layer (210) and the top layer is the interposer layer (220);
or the bottom layer of the gate dielectric structure (200) is the insertion layer (220) and the top layer is the dielectric layer (210).
4. A gallium nitride gate voltage-resistant structure according to any one of claims 1 to 3, wherein: the insertion layer (220) is an intrinsic gallium nitride layer or an intrinsic aluminum gallium nitride layer.
5. A gallium nitride gate voltage-resistant structure according to any one of claims 1 to 3, wherein: the insertion layer (220) is an N-type doped layer, the dielectric layer (210) is a P-type gallium nitride layer, at least one N-type doped layer is positioned on the P-type gallium nitride layer, and PN junctions are formed between adjacent N-type doped layers and the P-type gallium nitride layer.
6. The gallium nitride gate voltage-resistant structure according to claim 5, wherein: the N-type doped layer is an N-type gallium nitride layer or an N-type aluminum gallium nitride layer.
7. The gallium nitride gate voltage-resistant structure according to claim 1, wherein: the gallium nitride structure (100) comprises a gallium nitride channel layer (110) and an aluminum gallium nitride barrier layer (120), wherein the two-dimensional electron gas is formed between the gallium nitride channel layer (110) and the aluminum gallium nitride barrier layer (120), and the gate dielectric structure (200) is arranged on the aluminum gallium nitride barrier layer (120).
8. The gallium nitride gate voltage-resistant structure according to claim 7, wherein: and an aluminum nitride cap layer (410) or a gallium nitride cap layer (420) arranged between the aluminum gallium nitride barrier layer (120) and the gate dielectric structure (200).
9. The gallium nitride gate voltage-resistant structure according to claim 1, wherein: the semiconductor device further comprises a passivation layer (500) arranged on the gate dielectric structure (200), and the passivation layer (500) surrounds the periphery of the gate metal piece (300).
10. Gallium nitride device, its characterized in that: a gallium nitride gate voltage-resistant structure comprising a gallium nitride gate voltage-resistant structure according to any of claims 1-9, further comprising drain and source members disposed on the gallium nitride structure (100).
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