JPH08264748A - Optical waveguide integrated circuit device and its manufacture - Google Patents
Optical waveguide integrated circuit device and its manufactureInfo
- Publication number
- JPH08264748A JPH08264748A JP9310495A JP9310495A JPH08264748A JP H08264748 A JPH08264748 A JP H08264748A JP 9310495 A JP9310495 A JP 9310495A JP 9310495 A JP9310495 A JP 9310495A JP H08264748 A JPH08264748 A JP H08264748A
- Authority
- JP
- Japan
- Prior art keywords
- optical waveguide
- optical
- substrate
- integrated circuit
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光通信、光情報処理等
に利用される光導波路集積回路装置の構造および製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure and manufacturing method of an optical waveguide integrated circuit device used for optical communication, optical information processing and the like.
【０００２】[0002]
【従来の技術】光通信、光情報処理等に用いられる半導
体レーザ、受光素子、半導体レーザアンプ、光スイッチ
等の光デバイスは、一般に、光の入出力を光ファイバと
結合することにより光信号の送受を行う。このため、従
来の光デバイスのモジュール形態としては、光ファイバ
を光モジュールに固定したピグテイル型、又は、コネク
タを介して光ファイバを脱着可能としたレセプタクル型
が主流であった。2. Description of the Related Art Optical devices such as semiconductor lasers, light receiving elements, semiconductor laser amplifiers, and optical switches used for optical communication, optical information processing, etc., are generally used to couple optical input and output with an optical fiber. Send and receive. For this reason, as the module form of the conventional optical device, the pigtail type in which the optical fiber is fixed to the optical module or the receptacle type in which the optical fiber can be attached and detached via the connector has been mainly used.
【０００３】上記モジュール形態とは別に、ハイブリッ
ド光集積デバイス（光導波路集積デバイス、以下、光集
積モジュールともいう）が提案されている。光集積モジ
ュールでは、光導波路を含む平面光導波回路（ＰＬＣ）
と光機能素子とを共通のＳi基板上に形成し、光機能素
子相互間又は光機能素子と外部の光ファイバとの間の光
信号の送受をこのＰＬＣにより行なう。このような光集
積モジュールを採用することにより、単体デバイスを多
数配置する構成に比してデバイスの機能が大きく向上す
る。In addition to the above module form, a hybrid optical integrated device (optical waveguide integrated device, hereinafter also referred to as an optical integrated module) has been proposed. In an integrated optical module, a planar optical waveguide circuit (PLC) including an optical waveguide
And the optical functional element are formed on a common Si substrate, and the PLC transmits and receives optical signals between the optical functional elements or between the optical functional element and an external optical fiber. By adopting such an optical integrated module, the function of the device is significantly improved as compared with the configuration in which a large number of single devices are arranged.
【０００４】光集積モジュールは、従来、主に光スイッ
チ、光分岐カプラとして開発されており、光導波路は、
石英をベースにした石英系と有機高分子材料をベースに
した有機系とがある。石英をベースにした例では、図１
０に示すように、まずクラッド層４１及びコア層４２を
含む光導波路を形成し、次いで半導体レーザなどの光デ
バイス４３を光導波路４１、４２に精度よく結合するよ
うに実装する方法で作られる。光ファイバ４４との結合
は、図示の如く導波路端にファイバガイド溝４５を設
け、或いは、コネクタ加工により行なう方法がある。石
英ＰＬＣを用いた光集積モジュールでは、石英の成形温
度が１０００℃と高いため、このように、導波路４１、
４２を形成した後に光機能素子４３を設置する。The integrated optical module has been mainly developed as an optical switch or an optical branching coupler, and the optical waveguide is
There are quartz based on quartz and organic based on organic polymer materials. For a quartz-based example, see Figure 1.
As shown in FIG. 0, an optical waveguide including a clad layer 41 and a core layer 42 is first formed, and then an optical device 43 such as a semiconductor laser is mounted so as to be accurately coupled to the optical waveguides 41 and 42. The coupling with the optical fiber 44 can be performed by providing a fiber guide groove 45 at the end of the waveguide as shown in the figure or by processing the connector. In the optical integrated module using the quartz PLC, since the molding temperature of quartz is as high as 1000 ° C., the waveguide 41,
After forming 42, the optical function element 43 is installed.
【０００５】有機系導波路を用いた光集積モジュール
は、例えば、特開昭６０−４２５６号公報に示されてい
る。この例では、図１１（ａ）及び（ｂ）に示すよう
に、まず、基板５１上に半導体レーザやフォトディテク
タ等の光デバイス５２を実装した後に有機高分子材料５
３を塗布し、次いで、マスク５４を通して紫外線５５を
選択的に照射して有機高分子材料５３を硬化させること
で、得られる光導波路５６を光デバイス５２に目合わせ
する。有機系光導波路を用いる光集積モジュールは、大
面積のウエハ上にフォトリソグラフィにより一度に複数
のデバイスが形成できるため、先の例に比して低コスト
で光デバイスを製造できる利点がある。An optical integrated module using an organic waveguide is disclosed in, for example, Japanese Patent Laid-Open No. 60-4256. In this example, as shown in FIGS. 11A and 11B, first, an optical device 52 such as a semiconductor laser or a photodetector is mounted on a substrate 51, and then the organic polymer material 5 is used.
3 is applied, and then ultraviolet rays 55 are selectively irradiated through the mask 54 to cure the organic polymer material 53, thereby aligning the obtained optical waveguide 56 with the optical device 52. The optical integrated module using the organic optical waveguide has an advantage that a plurality of devices can be formed at once by photolithography on a large-area wafer, so that the optical device can be manufactured at a lower cost than the above example.
【０００６】また、有機系導波路を採用する光集積モジ
ュールでは、光機能素子を予め光導波路と結合し、その
後に光導波路と光ファイバとを結合する構成が採用でき
るので、基板上に光機能素子及び光部品を搭載する際に
光ファイバが邪魔にならず、アセンブリの自動化が容易
という利点もある。更に、光機能素子を基板上に搭載し
たあとで有機物を塗布、加工できる点で位置合わせや加
工自体が容易という利点もある。Further, in the optical integrated module adopting the organic waveguide, since the optical functional element can be coupled with the optical waveguide in advance and then the optical waveguide and the optical fiber can be coupled, the optical function can be achieved on the substrate. There is also an advantage that the optical fiber does not get in the way when the element and the optical component are mounted, and the automation of the assembly is easy. Further, there is also an advantage that the alignment and the processing itself are easy in that the organic substance can be applied and processed after the optical functional element is mounted on the substrate.
【０００７】[0007]
【発明が解決しようとする課題】上記石英系の光導波路
集積デバイスでは、石英の厚さの制御が困難であり、ま
た、一般に光機能素子と光導波路との結合に１μｍ程度
の寸法精度が要求されるが、このような精度で光機能素
子を配置固定することは技術的に困難という問題があ
る。更に、石英の穴開けに時間がかかる等の問題もあ
る。In the above silica-based optical waveguide integrated device, it is difficult to control the thickness of quartz, and in general, dimensional accuracy of about 1 μm is required for coupling the optical functional element and the optical waveguide. However, it is technically difficult to arrange and fix the optical functional element with such accuracy. Further, there is a problem that it takes time to open a hole in quartz.
【０００８】一方、有機系の光導波路集積デバイスで
は、有機系材料は温度により伸縮するため、光導波路の
寸法精度が高く得られないという問題がある。また、有
機系材料は、スピンコート時に基板縁部で盛り上がる、
特に基板の切断時等に基板から剥がれやすい、更には、
厚膜に形成することが困難という問題もある。On the other hand, in the organic optical waveguide integrated device, there is a problem that the dimensional accuracy of the optical waveguide cannot be obtained because the organic material expands and contracts with temperature. In addition, the organic material rises at the edge of the substrate during spin coating,
Especially when the board is cut, it is easy to peel off from the board.
There is also a problem that it is difficult to form a thick film.
【０００９】本発明は、特に有機系光導波路を採用する
光導波路集積回路装置について、有機系材料の採用に起
因する上記問題の解決を図ることで、温度等の影響を受
け難く、信頼性及び寸法精度が高い低価格の光導波路集
積回路装置及びその製造方法を提供することを目的とす
る。The present invention solves the above-mentioned problems caused by the use of organic materials, particularly in an optical waveguide integrated circuit device which employs an organic optical waveguide, so that it is less susceptible to temperature and the like, and reliability and An object of the present invention is to provide an inexpensive optical waveguide integrated circuit device having high dimensional accuracy and a method for manufacturing the same.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するた
め、本発明の光導波路集積回路装置は、少なくとも一つ
の光機能素子と、該光機能素子と光学的に結合される光
導波路とを共通の基板上に備える光導波路集積回路装置
において、前記光導波路を透光性有機材料から構成し、
該光導波路のクラッド層とコア層とを受容する溝を基板
の主面に形成したことを特徴とする。In order to achieve the above object, an optical waveguide integrated circuit device of the present invention has at least one optical functional element and an optical waveguide which is optically coupled to the optical functional element in common. In the optical waveguide integrated circuit device provided on the substrate of, the optical waveguide is composed of a translucent organic material,
A groove for receiving the clad layer and the core layer of the optical waveguide is formed on the main surface of the substrate.
【００１１】ここで、本発明の光導波路集積回路装置に
おける光機能素子については、特に限定はなく、例え
ば、半導体レーザ、半導体受光素子（フォトディテク
タ）、光スイッチ、光分岐カプラ等、いかなる光機能素
子（光デバイス）でもよい。また、透光性有機材料に
は、従来から光導波路の材料として用いられている、い
かなる有機系材料を採用してもよい。例えば、フッ化物
ポリイミド、ポリイミド、ポリメチルメタクリレート、
エポキシ樹脂及び紫外線硬化性樹脂等が好適に採用され
る。また、コア層を構成する材料についても、特に限定
はないが、クラッド層を構成する材料との関連で、例え
ば同種の材料で屈折率が異なる材料として、選定され
る。The optical functional element in the optical waveguide integrated circuit device of the present invention is not particularly limited, and any optical functional element such as a semiconductor laser, a semiconductor light receiving element (photodetector), an optical switch, an optical branching coupler, etc. (Optical device). As the translucent organic material, any organic material conventionally used as a material for an optical waveguide may be adopted. For example, fluoride polyimide, polyimide, polymethylmethacrylate,
Epoxy resin and UV curable resin are preferably adopted. The material forming the core layer is not particularly limited, but is selected as a material of the same kind but having a different refractive index in relation to the material forming the clad layer.
【００１２】基板の主面とは、光機能素子を含む光集積
モジュールの機能素子及び導波路が形成される側の基板
の一の面をいい、各機能素子及び導波路は、主面の面上
に或いは主面に形成された溝部又は凹部に配置される。The main surface of the substrate is one surface of the substrate on the side where the functional element and the waveguide of the optical integrated module including the optical functional element are formed, and each functional element and the waveguide is the surface of the main surface. It is arranged in a groove or a recess formed on or on the main surface.
【００１３】クラッド層は、コア層を溝の内部に埋め込
むことで足りるが、これに加えて溝に隣接する基板主面
の一部又は主面の全面に形成してもよく、この場合、溝
の側壁から有機系材料が剥がれるおそれが小さくなる。The clad layer may be formed by embedding the core layer in the groove, but in addition to this, it may be formed on a part of the main surface of the substrate adjacent to the groove or on the entire main surface. The risk that the organic material will peel off from the side wall of is reduced.
【００１４】光機能素子を含む機能素子を、クラッド層
により、又はクラッド層を構成する透光性有機材料によ
り覆うことも好ましく、この場合、光導波路を受容する
溝内に各機能素子を配置し、或いは機能素子を受容する
凹部を別に形成することも本発明の好ましい態様であ
る。かかる構成を採用すると、透光性有機材料は、光機
能素子を含む各機能素子のパッシベーション膜として機
能し、例えば各素子を水分から保護すると共に、特に半
田等で基板に固着される光機能素子を振動等から保護す
る。また、光機能素子と光導波路との直接的な結合も可
能となり、これらの間の光結合効率が向上すると共に信
頼性の高い結合が得られる。なお、本明細書の記述で
は、基板の主面に形成した、光導波路を受容する縦長の
低部を溝又は縦溝と称し、主として機能素子を受容する
低部を凹部と称する。It is also preferable that the functional element including the optical functional element is covered with the cladding layer or with the translucent organic material forming the cladding layer. In this case, each functional element is disposed in the groove for receiving the optical waveguide. Alternatively, it is also a preferred embodiment of the present invention to form a separate recess for receiving the functional element. When such a configuration is adopted, the translucent organic material functions as a passivation film for each functional element including the optical functional element, protects each element from moisture, and is an optical functional element that is fixed to the substrate with solder or the like. Protects against vibration. In addition, direct coupling between the optical functional element and the optical waveguide is also possible, the optical coupling efficiency between them can be improved, and highly reliable coupling can be obtained. In the description of the present specification, the vertically elongated lower portion formed on the main surface of the substrate for receiving the optical waveguide is referred to as a groove or a vertical groove, and the lower portion mainly receiving the functional element is referred to as a recess.
【００１５】溝の断面を逆メサ形状に形成することも本
発明の好ましい態様であり、この場合、特に基板の切断
時等に、透光性有機材料が溝の側壁から剥がれることを
容易に防止できる。It is also a preferred embodiment of the present invention to form the cross section of the groove in an inverted mesa shape. In this case, it is possible to easily prevent the translucent organic material from peeling off from the side wall of the groove, especially when the substrate is cut. it can.
【００１６】多数の溝を並列に形成し、これらの夫々に
対応するコア層を１つづつ埋め込む構成を採用すれば、
各コア層間の間隔を正確に維持できる。また、これに代
えて、１つの溝内に２以上のコア層を埋め込むこともで
き、この場合、光導波路の配置効率が向上する。If a large number of grooves are formed in parallel and one core layer corresponding to each of these grooves is embedded,
The spacing between the core layers can be maintained accurately. Alternatively, two or more core layers may be embedded in one groove, and in this case, the arrangement efficiency of the optical waveguide is improved.
【００１７】基板を、第１の基板と該第１の基板上に固
着される第２の基板とから構成し、第２の基板を選択的
に除去することにより、溝を形成することも好ましい態
様である。この場合、エッチングが容易な第２の基板材
料を選定することにより、溝の形成を容易にする。It is also preferable that the substrate is composed of a first substrate and a second substrate fixed on the first substrate, and the groove is formed by selectively removing the second substrate. It is a mode. In this case, the formation of the groove is facilitated by selecting the second substrate material that is easily etched.
【００１８】光機能素子を半導体レーザとして構成し、
半導体レーザ側のコア層の端面においてコア層の幅をレ
ーザ光のモードフィールドの径に実質的に一致させ、且
つ、半導体レーザと逆側のコア層の端面において、コア
層の幅を光ファイバのモードフィールドの径に実質的に
一致させることも好ましい態様である。この場合、半導
体レーザと光ファイバとの光結合効率を更に向上させる
ことが出来る。The optical functional element is configured as a semiconductor laser,
At the end surface of the core layer on the semiconductor laser side, the width of the core layer is substantially matched to the diameter of the mode field of the laser light, and at the end surface of the core layer on the side opposite to the semiconductor laser, the width of the core layer is It is also a preferred embodiment to make the diameter of the mode field substantially match. In this case, the optical coupling efficiency between the semiconductor laser and the optical fiber can be further improved.
【００１９】光機能素子を半導体レーザとして構成し、
半導体レーザと逆側の光導波路の端面に、光導波路の出
力光を基板の主面と略直交する方向に反射する傾斜鏡面
を形成し、この傾斜鏡面からの光を受光し、光出力をモ
ニタする受光素子を備えることも本発明の好ましい態様
である。この場合、基板の同じ主面部分に半導体レーザ
及び受光素子を配置できるので、特に光集積モジュール
の集積度が向上し、また、光機能素子間の光結合効率が
向上する。The optical functional element is configured as a semiconductor laser,
An inclined mirror surface that reflects the output light of the optical waveguide in a direction substantially orthogonal to the main surface of the substrate is formed on the end surface of the optical waveguide on the side opposite to the semiconductor laser, and the light output from this inclined mirror surface is received and the optical output is monitored. It is also a preferable aspect of the present invention to include a light receiving element that does. In this case, since the semiconductor laser and the light receiving element can be arranged on the same main surface portion of the substrate, the integration degree of the optical integrated module is improved, and the optical coupling efficiency between the optical functional elements is improved.
【００２０】本発明の光導波路集積回路装置の製造方法
は、上記本発明の光導波路集積回路装置を製造する方法
であって、前記基板の主面に溝を形成する第１ステップ
と、該基板上に光機能素子を固定する第２ステップと、
該第２ステップに後続し、前記溝内に前記光導波路を形
成する第３ステップとを有することを特徴とする。The method of manufacturing an optical waveguide integrated circuit device of the present invention is the method of manufacturing the optical waveguide integrated circuit device of the present invention, which comprises a first step of forming a groove on the main surface of the substrate, and the substrate. The second step of fixing the optical functional element on top,
After the second step, there is a third step of forming the optical waveguide in the groove.
【００２１】[0021]
【作用】本発明の光導波路集積回路装置では、コア層が
溝内に埋め込まれているので、温度変化による透光性有
機材料の伸縮があってもコア層の位置が変化するおそれ
が小さく、温度による影響を軽減すると共に、透光性有
機材料の基板からの剥がれのおそれを除いている。In the optical waveguide integrated circuit device of the present invention, since the core layer is embedded in the groove, the position of the core layer is unlikely to change even if the translucent organic material expands or contracts due to temperature change. The influence of temperature is reduced, and the possibility that the translucent organic material is peeled off from the substrate is eliminated.
【００２２】また、本発明の光集積回路装置の製造方法
によると、上記作用を有する光導波路集積回路装置を製
造できると共に、光機能素子と光導波路との間で光結合
効率が高い光導波路集積回路装置を容易に製造できる。Further, according to the method of manufacturing an optical integrated circuit device of the present invention, an optical waveguide integrated circuit device having the above-described action can be manufactured, and an optical waveguide integrated circuit having a high optical coupling efficiency between the optical functional element and the optical waveguide. The circuit device can be easily manufactured.
【００２３】[0023]
【実施例】図１は、本発明の一実施例の光導波路集積回
路装置を成す光集積モジュールの構造を示す斜視図であ
る。同図において、例えばＳi基板から成る基板１１に
は、長手方向に延びる溝（縦溝）１２と、この縦溝１２
と直交する方向に傾斜側壁を有し縦溝１２よりも幅広で
且つ深い凹部１６が形成されている。縦溝１２及び凹部
１６の内部には、透光性有機材料が塗布・充填されてお
り、縦溝１２内の透光性有機材料は、クラッド層１３及
びコア層１４から成る有機系光導波路を構成し、また、
凹部１６内の透光性有機材料はその大部分が充填層を構
成している。FIG. 1 is a perspective view showing the structure of an optical integrated module which constitutes an optical waveguide integrated circuit device according to an embodiment of the present invention. In the figure, a substrate 11 made of, for example, a Si substrate, has a groove (vertical groove) 12 extending in the longitudinal direction, and the vertical groove 12
A concave portion 16 having an inclined side wall in a direction orthogonal to and wider and deeper than the vertical groove 12 is formed. A translucent organic material is applied and filled inside the vertical groove 12 and the concave portion 16, and the translucent organic material in the vertical groove 12 forms an organic optical waveguide including a clad layer 13 and a core layer 14. Configure and also
Most of the translucent organic material in the recess 16 constitutes a filling layer.
【００２４】凹部１６内には光機能素子を構成する半導
体レーザ１５が収容されており、半導体レーザ１５は、
透光性有機材料により凹部１６内に埋め込まれている。
半導体レーザ１５は、例えば半田材料により凹部１６の
底面に固定されている。半導体レーザ１５と光導波路の
コア層１４との接続部を成すコア層１４の端面１４Ａの
幅は、レーザ光のモードフィールドの径に合わせて約２
μmとしてあり、また、コア層１４の半導体レーザ１５
側と逆側の端面１４Ｂにおけるコア層１４の幅は、この
光集積モジュールに接続される光ファイバのモードフィ
ールドの径に合わせて約１０μmとしてある。かかる構
造により、この光集積モジュールは、半導体レーザ１５
の出力光を結合効率よく光ファイバに伝達することが出
来る。A semiconductor laser 15 which constitutes an optical functional element is housed in the recess 16, and the semiconductor laser 15 is
It is embedded in the recess 16 with a translucent organic material.
The semiconductor laser 15 is fixed to the bottom surface of the recess 16 with, for example, a solder material. The width of the end surface 14A of the core layer 14 forming the connecting portion between the semiconductor laser 15 and the core layer 14 of the optical waveguide is about 2 according to the diameter of the mode field of the laser light.
μm, and the semiconductor laser 15 of the core layer 14
The width of the core layer 14 at the end face 14B on the side opposite to the side is about 10 μm in accordance with the diameter of the mode field of the optical fiber connected to this optical integrated module. With such a structure, the optical integrated module has the semiconductor laser 15
The output light of can be transmitted to the optical fiber with good coupling efficiency.
【００２５】透光性有機材料としては、例えばフッ化物
ポリイミドが選定される。クラッド層１３のフッ化物ポ
リイミドの屈折率ｎ1は１．５２、コア層１４のフッ化
物ポリイミドの屈折率ｎ2は１．５２５であり、従っ
て、双方の層の屈折率の差の比率Δｎ（＝１００×（ｎ
2−ｎ1）／ｎ2）は約０．３％である。As the translucent organic material, for example, fluoride polyimide is selected. The refractive index n 1 of the fluoride polyimide of the clad layer 13 is 1.52, and the refractive index n 2 of the fluoride polyimide of the core layer 14 is 1.525. Therefore, the ratio Δn (the difference between the refractive indices of both layers is Δn ( = 100 × (n
2- n 1 ) / n 2 ) is about 0.3%.
【００２６】図２（ａ）〜（ｈ）は、上記光集積モジュ
ールの製造工程を順次に示す、縦溝中心を通る平面での
断面図である。まず、ダイシング加工によりウエハから
形成したＳi基板１１を用意し、その主面にエッチング
又は機械加工により、縦溝１２及び凹部１６を形成する
（同図（ａ））。次いで、凹部１６の底部に半導体レー
ザ１５を半田によりボンディングする。ここで、半導体
レーザ１５の中心を縦溝１２の中心にほぼ一致させる。
引き続き、高反射膜による半導体レーザ１５の端面コー
ティングを行なう（同図（ｂ））。この時点で、半導体
レーザ１５の特性評価、スクリーニング評価等を一括し
て行なう。2 (a) to 2 (h) are cross-sectional views in a plane passing through the center of the vertical groove, which sequentially shows the manufacturing process of the optical integrated module. First, an Si substrate 11 formed from a wafer by dicing is prepared, and vertical grooves 12 and recesses 16 are formed on the main surface of the Si substrate 11 by etching or machining (FIG. 8A). Next, the semiconductor laser 15 is bonded to the bottom of the recess 16 by soldering. Here, the center of the semiconductor laser 15 is substantially aligned with the center of the vertical groove 12.
Subsequently, the end face coating of the semiconductor laser 15 is performed with a high reflection film ((b) of the same figure). At this point, characteristic evaluation, screening evaluation, etc. of the semiconductor laser 15 are collectively performed.
【００２７】次いで、透光性有機材料を成すフッ化物ポ
リイミドにより光導波路を形成する。まず、屈折率ｎ1
が１．５２のフッ化物ポリイミドを、縦溝１３及び凹部
１６を含む溝中にスピンコーティングにより塗布する。
引き続き、フッ化物ポリイミドを熱硬化させて、縦溝内
にクラッド層１３を、凹部１６内に充填層１３を夫々得
る。なお、このとき、フッ化物ポリイミドは溝内のみで
なく、基板表面の全体又はその一部に所定厚みとなるよ
うに塗布してもよい。次いで、ＳiＯ2膜又は金属膜によ
り、縦溝１２の幅の内側に位置するストライプ状のマス
クを形成する。ストライプ状マスクは、コア層１４を収
容する細溝（コア溝）をクラッド層１３内に形成するた
めのもので、フォトリソグラフィにより半導体レーザの
発光部に目合わせすることで、例えば１μmオーダーの
精度で容易に形成できる。Next, an optical waveguide is formed from fluoride polyimide which is a translucent organic material. First, the refractive index n 1
Is applied to the groove including the vertical groove 13 and the concave portion 16 by spin coating.
Subsequently, the fluoride polyimide is thermally cured to obtain the clad layer 13 in the vertical groove and the filling layer 13 in the concave portion 16, respectively. At this time, the fluoride polyimide may be applied not only in the groove but also to the whole or a part of the substrate surface so as to have a predetermined thickness. Next, a stripe-shaped mask located inside the width of the vertical groove 12 is formed from the SiO 2 film or the metal film. The stripe-shaped mask is for forming a fine groove (core groove) for accommodating the core layer 14 in the clad layer 13, and by aligning with the light emitting portion of the semiconductor laser by photolithography, for example, accuracy of the order of 1 μm. Can be easily formed.
【００２８】引き続き、酸素イオンを利用したイオンビ
ームエッチング等により、クラッド層１３をエッチング
して、半導体レーザ１５の活性層の下方に底部を有する
コア溝を形成する。次に、屈折率ｎ2が１．５２５のフ
ッ化物ポリイミドをコア溝内に塗布し、硬化させてコア
層を形成する（図２（ｄ））。次いで、再度、酸素イオ
ンを利用したイオンビームエッチングを行なって、コア
層上面が半導体レーザの活性層の僅かに上のレベルとな
るまで、コア層１４をエッチングしてコア厚みを決定す
る（同図（ｅ））。コア厚みは、光ファイバのモードフ
ィールドの径に合わせることで、コア層１４と、このモ
ジュールに接続される光ファイバとの光結合効率を高め
ることが出来る。ここで、一例として、コア層の厚みを
シングルモードファイバのモードフィールドの径とほぼ
同じ８〜１０μmとする。Subsequently, the clad layer 13 is etched by ion beam etching or the like using oxygen ions to form a core groove having a bottom portion below the active layer of the semiconductor laser 15. Next, fluoride polyimide having a refractive index n 2 of 1.525 is applied in the core groove and cured to form a core layer (FIG. 2D). Then, ion beam etching using oxygen ions is performed again, and the core layer 14 is etched to determine the core thickness until the upper surface of the core layer reaches a level slightly above the active layer of the semiconductor laser (see FIG. (E)). By adjusting the core thickness to the diameter of the mode field of the optical fiber, the optical coupling efficiency between the core layer 14 and the optical fiber connected to this module can be increased. Here, as an example, the thickness of the core layer is set to 8 to 10 μm, which is almost the same as the diameter of the mode field of the single mode fiber.
【００２９】ストライプ状マスクを除去した後に、屈折
率ｎ3が１．５２（＝ｎ1）のフッ化物ポリイミドをコア
層１４上に塗布する。次いで、これを熱硬化させた後に
エッチバックを行なってクラッド層１３の厚みを調整
し、光導波路を完成させる（図２（ｆ））。引き続き、
窓形成用のフォトマスクを形成し、酸素イオンを利用し
た選択的イオンビームエッチングを行なう。これによ
り、半導体レーザの電極表面を露出させるパターン窓が
得られる。スパッタリング等により、窓内及び有機系材
料の表面に金属パッド及び配線パターン１７を形成し、
半導体レーザ１５の電極を引き出す（同図（ｇ））。ウ
エハを個々のデバイス毎に分離し、光導波路端面を鏡面
に研磨することより、図１の光集積モジュールが形成さ
れる。After removing the striped mask, fluoride polyimide having a refractive index n 3 of 1.52 (= n 1 ) is applied on the core layer 14. Next, this is thermally cured and then etched back to adjust the thickness of the cladding layer 13 to complete the optical waveguide (FIG. 2 (f)). Continued
A photomask for forming a window is formed, and selective ion beam etching using oxygen ions is performed. As a result, a pattern window exposing the electrode surface of the semiconductor laser can be obtained. Form the metal pad and the wiring pattern 17 in the window and on the surface of the organic material by sputtering or the like,
The electrode of the semiconductor laser 15 is pulled out ((g) in the same figure). The optical integrated module of FIG. 1 is formed by separating the wafer into individual devices and polishing the end faces of the optical waveguide into mirror surfaces.
【００３０】図２の光モジュールでは、ケース（上蓋）
１９により、最終的に半導体レーザ１５を含む基板の主
面が密封される様子が示されている。ケース１９の上部
及び基板１１の裏面には夫々、光ファイバを接続するた
めのコネクタ２０が形成される。In the optical module of FIG. 2, the case (upper lid)
19 shows that the main surface of the substrate including the semiconductor laser 15 is finally sealed. A connector 20 for connecting an optical fiber is formed on each of the upper portion of the case 19 and the back surface of the substrate 11.
【００３１】図３〜図６は夫々、上記第１の実施例の光
導波路集積デバイスの変形例を示すもので、光導波路の
種々の構造を断面図又は斜視図として示している。各図
において、各要素に付した参照符号は、図１に示した同
様な要素の参照符号と同じにしてあり、これにより、同
様な要素の説明を省略する。3 to 6 each show a modification of the optical waveguide integrated device of the first embodiment, and show various structures of the optical waveguide as a sectional view or a perspective view. In each drawing, the reference numerals assigned to the respective elements are the same as the reference numerals of the similar elements shown in FIG. 1, and thus the description of the similar elements will be omitted.
【００３２】図３は、光導波路を形成するための縦溝１
２の断面を逆メサ形状に形成した例である。即ち、縦溝
１２の底面幅を縦溝上部の幅よりも大きく形成してあ
る。かかる構造を採用することにより、クラッド層１３
を構成する透光性有機材料が、縦溝１２の側壁上部にお
いて壁面から剥がれることを防止している。FIG. 3 shows a vertical groove 1 for forming an optical waveguide.
2 is an example in which the cross section of 2 is formed in an inverted mesa shape. That is, the bottom width of the vertical groove 12 is formed larger than the width of the upper portion of the vertical groove. By adopting such a structure, the cladding layer 13
The translucent organic material constituting the above is prevented from peeling off from the wall surface at the upper portion of the side wall of the vertical groove 12.
【００３３】図４は、クラッド層１３を構成する透光性
有機材料を、縦溝１２内のみならず、基板１１の主面に
まで所定厚みで形成した例である。このような構成を採
用することで、図３の例と同様に、透光性有機材料が縦
溝１２の側壁から剥がれることを防止する。FIG. 4 shows an example in which the translucent organic material forming the cladding layer 13 is formed not only in the vertical grooves 12 but also on the main surface of the substrate 11 with a predetermined thickness. By adopting such a configuration, it is possible to prevent the translucent organic material from being peeled off from the side wall of the vertical groove 12, as in the example of FIG.
【００３４】図５は、１つの溝中に複数（この場合２
つ）のコア層を形成した例である。これにより、光集積
モジュール内のスペースを確保する。なお、あまり多数
のコア層を１つの溝中に並べると、有機材料の熱伸縮に
より、コア層相互の間隔が精度よく保てないため、光機
能素子及び光ファイバとの取合い部については注意が必
要である。また、この例では、２枚の基板１１Ａ、１１
Ｂを張り合わせた構造を採用する。この場合、上側基板
１１Ｂは、エッチングが容易な材料から形成し、この上
側基板１１Ｂのエッチングによって縦溝１２を形成し、
エッチング加工に要するコストを低減する。FIG. 5 shows a plurality of grooves in one groove (in this case, 2
2) is an example in which a core layer is formed. This secures a space in the optical integrated module. Note that if too many core layers are arranged in one groove, the thermal expansion and contraction of the organic material makes it impossible to keep the distance between the core layers accurately, so care should be taken with regard to the connection with the optical functional element and the optical fiber. is necessary. Further, in this example, the two substrates 11A and 11A are
Adopt a structure in which B is attached. In this case, the upper substrate 11B is formed of a material that can be easily etched, and the vertical groove 12 is formed by etching the upper substrate 11B.
The cost required for etching processing is reduced.
【００３５】図６は、図４の更に変形実施例であり、多
数の各縦溝１２内に夫々１つのコア層１４を収容すると
共に、多数の縦溝に一括してクラッド層１３を形成して
いる。クラッド層１３は基板１１主面のほぼ全面に形成
してあり、基板１１の縁部にリブ１７を形成して、クラ
ッド層１３の所定厚みの塗布を容易にしている。図７
は、図６の実施例と比較するための比較例を示してい
る。この比較例では、基板１１の主面に溝を形成するこ
となく、主面の全面に透光性有機材料からなる光導波路
を形成する。この場合、単に多数のコア層１４を並列に
配置して全体をクラッド層１３で覆う構成としている。
しかし、このような構成を採用すると、温度変化に起因
する有機材料の伸縮により、各コア層１４間のピッチｄ
が変化するため、配置上で必要な寸法精度が得られず、
光機能素子や光ファイバとの結合に支障が生ずる場合が
ある。しかし、図６の実施例によれば、コア層１４を縦
溝１２内に配置したことにより、温度変化に起因してコ
ア層の間隔に変化が生ずることはなく、必要な寸法精度
が容易に得られる。FIG. 6 is a further modified example of FIG. 4, in which one core layer 14 is accommodated in each of the plurality of vertical grooves 12 and the cladding layer 13 is collectively formed in the plurality of vertical grooves. ing. The clad layer 13 is formed on almost the entire main surface of the substrate 11, and ribs 17 are formed on the edges of the substrate 11 to facilitate application of the clad layer 13 to a predetermined thickness. Figure 7
Shows a comparative example for comparison with the embodiment of FIG. In this comparative example, an optical waveguide made of a translucent organic material is formed on the entire main surface without forming a groove on the main surface of the substrate 11. In this case, a large number of core layers 14 are simply arranged in parallel and the whole is covered with the cladding layer 13.
However, when such a configuration is adopted, the pitch d between the core layers 14 is increased or decreased due to the expansion and contraction of the organic material due to the temperature change.
Change, the dimensional accuracy required for placement cannot be obtained,
The connection with the optical functional element and the optical fiber may be hindered. However, according to the embodiment of FIG. 6, by disposing the core layer 14 in the vertical groove 12, the space between the core layers does not change due to the temperature change, and the required dimensional accuracy is easily achieved. can get.
【００３６】図８は、本発明の第２の実施例の光導波路
集積回路装置を成す光導波路集積モジュールの断面を示
している。本実施例は、半導体レーザ２５、光導波路２
３、２４及びフォトディテクタ２８を含む光集積モジュ
ールの全体を基板の１つの主面側に形成している。基板
２１の主面に形成された縦溝２２内にはクラッド層２３
及びコア層２４を有する光導波路が形成され、また凹部
２６内には半導体レーザ２５が固定されている。半導体
レーザ２５と逆側の光導波路の端面には基板２１の主面
と約４５度の角度を成す傾斜鏡面２７が形成されてい
る。傾斜鏡面２７は、基板２１をエッチングして得られ
た溝の傾斜側壁に高反射膜を塗布して得られる。FIG. 8 shows a cross section of an optical waveguide integrated module which constitutes the optical waveguide integrated circuit device of the second embodiment of the present invention. In this embodiment, the semiconductor laser 25 and the optical waveguide 2 are used.
The entire optical integrated module including 3, 24 and the photodetector 28 is formed on one main surface side of the substrate. In the vertical groove 22 formed in the main surface of the substrate 21, the clad layer 23 is formed.
An optical waveguide having a core layer 24 is formed, and a semiconductor laser 25 is fixed in the recess 26. An inclined mirror surface 27 forming an angle of about 45 degrees with the main surface of the substrate 21 is formed on the end surface of the optical waveguide opposite to the semiconductor laser 25. The inclined mirror surface 27 is obtained by applying a high-reflection film on the inclined side wall of the groove obtained by etching the substrate 21.
【００３７】クラッド層２３を構成する透光性有機樹脂
により溝全体が充填され、溝部分と基板の露出表面部分
を成す主面とが平坦に形成されている。傾斜鏡面２７の
上部には、光導波路２３、２４及び傾斜鏡面２７から送
られるレーザ光の照射位置に受光部を有する裏面入射型
フォトディテクタ２８が配置されており、半導体レーザ
２５からのレーザ光は、このフォトディテクタ２８によ
り検出される。図示されていないが、フォトディテクタ
２８を含む光集積モジュール全体を覆って、更に透光性
有機樹脂が塗布されて、モジュールパッケージが形成さ
れる。The entire groove is filled with the translucent organic resin forming the cladding layer 23, and the groove portion and the main surface forming the exposed surface portion of the substrate are formed flat. On the upper part of the inclined mirror surface 27, a back illuminated photodetector 28 having a light receiving portion is arranged at the irradiation position of the laser light sent from the optical waveguides 23, 24 and the inclined mirror surface 27, and the laser light from the semiconductor laser 25 is It is detected by this photo detector 28. Although not shown, a light transmissive organic resin is further applied to cover the entire optical integrated module including the photo detector 28 to form a module package.
【００３８】第２の実施例においても、半導体レーザ２
５を凹部の底面に固定した後に、フォトリソグラフィ技
術により有機物導波路２３、２４を形成できることか
ら、光軸合わせの精度が高い光集積モジュールを製造で
きる。また、レーザ光をほぼ基板主面と直交方向に向け
て反射する傾斜鏡面２７を設けた構成により、レーザ光
を受光する裏面入射型フォトディテクタ２８を基板の主
面に直接配置できるので、モジュール全体の小型化が可
能である。更に、フォトディテクタ２８を含めた全体を
有機系材料で覆うことにより、湿気等からモジュール全
体を保護してその信頼性を高めることが出来る。この場
合、モジュールの封止を別に行なう必要がなく、封止に
必要な工数が低減できる。また、光機能素子を含む機能
素子が有機樹脂で封止される結果、これらの振動に対す
る耐性も向上する。Also in the second embodiment, the semiconductor laser 2
Since the organic waveguides 23 and 24 can be formed by the photolithography technique after fixing 5 to the bottom surface of the concave portion, an optical integrated module with high optical axis alignment accuracy can be manufactured. Further, since the inclined mirror surface 27 that reflects the laser light in a direction substantially orthogonal to the main surface of the substrate is provided, the back-illuminated photodetector 28 that receives the laser light can be arranged directly on the main surface of the substrate. Can be miniaturized. Further, by covering the whole including the photodetector 28 with the organic material, it is possible to protect the entire module from moisture and improve the reliability thereof. In this case, it is not necessary to separately seal the module, and the number of steps required for sealing can be reduced. Further, as a result of functional elements including the optical functional element being sealed with the organic resin, resistance to these vibrations is also improved.
【００３９】図９は、本発明の光導波路集積回路装置
を、高い集積度で実現する際の概念図である。同図にお
いて、シリコンウエハ３１上には多数のモジュールチッ
プ３２が形成されており、各モジュールチップ３２に
は、多数の光導波路３３、多数の光デバイス３４、電子
素子集積回路（ＩＣ）３５及びモジュール内のボンディ
ング配線３６が順次に配列される。このように、本発明
にかかる光集積デバイスを同一ウエハ上に多数形成する
ことで、信頼性が高く低価格の光集積モジュールが大量
生産できる。FIG. 9 is a conceptual diagram for realizing the optical waveguide integrated circuit device of the present invention with a high degree of integration. In the figure, many module chips 32 are formed on a silicon wafer 31, and each module chip 32 has many optical waveguides 33, many optical devices 34, electronic element integrated circuits (ICs) 35, and modules. The inner bonding wires 36 are sequentially arranged. As described above, by forming a large number of optical integrated devices according to the present invention on the same wafer, it is possible to mass-produce an optical integrated module having high reliability and low cost.
【００４０】以上、本発明をその好適な実施例及び概念
等に基づいて説明したが、本発明は、上記実施例等の構
成にのみ限定されるものではなく、上記各実施例等の構
成から種々の修正及び変更を加えた光導波路集積デバイ
ス及びその製造方法も、本発明の光導波路集積回路装置
及びその製造方法に含まれる。Although the present invention has been described above based on its preferred embodiments and concepts, the present invention is not limited to the configurations of the above-described embodiments and the like, and is not limited to the configurations of the above-described embodiments and the like. The optical waveguide integrated device and its manufacturing method to which various modifications and changes are made are also included in the optical waveguide integrated circuit device and its manufacturing method of the present invention.
【００４１】[0041]
【発明の効果】以上説明したように、本発明によると、
光導波路のコア層を溝内に配置した構成により、温度変
化による影響を除いて、光導波路の配置精度及び光結合
の信頼性が高い光導波路集積回路装置を提供することが
出来る。As described above, according to the present invention,
With the configuration in which the core layer of the optical waveguide is arranged in the groove, it is possible to provide an optical waveguide integrated circuit device in which the arrangement accuracy of the optical waveguide and the reliability of optical coupling are high, excluding the influence of temperature change.
【００４２】また、本発明の光導波路集積回路装置の製
造方法によると、上記光導波路の配置精度及び光結合の
信頼性が高い光導波路集積回路装置を特に容易に製造で
きる。Further, according to the method of manufacturing the optical waveguide integrated circuit device of the present invention, the optical waveguide integrated circuit device having high optical waveguide arrangement accuracy and high reliability of optical coupling can be manufactured particularly easily.
【図１】本発明の一実施例の光導波路集積回路装置の斜
視図。FIG. 1 is a perspective view of an optical waveguide integrated circuit device according to an embodiment of the present invention.
【図２】（ａ）〜（ｈ）は、図１の光導波路集積回路装
置の製造工程を順次に示す断面図。2A to 2H are cross-sectional views sequentially showing manufacturing steps of the optical waveguide integrated circuit device of FIG.
【図３】図１の光導波路集積回路装置における光導波路
の変形例の断面図。3 is a cross-sectional view of a modified example of an optical waveguide in the optical waveguide integrated circuit device of FIG.
【図４】図１の光導波路集積回路装置における光導波路
の変形例の断面図。4 is a cross-sectional view of a modified example of an optical waveguide in the optical waveguide integrated circuit device of FIG.
【図５】図１の光導波路集積回路装置における光導波路
の変形例の断面図。5 is a cross-sectional view of a modification of the optical waveguide in the optical waveguide integrated circuit device of FIG.
【図６】図１の光導波路集積回路装置における光導波路
の変形例の斜視図。6 is a perspective view of a modification of the optical waveguide in the optical waveguide integrated circuit device of FIG.
【図７】図６の光導波路と比較するための比較例。7 is a comparative example for comparison with the optical waveguide of FIG.
【図８】本発明の第２の実施例の光導波路集積回路装置
の断面図。FIG. 8 is a sectional view of an optical waveguide integrated circuit device according to a second embodiment of the present invention.
【図９】本発明の光導波路集積回路装置の製造の概念を
示す模式的斜視図。FIG. 9 is a schematic perspective view showing the concept of manufacturing the optical waveguide integrated circuit device of the present invention.
【図１０】第１の従来例の光導波路集積回路装置の斜視
図。FIG. 10 is a perspective view of an optical waveguide integrated circuit device of a first conventional example.
【図１１】（ａ）及び（ｂ）は、第２の従来例の光導波
路集積回路装置の製造工程を示す断面図。11A and 11B are cross-sectional views showing a manufacturing process of an optical waveguide integrated circuit device of a second conventional example.
１１、２１ 基板 １１Ａ 第１基板 １１Ｂ 第２基板 １２、２２ 溝（縦溝） １３、２３ クラッド層（透光性有機材料） １４、２４ コア層 １５、２５ 光機能素子（半導体レーザ） １６、２６ 凹部 １７ 配線パターン １８ リブ １９ ケース ２０ コネクタ ２７ 傾斜鏡面 ２８ フォトディテクタ ３１ ウエハ ３２ 光導波路集積モジュール ３３ 光導波路 ３４ 光機能素子 ３５ 電子素子集積回路（ＩＣ） ３６ ボンディング配線 11, 21 Substrate 11A First substrate 11B Second substrate 12, 22 Groove (vertical groove) 13, 23 Cladding layer (translucent organic material) 14, 24 Core layer 15, 25 Optical functional element (semiconductor laser) 16, 26 Recesses 17 Wiring pattern 18 Rib 19 Case 20 Connector 27 Inclined mirror surface 28 Photodetector 31 Wafer 32 Optical waveguide integrated module 33 Optical waveguide 34 Optical functional element 35 Electronic element integrated circuit (IC) 36 Bonding wiring
Claims (11)
能素子と光学的に結合される光導波路とを共通の基板上
に備える光導波路集積回路装置において、 前記光導波路を透光性有機材料から構成し、該光導波路
のクラッド層とコア層とを受容する溝を基板の主面に形
成したことを特徴とする光導波路集積回路装置。1. An optical waveguide integrated circuit device comprising at least one optical functional element and an optical waveguide optically coupled to the optical functional element on a common substrate, wherein the optical waveguide is a translucent organic material. An optical waveguide integrated circuit device comprising: a groove formed on the main surface of the substrate, the groove receiving a clad layer and a core layer of the optical waveguide.
板の主面の少なくとも一部にまで形成したことを特徴と
する、請求項１に記載の光導波路集積回路装置。2. The optical waveguide integrated circuit device according to claim 1, wherein the clad layer is formed on at least a part of a main surface of the substrate adjacent to the groove.
ラッド層を構成する透光性有機材料により覆われる、請
求項１又は２に記載の光導波路集積回路装置。3. The optical waveguide integrated circuit device according to claim 1, wherein the functional element including the optical functional element is covered with a translucent organic material forming the cladding layer.
る、請求項１乃至３の何れか一に記載の光導波路集積回
路装置。4. The optical waveguide integrated circuit device according to claim 1, wherein a cross section of the groove is formed in an inverted mesa shape.
光の出射端において、対応する１つの前記溝内に配置さ
れる、請求項１乃至４の何れか一に記載の光導波路集積
回路装置。5. The optical waveguide integrated circuit device according to claim 1, wherein each of the plurality of core layers is arranged in at least one corresponding groove at least at a light emission end. .
る、請求項１乃至５の何れか一に記載の光導波路集積回
路装置。6. The optical waveguide integrated circuit device according to claim 1, wherein a plurality of core layers are arranged in a single groove.
着される第２の基板とから構成され、前記溝が前記第２
の基板が除去された位置に形成される、請求項１乃至６
の何れか一に記載の光導波路集積回路装置。7. The substrate is composed of a first substrate and a second substrate fixed on the first substrate, and the groove is the second substrate.
7. The substrate is formed at a position where the substrate is removed.
The optical waveguide integrated circuit device according to any one of 1.
イミド、ポリイミド、ポリメチルメタクリレート、エポ
キシ樹脂及び紫外線硬化性樹脂から成る群から選択され
る、請求項１乃至７の何れか一に記載の光導波路集積回
路装置。8. The light transmissive organic material according to claim 1, wherein the translucent organic material is selected from the group consisting of fluorinated polyimide, polyimide, polymethylmethacrylate, epoxy resin and UV curable resin. Optical waveguide integrated circuit device.
成され、前記コア層の幅は、前記半導体レーザ側の端面
においてレーザ光のモードフィールドの径に、前記半導
体レーザ側と逆側の端面において光ファイバのモードフ
ィールドの径に夫々実質的に一致する、請求項１乃至８
の何れか一に記載の光導波路集積回路装置。9. The optical functional element is configured as a semiconductor laser, and the width of the core layer is equal to the diameter of the mode field of the laser light on the end face on the semiconductor laser side and the width on the end face on the side opposite to the semiconductor laser side. 9. The diameters of the mode fields of the fibers are substantially the same, respectively.
The optical waveguide integrated circuit device according to any one of 1.
構成されると共に、前記光導波路の半導体レーザ側と逆
側の端部に配置され該光導波路の出力光を受けて前記主
面と略直交する方向に反射する傾斜鏡面と、該傾斜鏡面
からの反射光を受光する受光素子とを更に備えることを
特徴とする、請求項１乃至８の何れか一に記載の光導波
路集積回路装置。10. The optical functional element is configured as a semiconductor laser, and is arranged at an end portion of the optical waveguide opposite to the semiconductor laser side and receives output light of the optical waveguide and is substantially orthogonal to the main surface. 9. The optical waveguide integrated circuit device according to claim 1, further comprising a tilted mirror surface that reflects in a direction, and a light receiving element that receives light reflected from the tilted mirror surface.
光導波路集積回路装置を製造する方法であって、前記基
板の主面に溝を形成する第１ステップと、該基板上に光
機能素子を固定する第２ステップと、該第２ステップに
後続し、前記溝内に前記光導波路を形成する第３ステッ
プとを有することを特徴とする光導波路集積回路装置の
製造方法。11. A method of manufacturing an optical waveguide integrated circuit device according to claim 1, comprising a first step of forming a groove on a main surface of the substrate, and an optical method on the substrate. A method of manufacturing an optical waveguide integrated circuit device, comprising: a second step of fixing a functional element; and a third step following the second step and forming the optical waveguide in the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9310495A JPH08264748A (en) | 1995-03-27 | 1995-03-27 | Optical waveguide integrated circuit device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9310495A JPH08264748A (en) | 1995-03-27 | 1995-03-27 | Optical waveguide integrated circuit device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08264748A true JPH08264748A (en) | 1996-10-11 |
Family
ID=14073226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9310495A Pending JPH08264748A (en) | 1995-03-27 | 1995-03-27 | Optical waveguide integrated circuit device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08264748A (en) |
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