CN211045412U

CN211045412U - Crimping type SiC power module packaging structure

Info

Publication number: CN211045412U
Application number: CN201922237947.5U
Authority: CN
Inventors: 杨柳; 张振中; 孙军; 和巍巍
Original assignee: Basic Semiconductor Ltd
Current assignee: Basic Semiconductor Ltd
Priority date: 2019-12-13
Filing date: 2019-12-13
Publication date: 2020-07-17
Anticipated expiration: 2029-12-13

Abstract

The utility model provides a crimping type SiC power module packaging structure, includes insulating housing, main terminal and surface mounting has the DBC base plate of chip, insulating housing is lower part open-ended structure, be provided with in the insulating housing and hold the chamber, the crimping of DBC base plate is installed the lower part opening part of insulating housing, just the installation of DBC base plate the one side orientation of chip the inside of insulating housing, insulating housing's lateral part is formed with the main terminal mounting hole that is used for installing the main terminal, the main terminal passes through the main terminal mounting hole is installed on the insulating housing and with in the insulating housing DBC base plate electricity is connected. The utility model discloses a crimping type packaging structure can make electrical characteristic, thermal characteristic, heat-sinking capability and the through-flow capacity of SiC power module strengthen greatly, effectively promotes the whole reliability of module, reduces the module size, improves power density.

Description

Crimping type SiC power module packaging structure

Technical Field

The utility model relates to a semiconductor power electronic device, especially a crimping type SiC power module packaging structure.

Background

Currently, a silicon (Si) semiconductor power electronic device is mainly used for a new energy automobile power electronic conversion device. With the continuous improvement of market demand, the design of new energy automobiles is more and more refined, and the requirements on power density and efficiency are higher and higher. The physical properties of silicon material devices have not been able to meet the requirements of high frequency and high efficiency applications. In recent years, in the field of new energy automobiles, silicon carbide (SiC) semiconductor power devices have been developed rapidly, and have several advantages over silicon semiconductor (Si) power devices that are currently widely used, such as: high working frequency, low loss, high working temperature, high voltage-resistant grade and the like.

The application of the silicon carbide power module can further promote the application advantages of new energy automobiles. As power modules are developed to have higher power density, more and more requirements are put on the module packaging technology, and the existing module packaging technology and materials are more and more limited.

The existing packaging structures can be divided into two types according to welding modes: the packaging structure based on the welding process and the packaging structure based on the compression joint process. Compared with the traditional welding type power module, the crimping type package is convenient for the parallel connection and the anti-parallel connection of the MOSFET chip and the diode due to the structure of the crimping type module, and is easy to manufacture a large-current power module according to the requirement; meanwhile, the chip used by the compression joint module does not need welding and bonding processes, and the source electrode, the drain electrode and the gate electrode are all led out in a pressure connection mode. The electrodes are firmly led out, and the shock resistance, vibration resistance and fatigue resistance are improved.

However, the existing compression joint packaging structure is mainly suitable for a silicon power device with a low current turn-off speed, but the packaging of the silicon carbide device is poor in electrical characteristics and thermal characteristics, so that the reliability of the silicon carbide device is difficult to ensure, the power density is difficult to improve, and the excellent performance of the high-voltage silicon carbide device cannot be fully exerted.

SUMMERY OF THE UTILITY MODEL

The present invention is directed to overcome at least one of the above-mentioned drawbacks, and provides a compression-type SiC power module package structure.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model provides a crimping type SiC power module packaging structure, includes insulating housing, main terminal and surface mounting has the DBC base plate of chip, insulating housing is lower part open-ended structure, be provided with in the insulating housing and hold the chamber, the crimping of DBC base plate is installed the lower part opening part of insulating housing, just the installation of DBC base plate the one side orientation of chip the inside of insulating housing, insulating housing's lateral part is formed with the main terminal mounting hole that is used for installing the main terminal, the main terminal passes through the main terminal mounting hole is installed on the insulating housing and with in the insulating housing DBC base plate electricity is connected.

Further:

the SiC module packaging structure further comprises a lead frame positioned in the insulating shell, wherein the lead frame is in crimping connection with the upper portion of the DBC substrate and serves as an internal circuit leading-out end of the DBC substrate to be electrically connected with the main terminal.

The main terminal mounting holes comprise three mounting holes for respectively mounting the P terminal, the N terminal and the output terminal.

The P terminal and the N terminal are mounted at a first side of the insulating case through corresponding mounting holes, and the output terminal is mounted at a second side of the insulating case opposite to the first side through corresponding mounting holes.

An auxiliary terminal mounting hole for mounting an auxiliary terminal is formed at the top of the insulating case, and the auxiliary terminal is mounted on the insulating case through the auxiliary terminal mounting hole and electrically connected to the DBC substrate in the insulating case.

An NTC terminal mounting hole for mounting an NTC terminal is formed at the top of the insulating case, and the NTC terminal is mounted on the insulating case through the NTC terminal mounting hole and electrically connected with the DBC substrate in the insulating case.

The insulating housing comprises an insulating shell and a cover plate, the insulating shell is of a frame structure with an upper opening and a lower opening, the cover plate covers the upper opening of the insulating shell, and an auxiliary terminal mounting hole for mounting an auxiliary terminal and/or an NTC terminal mounting hole for mounting an NTC terminal are formed in the cover plate.

And the upper part of the auxiliary terminal mounting hole and/or the NTC terminal mounting hole is/are provided with an insulating annular columnar protrusion.

A groove structure is arranged on the side part, where the main terminal is not installed, of the insulating shell, and the connecting piece is installed on the groove structure.

The insulation shell is square, the main terminal mounting holes and the corresponding main terminals are respectively located on the first side and the second side of the insulation shell, and the two groove structures and the corresponding two connecting pieces are respectively located on the third side and the fourth side of the insulation shell.

The utility model discloses following beneficial effect has:

the utility model provides a can be applicable to SiC power device, the crimping type SiC power module packaging structure who has good optimization promotion effect to SiC power module performance, this SiC power module packaging structure adopts lower part open structure's insulating housing, be formed with in the insulating housing and hold the chamber, the lower part opening part at insulating housing is installed in the circuit board crimping, the one side of DBC base plate installation chip is in insulating housing's inside, and form the main terminal mounting hole that is used for installing the main terminal at insulating housing's lateral part, the main terminal of SiC power module is installed and is connected with the circuit board electricity in the insulating housing through the main terminal mounting hole that forms at insulating housing's lateral part, the crimping type SiC power module packaging structure who adopts above-mentioned design, it can be more adapted to SiC power device to compare traditional crimping type packaging structure, make the electric characteristic of the SiC power module of encapsulation, the SiC power module, The thermal property, the heat dissipation capability and the through-current capability are greatly enhanced, the overall reliability of the module is effectively improved, the size of the module is reduced, the power density is improved, the remarkable advantages of the SiC power device in the aspects of performance, reliability and the like are brought, and particularly the excellent performance of the high-voltage silicon carbide device can be fully exerted.

In a preferred embodiment, the invention can also obtain further advantages, such as providing a lead Frame in the insulating shell, wherein the lead Frame is pressed on the upper part of the circuit board and is electrically connected with the main terminal as the internal circuit leading-out terminal of the circuit board, and the preferred embodiment is further combined with the lead Frame (L ead Frame) to construct a pressure welding type SiC power module based on the packaging structure design, so that the whole SiC power module is better in electrical property and thermal property, and the performance and reliability of the SiC power device are further improved.

Drawings

Fig. 1 is a top view of a crimp-type SiC power module package structure according to an embodiment of the present invention;

fig. 2 is a left side view of the crimp-type SiC power module package structure shown in fig. 1;

fig. 3 is a perspective view of the crimp-type SiC power module package structure shown in fig. 1;

fig. 4 is a cross-sectional view of the crimp-type SiC power module package structure shown in fig. 1;

fig. 5 is an exploded view of the crimp-type SiC power module package structure shown in fig. 1.

Detailed Description

The embodiments of the present invention will be described in detail below. It should be emphasized that the following description is merely exemplary in nature and is not intended to limit the scope of the invention or its application.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. In addition, the connection may be for either a fixed function or a circuit/signal communication function.

It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the embodiments of the present invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present invention, "a plurality" means two or more unless specifically limited otherwise.

Referring to fig. 1 to 5, an embodiment of the present invention provides a crimping type SiC power module package structure, which includes an insulating housing (which may include an insulating housing 1 and a cover plate 2), a main terminal 3, and a DBC substrate 4 (ceramic copper clad plate) with a chip 5 mounted on a surface thereof. The insulation housing is of a structure with an opening at the lower part, an accommodating cavity is arranged in the insulation housing, the DBC substrate 4 is installed at the opening at the lower part of the insulation housing in a compression joint mode, one surface of the chip 5, which faces the inside of the insulation housing, of the DBC substrate 4 is installed, a main terminal installation hole for installing a main terminal is formed in the side part of the insulation housing, and the main terminal is installed on the insulation housing through the main terminal installation hole and is electrically connected with the DBC substrate 4 in the insulation housing.

The utility model discloses crimping type SiC power module encapsulation knot can be effectively applicable to SiC power device, it promotes the effect to have good optimization to SiC power module performance, this SiC power module packaging structure adopts lower part open structure's insulating housing, be formed with in the insulating housing and hold the chamber, the circuit board is installed at insulating housing's lower part opening part by the crimping, the one side of circuit board installation chip is in insulating housing's inside, and form the main terminal mounting hole that is used for installing the main terminal at insulating housing's lateral part, the main terminal of SiC power module is installed and is connected with the circuit board electricity in the insulating housing through the main terminal mounting hole that forms at insulating housing's lateral part, the crimping type SiC power module packaging structure who adopts above-mentioned design, compare traditional crimping type packaging structure and more can adapt to SiC power device, make the electric characteristic of the SiC power module of encapsulation, the SiC power module's of messenger, The thermal property, the heat dissipation capability and the through-current capability are greatly enhanced, the overall reliability of the module is effectively improved, the size of the module is reduced, the power density is improved, the remarkable advantages of the SiC power device in the aspects of performance, reliability and the like are brought, and particularly the excellent performance of the high-voltage silicon carbide device can be fully exerted.

Referring to fig. 4 to 5, in a particularly preferred embodiment, the SiC module package structure further includes a lead Frame 6 located in the insulating housing, and the lead Frame 6 is crimped on the upper portion of the DBC substrate 4 and electrically connected to the main terminal as an internal circuit terminal of the DBC substrate 4. this preferred embodiment further combines the structure of the lead Frame (L ead Frame) to realize a crimped SiC power module based on the above package structure design, so that the SiC power module as a whole is better in electrical and thermal properties, and the performance and reliability of the SiC power device are further improved.

Referring to fig. 1 and 3, in a preferred embodiment, the main terminal mounting holes include three mounting holes to which the P terminal 31, the N terminal 32, and the output terminal 33 are mounted, respectively.

In a preferred embodiment, the P terminal 31 and the N terminal 32 are mounted on a first side of the insulating case through corresponding mounting holes, and the output terminal 33 is mounted on a second side of the insulating case opposite to the first side through corresponding mounting holes.

Referring to fig. 1 to 3, in a preferred embodiment, an auxiliary terminal mounting hole for mounting an auxiliary terminal 7 is formed at the top of the insulating case, and the auxiliary terminal 7 is mounted on the insulating case through the auxiliary terminal mounting hole and electrically connected to the DBC substrate 4 in the insulating case.

Referring to fig. 1 to 3, in a preferred embodiment, an NTC terminal mounting hole for mounting an NTC terminal 8 is formed at the top of the insulating case, and the NTC terminal 8 is mounted on the insulating case through the NTC terminal mounting hole and electrically connected to the DBC substrate 4 within the insulating case.

Referring to fig. 1 to 5, in a further preferred embodiment, the insulation housing includes an insulation housing 1 and a cover plate 2, the insulation housing 1 is a frame structure with upper and lower openings, the cover plate 2 covers the upper opening of the insulation housing 1, and an auxiliary terminal mounting hole for mounting an auxiliary terminal and/or an NTC terminal mounting hole for mounting an NTC terminal are formed on the cover plate 2. In other embodiments, the insulating housing 1 and the cover plate 2 may be of a unitary structure.

Referring to fig. 2 to 4, in a further preferred embodiment, an insulating circular cylindrical protrusion 9 is provided at an upper portion of the auxiliary terminal mounting hole and/or the NTC terminal mounting hole. By providing the annular cylindrical protrusion 9 at the upper portion of the terminal mounting hole, the insulating annular cylindrical protrusion 9 can increase the creepage distance between the terminals, which helps to further reduce the terminal pitch size and the module size, so that the module has higher power density.

Referring to fig. 1 to 3 and 5, in a preferred embodiment, the side of the insulating housing where the main terminal is not installed is provided with a groove structure, and a connecting member 11 is installed on the groove structure. In a preferred embodiment, as shown in fig. 5, the groove structure is formed as a catching groove structure 10, and the end 12 of the connecting member is formed in a downwardly opening square hook shape in cross section, and the end 12 of the square hook shape is snap-fitted into a slot of the catching groove structure 10.

Referring to fig. 1 and 3, in a preferred embodiment, the insulating housing has a square shape, a plurality of main terminal mounting holes and a plurality of corresponding main terminals 3 are respectively located on a first side and a second side of the insulating housing, and two groove structures and two corresponding connecting members 11 are respectively located on a third side and a fourth side of the insulating housing.

One embodiment of the invention is described further below.

Outside the module is an insulating housing with a receiving cavity therein, and the side and upper portions of the insulating housing are provided with a main terminal 3, an auxiliary terminal 7 and an NTC terminal 8, respectively. The insulating shell comprises two parts, namely an insulating shell 1 and an insulating cover plate 2. Both sides of the insulating housing 1 are formed with through holes for seating the main terminals 3. The other two sides of the insulating shell 1 are provided with groove structures for fixedly mounting the connecting piece 11. The cover plate 2 is used for sealing the upper opening of the insulating shell 1, a through hole is formed in the cover plate 2, and an insulating annular columnar protrusion 9 is arranged at the upper part of the through hole. In holding the intracavity, except main terminal 3 and other terminals, be the lead frame 6, chip 5 and the DBC base plate 4 that act as the crimping piece according to direction of height from top to bottom in proper order, DBC base plate 4 is the ceramic copper-clad plate, divide into the three-layer, and pottery such as intermediate level aluminium oxide or aluminium nitride all cover copper for the upper and lower floor. The lead frame 6 and the chip 5, and the chip 5 and the DBC substrate 4 are welded by lead-tin solder or nano silver. The main terminals 3 of the module include a P terminal, an N terminal, and an OUTPUT terminal (OUTPUT), the P terminal and the N terminal being located on one side, and the opposite sides of the P terminal and the N terminal being the OUTPUT terminals. The other two sides of the module are provided with connecting pieces 11 which can be used for fixing the module. The location of the connecting member 11 may include both symmetrical and asymmetrical. The whole thickness of the module is only 3-25 mm. The auxiliary terminal 7 and the NTC terminal 8 are located at the top of the module. The chip 5 in the module may be a silicon power device or a wide bandgap power device. The positions of the P terminal and the N terminal can be on the same horizontal plane or not and have a certain height difference. The P terminal, the N terminal, and the output terminal may be connected to the DBC substrate 4 of the module by soldering or ultrasonic welding. The auxiliary terminal 7 and the NTC terminal 8 may be connected to the DBC substrate 4 in the module by a Press-FIT process or soldering. The module is internally provided with an NTC, and the position can be in the middle of the module or at two ends of the module and is led out by terminals.

The background section of the present invention may contain background information related to the problems or the environment of the present invention and is not necessarily descriptive of the prior art. Accordingly, the inclusion in the background section is not an admission of prior art by the applicant.

The foregoing is a more detailed description of the present invention, taken in conjunction with the specific/preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. For those skilled in the art to which the invention pertains, a plurality of alternatives or modifications can be made to the described embodiments without departing from the concept of the invention, and these alternatives or modifications should be considered as belonging to the protection scope of the invention. In the description herein, references to the description of the term "one embodiment," "some embodiments," "preferred embodiments," "an example," "a specific example," or "some examples" or the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. Although the embodiments of the present invention and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the scope of the claims.

Claims

1. The utility model provides a crimping type SiC power module packaging structure, its characterized in that, includes insulating casing, main terminal and the DBC base plate of surface mounting chip, insulating casing is lower part open-ended structure, be provided with in the insulating casing and hold the chamber, DBC base plate crimping is installed insulating casing's lower part opening part, just DBC base plate installation the one side orientation of chip insulating casing's inside, insulating casing's lateral part is formed with the main terminal mounting hole that is used for installing the main terminal, the main terminal passes through the main terminal mounting hole is installed on the insulating casing and with in the insulating casing DBC base plate electricity is connected.

2. The crimped SiC power module package of claim 1, further comprising a lead frame within the insulating housing, the lead frame being crimped onto the DBC substrate and electrically connected to the main terminals as internal circuit terminals of the DBC substrate.

3. The crimping type SiC power module package structure according to claim 1 or 2, wherein the main terminal mounting holes include three mounting holes to which a P terminal, an N terminal, and an output terminal are mounted, respectively.

4. The package structure of a crimp-type SiC power module according to claim 3, wherein the P terminal and the N terminal are mounted on a first side of the insulating case through corresponding mounting holes, and the output terminal is mounted on a second side of the insulating case opposite to the first side through corresponding mounting holes.

5. The package structure of a crimp-type SiC power module according to claim 1 or 2, wherein an auxiliary terminal mounting hole for mounting an auxiliary terminal is formed at a top of the insulating case, the auxiliary terminal being mounted on the insulating case through the auxiliary terminal mounting hole and electrically connected to the DBC substrate in the insulating case.

6. The crimping-type SiC power module package structure of claim 1 or 2, wherein a NTC terminal mounting hole for mounting a NTC terminal is formed at a top of the insulating case, the NTC terminal being mounted on the insulating case through the NTC terminal mounting hole and electrically connected to the DBC substrate within the insulating case.

7. The package structure of a crimped SiC power module according to any one of claims 1 to 2, wherein the insulating case includes an insulating case having a frame structure with upper and lower openings, and a cover plate covering the upper opening of the insulating case, and an auxiliary terminal mounting hole for mounting an auxiliary terminal and/or an NTC terminal mounting hole for mounting an NTC terminal are formed in the cover plate.

8. The crimping type SiC power module package structure of claim 7, wherein an upper portion of the auxiliary terminal mounting hole and/or the NTC terminal mounting hole is provided with an insulating annular columnar protrusion.

9. The crimping type SiC power module sealing structure according to any one of claims 1 to 2, wherein a side of the insulating case where the main terminal is not mounted is provided with a groove structure on which a connector is mounted.

10. The package structure of crimped SiC power module according to claim 9, wherein the insulating case has a square shape, a plurality of the main terminal mounting holes and a corresponding plurality of the main terminals are located on opposite first and second sides of the insulating case, respectively, and two of the groove structures and a corresponding two of the connectors are located on opposite third and fourth sides of the insulating case, respectively.