CN203481226U - Large power crimping type IGBT device - Google Patents
Large power crimping type IGBT device Download PDFInfo
- Publication number
- CN203481226U CN203481226U CN201320632802.5U CN201320632802U CN203481226U CN 203481226 U CN203481226 U CN 203481226U CN 201320632802 U CN201320632802 U CN 201320632802U CN 203481226 U CN203481226 U CN 203481226U
- Authority
- CN
- China
- Prior art keywords
- igbt
- chip
- boss
- submodule group
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002788 crimping Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 230000006835 compression Effects 0.000 claims description 19
- 238000007906 compression Methods 0.000 claims description 19
- 230000008676 import Effects 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Landscapes
- Power Conversion In General (AREA)
Abstract
The utility model relates to a large power crimping type IGBT device. The IGBT device is a cylinder or a rectangular solid. The IGBT device comprises a tube shell and two power electrodes disposed at the upper and lower ends of the tube shell; the upper power electrode is in a flat plate structure; one surface of the lower power electrode is provided with a boss array. Each boss in the device is provided with a sub module. The sub modules comprise IGBT sub modules and FWD sub modules. The IGBT sub modules and the FWD sub modules comprise power chips, a plurality of metal pads and insulation frames. The power chips comprise IGBT chips and FWD chips. Both the IGBT chips and the FWD chips in the sub modules are rectangular silicon wafers with the thickness of 100-1,000 micrometers. The crimping type IGBT device has no welding points therein. In practical application, good connection of the chips and the upper and lower power electrodes is realized by depending on dozens of pressure applied to the external part of the device, so that reliability of the device is increased and process complexity is reduced.
Description
Technical field
The utility model relates to a kind of power device, specifically relates to a kind of high-power compression joint type IGBT device.
Background technology
The swiftest and the most violent power electronic device insulated gate bipolar transistor IGBT of development is widely used in the fields such as new forms of energy, power transmission and transformation, track traffic, metallurgy, chemical industry at present.With traditional welding module formula IGBT device ratio, compression joint type IGBT is except having the advantages such as no-welding-spot, bilateral cooling, high reliability, when breaking down, failure mode is short circuit, when series connection application, can't cause because of the inefficacy of indivedual devices the outage of whole device, therefore be very suitable for the electric power system application of high requirement of withstand voltage.Existing crimping IGBT device submodule group parts can not be general, and the layout of IGBT and FWD chip can not make current path optimization, thereby affect device overall performance.
Utility model content
For the deficiencies in the prior art, the purpose of this utility model is to provide a kind of high-power compression joint type IGBT device encapsulation structure, this IGBT device encapsulation structure outward appearance is comprised of the ceramic cartridge of upper and lower two power electrodes and side, inner for a plurality of submodule groups that comprise power chip, in each submodule group, comprise a slice power chip.With the difference of whole device current grade, crimping IGBT internal parallel has several pieces to tens of power chips, comprises several to dozens of submodule group.The utility model has improved device reliability, has reduced process complexity.
The purpose of this utility model is to adopt following technical proposals to realize:
The utility model provides a kind of high-power compression joint type IGBT device, and two power electrodes that described IGBT device comprises shell and is arranged on shell two ends, is characterized in that, one of them power electrode distribution boss array arranges submodule group on each boss.
Further, described submodule component is igbt chip submodule group and FWD chip submodule group, includes Insulating frame, at least two metallic gaskets and power chip; One of them metallic gasket, power chip and other metallic gasket are arranged in Insulating frame from top to bottom successively;
Described power chip comprises igbt chip and fly-wheel diode FWD chip antiparallel with it;
Described igbt chip and FWD chip are the rectangle silicon chip of thickness 100-1000 micron.
Further, when for igbt chip submodule group, corresponding power chip is igbt chip, and when for FWD chip submodule group, corresponding power chip is FWD chip.
Further, described Insulating frame cross section is square, runs through ，Gai hole, a columniform hole from top to bottom will place gate contacts for igbt chip submodule group at one jiao, Insulating frame inner square edge, for FWD chip submodule group, will keep hollow;
The every one side in the outside square edge of described Insulating frame is divided equally the bar shaped post of two projections of cloth, each face of outside square is divided into the quartering, this bar shaped post constraint power chip is in submodule group, and the distribution of two bar shaped posts makes any direction engagement in assembling process of adjacent two sub-modules.
Further, when crimping IGBT fuse module, below described Insulating frame, around boss bottom, place grid positioning framework; The cross section of described grid positioning framework is that one jiao, square and edge runs through a columniform grid location hole from top to bottom, gate contacts bottom is packaged in this hole, gate contacts top is stretched in igbt chip Insulating frame and is contacted with igbt chip gate pads, forms and is electrically connected to.
Further, the columniform grid location hole on described grid positioning framework and the columniform hole on igbt chip Insulating frame coincide mutually;
In grid location hole, be placed with gate contacts, gate contacts top contacts with the gate pads of igbt chip, and its underpart contacts with the grid printed circuit board that imports igbt chip.
Further, described boss comprises igbt chip submodule group boss and FWD chip submodule group boss, IGBT submodule group boss is all positioned at the periphery sides edge of boss array, and one jiao of IGBT submodule group boss grid is provided with a circular arc vacancy, outwardly, one jiao of adjacent IGBT submodule group boss grid breach between two in opposite directions for described circular arc vacancy;
Between described IGBT submodule group boss, groove is darker than groove between FWD submodule group boss.
Further, described FWD chip submodule group boss adopts whole boss, and FWD chip submodule group boss concentrates on boss array center region and arranges, and forms the whole boss being communicated with; Between FWD chip submodule group boss, be provided with groove with location Insulating frame.
Further, igbt chip grid current importing igbt chip is realized by printed circuit board mode;
Described printed circuit board is embedded between the groove of submodule group boss, is covered with the conductive layer that layer of gold or copper metal form on printed circuit board surface; On conductive layer with each igbt chip gate contacts contact point near, all place a resistance, grid current enters gate contacts after described resistance; Printed circuit board conductive layer draws pin with the grid that passes shell and is connected.
Further, the electrode that the base lower surface edge joint weld of described IGBT device is connected to auxiliary emitter electrode draws pin; Described shell is the shell of ceramic material.
Further, igbt chip grid current imports igbt chip or realizes by soft connection mode; For each igbt chip gate contacts, adopt a soft line to draw pin with the grid that passes shell and be connected, all soft wire lengths are all consistent, and all around boss array periphery inner wall of tube shell, distribute; Before introducing igbt chip submodule group, in soft line, access resistance.
Compared with the prior art, the beneficial effect that the utility model reaches is:
1, the high-power compression joint type IGBT device that the utility model provides, the Insulating frame of IGBT and FWD chip submodule group is compatible, highly reduces, and has reduced kind and the materials consumption of assembly.Outside submodule group, the bar shaped post of surrounding projection can be used for intermeshing location, reduces the skew of module.In addition, the distribution one of surrounding bar post causes it arbitrarily towards all meshing with adjacent submodule group, has improved the flexibility that submodule group is arranged.
2,, for FWD chip submodule group, dead resistance and the inductance of device when whole boss has reduced FWD conducting, improved the electrical characteristic of device.In addition, whole boss has strengthened the thermal coupling between FWD chip in parallel, under malfunction, a certain chip high temperature burns, device integral body is short-circuit condition, the temperature that affects that now adjacent chips is burnt chip synchronously rises to and burns short circuit, and the total sectional area of current lead-through has increased, thereby has reduced conducting resistance, be conducive to reduce the wastage, improve break-over of device operating characteristic.
3, in each igbt chip grid current path, be all provided with a resistance, this resistance is by the higher-order of oscillation effectively suppressing because parasitic parameter causes in igbt chip and encapsulating structure, reduce electromagnetic interference and the loss of device inside, this resistance can improve the balanced current distribution of parallel IGBT chip in switching process simultaneously, avoids part igbt chip because bearing burning that super-high-current causes.
4, igbt chip grid current imports and adopts printed circuit board, has reduced the parasitic parameter in grid current path, can be used as the insulation isolation of gate contacts and bottom electrode simultaneously, has simplified device overall structure.
5, one jiao of all igbt chip grid all the surrounding in boss array along but not array inner side, thereby avoided grid to control the central area of electric current in power electric current, greatly reduce the alternating electromagnetic field of the power electric current generation in real work to grid-controlled impact, improved the reliability of device.
Accompanying drawing explanation
Fig. 1 is that the igbt chip surface pads that the utility model provides distributes;
Fig. 2 is the submodule group insulated frame structure figure that the utility model provides;
Fig. 3 is the submodule group assembling assumption diagram that the utility model provides;
Fig. 4 is the grid positioning framework structure chart that the utility model provides;
Fig. 5 is the crimping IGBT device inside structure vertical view that the utility model provides;
Fig. 6 is the whole boss schematic diagram of FWD that the utility model provides;
Wherein: 1-grid, 2-emitter, 3-bar shaped post, 4-grid location hole I, 5-Insulating frame, 6-metallic gasket, 7-IGBT or FWD chip, 8-grid location hole II, 9-IGBT boss, 10-FWD boss, 11-grid printed circuit board, 12-grid draws pin, and 13-emitter draws pin, the whole boss of 14-FWD.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
The utility model provides a kind of high-power compression joint type IGBT device, and crimping IGBT appearance of device is comprised of the ceramic cartridge of two power electrodes and side, and described two power electrodes are separately positioned on the two ends of shell.Two power electrodes are inner for a plurality of submodule groups that comprise power chip, in each submodule group, comprise a slice power chip.With the difference of whole device current grade, crimping IGBT device inside is parallel with several pieces to tens of power chips, comprises several to dozens of submodule group.The power chip of crimping IGBT device inside comprises igbt chip and two kinds of antiparallel fly-wheel diode FWD chips with it.Generally, igbt chip and FWD chip are the Thin Rectangular silicon chip of hundreds of microns of thickness.Igbt chip has three electrodes, and front is emitter 2 and grid 1, and reverse side is collector electrode, and igbt chip surface pads distributes as shown in Figure 1.FWD chip has two electrodes, and front is anode, and reverse side is negative electrode.Crimping IGBT device inside is the location of realizing chip, a power electrode a plurality of boss that distribute therein, and each boss is nested with a sub-module.Each submodule group is by power chip and multilayer metal gasket is stacked is assembled in an Insulating frame 5 and forms, IGBT and FWD chip are due to the difference of number of electrodes, therefore must adopt two kinds of Insulating frames, wherein for the Insulating frame of IGBT, also leave the location hole of grid probe.In grid location hole, be placed with gate contacts, top contacts with the gate pads of igbt chip, and bottom contacts with the printed circuit board that imports grid.In actual package process, submodule group is positioned on the power electrode of boss, adopt the mode of pressure welding to link into an integrated entity, and device inside is without any solder joint with shell top and another power electrode edge of this electrode one.When practical application, the tens of ox pressure that rely on device outside to apply are realized the good connection of chip and upper and lower power electrode, have improved device reliability, have reduced process complexity.
The compatible igbt chip of Insulating frame 5 and FWD chip in the compression joint type IGBT device submodule group that the utility model provides, concrete enforcement as shown in Figure 2.The cross section of Insulating frame is square, at one jiao of Insulating frame 5 inner square edges, connected a columniform hole from top to bottom, be 4-grid location hole I, gate contacts will be placed for igbt chip submodule group in this hole, for FWD chip submodule group, will keep hollow.This framework external edge is divided equally the bar shaped post 3 of two projections of cloth along every one side, each face is divided into the quartering, and this bar shaped post 3 can retrain chip in submodule group, and the distribution of two bar shaped posts 3 can be meshed by any direction adjacent two sub-modules in assembling process.For this Insulating frame 5, do not need to retain the space of IGBT gate contacts, so framework whole height will greatly reduce, only need to assemble power chip and upper and lower metallic gasket.The package assembly of submodule group as shown in Figure 3, comprises Insulating frame 5, two metallic gaskets 6 and power chips; One of them metallic gasket, power chip and another metallic gasket are crimped onto in Insulating frame from top to bottom successively; Power chip is IGBT or FWD chip 7.
For igbt chip submodule group, for location gate contacts, below above-mentioned Insulating frame 5, around boss bottom, placing an inside edge is square, and one jiao of grid positioning framework that has a cylindrical through hole (8-grid location hole II), gate contacts lower set is loaded in this through hole, top, contact is stretched in igbt chip Insulating frame and is contacted with gate pads, forms and is electrically connected to.Grid positioning framework is concrete to be implemented as shown in Figure 4.
In whole device, the boss 9 corresponding with IGBT submodule group is all positioned at the periphery sides edge of array, and one jiao of circular arc vacancy of boss 9 grid outwardly, and one jiao of adjacent lands 9 grid breach between two in opposite directions.For placing gate contacts positioning framework, 9 grooves of IGBT submodule group boss are darker than groove between FWD submodule group boss 10.
The utility model power electrode adopts whole boss 14 for FWD submodule group in parallel, and the shallow slot of putting into Insulating frame is only left on surface, concrete enforcement as shown in Figure 5, Figure 6.In practical layout, FWD chip submodule group concentrates on boss array center region and arranges, thereby forms the whole boss 14 of a connection.Because the height of above-mentioned FWD Insulating frame reduces, boss 10 depths of groove corresponding with FWD chip submodule group only need to place Insulating frame.
In the utility model, IGBT grid current imports igbt chip grid printed circuit board 11 and two kinds of modes of soft line.Adopt the concrete enforcement of grid printed circuit board 11 modes as shown in Figure 5.Printed circuit board is embedded between boss groove corresponding to IGBT submodule group, is covered with the conductive layer that layer of gold or copper metal form on printed circuit board surface.On conductive layer with each gate contacts contact point near, all place a resistance, grid current enters gate contacts after this resistance.Printed circuit board metal level draws pin 12 with the grid that passes ceramic cartridge and is connected.In addition, base lower surface edge joint weld is connected to an auxiliary emitter electrode and draws pin 13.
Except above-mentioned printed circuit board is realized the mode of gate contact, can also realize grid with soft line and draw being connected of pin and gate contacts.For each IGBT gate contacts, adopt respectively a soft line and grid on shell to draw pin and be connected, all soft wire lengths are all consistent, and all around boss array periphery inner wall of tube shell, distribute.Before introducing IGBT submodule group, in soft line, access a resistance.
Finally should be noted that: above embodiment is only in order to illustrate that the technical solution of the utility model is not intended to limit, although the utility model is had been described in detail with reference to above-described embodiment, those of ordinary skill in the field are to be understood that: still can modify or be equal to replacement embodiment of the present utility model, and do not depart from any modification of the utility model spirit and scope or be equal to replacement, it all should be encompassed in the middle of claim scope of the present utility model.
Claims (11)
1. a high-power compression joint type IGBT device, two power electrodes that described IGBT device comprises shell and is arranged on shell two ends, is characterized in that, one of them power electrode distribution boss array arranges submodule group on each boss.
2. high-power compression joint type IGBT device as claimed in claim 1, is characterized in that, described submodule component is igbt chip submodule group and FWD chip submodule group, includes Insulating frame, at least two metallic gaskets and power chip; One of them metallic gasket, power chip and other metallic gasket are arranged in Insulating frame from top to bottom successively;
Described power chip comprises igbt chip and fly-wheel diode FWD chip antiparallel with it;
Described igbt chip and FWD chip are the rectangle silicon chip of thickness 100-1000 micron.
3. high-power compression joint type IGBT device as claimed in claim 2, is characterized in that, when for igbt chip submodule group, corresponding power chip is igbt chip, and when for FWD chip submodule group, corresponding power chip is FWD chip.
4. high-power compression joint type IGBT device as claimed in claim 2, it is characterized in that, described Insulating frame cross section is square, at one jiao, Insulating frame inner square edge, run through a columniform hole from top to bottom, gate contacts will be placed for igbt chip submodule group in this hole, for FWD chip submodule group, will keep hollow;
The every one side in the outside square edge of described Insulating frame is divided equally the bar shaped post of two projections of cloth, each face of outside square is divided into the quartering, this bar shaped post constraint power chip is in submodule group, and the distribution of two bar shaped posts makes any direction engagement in assembling process of adjacent two sub-modules.
5. high-power compression joint type IGBT device as claimed in claim 4, is characterized in that, when crimping IGBT fuse module, places grid positioning framework below described Insulating frame around boss bottom; The cross section of described grid positioning framework is that one jiao, square and edge runs through a columniform grid location hole from top to bottom, gate contacts bottom is packaged in this hole, gate contacts top is stretched in igbt chip Insulating frame and is contacted with igbt chip gate pads, forms and is electrically connected to.
6. high-power compression joint type IGBT device as claimed in claim 5, is characterized in that, the columniform grid location hole on described grid positioning framework and the columniform hole on igbt chip Insulating frame coincide mutually;
In grid location hole, be placed with gate contacts, gate contacts top contacts with the gate pads of igbt chip, and its underpart contacts with the grid printed circuit board that imports igbt chip.
7. high-power compression joint type IGBT device as claimed in claim 1, it is characterized in that, described boss comprises igbt chip submodule group boss and FWD chip submodule group boss, IGBT submodule group boss is all positioned at the periphery sides edge of boss array, and one jiao of IGBT submodule group boss grid is provided with a circular arc vacancy, outwardly, one jiao of adjacent IGBT submodule group boss grid breach between two in opposite directions for described circular arc vacancy;
Between described IGBT submodule group boss, groove is darker than groove between FWD submodule group boss.
8. high-power compression joint type IGBT device as claimed in claim 7, is characterized in that, described FWD chip submodule group boss adopts whole boss, and FWD chip submodule group boss concentrates on boss array center region and arranges, and forms the whole boss being communicated with; Between FWD chip submodule group boss, be provided with groove with location Insulating frame.
9. high-power compression joint type IGBT device as claimed in claim 7, is characterized in that, igbt chip grid current imports igbt chip and realizes by printed circuit board mode;
Described printed circuit board is embedded between the groove of submodule group boss, is covered with the conductive layer that layer of gold or copper metal form on printed circuit board surface; On conductive layer with each igbt chip gate contacts contact point near, all place a resistance, grid current enters gate contacts after described resistance; Printed circuit board conductive layer draws pin with the grid that passes shell and is connected.
10. high-power compression joint type IGBT device as claimed in claim 9, is characterized in that, the electrode that the base lower surface edge joint weld of described IGBT device is connected to auxiliary emitter electrode draws pin; Described shell is the shell of ceramic material.
11. high-power compression joint type IGBT devices as claimed in claim 7, is characterized in that, igbt chip grid current imports igbt chip or realizes by soft connection mode; For each igbt chip gate contacts, adopt a soft line to draw pin with the grid that passes shell and be connected, all soft wire lengths are all consistent, and all around boss array periphery inner wall of tube shell, distribute; Before introducing igbt chip submodule group, in soft line, access resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320632802.5U CN203481226U (en) | 2013-10-14 | 2013-10-14 | Large power crimping type IGBT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320632802.5U CN203481226U (en) | 2013-10-14 | 2013-10-14 | Large power crimping type IGBT device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203481226U true CN203481226U (en) | 2014-03-12 |
Family
ID=50229501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320632802.5U Expired - Lifetime CN203481226U (en) | 2013-10-14 | 2013-10-14 | Large power crimping type IGBT device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203481226U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489645A (en) * | 2015-12-18 | 2016-04-13 | 国网智能电网研究院 | High-power crimping type IGBT drive wire |
| CN105514095A (en) * | 2015-12-18 | 2016-04-20 | 华北电力大学 | Crimped IGBT module with variable boss height |
| CN105552037A (en) * | 2015-12-18 | 2016-05-04 | 国网智能电网研究院 | Novel crimping type IGBT module |
| CN105552038A (en) * | 2015-12-18 | 2016-05-04 | 华北电力大学 | High-power crimping IGBT device |
| CN106706963A (en) * | 2015-07-28 | 2017-05-24 | 国网智能电网研究院 | Large power compression type IGBT package module press mounting test clamp |
| CN110676233A (en) * | 2019-09-10 | 2020-01-10 | 深圳第三代半导体研究院 | Crimping type power switch module and preparation method thereof |
| CN106706963B (en) * | 2015-07-28 | 2024-05-31 | 国网智能电网研究院 | High-power crimping IGBT encapsulation module pressure equipment test fixture |
-
2013
- 2013-10-14 CN CN201320632802.5U patent/CN203481226U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106706963A (en) * | 2015-07-28 | 2017-05-24 | 国网智能电网研究院 | Large power compression type IGBT package module press mounting test clamp |
| CN106706963B (en) * | 2015-07-28 | 2024-05-31 | 国网智能电网研究院 | High-power crimping IGBT encapsulation module pressure equipment test fixture |
| CN105489645A (en) * | 2015-12-18 | 2016-04-13 | 国网智能电网研究院 | High-power crimping type IGBT drive wire |
| CN105514095A (en) * | 2015-12-18 | 2016-04-20 | 华北电力大学 | Crimped IGBT module with variable boss height |
| CN105552037A (en) * | 2015-12-18 | 2016-05-04 | 国网智能电网研究院 | Novel crimping type IGBT module |
| CN105552038A (en) * | 2015-12-18 | 2016-05-04 | 华北电力大学 | High-power crimping IGBT device |
| CN105552038B (en) * | 2015-12-18 | 2020-02-21 | 华北电力大学 | High-power crimping type IGBT device |
| CN105552037B (en) * | 2015-12-18 | 2020-04-24 | 国网智能电网研究院 | Crimping formula IGBT module |
| CN105514095B (en) * | 2015-12-18 | 2020-05-12 | 华北电力大学 | Crimping type IGBT module with height-variable boss |
| CN105489645B (en) * | 2015-12-18 | 2020-09-04 | 国网智能电网研究院 | High-power crimping formula IGBT drive wire |
| CN110676233A (en) * | 2019-09-10 | 2020-01-10 | 深圳第三代半导体研究院 | Crimping type power switch module and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103515365B (en) | A kind of high-power compression joint type IGBT device | |
| CN203481226U (en) | Large power crimping type IGBT device | |
| CN107369657B (en) | Double-sided heat dissipation power module with multiple areas arranged in parallel | |
| CN104900634A (en) | Package structure and stacked package module with same | |
| CN104900609A (en) | Package structure | |
| CN102768999B (en) | High-power integral wafer IGBT (insulated gate bipolar transistor) packaging structure | |
| CN106972762A (en) | Power module | |
| CN110246835B (en) | Three-dimensional integrated high-voltage silicon carbide module packaging structure | |
| CN202695428U (en) | Insulated gate bipolar transistor (IGBT) power module | |
| CN104465549A (en) | Power conductor module | |
| WO2020215737A1 (en) | Power device packaging structure and method therefor | |
| CN102693969A (en) | Insulated gate bipolar translator (IGBT) power module | |
| CN110676176B (en) | Preparation process of power type semiconductor device packaging structure | |
| CN105374806A (en) | Circular-group-arranged crimping power device packaging | |
| CN110491857A (en) | A kind of DBC structure suitable for the encapsulation of high voltage power device module | |
| KR102339135B1 (en) | Bridge leg circuit assembly and full-bridge circuit assembly | |
| CN202749363U (en) | High-power whole wafer insulated gate bipolar transistor (IGBT) packaging structure | |
| CN110676233B (en) | Crimping type power switch module and preparation method thereof | |
| CN208271887U (en) | A kind of high-power super-high pressure pulse half-wave rectifier bridge | |
| CN110012590B (en) | Full-bridge integrated module based on PCB embedding process | |
| CN203774187U (en) | Solid-state relay housing where ground connection parts of internal leads are at a certain angle | |
| CN110752278A (en) | Light emitting diode and manufacturing method thereof | |
| CN112687676A (en) | Crimping type IGBT sub-module and crimping type IGBT module | |
| CN110556349A (en) | Power type semiconductor device packaging structure | |
| CN205177819U (en) | Encapsulate single -chip in advance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140312 |
|
| CX01 | Expiry of patent term |