CN218123405U

CN218123405U - MOS pipe parallel connection packaging module

Info

Publication number: CN218123405U
Application number: CN202221358016.6U
Authority: CN
Inventors: 任航
Original assignee: Foshan Jiechuang Technology Co ltd
Current assignee: Foshan Jiechuang Technology Co ltd
Priority date: 2022-05-31
Filing date: 2022-05-31
Publication date: 2022-12-23
Anticipated expiration: 2032-05-31

Abstract

The utility model discloses a MOS pipe parallel connection packaging module, which comprises a MOS pipe module, a first conductive heat-conducting plate, a second conductive heat-conducting plate and a circuit board insulated from the second conductive heat-conducting plate, wherein the circuit board is assembled on the second conductive heat-conducting plate, and the MOS pipe module is welded on the first conductive heat-conducting plate; the MOS tube module group comprises a plurality of MOS tubes which are arranged side by side, and the plurality of MOS tubes are close to or mutually abutted; the drain electrode of the MOS tube is welded on the first conductive heat-conducting plate, the grid electrode of the MOS tube is welded on the circuit board, and the source electrode of the MOS tube is welded on the second conductive heat-conducting plate. The utility model discloses an integrated level of MOS pipe is high, and whole small, the encapsulation is convenient, low in production cost.

Description

MOS pipe parallel connection packaging module

Technical Field

The utility model relates to an electron power field technical field especially relates to a parallelly connected encapsulation module of MOS pipe.

Background

In the traditional MOS module packaging, MOS tubes are packaged on an electric and heat conducting bottom plate, and then the electric and heat conducting bottom plate is subjected to injection sealing to cover an injection sealing part of an integrated circuit and expose related connecting pins or connecting terminals, so that the packaging space among a plurality of MOS tubes connected in parallel is large, and the MOS tube integrated module is large in integral volume and large in occupied space; under the same volume, the number of MOS tubes which can be connected in parallel is small, so that a large-current packaged MOS tube packaging module is inconvenient to manufacture; the packaging process is complex, difficult and multiple in flow, and can be manufactured only by adopting a special packaging machine in a dust-free workshop, so that the production cost is high.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that a parallelly connected encapsulation module of MOS pipe is provided, the integrated level of MOS pipe is high, and is whole small, and the encapsulation is convenient, low in production cost.

In order to solve the technical problem, the utility model provides a MOS pipe parallel connection packaging module, which comprises an MOS pipe module, a first conductive heat-conducting plate, a second conductive heat-conducting plate and a circuit board insulated from the second conductive heat-conducting plate, wherein the circuit board is assembled on the second conductive heat-conducting plate, and the MOS pipe module is welded on the first conductive heat-conducting plate; the MOS tube module group comprises a plurality of MOS tubes which are arranged side by side, and the plurality of MOS tubes are close to or mutually abutted; the drain electrode of the MOS tube is welded on the first conductive heat-conducting plate, the grid electrode of the MOS tube is welded on the circuit board, and the source electrode of the MOS tube is welded on the second conductive heat-conducting plate.

As an improvement of the scheme, a plurality of grid welding parts are arranged at intervals at one end of the circuit board close to the MOS tube, and the grid welding parts are welded with the grid of the MOS tube correspondingly.

As an improvement of the above, the first conductive heat conducting plate is spaced apart from the second conductive heat conducting plate.

As the improvement of the scheme, the upper surface of the edge of one end of the second conductive heat-conducting plate close to the MOS tube and the upper surface of the edge of one end of the first conductive heat-conducting plate close to the second conductive heat-conducting plate are both provided with tin plating layers.

As an improvement of the scheme, the second electric conduction heat plate comprises an electric conduction heat conduction bottom plate and an electric conduction heat conduction connecting plate connected with the electric conduction heat conduction bottom plate.

As the improvement of the scheme, the electric and heat conducting connecting plate and the electric and heat conducting bottom plate are arranged at a right angle.

As the improvement of the scheme, the bottom end surface of the electric and heat conducting bottom plate is provided with an insulating and heat conducting glue layer.

Implement the utility model discloses, following beneficial effect has:

the utility model discloses a little or no interval between a plurality of MOS pipes in the MOS manages the module, and its occupation space is little, and is small with the supporting first electrically conductive heat-conducting plate of MOS pipe module, the electrically conductive heat-conducting plate of second and circuit board to make the parallelly connected encapsulation module's of MOS pipe whole small, reduction in production cost. Under the same volume, the integrated level of MOS pipe is high, can set up more parallelly connected MOS pipe to bear bigger electric current and improve output, the quantity of MOS pipe can be integrated according to the demand is self-defined moreover, and is convenient succinct, and the application flexibility ratio is high. The parallel connection packaging structure of the MOS tubes is simple, the packaging difficulty is low, a special packaging machine is not needed for packaging, the packaging is convenient, and the production cost is low. In addition, the MOS tube parallel connection packaging module is high in heat conductivity coefficient and good in heat dissipation effect.

Drawings

Fig. 1 is a schematic structural diagram of a MOS transistor parallel package module provided by the present invention;

fig. 2 is a schematic side view of a MOS transistor parallel package module provided in the present invention;

fig. 3 is an exploded schematic view of a MOS transistor parallel package module provided by the present invention;

fig. 4 is a schematic structural diagram of a MOS transistor provided by the present invention.

Detailed Description

To make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings. Only this statement, the utility model discloses the upper and lower, left and right, preceding, back, inside and outside etc. position words that appear or will appear in the text only use the utility model discloses an attached drawing is the benchmark, and it is not right the utility model discloses a concrete restriction.

As shown in fig. 1-4, the embodiment of the present invention provides a MOS transistor parallel connection package module, which includes a MOS transistor module 1, a first conductive thermal conductive plate 2, a second conductive thermal conductive plate 3, and a circuit board 4 insulated from the second conductive thermal conductive plate 3, wherein the circuit board 4 is assembled on the second conductive thermal conductive plate 3; MOS manages 1 welding of module on first electrically conductive heat-conducting plate 2, MOS pipe module 1 is including a plurality of MOS pipes 5 that set up side by side, mutual butt between a plurality of MOS pipes 5, no interval between two adjacent MOS pipes 5, its occupation space is little, with the supporting first electrically conductive heat-conducting plate 2 of MOS pipe module 1, the electrically conductive heat-conducting plate 3 of second and circuit board 4 is small, thereby make the parallelly connected encapsulation module's of MOS pipe 5 whole small, and production cost is reduced. The MOS pipe 5 is integrally welded on the first conductive heat-conducting plate 2, the drain 51 of the MOS pipe 5 is welded on the first conductive heat-conducting plate 2, the grid 52 of the MOS pipe 5 is welded on the circuit board 4, the source 53 of the MOS pipe 5 is welded on the second conductive heat-conducting plate 3, the heat dissipation of the MOS pipe 5 is carried out through the first conductive heat-conducting plate 2 and the second conductive heat-conducting plate 3, so that the heat conductivity coefficient of the parallel packaging module of the MOS pipe 5 is high, and the heat dissipation effect is good.

Preferably, a plurality of gate soldering portions 41 are spaced apart from one end of the circuit board 4 close to the MOS transistor 5, and the gate soldering portions 41 are soldered to the gate 52 of the MOS transistor 5 correspondingly, so as to improve the stability of the electrical connection between the MOS transistor 5 and the circuit board 4.

In order to avoid short-circuiting the source 53 of the MOS transistor 5 to the gate 52. The first conductive heat-conducting plate 2 and the second conductive heat-conducting plate 3 are arranged at intervals, the first conductive heat-conducting plate 2 and the second conductive heat-conducting plate 3 are not in contact with each other, namely, the second conductive heat-conducting plate 3 welded with the source electrode 53 of the MOS tube 5 and the first conductive heat-conducting plate 2 welded with the drain electrode 51 of the MOS tube 5 are not connected with each other, the source electrode 53 and the grid electrode 52 of the MOS tube 5 are not in short circuit connection, and the MOS tube 5 is prevented from being damaged.

Preferably, the upper surface of the edge of one end of the second conductive heat conduction plate 3 close to the MOS tube 5 and the upper surface of the edge of one end of the first conductive heat conduction plate 2 close to the second conductive heat conduction plate 3 are both provided with tin plating layers, and the drain 51 and the source 53 of the MOS tube 5 are respectively welded with the corresponding tin plating layers.

Preferably, the second conductive and thermal conductive plate 3 includes a conductive and thermal conductive base plate 31 and a conductive and thermal conductive connecting plate 32 integrally formed with the conductive and thermal conductive base plate 31, the circuit board 4 is mounted on the conductive and thermal conductive base plate 31, and the conductive and thermal conductive connecting plate 32 and the first conductive and thermal conductive plate 2 are connected to an external circuit through a connecting terminal. The electrically and thermally conductive connecting plate 32 is disposed at a right angle to the electrically and thermally conductive bottom plate 31, so that the MOS transistor 5 parallel package module has a small overall size and occupies a small space.

The bottom end face of the bottom plate 31 is provided with an insulating and heat-conducting adhesive layer 6, so that the bottom plate 31 can be directly mounted on a heat sink, thereby improving the heat dissipation efficiency and preventing the bottom plate 31 from being electrically connected with the heat sink.

Preferably, the circuit board 4 includes an absorption circuit and a driving circuit or a part of the driving circuit, the driving circuit drives the MOS transistor 5 to conduct, and the absorption circuit is used for absorbing a switching peak of the MOS transistor 5, preventing overvoltage, and enabling the parallel connection of the MOS transistor 5 and the packaging module to be stable and reliable.

It should be noted that the circuit board 4 is preferably a PCB board having an insulating layer, but this is not the case, and the circuit board 4 having an insulating layer may be selected according to actual circumstances. The absorption circuit and the driving circuit for the MOS transistor 5 are both in the prior art, and the circuit structure and the operation principle thereof will not be described in detail herein. First electrically conductive heat-conducting plate 2 and the electrically conductive heat-conducting plate 3 of second are the copper, and the specific heat capacity of copper is big, and coefficient of thermal conductivity is high, makes the heat that MOS pipe 5 gived off outwards derive fast, improves MOS pipe 5's radiating effect.

The utility model has the advantages that under the same volume, the integration level of the MOS tube 5 is high, more MOS tubes 5 connected in parallel can be arranged to bear larger current and improve output power, and the number of the MOS tubes 5 can be integrated in a user-defined way according to requirements, so that the utility model is convenient and simple and has high application flexibility; and single or multiple MOS tubes can be maintained or replaced, and the maintenance is convenient. The parallel connection packaging structure of the MOS tubes 5 is simple, the packaging difficulty is low, a special packaging machine is not needed for packaging, the packaging is convenient, and the production cost is low. In addition, the MOS tube 5 parallel connection packaging module has high heat conductivity coefficient and good heat dissipation effect.

The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, which is defined by the appended claims.

Claims

1. The MOS tube parallel connection packaging module is characterized by comprising an MOS tube module, a first conductive heat-conducting plate, a second conductive heat-conducting plate and a circuit board insulated from the second conductive heat-conducting plate, wherein the circuit board is assembled on the second conductive heat-conducting plate;

the MOS tube module is welded on the first conductive heat-conducting plate and comprises a plurality of MOS tubes arranged side by side, and the MOS tubes are close to or mutually abutted;

the drain electrode of the MOS tube is welded on the first conductive heat-conducting plate, the grid electrode of the MOS tube is welded on the circuit board, and the source electrode of the MOS tube is welded on the second conductive heat-conducting plate.

2. The MOS tube parallel package module of claim 1, wherein a plurality of gate welding parts are arranged at intervals at one end of the circuit board close to the MOS tube, and the gate welding parts are welded with the gate of the MOS tube correspondingly.

3. The MOS parallel package module of claim 1, wherein the first thermally conductive plate is spaced apart from the second thermally conductive plate.

4. The MOS tube parallel package module of claim 1, wherein the upper surface of the edge of the second conductive heat conducting plate near one end of the MOS tube and the upper surface of the edge of the first conductive heat conducting plate near one end of the second conductive heat conducting plate are both provided with tin plating.

5. The MOS tube parallel package module of claim 1, wherein the second electrically and thermally conductive plate comprises an electrically and thermally conductive base plate and an electrically and thermally conductive connecting plate connected to the electrically and thermally conductive base plate.

6. The MOS tube parallel package module of claim 5, wherein the electrically and thermally conductive connecting plate is disposed at a right angle to the electrically and thermally conductive bottom plate.

7. The MOS transistor parallel package module of claim 5, wherein the bottom surface of the bottom plate is provided with an insulating and heat-conducting adhesive layer.