CN217062837U - Mid-infrared semiconductor laser emitting device - Google Patents
Mid-infrared semiconductor laser emitting device Download PDFInfo
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- CN217062837U CN217062837U CN202220959861.2U CN202220959861U CN217062837U CN 217062837 U CN217062837 U CN 217062837U CN 202220959861 U CN202220959861 U CN 202220959861U CN 217062837 U CN217062837 U CN 217062837U
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- semiconductor laser
- infrared semiconductor
- quadrangular body
- reflecting surface
- parallel quadrangular
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000002834 transmittance Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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Abstract
The invention discloses an emitting device of a mid-infrared semiconductor laser. The device comprises a 4.6 mu m quantum cascade laser (1), a collimating mirror (2), a parallel quadrangular body (3) and a focusing mirror (4). The parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an exit surface (3-4). The 4.6 mu m quantum cascade laser (1) is vertically incident to an incident surface (3-1) of a parallel quadrangular body (3) through a corresponding collimating mirror (2), total reflection occurs on a first reflecting surface (3-2) of the parallel quadrangular body (3), a light beam after total reflection is subjected to total reflection through a second reflecting surface (3-3) of the parallel quadrangular body (3), and then the light beam is output through an exit surface (3-4) of the parallel quadrangular body (3). The output light beam is emitted by the 4.6 mu m intermediate infrared semiconductor laser through the focusing mirror (4).
Description
Technical Field
The invention relates to an emitting device of a mid-infrared semiconductor laser, belonging to the technical field of mid-infrared semiconductor lasers.
Background
The mid-infrared semiconductor laser has the advantages of small volume, light weight, high efficiency, long service life and the like, and has important application prospect in the fields of environmental monitoring, laser radar, medical diagnosis, space communication and the like. Further improvement of the output power is difficult due to limitations of device structure and material properties. In order to further improve the output power of the intermediate infrared semiconductor laser, an intermediate infrared semiconductor laser emitting device is provided.
Disclosure of Invention
In order to improve the output power of the intermediate infrared semiconductor laser, a mid infrared semiconductor laser emitting device is invented.
The invention relates to an emitting device of a mid-infrared semiconductor laser, which comprises a 4.6 mu m quantum cascade laser (1), a collimating mirror (2), a parallel quadrangular body (3) and a focusing mirror (4). The parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4).
The method is characterized in that:
the output wavelength of each 4.6 mu m quantum cascade laser of the 4.6 mu m quantum cascade laser (1) is 4.6 mu m, and the output power is higher than 100 mW.
The transmissivity of the front surface and the rear surface of the collimating mirror (2) to the wave band of 3.6-5.6 mu m is higher than 90%.
The parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4). The first reflection surface (3-2) and the incident surface (3-1) form an angle of 45 degrees, the second reflection surface (3-3) and the emergent surface (3-4) form an angle of 45 degrees, and the transmissivity of the incident surface (3-1) and the emergent surface (3-4) to the wave band is higher than 90% in the range of 3.6 mu m-5.6 mu m.
The front surface and the rear surface of the focusing mirror (4) have a transmittance higher than 90% to the wave band of 3.6-5.6 mu m.
Drawings
Fig. 1 is a schematic structural diagram of an emitting device of a mid-infrared semiconductor laser, which is taken as an abstract figure at the same time. FIG. 2 is a cross-sectional optical path diagram of a parallel quadrangular prism (3), which can clearly show the traveling path of each quantum cascade semiconductor laser beam.
Detailed Description
The present invention is described in further detail below with reference to fig. 1 and 2.
The invention discloses an emitting device of a mid-infrared semiconductor laser, which comprises a 4.6 mu m quantum cascade laser (1), a collimating mirror (2), a parallelogram (3) and a focusing mirror (4). The parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4).
Fig. 1 specifically illustrates ten quantum cascade semiconductor lasers of 4.6 μm as an example. Each of ten 4.6 mu m quantum cascade semiconductor lasers (1) is vertically incident on an incident surface (3-1) of a parallel quadrangular body (3) through a corresponding collimating mirror (2), total reflection is carried out on a first reflecting surface (3-2) of the parallel quadrangular body (3), total reflection light beams are totally reflected through a second reflecting surface (3-3) of the parallel quadrangular body (3), and then the total reflection light beams are output through an emergent surface (3-4) of the parallel quadrangular body (3). And outputting the output ten light beams through a focusing mirror (4) to realize the output of the 4.6 mu m intermediate infrared semiconductor laser.
Claims (1)
1. The emitting device of the intermediate infrared semiconductor laser is characterized by comprising a 4.6 mu m quantum cascade laser (1), a collimating mirror (2), a parallel quadrangular body (3) and a focusing mirror (4); the output wavelength of each 4.6 mu m quantum cascade laser of the 4.6 mu m quantum cascade laser (1) is 4.6 mu m, and the output power is higher than 100 mW; the front and back surfaces of the collimating mirror (2) have a transmittance higher than 90% to the wave band of 3.6-5.6 mu m; the parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4), the first reflecting surface (3-2) and the incident surface (3-1) form an angle of 45 degrees, the second reflecting surface (3-3) and the emergent surface (3-4) form an angle of 45 degrees, and the transmittance of the incident surface (3-1) and the emergent surface (3-4) to a wave section of 3.6 mu m-5.6 mu m is higher than 90%; the front surface and the rear surface of the focusing mirror (4) have a transmittance higher than 90% to the wave band of 3.6-5.6 mu m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220959861.2U CN217062837U (en) | 2022-04-25 | 2022-04-25 | Mid-infrared semiconductor laser emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220959861.2U CN217062837U (en) | 2022-04-25 | 2022-04-25 | Mid-infrared semiconductor laser emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217062837U true CN217062837U (en) | 2022-07-26 |
Family
ID=82473041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220959861.2U Expired - Fee Related CN217062837U (en) | 2022-04-25 | 2022-04-25 | Mid-infrared semiconductor laser emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217062837U (en) |
-
2022
- 2022-04-25 CN CN202220959861.2U patent/CN217062837U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20220726 |
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| CF01 | Termination of patent right due to non-payment of annual fee |