CN114678773A - Mid-infrared semiconductor laser emitting device - Google Patents

Mid-infrared semiconductor laser emitting device Download PDF

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Publication number
CN114678773A
CN114678773A CN202210436758.4A CN202210436758A CN114678773A CN 114678773 A CN114678773 A CN 114678773A CN 202210436758 A CN202210436758 A CN 202210436758A CN 114678773 A CN114678773 A CN 114678773A
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CN
China
Prior art keywords
semiconductor laser
reflecting surface
infrared semiconductor
mid
quadrangular body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210436758.4A
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Chinese (zh)
Inventor
李再金
韦龙
马宇航
丁可可
李轩
施钧策
孙康迅
邱美叶
郑照轩
郝若竹
曲轶
乔忠良
曾丽娜
李林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hainan Normal University
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Hainan Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hainan Normal University filed Critical Hainan Normal University
Priority to CN202210436758.4A priority Critical patent/CN114678773A/en
Publication of CN114678773A publication Critical patent/CN114678773A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075—Beam steering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses an emitting device of a mid-infrared semiconductor laser. The device comprises a 4.6 mu m quantum cascade laser (1), a collimating mirror (2), a parallel quadrangular body (3) and a focusing mirror (4). The parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4). The 4.6 mu m quantum cascade laser (1) vertically enters an incident surface (3-1) of the parallel quadrangular body (3) through the corresponding collimating mirror (2), is totally reflected on a first reflecting surface (3-2) of the parallel quadrangular body (3), and totally reflected light beams are totally reflected through a second reflecting surface (3-3) of the parallel quadrangular body (3) and then output through an emergent surface (3-4) of the parallel quadrangular body (3). The output light beam is emitted by the 4.6 mu m mid-infrared semiconductor laser through the focusing mirror (4).

Description

Mid-infrared semiconductor laser emitting device
Technical Field
The invention relates to an emitting device of a mid-infrared semiconductor laser, belonging to the technical field of mid-infrared semiconductor lasers.
Background
The mid-infrared semiconductor laser has the advantages of small volume, light weight, high efficiency, long service life and the like, and has important application prospect in the fields of environmental monitoring, laser radar, medical diagnosis, space communication and the like. Further improvement of output power is difficult due to limitations of device structure and material properties. In order to further improve the output power of the intermediate infrared semiconductor laser, an intermediate infrared semiconductor laser emitting device is provided.
Disclosure of Invention
In order to improve the output power of the intermediate infrared semiconductor laser, a mid infrared semiconductor laser emitting device is invented.
The invention relates to an emitting device of a mid-infrared semiconductor laser, which comprises a 4.6 mu m quantum cascade laser (1), a collimating mirror (2), a parallel quadrangular body (3) and a focusing mirror (4). The parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4).
The method is characterized in that:
the output wavelength of each 4.6 mu m quantum cascade laser of the 4.6 mu m quantum cascade laser (1) is 4.6 mu m, and the output power is higher than 100 mW.
The transmissivity of the front surface and the rear surface of the collimating mirror (2) to the wave band of 3.6-5.6 mu m is higher than 90%.
The parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4). The first reflecting surface (3-2) and the incident surface (3-1) form an angle of 45 degrees, the second reflecting surface (3-3) and the emergent surface (3-4) form an angle of 45 degrees, and the transmissivity of the incident surface (3-1) and the emergent surface (3-4) to the wave band of 3.6 mu m-5.6 mu m is higher than 90%.
The transmissivity of the front surface and the rear surface of the focusing mirror (4) to the wave band of 3.6 mu m-5.6 mu m is higher than 90%.
Drawings
Fig. 1 is a schematic structural diagram of an emitting device of a mid-infrared semiconductor laser, which is taken as an abstract drawing at the same time. FIG. 2 is a cross-sectional optical path diagram of a parallel quadrangular prism (3), which can clearly show the traveling path of each quantum cascade semiconductor laser beam.
Detailed Description
The present invention is described in further detail below with reference to fig. 1 and 2.
The invention discloses a transmitting device of a mid-infrared semiconductor laser, which comprises a 4.6 mu m quantum cascade laser (1), a collimating mirror (2), a parallel quadrangular body (3) and a focusing mirror (4). The parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4).
Fig. 1 specifically illustrates ten quantum cascade semiconductor lasers of 4.6 μm as an example. Each of ten 4.6 mu m quantum cascade semiconductor lasers (1) is vertically incident on an incident surface (3-1) of a parallel quadrangular body (3) through a corresponding collimating mirror (2), total reflection is carried out on a first reflecting surface (3-2) of the parallel quadrangular body (3), total reflection light beams are totally reflected through a second reflecting surface (3-3) of the parallel quadrangular body (3), and then the total reflection light beams are output through an emergent surface (3-4) of the parallel quadrangular body (3). And outputting the output ten light beams through a focusing mirror (4) to realize the output of the 4.6 mu m intermediate infrared semiconductor laser.

Claims (1)

1. The emitting device of the intermediate infrared semiconductor laser is characterized by comprising a 4.6 mu m quantum cascade laser (1), a collimating mirror (2), a parallel quadrangular body (3) and a focusing mirror (4); the output wavelength of each 4.6 mu m quantum cascade laser of the 4.6 mu m quantum cascade laser (1) is 4.6 mu m, and the output power is higher than 100 mW; the front and back surfaces of the collimating mirror (2) have a transmittance higher than 90% to the wave band of 3.6-5.6 mu m; the parallel quadrangular body (3) comprises an incident surface (3-1), a first reflecting surface (3-2), a second reflecting surface (3-3) and an emergent surface (3-4), the first reflecting surface (3-2) and the incident surface (3-1) form an angle of 45 degrees, the second reflecting surface (3-3) and the emergent surface (3-4) form an angle of 45 degrees, and the transmittance of the incident surface (3-1) and the emergent surface (3-4) to a wave section of 3.6 mu m-5.6 mu m is higher than 90%; the transmissivity of the front surface and the rear surface of the focusing mirror (4) to the wave band of 3.6 mu m-5.6 mu m is higher than 90%.
CN202210436758.4A 2022-04-25 2022-04-25 Mid-infrared semiconductor laser emitting device Pending CN114678773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210436758.4A CN114678773A (en) 2022-04-25 2022-04-25 Mid-infrared semiconductor laser emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210436758.4A CN114678773A (en) 2022-04-25 2022-04-25 Mid-infrared semiconductor laser emitting device

Publications (1)

Publication Number Publication Date
CN114678773A true CN114678773A (en) 2022-06-28

Family

ID=82079333

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210436758.4A Pending CN114678773A (en) 2022-04-25 2022-04-25 Mid-infrared semiconductor laser emitting device

Country Status (1)

Country Link
CN (1) CN114678773A (en)

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