CN216770870U - High-frequency-response high-temperature-resistant silicon carbide pressure-sensitive element based on MEMS - Google Patents
High-frequency-response high-temperature-resistant silicon carbide pressure-sensitive element based on MEMS Download PDFInfo
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- CN216770870U CN216770870U CN202220298741.2U CN202220298741U CN216770870U CN 216770870 U CN216770870 U CN 216770870U CN 202220298741 U CN202220298741 U CN 202220298741U CN 216770870 U CN216770870 U CN 216770870U
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Abstract
The utility model discloses a high-frequency-response high-temperature-resistant silicon carbide pressure sensing element based on an MEMS (micro-electromechanical system), which comprises a silicon carbide pressure sensing structure, a Kovar pin and an insulating base; the silicon carbide pressure sensing structure comprises a silicon carbide chip and a silicon carbide cup, wherein a conductive sintered body is arranged in the silicon carbide cup; an insulating sintered body is arranged below the silicon carbide pressure-sensitive structure, and the silicon carbide pressure-sensitive structure is connected with the insulating base through the conductive sintered body and the insulating sintered body; the switching terminal is connected with the lower portion of the insulating base, and the outer cylindrical surface of the insulating base and the outer cylindrical surface of the switching terminal are connected with the metal tube shell. The silicon carbide pressure sensing structure is adopted, so that the high-temperature stability and reliability of the sensor can be effectively improved, and meanwhile, the silicon carbide pressure sensing structure is connected with the insulating base through the insulating sintered body and the conductive sintered body, so that the output stability of the pressure sensing element is effectively ensured, and the performance of the element is improved.
Description
Technical Field
The utility model relates to a pressure sensing element, in particular to a high-frequency-response high-temperature-resistant silicon carbide pressure sensing element based on an MEMS.
Background
The high-frequency-response high-temperature-resistant micro-electromechanical system pressure sensor is not only used for pressure detection of engines such as airplanes, tanks, ships and warships, but also can be used for pressure detection of heat-resistant cavities and surfaces of high-temperature rockets, missiles, satellites and the like, and is a key basic element in the system, and a core device in the pressure sensor is a pressure sensing element (core body).
The performance advantage of silicon carbide over silicon is that SiC substrates have higher electric field strengths, and thus a thinner base structure can be used, perhaps only one-tenth the thickness of the silicon epitaxial layer. In addition, the doping concentration of SiC is 2 times higher than that of silicon, so the surface resistance of the device is reduced and the conduction loss is also significantly reduced.
The existing pressure sensing element has no insulating sintered body, the output fluctuation is large at high temperature, and especially when the pressure sensing element enters the next high temperature after the previous high temperature, oxygen in the air can enter the conductor sintered body and the high-temperature electrode of the chip, so that the stability of the output is influenced by local oxidation.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the defects of the prior art and provide a high-frequency-response high-temperature-resistant silicon carbide pressure-sensitive element based on an MEMS (micro-electromechanical system), which can ensure that the output stability of the element is high under high temperature and high pressure.
The purpose of the utility model is realized as follows: a high-frequency response and high-temperature resistance silicon carbide pressure sensing element based on MEMS comprises a silicon carbide pressure sensing structure, a kovar pin and an insulating base; the silicon carbide pressure sensing structure comprises a silicon carbide chip and a silicon carbide cup, wherein a conductive sintered body is arranged in the silicon carbide cup; an insulating sintered body is arranged below the silicon carbide pressure-sensing structure, and the silicon carbide pressure-sensing structure is connected with the insulating base through the conductive sintered body and the insulating sintered body; the lower part of the insulating base is connected with a switching terminal, and the outer cylindrical surface of the insulating base and the outer cylindrical surface of the switching terminal are connected with a metal tube shell.
By adopting the technical scheme, compared with the prior art, the utility model has the beneficial effects that: the silicon carbide pressure sensing structure can effectively improve the high-temperature stability and reliability of the sensor, and meanwhile, the silicon carbide pressure sensing structure is connected with the insulating base through the insulating sintered body and the conductive sintered body, so that the insulating sintered body effectively prevents oxygen in the air from entering the silicon carbide pressure sensing structure, the output stability of the pressure sensing element is effectively guaranteed, and the performance of the element is improved.
In order to enable the kovar pins to be connected better, a first through hole is formed in the insulating sintered body, a second through hole is formed in the insulating base, and a third through hole is formed in the switching terminal; one end of the kovar pin is connected with the conductive sintered body, and the other end of the kovar pin penetrates through the first through hole, the second through hole and the third through hole to extend into the insulating sleeve below the kovar pin.
In order to enable the pressure detection to be more accurate, a first groove is formed in the back of the silicon carbide chip, and a sensitive membrane is arranged in the first groove; and high-temperature electrodes are arranged on two sides of the front surface of the silicon carbide chip.
In order to adapt to the deformation space of the sensitive membrane, a second groove is formed in the silicon carbide cup, and a sealing cavity is formed by bonding the silicon carbide chip and the silicon carbide cup through the second groove.
Furthermore, the insulating base is made of an aluminum nitride ceramic material.
Drawings
FIG. 1 is a schematic structural view of the present invention.
The pressure-sensitive silicon carbide chip comprises a 1100 silicon carbide pressure-sensitive structure, a 1110 silicon carbide chip, a 1111 first groove, a 1112 sensitive membrane, a 1113 high-temperature electrode, a 1120 silicon carbide cup, a 1121 second groove, a 1130 conductive sintered body, a 1200 insulating sintered body, a 1210 first through hole, a 1300 insulating base, a 1310 second through hole, a 1400 adapting terminal, a 1410 third through hole, a 1500 kovar pin and a 1600 metal tube shell.
Detailed Description
A MEMS-based high frequency response, high temperature resistant silicon carbide pressure sensing component as shown in fig. 1, comprising a silicon carbide pressure sensing structure 1100, a kovar pin 1500, and an insulating base 1300; the silicon carbide pressure-sensitive structure 1100 comprises a silicon carbide chip 1110 and a silicon carbide cup 1120, wherein a conductive sintered body 1130 is arranged in the silicon carbide cup 1120; an insulating sintered body 1200 is arranged below the silicon carbide pressure-sensing structure 1100, and the silicon carbide pressure-sensing structure 1100 is connected with an insulating base 1300 through a conductive sintered body 1130 and the insulating sintered body 1200; the lower part of the insulating base 1300 is connected with a switching terminal 1400, and the outer cylindrical surface of the insulating base 1300 and the outer cylindrical surface of the switching terminal 1400 are connected with a metal tube shell 1600.
The insulating sintered body 1200 is provided with a first through hole 1210, the insulating base 1300 is provided with a second through hole 1310, and the adapter terminal 1400 is provided with a third through hole 1410; one end of the kovar pin 1500 is connected with the conductive sintered body 1130, and the other end extends into the insulating sleeve below through the first through hole 1210, the second through hole 1310 and the third through hole 1410; a first groove 1111 is arranged on the back surface of the silicon carbide chip 1110, and a sensitive membrane 1112 is arranged in the first groove 1111; high-temperature electrodes 1113 are arranged on two sides of the front surface of the silicon carbide chip 1110, the high-temperature electrodes 1113 are Ti/TiN/Pt multilayer metal electrodes, a second groove 1121 is arranged on the silicon carbide cup 1120, and the second groove 1121 forms a sealed cavity through bonding of the silicon carbide chip 1110 and the silicon carbide cup 1120; the insulating sintered body 1200 uses glass frit (B)2O3ZnO PbO) and the conductive sintered body 1130 was made of silver powder glass frit (silver nano-paste + B)2O3ZnO-PbO), the insulating base 1300 is made of an aluminum nitride ceramic material, and the metal package 1600 is made of a ceramic package.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (5)
1. A high-frequency response and high-temperature resistance silicon carbide pressure sensing element based on MEMS is characterized by comprising a silicon carbide pressure sensing structure, a Kovar pin and an insulating base; the silicon carbide pressure sensing structure comprises a silicon carbide chip and a silicon carbide cup, wherein a conductive sintered body is arranged in the silicon carbide cup; an insulating sintered body is arranged below the silicon carbide pressure-sensing structure, and the silicon carbide pressure-sensing structure is connected with the insulating base through the conductive sintered body and the insulating sintered body; the lower part of the insulating base is connected with a switching terminal, and the outer cylindrical surface of the insulating base and the outer cylindrical surface of the switching terminal are connected with a metal tube shell.
2. A MEMS-based high frequency response, high temperature resistant silicon carbide pressure sensing element as claimed in claim 1 wherein said dielectric sintered body has a first through hole formed therein, said dielectric base has a second through hole formed therein, and said relay terminal has a third through hole formed therein; one end of the kovar pin is connected with the conductive sintered body, and the other end of the kovar pin penetrates through the first through hole, the second through hole and the third through hole to extend into the insulating sleeve below the kovar pin.
3. The MEMS-based high-frequency-response high-temperature-resistant silicon carbide pressure-sensitive element as claimed in claim 1, wherein a first groove is formed in the back surface of the silicon carbide chip, and a sensitive membrane is arranged in the first groove; and high-temperature electrodes are arranged on two sides of the front surface of the silicon carbide chip.
4. The MEMS-based high-frequency-response high-temperature-resistant silicon carbide pressure-sensitive element as claimed in claim 1, wherein a second groove is formed in the silicon carbide cup, and the second groove forms a sealed cavity by bonding the silicon carbide chip and the silicon carbide cup.
5. A MEMS-based high frequency response, high temperature resistant silicon carbide pressure sensing element as claimed in claim 1 wherein said dielectric base is formed of an aluminum nitride ceramic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220298741.2U CN216770870U (en) | 2022-02-15 | 2022-02-15 | High-frequency-response high-temperature-resistant silicon carbide pressure-sensitive element based on MEMS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220298741.2U CN216770870U (en) | 2022-02-15 | 2022-02-15 | High-frequency-response high-temperature-resistant silicon carbide pressure-sensitive element based on MEMS |
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| Publication Number | Publication Date |
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| CN216770870U true CN216770870U (en) | 2022-06-17 |
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| CN202220298741.2U Active CN216770870U (en) | 2022-02-15 | 2022-02-15 | High-frequency-response high-temperature-resistant silicon carbide pressure-sensitive element based on MEMS |
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| CN (1) | CN216770870U (en) |
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2022
- 2022-02-15 CN CN202220298741.2U patent/CN216770870U/en active Active
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