CN218003783U - Active optical waveguide circuit board - Google Patents

Active optical waveguide circuit board Download PDF

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Publication number
CN218003783U
CN218003783U CN202222521681.9U CN202222521681U CN218003783U CN 218003783 U CN218003783 U CN 218003783U CN 202222521681 U CN202222521681 U CN 202222521681U CN 218003783 U CN218003783 U CN 218003783U
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optical waveguide
layer
circuit
substrate
redistribution
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CN202222521681.9U
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Chinese (zh)
Inventor
郭俊宏
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Unimicron Technology Corp
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Unimicron Technology Corp
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Abstract

The application discloses an active optical waveguide circuit board, wherein the active optical waveguide circuit board comprises an optical waveguide structure, an active reflection element, a circuit structure and a control chip; the optical waveguide structure is provided with a first surface, an optical waveguide cladding layer of the optical waveguide structure wraps an optical waveguide core layer, and the optical waveguide core layer is communicated with a cavity; the active reflection element is arranged in the cavity and is provided with a first reflector; the control chip is electrically connected with the active reflection element through the circuit structure arranged on the first surface; the active reflection element actively changes the direction of a light beam reflected by the first reflector according to a first control signal generated by the control wafer; when the light beam is emitted into the optical waveguide structure, the light beam is emitted into the first reflector through the optical waveguide core layer, and the reflecting direction is determined according to the angle of the reflector, so that the light path is more flexible in design.

Description

Active optical waveguide circuit board
Technical Field
An optical waveguide circuit board, especially an active optical waveguide circuit board capable of actively adjusting the light path guiding.
Background
Photonics (Photonics) and Integrated Optics (Integrated Optics) are areas of technology that the modern industry expects to thrive. Compared with the electronics applied to an integrated circuit, the photon applied to the optical path is not limited by the electron transmission directionality of the existing semiconductor, so that a more novel design can be made on the arrangement of the optical path logic. In addition, the transmission speed of photons in the optical path is much higher than that of electrons in the circuit, so that the optical path is designed to perform photon operation, which has advantages in increasing the operation speed.
However, compared with the change and control of the electron flow direction, the photon changes the flow direction in the optical path often by leaning on the reflector or the refractor to change the path route, wherein the reflector can reduce the loss of the photon when changing the path route so as to maintain stronger signal intensity after changing the path route. Furthermore, photons are generally transmitted in a path mode of total reflection in an optical path, but in order to satisfy the requirement that the incident angle of total reflection is not less than a critical angle, the optical path has a design limitation of changing the angle. If the optical path is changed at a large angle, the incident angle of the photons incident on the optical path wall may be reduced, and the photons cannot be totally reflected on the optical path wall. Therefore, when the optical path needs to be changed at a large angle, a reflector is needed to reflect photons at a large angle, so that the optical path can be changed at a large angle.
However, the conventional optical waveguide circuit board uses only a fixed mirror for reflection. Such passive structures limit the possibilities of optical path design, because the optical path can only be transmitted to a fixed optical path in a fixed direction after being reflected by the reflecting mirror, and thus the optical path cannot be changed flexibly and actively while being changed at a large angle.
SUMMERY OF THE UTILITY MODEL
The present invention provides an active optical waveguide circuit board, which can actively adjust and change the optical path by changing the angle of the reflector, and thereby increase the possibility of the optical path design.
The novel active optical waveguide circuit board comprises an optical waveguide structure, an active reflection element, a circuit structure and a control chip. The optical waveguide structure comprises an optical waveguide core layer and an optical waveguide cladding layer, and is provided with a cavity. The optical waveguide cladding layer covers the optical waveguide core layer, and the optical waveguide core layer is communicated with the cavity. The active reflection element is disposed in the cavity and has a first mirror. The circuit structure is arranged on a first surface of the optical waveguide structure. The control chip is electrically connected to the active reflection element through the circuit structure. Wherein the refractive index of the optical waveguide core layer is greater than the refractive index of the optical waveguide cladding layer. The control chip generates a first control signal to the active reflection element, and the active reflection element actively changes the angle of the first mirror according to the first control signal. When a light source generates a light beam to enter the optical waveguide structure, the light beam enters the first reflector in the cavity through the optical waveguide core layer, and the direction of reflecting the light beam is determined according to the angle of the first reflector.
In one embodiment of the present invention, the circuit structure includes a set of first connection pads and an inner filling layer. The group of first connecting pads is exposed in the cavity of the optical waveguide structure and is electrically connected with the active reflection element. The internal filling layer is arranged in the cavity, arranged in a gap between the active reflection element and an inner wall surface of the cavity and surrounds the group of first connection pads.
In an embodiment of the present invention, the optical waveguide cladding layer includes a first optical waveguide cladding layer and a second optical waveguide cladding layer, and the first optical waveguide cladding layer and the second optical waveguide cladding layer are made of an optical dielectric material. The optical waveguide structure is provided with a second surface opposite to the first surface, the second surface of the optical waveguide structure is provided with a covering layer, and the first surface of the optical waveguide structure is provided with a substrate. The optical waveguide structure comprises a circuit groove, the circuit groove penetrates through the optical waveguide structure and is communicated with the first surface and the second surface of the optical waveguide structure. A second conductive pillar is disposed in the circuit groove. The circuit structure comprises a redistribution circuit layer arranged on the covering layer and a substrate circuit arranged on the substrate. The redistribution circuit layer is electrically connected to the substrate circuit on the substrate through the second conductive pillar in the circuit groove, and the substrate circuit is electrically connected to the active reflective element.
In an embodiment of the present invention, the substrate includes a first substrate surface and a second substrate surface opposite to each other, and the second substrate surface faces the optical waveguide structure. The substrate circuit and a group of first connecting pads are arranged on the surface of the second substrate. A group of second connecting pads is arranged on the surface of the first substrate of the substrate and is electrically connected with the substrate circuit through at least one substrate through hole. The control chip is disposed on the first substrate surface of the substrate, electrically connected to the set of second connection pads, and electrically connected to the active reflection element through the set of second connection pads, the substrate circuit, and the set of first connection pads. An outer filling layer is arranged in a gap between the control chip and the substrate, and the outer filling layer surrounds the group of second connecting pads.
In an embodiment of the present invention, the optical waveguide cladding layer includes a first optical waveguide cladding layer and a second optical waveguide cladding layer, and the first optical waveguide cladding layer and the second optical waveguide cladding layer are made of an optical dielectric material. The optical waveguide structure has a second surface opposite to the first surface, and the first surface of the optical waveguide structure is provided with a redistribution layer, and the second surface of the optical waveguide structure is provided with a substrate. The optical waveguide cladding layer further comprises a circuit groove, and the circuit groove penetrates through the optical waveguide cladding layer to communicate the redistribution circuit layer with the substrate. A second conductive column is arranged in the circuit groove. The circuit structure comprises a redistribution circuit arranged on the redistribution circuit layer and a substrate circuit arranged on the substrate. The redistribution circuit is electrically connected to the substrate circuit on the substrate through the second conductive pillar in the circuit groove, and the substrate circuit is electrically connected to the active reflective element. The control chip is disposed on the redistribution layer and electrically connected to the active reflective element via the redistribution layer and the substrate circuit.
In an embodiment of the present invention, the substrate includes a first substrate surface and a second substrate surface opposite to each other, and the second substrate surface faces the optical waveguide structure. The substrate circuit and a group of first connecting pads are arranged on the surface of the second substrate. The redistribution layer includes a first redistribution layer surface and a second redistribution layer surface opposite to each other, and the second redistribution layer surface is away from the optical waveguide structure. A group of second connecting pads is disposed on the surface of the second redistribution circuit and electrically connected to the redistribution circuit. The control chip is disposed on the surface of the second redistribution circuit of the redistribution circuit layer, and electrically connected to the set of second connection pads, and electrically connected to the active reflection element through the set of second connection pads, the redistribution circuit, the substrate circuit, and the set of first connection pads. An external filling layer is disposed in a gap between the control chip and the redistribution layer, and the external filling layer surrounds the set of second connection pads.
In one embodiment of the present invention, the optical waveguide cladding layer includes a first optical waveguide cladding layer and a second optical waveguide cladding layer, the first optical waveguide cladding layer is an optical dielectric material, and the second optical waveguide cladding layer is a silicon medium. The first surface of the optical waveguide structure is located on the second optical waveguide cladding layer, and the first surface is provided with a redistribution circuit layer. The circuit structure includes a redistribution circuit disposed on the redistribution circuit layer, and the redistribution circuit is electrically connected to the active reflective element. The control wafer is arranged on the redistribution circuit layer and is electrically connected with the active reflection element through the redistribution circuit.
In one embodiment of the present invention, the second optical waveguide cladding layer has a groove therein, and the groove is connected to the cavity. The groove is provided with at least one groove through hole and a group of first connecting pads. A third conductive pillar is disposed in the at least one groove through hole. The at least one groove through hole is communicated with the cavity and the redistribution circuit layer, and the group of first connection pads is electrically connected with the redistribution circuit of the redistribution circuit layer through the third conductive column in each groove through hole. The redistribution layer includes a first redistribution layer surface and a second redistribution layer surface opposite to each other, and the second redistribution layer surface is away from the optical waveguide structure. A group of second connecting pads is disposed on the surface of the second redistribution circuit, and the group of second connecting pads is electrically connected to the redistribution circuit. The active reflection element is arranged in the groove communicated with the cavity and is electrically connected with the group of first connecting pads. The control chip is disposed on the surface of the second redistribution circuit layer, electrically connected to the set of second connection pads, and electrically connected to the active reflection element through the set of second connection pads, the redistribution circuit, and the set of first connection pads. An external filling layer is disposed in a gap between the control chip and the redistribution layer, and the external filling layer surrounds the set of second connection pads.
In one embodiment of the present invention, the optical waveguide structure further includes an internal filling layer. The internal filling layer is arranged in the groove in the cavity, is arranged in a gap between the active reflection element and an inner wall surface in the groove in the cavity, and surrounds the group of first connection pads.
In one embodiment of the present invention, the optical waveguide core layer is a rectangular waveguide, and the optical waveguide cladding layer has four core surfaces surrounding and cladding the optical waveguide core layer. The second optical waveguide cladding layer covers one of the core surfaces of the optical waveguide core layer facing the redistribution layer, and the first optical waveguide cladding layer covers the other three core surfaces of the optical waveguide core layer.
In one embodiment of the present invention, the refractive index of the first optical waveguide cladding layer is greater than the refractive index of the second optical waveguide cladding layer.
In an embodiment of the present invention, the active reflection element further includes a first direction adjustment unit, a second mirror and a second direction adjustment unit. The first direction adjusting unit is connected with the first reflector and changes the angle according to the first control signal so as to adjust the direction of the light beam reflected by the first reflector. The second direction adjusting unit is connected with the second reflector. The second direction adjusting unit and the first direction adjusting unit are arranged in an array. The control chip generates a second control signal to the second direction adjustment unit of the active reflection element, and the second direction adjustment unit adjusts the angle reflected by the second reflector according to the second control signal. When the light beam is incident into the optical waveguide structure, the light beam is incident into the second reflector in the cavity, and the direction of reflecting the light beam is determined according to the angle of the second reflector.
In an embodiment of the present invention, the first reflector includes a convex lens surface and a reflective arc surface. When the light beam enters the first reflector, the light beam enters from the convex lens surface, is converged to a light-gathering point on the reflecting cambered surface, and is reflected from the reflecting cambered surface to be emitted out of the convex lens surface. When the light beam is reflected from the reflecting cambered surface and exits the convex lens surface, the light beam approaches a parallel light beam.
In one embodiment of the present invention, the active reflective device further includes a transparent mask. The transparent mask is disposed on the active reflection element to cover the first reflector.
The direction of the light beam reflected by the first reflector is changed through the control wafer, and the novel optical path after the light beam is reflected can be elastically adjusted. When the novel optical fiber is matched with a plurality of optical channels for use, the optical channels connected with the cavity can respectively receive the light beams reflected by the first reflector after the angle of the first reflector is changed. Therefore, the light path design possibility can be increased, and the light beam can be actively selected to be reflected to one of the light channels, so that the light path design method is favorable for logically changing the light beam and further making industrial contribution.
Drawings
Fig. 1A is a schematic diagram of a first embodiment of the present invention.
Fig. 1B is a schematic diagram of the active optical waveguide circuit board according to the present invention reflecting a light beam according to the first embodiment.
Fig. 2A, fig. 2B, fig. 2C, fig. 2D, fig. 2E, fig. 2F, fig. 2G, fig. 2H, fig. 2I, fig. 2J, and fig. 2K are flow charts illustrating a manufacturing process of a first embodiment of the novel active optical waveguide circuit board.
Fig. 3 is a schematic cross-sectional view of an optical waveguide structure of the active optical waveguide circuit board according to the first embodiment of the present invention.
Fig. 4 is a schematic diagram of a second embodiment of the active optical waveguide circuit board of the present invention.
Fig. 5A, 5B, 5C, 5D, 5E, 5F, 5G, 5H and 5I are flow charts illustrating a second embodiment of the present invention for fabricating an active optical waveguide circuit board.
Fig. 6 is a diagram illustrating a third embodiment of the active optical waveguide circuit board of the present invention.
Fig. 7A, 7B, 7C, 7D, 7E, 7F, 7G, 7H and 7I are flow charts illustrating the third embodiment of the present invention for fabricating an active optical waveguide circuit board.
Fig. 8 is a schematic cross-sectional view of an optical waveguide structure of a third embodiment of the active optical waveguide circuit board of the present invention.
Fig. 9 is a schematic diagram of an active reflective element of the active optical waveguide circuit board of the present invention.
Fig. 10A and 10B are schematic diagrams illustrating the light beam reflected by a first reflector of the active optical waveguide circuit board according to the present invention.
Reference numerals
10 base plate
11 substrate circuit
12 first substrate through-hole
13 second substrate Via
14 first connection pad
15 second connecting pad
16: third connecting pad
17 fourth connecting pad
18: fifth connecting pad
19 sixth connecting pad
20 cladding layer of optical waveguide
20a first optical waveguide cladding layer
20b cladding layer of second optical waveguide
23: a groove
25 groove through hole
26 seventh connecting pad
27: eighth connecting pad
28 ninth connecting pad
30 cavity (c)
40 optical waveguide core layer
41 core layer Circuit
50 active reflection element
51 transparent mask
60 inner filling layer
70 coating layer
80 control wafer
90 outer filling layer
100 optical waveguide structure
101 first substrate surface
102 surface of the second substrate
110 line structure
111 first surface
112 second surface
120 light source
121 beam of light
130 copper foil layer
131 bearing plate
140 redistribution layer
141 redistribution circuit
142 first redistribution layer surface
143 second redistribution layer on the surface
150 first conductive column
151 second conductive column
152 third conductive column
153 fourth conductive column
161 line groove
162 line via
170 first circuit layer
180 second circuit layer
201 first core surface
202 second core surface
203 the third core surface
204 fourth core surface
500 reflection element pin
510 first direction adjusting unit
511 first reflecting mirror
512 convex lens surface
513 reflective cambered surface
514 spot concentration point
520 second direction adjustment unit
521 second reflecting mirror
800 control chip pin
A. B, C, D are cutting lines
Detailed Description
Referring to fig. 1A, the present invention is an active optical waveguide circuit board. The active optical waveguide circuit board includes an active reflective device 50, a control chip 80, an optical waveguide structure 100 and a circuit structure 110. The optical waveguide structure 100 includes an optical waveguide cladding layer 20 and an optical waveguide core layer 40, and has a cavity 30. The optical waveguide cladding layer 20 wraps the optical waveguide core layer 40, and the optical waveguide core layer 40 communicates with the cavity 30. The active reflection element 50 is disposed in the cavity 30 and has a first mirror 511. The optical waveguide structure 100 has a first surface 111 and a second surface 112 opposite to the first surface 111. The circuit structure 110 is disposed on the first surface 111 of the optical waveguide structure 100, and the control chip 80 is electrically connected to the active reflective element 50 through the circuit structure 110. Wherein the refractive index of the optical waveguide core layer 40 is greater than the refractive index of the optical waveguide cladding layer 20.
For example, please refer to fig. 1B, which is associated with a light source 120 of the present invention disposed on one side of the optical waveguide structure 100. The control chip 80 generates a first control signal to the active reflection element 50, and the active reflection element 50 actively changes an angle of the first mirror 511 of a first direction adjustment unit 510 according to the first control signal. When the light source 120 generates a light beam 121 to be incident into the optical waveguide structure 100, the light beam 121 is incident into the first reflecting mirror 511 connected to the first direction adjusting unit 510 in the cavity 30 through the optical waveguide core layer 40, and the direction of reflecting the light beam 121 is determined according to the angle of the first reflecting mirror 511. The light beam 121 reflected by the first mirror 511 will approach a parallel light beam. In conjunction with other optical paths or other optical waveguides in this embodiment, after the present invention actively changes the direction of the light beam 121 reflected by the first reflector 511, it is more advantageous to receive the parallel light beam, so that the incident light intensity is approximately maintained at the incident light intensity level.
In the present embodiment, the first surface 111 is a surface of the optical waveguide structure 100 facing a substrate 10, and the second surface 112 is another surface of the optical waveguide structure 100 facing away from the substrate 10.
Fig. 2A, fig. 2B, fig. 2C, fig. 2D, fig. 2E, fig. 2F, fig. 2G, fig. 2H, fig. 2I, fig. 2J, and fig. 2K are manufacturing flow charts of the first embodiment of the active optical waveguide circuit board of the present invention.
Referring to fig. 2A, first, a substrate 10 having a substrate circuit 11 is prepared. The material of the substrate 10 may be organic material or glass, and the substrate 10 has a first substrate surface 101 and a second substrate surface 102 opposite to each other. The substrate 10 is formed with at least one through hole, such as a first substrate through hole 12 and a second substrate through hole 13 respectively communicating the first substrate surface 101 and the second substrate surface 102 as shown in fig. 2A. In this embodiment, the method for forming the substrate circuit 11 on the substrate 10 is a general method for manufacturing circuit board circuits, and is not described herein again. Further, the substrate circuit 11 includes a group of first connection pads 14, a group of third connection pads 16 and a group of fourth connection pads 17 formed on the second substrate surface 102 of the substrate 10, and a group of second connection pads 15 formed on the first substrate surface 101 of the substrate 10. The set of first connection pads 14 and the second connection pads 15 are electrically connected through the substrate circuit 11. A first conductive pillar 150 formed by electroplating is respectively disposed in the first substrate through hole 12 and the second substrate through hole 13, and the set of fourth connecting pads 17 on the second substrate surface 102 is electrically connected to the set of second connecting pads 15 on the first substrate surface 101 through the first conductive pillar 150 in the first substrate through hole 12 and the second substrate through hole 13, respectively.
Referring to fig. 2B, a first optical waveguide cladding layer 20a is disposed on the second substrate surface 102 of the substrate 10, such that the first optical waveguide cladding layer 20a covers the set of first connection pads 14 and the third connection pads 16. In the present embodiment, the first optical waveguide cladding layer 20a is an optical dielectric material, and the first optical waveguide cladding layer 20a is disposed on the second substrate surface 102 of the substrate 10 in a pressing manner.
Referring to fig. 2C, a portion of the first optical waveguide cladding layer 20a near the first connection pads 14 is removed, so as to form a cavity 30, and the set of first connection pads 14 is disposed in the cavity 30. And, a portion of the first optical waveguide clad layer 20a above the third connecting pad 16 is removed to form a wiring groove 161 exposing the third connecting pad 16. In this embodiment, a portion of the first optical waveguide cladding layer 20a is removed by an exposure and development process.
Referring to fig. 2D, an optical waveguide core layer 40 is disposed on the first optical waveguide cladding layer 20, and the optical waveguide core layer 40 covers the set of first connection pads 14 and the third connection pads 16. In the present embodiment, the optical waveguide core layer 40 is disposed on the first optical waveguide cladding layer 20a in a pressing manner.
Referring to fig. 2E, a portion of the optical waveguide core layer 40 near the set of first connection pads 14 is removed, so as to continuously form the cavity 30. And, a portion of the optical waveguide core layer 40 above the third connecting pad 16 is removed to continuously form the circuit groove 161, exposing the third connecting pad 16. In this embodiment, a portion of the optical waveguide core layer 40 is removed by an exposure development process.
Referring to fig. 2F, a second optical waveguide cladding layer 20b is disposed on the optical waveguide core layer 40, such that the second optical waveguide cladding layer 20b covers the set of first connection pads 14 and the third connection pads 16.
Referring to fig. 3, fig. 3 is a cross-sectional view of another view angle after being cut according to a cut line a in fig. 2F. Correspondingly, fig. 2F is a schematic cross-sectional view of the view angle of fig. 3 after being cut by a cut line B. In the present embodiment, the first optical waveguide cladding layer 20a and the second optical waveguide cladding layer 20b are made of the same optical dielectric material, and the combination of the first optical waveguide cladding layer 20a and the second optical waveguide cladding layer 20b is the optical waveguide cladding layer 20 that covers the optical waveguide core layer 40. As shown in fig. 3, the optical waveguide core layer 40 is a rectangular waveguide, and the optical waveguide cladding layer 20 surrounds and wraps the optical waveguide core layer 40. The refractive index of the optical waveguide core layer 40 is greater than the refractive index of the first optical waveguide clad layer 20a and the refractive index of the second optical waveguide clad layer 20b, and the refractive index of the first optical waveguide clad layer 20a and the refractive index of the second optical waveguide clad layer 20b are both the refractive index of the optical waveguide clad layer 20.
Referring to fig. 2G, a portion of the second optical waveguide cladding layer 20b near the set of first connection pads 14 is removed to continuously form the cavity 30. And, a portion of the second optical waveguide clad layer 20b above the third connecting pad 16 is removed to continuously form the circuit groove 161, exposing the third connecting pad 16. The circuit groove 161 penetrates through the optical waveguide structure 100 and connects the first surface 111 and the second surface 112 of the optical waveguide structure 100.
Referring to fig. 2H, the active reflective element 50 is disposed in the cavity 30. In detail, the active reflection element 50 has a set of reflection element pins 500, the first direction adjustment unit 510 and the first mirror 511. The reflective device lead 500 is electrically connected to the set of first connection pads 14. An internal filling layer 60 is filled in the cavity 30, and the internal filling layer 60 is filled in a gap between the first direction adjusting unit 510 of the active reflection element 50 and the inner wall surface of the cavity 30. Thus, the inner filling layer 60 is advantageous to fix the active reflection element 50 in the cavity 30, and prevent the active reflection element 50 from shaking. The first mirror 511 faces the optical waveguide core layer 40, and the first mirror 511 can be adjusted by the first direction adjusting unit 510. In the present embodiment, the active reflective element 50 is a Digital Micromirror Device (DMD). The set of first connection pads 14 and the set of fourth connection pads 17 in the substrate circuit 11 are electrically connected.
Referring to fig. 2I, a cladding layer 70 is disposed on the second optical waveguide cladding layer 20b, such that the cladding layer 70 covers the second optical waveguide cladding layer 20b, the cavity 30 and the circuit groove 161. Thus, the active reflective element 50 in the cavity 30 can be sealed to prevent contamination and dust from contacting the first mirror 511. In the present embodiment, the covering layer 70 is disposed on the optical waveguide cladding layer 20 in a pressing manner, and the covering layer 70 is a photosensitive dielectric material (PID).
Referring to FIG. 2J, a portion of the capping layer 70 above the third bonding pad 16 is removed to expose the third bonding pad 16. In the present embodiment, a portion of the covering layer 70 above the third connecting pad 16 is removed by an exposure and development process.
Referring to fig. 2K, a Redistribution Layer (RDL) 140 is disposed on the covering Layer 70, and a second conductive pillar 151 is formed in the circuit groove 161 by electroplating. The redistribution layer 140 includes a fifth bonding pad 18, and the fifth bonding pad 18 of the redistribution layer 140 is electrically connected to the third bonding pad 16 of the substrate circuit 11 through the second conductive pillar 151 in the circuit groove 161. Thus, the redistribution layer 140 is electrically connected to the third connection pads 16 and is further electrically connected to the second connection pads 15 on the first substrate surface 101 of the substrate 10 through the substrate trace 11. In the present embodiment, the method for forming the redistribution layer 140 on the cover layer 70 is a general method for manufacturing circuit boards, and is not described herein again. The control chip 80 has a set of control chip pins 800, and the control chip pins 800 are electrically connected to the second connecting pads 15 on the substrate 10. An outer filling layer 90 is further disposed in the gap between the control chip 80 and the substrate 10, and the outer filling layer 90 surrounds and covers the second connecting pad 15. Thus, the outer filling layer 90 is favorable for firmly fixing the control chip 80 on the first substrate surface 101 of the substrate 10. In the present embodiment, the circuit structure 110 disposed on the first surface 111 of the optical waveguide structure 100 is the substrate circuit 11 on the substrate 10.
Referring to fig. 4, fig. 4 is a schematic diagram of a second embodiment of the active optical waveguide circuit board according to the present invention. In this embodiment, the optical waveguide cladding layer 20 includes the first optical waveguide cladding layer 20a and the second optical waveguide cladding layer 20b that clad the optical waveguide core layer 40, and the first optical waveguide cladding layer 20a and the second optical waveguide cladding layer 20b are made of the same optical dielectric material. The optical waveguide structure 100 has the first surface 111 and the second surface 112 opposite to each other, the redistribution layer 140 is disposed on the first surface 111 of the optical waveguide structure 100, and the substrate 10 is disposed on the second surface 112 of the optical waveguide structure 100. The optical waveguide cladding layer 100 further includes the second conductive pillar 151 in the circuit groove 161, and the second conductive pillar 151 in the circuit groove 161 penetrates the optical waveguide cladding layer 100 to communicate the redistribution layer 140 and the substrate 10. The circuit structure 110 includes a redistribution layer 141 disposed on the redistribution layer 140 and the substrate circuit 11 disposed on the substrate 10. In detail, the redistribution circuit 141 is electrically connected to the third connecting pad 16 in the substrate circuit 11 on the substrate 10 through the second conductive pillar 151 in the circuit groove 161, and the third connecting pad 16 in the substrate circuit 11 is electrically connected to the active reflective element 50. The control chip 80 is disposed on the redistribution layer 140, and the control chip 80 is electrically connected to the active reflective element 50 through the redistribution layer 141 and the substrate circuit 11.
Fig. 5A, 5B, 5C, 5D, 5E, 5F, 5G, 5H and 5I are flow charts illustrating the fabrication of the active optical waveguide circuit board of the present invention in the second embodiment.
Referring to fig. 5A, first, a carrier 131 having a copper foil layer 130 is prepared. In the present embodiment, the carrier 131 is made of a metal material, and the copper foil layer 130 is formed on the harder carrier 131 by an electroplating process.
Referring to fig. 5B, the substrate circuit 11 is disposed on the copper foil layer 130. In the present embodiment, the method of forming the substrate circuit 11 on the copper foil layer 130 is a method of manufacturing a circuit board circuit, and is not repeated herein. Further, the substrate circuit 11 includes the set of first connection pads 14 and the third connection pads 16 formed on the copper foil layer 130.
Referring to fig. 5C, the substrate 10 is disposed on the copper foil layer 130 and the substrate circuit 11.
Referring to fig. 5D, a portion of the substrate 10 is removed to expose the substrate circuit 11 disposed on the copper foil layer 130, i.e., to expose the set of first connection pads 14 and the third connection pads 16.
Referring to fig. 5E, the first optical waveguide cladding layer 20a is disposed on the substrate 10 and the substrate circuit 11, and a portion of the first optical waveguide cladding layer 20a near the group of first connection pads 14 is removed, so as to form an original shape of the cavity 30, and the group of first connection pads 14 is disposed in the cavity 30. And, a portion of the first optical waveguide clad layer 20a above the third connecting pad 16 is removed to form the circuit groove 161, exposing the third connecting pad 16.
Referring to fig. 5F, the optical waveguide core layer 40 is disposed on the first optical waveguide cladding layer 20a, and a portion of the optical waveguide core layer 40 near the set of first connection pads 14 is removed, so as to continuously form the cavity 30. And, removing all the optical waveguide core layer 40 above the third bonding pad 16 to continuously form the circuit groove 161 and expose the third bonding pad 16. Further, the second optical waveguide cladding layer 20b is disposed, and a portion of the second optical waveguide cladding layer 20b near the group of first connection pads 14 is removed, so as to continuously form the cavity 30. And, the second optical waveguide cladding layer 20b on the upper portion of the third connecting pad 16 is removed to continuously form the circuit groove 161, exposing the third connecting pad 16. Next, a connection circuit 21 is disposed on the second optical waveguide cladding layer 20b and the second conductive pillar 151 is formed in the circuit groove 161 by electroplating. The connection circuit 21 includes a sixth connection pad 19, and the sixth connection pad 19 extends from the second optical waveguide cladding layer 20b to the third connection pad 16 on the substrate 10 through the second conductive pillar 151 in the circuit groove 161, and is electrically connected to the set of first connection pads 14 through the third connection pad 16.
Referring to fig. 5G, the active reflection element 50 is disposed in the cavity 30. The set of reflective device pins 500 of the active reflective device 50 is electrically connected to the set of first connection pads 14. The internal filling layer 60 is filled in the cavity 30, and the internal filling layer 60 is filled in a gap between the first direction adjusting unit 510 of the active reflection element 50 and the inner wall surface of the cavity 30. Thus, the inner filling layer 60 is advantageous to fix the active reflection element 50 in the cavity 30, and prevent the active reflection element 50 from shaking. The first mirror 511 faces the optical waveguide core layer 40, and the first mirror 511 can be adjusted by the first direction adjusting unit 510. The redistribution layer 140 is provided on the optical waveguide cladding layer 20 and the connection circuit 21. The redistribution layer 140 is provided with the redistribution layer 141. The redistribution layer 140 includes a first redistribution surface 142 and a second redistribution surface 143 opposite to each other, and the second redistribution surface 143 is away from the optical waveguide structure 100. The second redistribution circuit surface 143 is disposed with the set of second connection pads 15, and the set of second connection pads 15 is electrically connected to the redistribution circuit 141. Further, the redistribution circuit 141 is electrically connected to the sixth connection pad 19 of the connection circuit 21, and the sixth connection pad 19 of the connection circuit 21 is electrically connected to the third connection pad 16 of the substrate circuit 11, the group of first connection pads 14 and the active reflective element 50 through the second conductive pillar 151. Therefore, the set of second connecting pads 15 on the second redistribution circuit surface 143 is electrically connected to the active reflection element 50.
Referring to fig. 5H, the copper foil layer 130 and the carrier 131 disposed on the substrate 10 are removed. In the present embodiment, the copper foil layer 130 and the carrier 131 on the substrate 10 are washed away by a general etching process.
Referring to FIG. 5I, the control chip 80 is disposed on the set of second connecting pads 15 on the second redistribution layer surface 143 of the redistribution layer 140. The gap between the control chip 80 and the redistribution layer 140 is further provided with the outer filling layer 90, and the outer filling layer 90 surrounds and covers the second connecting pad 15. Thus, the underfill layer 90 advantageously secures the control chip 80 to the second redistribution layer 140 on the second redistribution layer 143.
Referring to fig. 6, fig. 6 is a schematic diagram of a third embodiment of the active optical waveguide circuit board according to the present invention. In this embodiment, the optical waveguide cladding layer 20 includes the first optical waveguide cladding layer 20a and the second optical waveguide cladding layer 20b that clad the optical waveguide core layer 40, and the first optical waveguide cladding layer 20a is an optical dielectric material and the second optical waveguide cladding layer 20b is a silicon intermediate material. The first surface 111 of the optical waveguide structure 100 is located on the second optical waveguide cladding layer 20b, and the redistribution layer 140 is disposed on the first surface 111. The circuit structure 110 includes the redistribution layer 141 disposed on the redistribution layer 140, and the redistribution layer 141 is electrically connected to the active reflective element 50.
Further, the second optical waveguide cladding layer 20b has a groove 23 therein, and the groove 23 communicates with the cavity 30. The groove 23 has at least one groove through hole 25 therein, and the set of first connection pads 14 is disposed therein. A third conductive pillar 152 is disposed in the at least one recessed via 25. The at least one through hole 25 is connected to the cavity 30 and the redistribution layer 140, and the set of first connection pads 14 is electrically connected to the redistribution layer 141 of the redistribution layer 140 through the third conductive pillar 152 in each through hole 25.
The redistribution layer 140 includes a first redistribution surface 142 and a second redistribution surface 143 opposite to each other, and the second redistribution surface 143 faces away from the optical waveguide structure. The second redistribution circuit surface 143 is disposed with the set of second connection pads 15, and the set of second connection pads 15 is electrically connected to the redistribution circuit 141. The active reflection element 50 is disposed in the groove 23 communicating with the cavity 30 and electrically connected to the set of first connection pads 14. The control chip 80 is disposed on the second redistribution trace surface 143 of the redistribution trace layer 140, and is electrically connected to the set of second connection pads 15, and is electrically connected to the active reflection element 50 through the set of second connection pads 15, the redistribution trace 141 and the set of first connection pads 14.
Fig. 7A, 7B, 7C, 7D, 7E, 7F, 7G, 7H and 7I are flow charts illustrating the manufacturing process of the active optical waveguide circuit board according to the third embodiment of the present invention.
Referring to fig. 7A, first, the second optical waveguide cladding layer 20b is prepared.
Referring to fig. 7B, the trench 23, the at least one trench via 25 and the line via 162 are formed in the second optical waveguide cladding layer 20B. In this embodiment, the groove 23 and the at least one groove via 25 are formed by a photolithography process or laser ablation of the second optical waveguide cladding layer 20b, and the groove 23 is formed by a wet etching process.
Referring to fig. 7C, a first circuit layer 170 is disposed on the upper surface of the second optical waveguide cladding layer 20b, a second circuit layer 180 is disposed on the lower surface of the second optical waveguide cladding layer 20b, the second conductive pillars 151 are formed in the circuit through holes 162 by electroplating, and the third conductive pillars 152 are formed in the set of groove through holes 25 by electroplating. The lower surface of the second optical waveguide cladding layer 20b, i.e., the surface of the second optical waveguide cladding layer 20b having the groove 23. The first circuit layer 170 includes the set of fourth connecting pads 17 and the sixth connecting pad 19, and the second circuit layer 180 includes a seventh connecting pad 26 and an eighth connecting pad 27. The set of fourth connecting pads 17 are electrically connected to the set of first connecting pads 14 through the third conductive pillars 152 in the set of groove vias 25, respectively. The sixth connecting pad 19 is electrically connected to the seventh connecting pad 26 on the lower surface of the second optical waveguide cladding layer 20b through the second conductive pillar 151 in the circuit through hole 162. In the second circuit layer 180, the seventh connecting pad 26 is electrically connected to the eighth connecting pad 27.
Referring to fig. 7D, the redistribution layer 140 is disposed on the second optical waveguide cladding layer 20b. The redistribution layer 140 is provided with the redistribution traces 141. The redistribution layer 140 includes a first redistribution surface 142 and a second redistribution surface 143 opposite to each other, and the second redistribution surface 143 faces away from the optical waveguide structure 100. The second redistribution layer surface 143 is provided with the set of second connection pads 15, and the set of second connection pads 15 are electrically connected to the redistribution layer 141. Further, the redistribution circuit 141 is electrically connected to the set of fourth bonding pads 17 of the first circuit layer 170, and the set of fourth bonding pads 17 is electrically connected to the set of first bonding pads 14. Therefore, the set of second connecting pads 15 on the second redistribution trace surface 143 is electrically connected to the set of first connecting pads 14.
Referring to fig. 7E, the optical waveguide core layer 40 is disposed on the side of the second optical waveguide cladding layer 20b having the groove 23. In the present embodiment, the optical waveguide core layer 40 is disposed on the second optical waveguide cladding layer 20b in a bonding manner, and the cavity 30 is formed by exposure and development. In addition, the eighth connection pad 27 is also exposed when the optical waveguide core layer 40 is mounted on the second optical waveguide cladding layer 20b.
Referring to FIG. 7F, a core layer circuit 41 is disposed on the optical waveguide core layer 40. The core layer circuit 41 includes a ninth connecting pad 28 and a fourth conductive pillar 153. The fourth conductive pillar 153 is formed on the optical waveguide core layer 40 by electroplating where the eighth connection pad 27 is exposed. The ninth connecting pad 28 of the core layer circuit 41 is electrically connected to the eighth connecting pad 27 through the fourth conductive pillar 153, so that the core layer circuit 41 and the first circuit layer 170 form an electrical connection relationship.
Referring to fig. 7G, the active reflective element 50 is packaged and disposed in the groove 23, such that the group of reflective element pins 500 of the active reflective element 50 is electrically connected to the group of first connection pads 14, and the active reflective element 50 is electrically connected to the first circuit layer 170 on the upper surface of the second optical waveguide cladding layer 20b through the group of first connection pads 14. The internal filling layer 60 is filled in the groove 23. The internal filling layer 60 fills a gap between the active reflection element 50 and an inner wall surface of the groove 23 in the cavity 30, and the internal filling layer 60 surrounds the set of first connection pads 14 and contacts the first direction adjustment unit 510 of the active reflection element 50. Thus, the internal filling layer 60 is advantageous to fix the first direction adjustment unit 510 in the groove 23.
Referring to fig. 7H, the first optical waveguide cladding layer 20a is disposed on the optical waveguide core layer 40 and the core layer circuit 41, such that the first optical waveguide cladding layer 20a covers the cavity 30, the active reflective element 50 and the groove 23, and the core layer circuit 41 on the optical waveguide core layer 40. Thus, the optical waveguide core layer 40 is hermetically coated by the first optical waveguide cladding layer 20a and the second optical waveguide cladding layer 20b, and the combination of the first optical waveguide cladding layer 20a and the second optical waveguide cladding layer 20b is the optical waveguide cladding layer 20 described herein.
Referring to FIG. 7I, the control chip 80 is disposed on the second redistribution surface 143 of the redistribution layer 140, and the control chip leads 800 are electrically connected to the second bonding pads 15 on the second redistribution surface 143. A gap between the control chip 80 and the redistribution layer 140 is further provided with the outer filling layer 90, and the outer filling layer 90 surrounds the set of second connection pads 15. Thus, the outer filling layer 90 is advantageous to secure the control chip 80 on the second redistribution layer 143 of the redistribution layer 140.
Referring to fig. 8, fig. 8 is a cross-sectional view of another view angle after being cut according to a cut line C in fig. 7H. Correspondingly, fig. 7H is a schematic cross-sectional view of the view angle of the cut line D in fig. 8. In the present embodiment, the optical waveguide core layer 40 is a rectangular waveguide, and the optical waveguide cladding layer 20 has four core surfaces surrounding and cladding the optical waveguide core layer 40, namely, a first core surface 201, a second core surface 202, a third core surface 203 and a fourth core surface 204. The first core surface 201, the second core surface 202, and the third core surface 203 are formed by coating three surfaces of the optical waveguide core layer 40 with the second optical waveguide cladding layer 20b, and the fourth core surface 204 is formed by coating the other surface of the optical waveguide core layer 40 with the first optical waveguide cladding layer 20a.
In addition, the refractive index of the first optical waveguide clad layer 20a is greater than that of the second optical waveguide clad layer 20b, and the refractive index of the optical waveguide core layer 40 is greater than that of the first optical waveguide clad layer 20a. In detail, in the present embodiment, the optical waveguide core layer 40 has a refractive index of 1.60, the first optical waveguide clad layer 20a has a refractive index of 1.59, and the second optical waveguide clad layer 20b has a refractive index of 1.55. The second optical waveguide cladding 20b is a silicon interposer with a Coefficient of Thermal Expansion (CTE) of about 3 to 5 ppm, which has good dimensional stability and is suitable for encapsulating the active reflection element 50 on the second optical waveguide cladding 20b.
Referring to fig. 9, further, the active reflection element 50 further includes a second direction adjustment unit 520 and a second mirror 521 connected to the second direction adjustment unit 520. In the cavity 30, the second direction adjustment units 520 and the first direction adjustment units 510 are arranged in an array. The control chip 80 generates a second control signal to the second direction adjustment unit 520 of the active reflection element 50, and the second direction adjustment unit 520 adjusts the angle of the second mirror 521 according to the second control signal. When the light beam 121 enters the optical waveguide structure 100, the light beam 121 enters the second mirror 521 in the cavity 30, and the direction of reflecting the light beam 121 is determined according to the angle of the second mirror 521. Thus, the present invention can actively control the first mirror 511 and the second mirror 521 to reflect the light beam 121, so as to change the optical path direction of the light beam 121 in an integrated optical circuit using the optical waveguide structure 100. In this embodiment, the specification of the second direction adjustment unit 520 is the same as that of the first direction adjustment unit 510, and the specification of the second reflecting mirror 521 is the same as that of the first reflecting mirror 511, but the axial direction in which the second direction adjustment unit 520 adjusts the angle of the second reflecting mirror 521 is different from the axial direction in which the first direction adjustment unit 510 adjusts the angle of the first reflecting mirror 511.
In addition, the active reflection element 50 may further include more direction adjustment units and corresponding mirrors. The direction adjusting units are arranged in an array like the second direction adjusting unit 520 and the first direction adjusting unit 510, so as to control the plurality of mirrors in an array manner to change the direction of the reflected light beam 121, so that the light beam 121 can be reflected and then travel in a plurality of different optical paths in cooperation with the present invention, thereby achieving the efficacy of a logical optical path.
The active reflective element 50 further includes a light transmissive mask 51. The transparent mask 51 is disposed on the active reflection element 50 to cover the first reflector 511, so as to prevent dirt from contacting the first reflector 511 and maintain the cavity size in the mask 51 stable. In detail, the transparent mask 51 is covered on the first direction adjustment unit 510, the second direction adjustment unit 520 and the other direction adjustment units, so as to protect the first reflector 511, the second reflector 512 and the other corresponding reflectors from being touched by any dirt and maintain the stable size of the cavity in the mask 51, thereby maintaining the cleanness and normal operation of the active reflective element 50, and improving the service life and efficiency of the active reflective element 50.
Referring to fig. 10A and 10B, the first reflector 511 includes a convex lens surface 512 and a reflective arc surface 513. When the light beam 121 enters the first reflector 511, the light beam 121 enters the convex lens surface 512, and is collected to a light-collecting point 514 on the reflective arc surface 513, and is reflected from the reflective arc surface 513 to exit the convex lens surface 512. In the background art, although a reflector has an incident mirror surface with a convex lens, it only uses a planar reflector surface, so that the light spot on the reflector surface cannot be well focused and reflected, and the light spot cannot keep a better light intensity during reflection. In detail, since the angles of the incident plane mirror surface of the light beam 121 are different after being refracted at the incident mirror surface of the convex lens, the light beam 121 travels to the reflecting mirror surface at different incident angles, and thus cannot be well focused on a plane. For a planar mirror surface, when the light beam 121 is incident from the convex lens surface 512 of the present invention, the light beam 121 with different incident angles will be reflected by the reflective arc surface 513 in an arc shape and then be focused on the light-focusing point 514, so as to form the light-focusing point 514 with stronger light intensity on the reflective arc surface 513. When the light beam 121 is reflected by the reflective arc surface 513 and exits the convex lens surface 512, the light beam can be refracted by the convex lens surface 512 to approach the parallel light beam and has a better light intensity.
Synthesize above-mentioned, this novel active optical waveguide circuit board that provides. The structure of the active optical waveguide circuit board is slightly changed in the different embodiments, but the active reflection element 50, the control chip 80, the optical waveguide structure 100 and the circuit structure 110 of the present invention have the same function and efficacy in operation, that is, the direction of the light beam 121 reflected by the first reflector 511 is actively changed by the control chip 80, so as to flexibly adjust the direction of the light path after the light beam 121 is reflected. When the novel optical path is used with a plurality of optical paths, and when the novel optical path has the second reflector 512 and other reflectors, these optical paths will connect to the cavity 30, and receive the reflected light beam 121 after the angles of the first reflector 511, the second reflector 512, or other reflectors are changed, respectively. Thus, the present invention can increase the possibility of optical path design, and actively select which one of the optical channels the light beam 121 is reflected to, which is beneficial to the logical design of the light beam 121, thereby making contributions in the integrated optics industry.

Claims (14)

1. An active optical waveguide circuit board, comprising:
an optical waveguide structure including an optical waveguide core layer and an optical waveguide cladding layer, and having a cavity; wherein the optical waveguide cladding layer coats the optical waveguide core layer, and the optical waveguide core layer is communicated with the cavity;
an active reflection element disposed in the cavity and having a first reflector;
a circuit structure disposed on a first surface of the optical waveguide structure;
a control chip electrically connected to the active reflection element through the circuit structure;
wherein the refractive index of the optical waveguide core layer is greater than that of the optical waveguide cladding layer;
wherein the control chip generates a first control signal to the active reflection element, and the active reflection element actively changes the angle of the first mirror according to the first control signal;
when a light source generates a light beam to be emitted into the optical waveguide structure, the light beam is emitted into the first reflector in the cavity through the optical waveguide core layer, and the direction of reflecting the light beam is determined according to the angle of the first reflector.
2. The active optical waveguide circuit of claim 1, wherein the circuit structure comprises:
a group of first connecting pads exposed in the cavity of the optical waveguide structure and electrically connected to the active reflective element;
an internal filling layer is arranged in the cavity, arranged in a gap between the active reflection element and an inner wall surface of the cavity and surrounds the group of first connection pads.
3. The active optical waveguide circuit board of claim 1,
the optical waveguide cladding layer comprises a first optical waveguide cladding layer and a second optical waveguide cladding layer which are used for cladding the optical waveguide core layer, and the first optical waveguide cladding layer and the second optical waveguide cladding layer are made of optical dielectric materials respectively;
the optical waveguide structure is provided with a second surface opposite to the first surface, the second surface of the optical waveguide structure is provided with a covering layer, and the first surface of the optical waveguide structure is provided with a substrate;
the optical waveguide structure comprises a circuit groove, the circuit groove penetrates through the optical waveguide structure and is communicated with the first surface and the second surface of the optical waveguide structure;
a second conductive column is arranged in the circuit groove;
the circuit structure comprises a redistribution circuit layer arranged on the covering layer and a substrate circuit arranged on the substrate; the redistribution circuit layer is electrically connected to the substrate circuit on the substrate through the second conductive pillar in the circuit groove, and the substrate circuit is electrically connected to the active reflective element.
4. The active optical waveguide circuit board of claim 3,
the substrate comprises a first substrate surface and a second substrate surface which are opposite, and the second substrate surface faces the optical waveguide structure;
the substrate circuit and a group of first connecting pads are arranged on the surface of the second substrate;
a group of second connecting pads are arranged on the surface of the first substrate of the substrate and are electrically connected with the substrate circuit through at least one substrate through hole;
the control chip is arranged on the surface of the first substrate of the substrate, is electrically connected with the group of second connecting pads and is electrically connected with the active reflection element through the group of second connecting pads, the substrate circuit and the group of first connecting pads;
an outer filling layer is arranged in a gap between the control chip and the substrate, and the outer filling layer surrounds the group of second connecting pads.
5. The active optical waveguide circuit board of claim 1,
the optical waveguide cladding layer comprises a first optical waveguide cladding layer and a second optical waveguide cladding layer which are used for cladding the optical waveguide core layer, and the first optical waveguide cladding layer and the second optical waveguide cladding layer are made of optical dielectric materials respectively;
the optical waveguide structure is provided with a second surface opposite to the first surface, the first surface of the optical waveguide structure is provided with a rewiring circuit layer, and the second surface of the optical waveguide structure is provided with a substrate;
the optical waveguide coating layer further comprises a circuit groove which penetrates through the optical waveguide coating layer so as to be communicated with the redistribution circuit layer and the substrate;
a second conductive column is arranged in the circuit groove;
the circuit structure comprises a redistribution circuit arranged on the redistribution circuit layer and a substrate circuit arranged on the substrate; the redistribution circuit is electrically connected with the substrate circuit on the substrate through the second conductive column in the circuit groove, and the substrate circuit is electrically connected with the active reflection element;
the control chip is disposed on the redistribution layer and electrically connected to the active reflective element via the redistribution layer and the substrate circuit.
6. The active optical waveguide circuit board of claim 5,
the substrate comprises a first substrate surface and a second substrate surface which are opposite, and the second substrate surface faces the optical waveguide structure; the substrate circuit and a group of first connecting pads are arranged on the surface of the second substrate;
the redistribution layer comprises a first redistribution layer surface and a second redistribution layer surface which are opposite, and the second redistribution layer surface is deviated from the optical waveguide structure; a group of second connecting pads are arranged on the surface of the second redistribution circuit and electrically connected with the redistribution circuit;
the control chip is arranged on the surface of the second redistribution circuit of the redistribution circuit layer, is electrically connected with the group of second connecting pads, and is electrically connected with the active reflection element through the group of second connecting pads, the redistribution circuit, the substrate circuit and the group of first connecting pads;
an external filling layer is disposed in a gap between the control chip and the redistribution layer, and the external filling layer surrounds the set of second connection pads.
7. The active optical waveguide circuit board of claim 1,
the optical waveguide cladding layer comprises a first optical waveguide cladding layer and a second optical waveguide cladding layer which clad the optical waveguide core layer, the first optical waveguide cladding layer is made of an optical dielectric material, and the second optical waveguide cladding layer is made of a silicon medium material;
the first surface of the optical waveguide structure is positioned on the second optical waveguide cladding layer, and the first surface is provided with a redistribution circuit layer; the circuit structure comprises a redistribution circuit arranged on the redistribution circuit layer, and the redistribution circuit is electrically connected with the active reflection element;
the control wafer is arranged on the redistribution circuit layer and is electrically connected with the active reflection element through the redistribution circuit.
8. The active optical waveguide circuit board of claim 7,
the second optical waveguide cladding layer is provided with a groove which is communicated with the cavity;
the groove is provided with at least one groove through hole and a group of first connecting pads; a third conductive column is arranged in the at least one groove through hole; the at least one groove through hole is communicated with the cavity and the redistribution layer, and the group of first connection pads is electrically connected with the redistribution layer of the redistribution layer through the third conductive column in each groove through hole;
the redistribution layer comprises a first redistribution layer surface and a second redistribution layer surface which are opposite, and the second redistribution layer surface is deviated from the optical waveguide structure; a group of second connecting pads are arranged on the surface of the second redistribution circuit and electrically connected with the redistribution circuit;
the active reflection element is arranged in the groove communicated with the cavity and is electrically connected with the group of first connecting pads;
the control chip is arranged on the surface of the second redistribution circuit of the redistribution circuit layer, is electrically connected with the group of second connecting pads, and is electrically connected with the active reflection element through the group of second connecting pads, the redistribution circuit and the group of first connecting pads;
an external filling layer is disposed in a gap between the control chip and the redistribution layer, and the external filling layer surrounds the set of second connection pads.
9. The active optical waveguide circuit of claim 8, wherein the optical waveguide structure further comprises:
an internal filling layer disposed in the groove in the cavity, disposed in a gap between the active reflection element and an inner wall surface of the groove in the cavity, and surrounding the group of first connection pads.
10. The active optical waveguide circuit board of claim 7,
the optical waveguide core layer is a rectangular waveguide, and the optical waveguide cladding layer has four core surfaces surrounding and wrapping the optical waveguide core layer;
the second optical waveguide cladding layer covers one of the core surfaces of the optical waveguide core layer facing the redistribution layer, and the first optical waveguide cladding layer covers the other three core surfaces of the optical waveguide core layer.
11. The active optical waveguide circuit board of claim 7,
the refractive index of the first optical waveguide cladding layer is greater than the refractive index of the second optical waveguide cladding layer.
12. The active optical waveguide circuit of claim 1, wherein the active reflective element further comprises:
a first direction adjusting unit connected to the first reflector for adjusting the direction of the light beam reflected by the first reflector by changing the angle according to the first control signal;
a second reflector;
the second direction adjusting unit is connected with the second reflector;
wherein, the second direction adjusting unit and the first direction adjusting unit are arranged in an array;
the control chip generates a second control signal to the second direction adjustment unit of the active reflection element, and the second direction adjustment unit adjusts the angle reflected by the second reflector according to the second control signal;
when the light beam is emitted into the optical waveguide structure, the light beam is emitted into the second reflector in the cavity, and the direction of reflecting the light beam is determined according to the angle of the second reflector.
13. The active optical waveguide circuit board of any one of claims 1 to 12,
the first reflector comprises a convex lens surface and a reflecting cambered surface;
when the light beam enters the first reflector, the light beam enters from the convex lens surface, is converged to a light-gathering point on the reflecting cambered surface, and is reflected from the reflecting cambered surface to be emitted out of the convex lens surface;
when the light beam is reflected from the reflecting cambered surface and exits the convex lens surface, the light beam approaches a parallel light beam.
14. An active optical waveguide circuit board according to any one of claims 1 to 12, wherein the active reflective element further comprises:
a light-transmitting mask disposed on the active reflection element to cover the first reflector.
CN202222521681.9U 2022-09-23 2022-09-23 Active optical waveguide circuit board Active CN218003783U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222521681.9U CN218003783U (en) 2022-09-23 2022-09-23 Active optical waveguide circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222521681.9U CN218003783U (en) 2022-09-23 2022-09-23 Active optical waveguide circuit board

Publications (1)

Publication Number Publication Date
CN218003783U true CN218003783U (en) 2022-12-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
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