CN215893878U - High-temperature-resistant oil-filled pressure detection device - Google Patents
High-temperature-resistant oil-filled pressure detection device Download PDFInfo
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- CN215893878U CN215893878U CN202121391495.7U CN202121391495U CN215893878U CN 215893878 U CN215893878 U CN 215893878U CN 202121391495 U CN202121391495 U CN 202121391495U CN 215893878 U CN215893878 U CN 215893878U
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Abstract
The utility model discloses a high-temperature-resistant oil-filled pressure detection device which comprises a shell, wherein a pressure ring is arranged at the top of the shell, a corrugated diaphragm is arranged inside the pressure ring, the corrugated diaphragm and the upper part of the shell form a closed oil-filled cavity, and high-temperature silicone oil is filled in the oil-filled cavity; a glass insulator is hermetically arranged in the shell, an SOI pressure sensitive chip is arranged at the top of the glass insulator, and one end of a metal wire penetrates through the glass insulator and is electrically connected with the bottom of the SOI pressure sensitive chip; the SOI pressure sensitive chip is positioned in the oil charging cavity and is contacted with high-temperature silicon oil, a ceramic wafer is arranged between the SOI pressure sensitive chip and the corrugated diaphragm, and a through hole is formed in the middle of the ceramic wafer. The utility model realizes the pressure measurement in the high-temperature environment, and has the characteristics of good dynamic characteristic, high temperature resistance and high precision, and has better practicability.
Description
Technical Field
The utility model belongs to the technical field of pressure sensors, and particularly relates to a high-temperature-resistant oil-filled pressure detection device.
Background
The traditional silicon pressure sensor is usually isolated by a PN junction, and the process has the defects that the working temperature is low, and the PN junction leakage current is increased under a high-temperature environment (more than or equal to 85 ℃), so that the device is failed. In order to meet the pressure testing requirements under the high-temperature and severe working conditions of aerospace, petrochemical industry, internal combustion engines and the like, a high-temperature resistant pressure sensor based on a silicon isolation SOI (silicon on insulator) technology is widely applied.
The SOI pressure sensor is a novel semiconductor high-temperature pressure sensor, the conventional SOI pressure sensor takes N-type silicon as a substrate material, a group of P-type resistors are processed on the substrate material through thick boron diffusion, the P-type resistors and the N-type substrate are used as medium isolation layers through oxidation layers, a Wheatstone bridge is formed by connecting the resistors, after the diffusion resistors are acted by force, the resistivity changes, mechanical signals are converted into equal-proportion electric signals through circuits to be output, and the purpose of pressure measurement is achieved. Compared with a diffused silicon pressure sensor, the high-sensitivity high-stability diffusion silicon pressure sensor has higher working temperature, has higher sensitivity, and has the characteristics of high sensitivity, high use temperature range and high stability.
At present, the SOI pressure sensor generally realizes the lead connection between a chip and an outer lead by hot-pressing ball bonding, ultrasonic ball bonding and other methods, and the failure proportion of the lead bonding is up to 30 percent, and the anti-seismic performance is poor. The conventional oil-filled packaging mode has the limitation of the silicone oil filling process and the use temperature of the silicone oil, so the long-term use temperature cannot exceed 150 ℃.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a high-temperature-resistant oil-filling pressure detection device, and aims to solve the problems.
The utility model is mainly realized by the following technical scheme:
a high-temperature-resistant oil-filled pressure detection device comprises a shell, wherein a pressure ring is arranged at the top of the shell, a corrugated diaphragm is arranged inside the pressure ring, the upper parts of the pressure ring, the corrugated diaphragm and the shell form a closed oil-filled cavity, and high-temperature silicone oil is filled in the oil-filled cavity; a glass insulator is hermetically arranged in the shell, an SOI pressure sensitive chip is arranged at the top of the glass insulator, and one end of a metal wire penetrates through the glass insulator and is electrically connected with the bottom of the SOI pressure sensitive chip; the SOI pressure sensitive chip is positioned in the oil charging cavity and is contacted with high-temperature silicon oil, a ceramic wafer is arranged between the SOI pressure sensitive chip and the corrugated diaphragm, and a through hole is formed in the middle of the ceramic wafer.
When the SOI pressure sensor is used, when the SOI pressure sensor is subjected to pressure, the pressure is transmitted to the SOI pressure sensitive chip by the corrugated diaphragm through the high-temperature silicon oil, the SOI pressure sensitive chip is subjected to the pressure transmitted by the high-temperature silicon oil, so that the silicon diaphragm of the SOI pressure sensitive chip generates elastic deformation, the resistance is changed due to the stress change on the silicon diaphragm, the Wheatstone bridge is out of balance, a voltage signal which changes along with the resistivity is generated, and the SOI pressure sensitive chip outputs an analog voltage measurement signal which is proportional to the measured pressure through the metal wire under the excitation of voltage or current. The high-temperature silicone oil avoids the direct contact between the SOI pressure sensitive chip and a medium to be detected, and protects the chip; the ceramic chip is used for reducing the volume of the oil charging cavity, the arrangement of the through hole prevents the high-temperature silicon oil transfer pressure from being offset by the ceramic chip, the detection accuracy is improved, and the ceramic chip has better practicability.
The utility model adopts SOI chip as material to manufacture pressure sensitive chip, and SiO2The dielectric isolation layer replaces the traditional PN junction isolation, and the insulation isolation mode ensures that no current channel exists between the device and the substrate, thereby avoiding the common latch-up effect in a bulk silicon circuit and improving the reliability of the circuit.
In order to better implement the utility model, 4 resistor strips are further formed on the (100) crystal plane of the SOI pressure sensitive chip along the [110] crystal direction and at the maximum stress through strong boron diffusion, and the 4 resistor strips are connected into a Wheatstone bridge.
A layer of SiO is introduced between the substrate and the top layer silicon of the SOI pressure sensitive chip2Forming a dielectric isolation layer on the top silicon edge [110]]A group of resistance strips with approximately equal size are manufactured at the position with the maximum stress of the crystal orientation by using a concentrated boron diffusion process, the resistance strips are interconnected to form a Wheatstone bridge, borosilicate glass is bonded on the front side to form a vacuum cavity, and a pressure sensing film is formed on the back side by adopting deep silicon etching. Using SiO2The dielectric isolation layer replaces the traditional PN junction isolation, and the insulation isolation mode ensures that no current channel exists between the device and the substrate, thereby avoiding the common latch-up effect in a bulk silicon circuit and improving the reliability of the circuit. The SOI pressure sensitive chip is prior art and is not a major improvement of the present invention, and therefore is not described in detail. Said (100) plane and [110]]The crystal orientation is a general term in the art and thus is not described in detail.
In order to better implement the utility model, further, a tapered hole is formed in the bottom of the SOI pressure sensitive chip, and the metal wire extends into the tapered hole filled with conductive silver paste to implement electrical connection.
In order to better implement the present invention, further, the bottom of the SOI pressure sensitive chip is provided with 5 tapered holes.
The utility model uses the leadless packaging technology to package the SOI chip, the outer lead connecting taper hole is manufactured on the borosilicate glass of the chip by the micromachining method, then the SOI pressure sensitive chip and the glass insulator are sealed together by the glass sintering method, the metal lead is electrically connected with the taper hole by the silver paste sintering method, the temperature can be up to 300 ℃, and the use requirements of various high-temperature pressure measuring systems with the use temperature up to 300 ℃ can be met.
In order to better implement the utility model, further, the SOI pressure sensitive chip, the metal wire, the glass insulator and the shell are integrally sintered and molded.
The high-temperature resistant oil-filled SOI pressure sensor is formed by adopting leadless high-temperature sintering, and the pressure sensing base is formed by adopting the SOI silicon piezoresistive sensitive chip, the shell, the glass insulator and the metal wire to sinter, compared with a gold wire lapping packaging mode, the high-temperature resistant oil-filled SOI pressure sensor is small in size, and the size is not more than phi 13mm and 12.5mm in length.
The utility model adopts a high vacuum silicone oil filling system (vacuum degree 10)-4Pa), and the system adopts a high-temperature purification and high-vacuum degree filling mode to fill the silicone oil, and the filled high-temperature silicone oil can meet the high-stability use requirement of a wide temperature area of-60-250 ℃ in a sealed environment.
In order to better implement the utility model, further, the bottom of the oil-filled cavity is sealed by steel ball welding. The sealing element used at the bottom of the oil filling cavity is hard sealing, and the precision of the steel ball is more than 0.2 mm.
In order to better realize the utility model, the pressure ring is welded with the shell, and the ceramic plate is bonded with the oil-filled cavity. The welding connection mode is favorable for improving the connection strength of the sensor; the ceramic chip is bonded with the oil-filled cavity through epoxy glue.
The utility model has the beneficial effects that:
(1) the reliability is high: the utility model adopts SOI chip as material to manufacture pressure sensitive chip, and SiO2The dielectric isolation layer replaces the traditional PN junction isolation, and the insulation isolation mode ensures that no current channel exists between the device and the substrate, thereby avoiding the common latch-up effect in a bulk silicon circuit and improving the reliability of the circuit.
(2) The use temperature is high: the utility model uses the leadless packaging technology to package the SOI chip, the outside lead wire connecting taper hole is made on the borosilicate glass of the chip by the micromachining method, then the SOI pressure sensitive chip and the glass insulator are sealed together by the glass sintering method, the metal wire is electrically connected with the taper hole by the silver paste sintering method, and the high vacuum silicon oil filling system (vacuum degree 10 is used)-4Pa) is filled with high-temperature silicone oil, can resist the temperature of-60 ℃ to 250 ℃, and can meet the use temperature of-55 ℃ to 220 DEG CThe use requirements of various high-temperature pressure measurement systems are satisfied.
(3) The volume is small: the high-temperature resistant oil-filled SOI pressure sensor is formed by adopting leadless high-temperature sintering, and the pressure sensing base is formed by adopting the SOI silicon piezoresistive sensitive chip, the shell, the glass insulator and the metal wire to sinter, compared with a gold wire lapping packaging mode, the high-temperature resistant oil-filled SOI pressure sensor is small in size, and the size is not more than phi 13mm and 12.5mm in length.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
Wherein: 1. pressing a ring; 2. a corrugated diaphragm; 3. a ceramic plate; 4. an oil-filled cavity; 5. an SOI pressure sensitive chip; 6. a glass insulator; 7. steel balls; 8. a housing; 9. a metal wire.
Detailed Description
The embodiments of the present invention will be further described with reference to the accompanying drawings.
Example 1:
a high-temperature-resistant oil-filled pressure detection device is shown in figure 1 and comprises a shell 8, wherein a pressure ring 1 is arranged at the top of the shell 8, a corrugated diaphragm 2 is arranged inside the pressure ring 1, the corrugated diaphragm 2 and the upper part of the shell 8 form a closed oil-filled cavity 4, and high-temperature silicone oil is filled in the oil-filled cavity 4; a glass insulator 6 is hermetically arranged inside the shell 8, an SOI pressure sensitive chip 5 is arranged at the top of the glass insulator 6, and one end of a metal wire 9 penetrates through the glass insulator 6 and is electrically connected with the bottom of the SOI pressure sensitive chip 5; the SOI pressure sensitive chip 5 is positioned in the oil charging cavity 4, the SOI pressure sensitive chip 5 is contacted with high-temperature silicon oil, a ceramic plate 3 is arranged between the SOI pressure sensitive chip 5 and the corrugated diaphragm 2, and a through hole is formed in the middle of the ceramic plate 3.
When the pressure sensor is used, when the SOI pressure sensor is stressed, the pressure is transmitted to the SOI pressure sensitive chip 5 through the high-temperature silicon oil by the corrugated diaphragm 2, the SOI pressure sensitive chip 5 is stressed by the pressure transmitted by the high-temperature silicon oil, and the SOI pressure sensitive chip 5 outputs an analog voltage measuring signal proportional to the measured pressure through the metal wire 9 under the excitation of voltage or current. The high-temperature silicone oil avoids the direct contact between the SOI pressure sensitive chip 5 and a medium to be detected, and protects the chip; the ceramic plate 3 is used for reducing the volume of the oil charging cavity 4, the arrangement of the through hole avoids the transmission pressure of high-temperature silicon oil from being offset by the ceramic plate 3, the detection accuracy is improved, and the ceramic plate oil charging device has better practicability.
Example 2:
the present embodiment is optimized based on embodiment 1, and 4 resistor strips are formed on the (100) crystal plane of the SOI pressure sensitive chip 5 along the [110] crystal direction and at the maximum stress by strong boron diffusion, and the 4 resistor strips are connected to form a wheatstone bridge.
Further, a layer of SiO is introduced between the substrate and the top silicon of the SOI pressure sensitive chip 52Forming a dielectric isolation layer on the top silicon edge [110]]A group of resistance strips with approximately equal size are manufactured at the position with the maximum stress of the crystal orientation by using a concentrated boron diffusion process, the resistance strips are interconnected to form a Wheatstone bridge, borosilicate glass is bonded on the front side to form a vacuum cavity, and a pressure sensing film is formed on the back side by adopting deep silicon etching. The utility model uses SiO2The dielectric isolation layer replaces the traditional PN junction isolation, and the insulation isolation mode ensures that no current channel exists between the device and the substrate, thereby avoiding the common latch-up effect in a bulk silicon circuit and improving the reliability of the circuit.
Other parts of this embodiment are the same as embodiment 1, and thus are not described again.
Example 3:
the embodiment is optimized on the basis of embodiment 1 or 2, the bottom of the SOI pressure sensitive chip 5 is provided with a tapered hole, and the metal wire 9 extends into the tapered hole filled with conductive silver paste to realize electrical connection.
Further, the bottom of the SOI pressure sensitive chip 5 is provided with 5 tapered holes.
The utility model uses the leadless packaging technology to package the SOI pressure sensitive chip 5, the outer lead connecting taper hole is manufactured on the borosilicate glass of the chip by a micromachining method, then the SOI pressure sensitive chip 5 and the glass insulator 6 are sealed together by a glass sintering method, the metal lead 9 is electrically connected with the taper hole by a silver paste sintering method, the temperature resistance can reach 300 ℃, and the use requirements of various high-temperature pressure measurement systems with the use temperature of 300 ℃ can be met.
The rest of this embodiment is the same as embodiment 1 or 2, and therefore, the description thereof is omitted.
Example 4:
in this embodiment, the optimization is performed based on embodiment 1, and as shown in fig. 1, the SOI pressure sensitive chip 5, the metal wire 9, the glass insulator 6, and the housing 8 are integrally formed by sintering.
The high-temperature resistant oil-filled SOI pressure sensor is formed by adopting leadless high-temperature sintering, the pressure sensing base is formed by adopting an SOI silicon piezoresistive sensitive chip, a shell 8, a glass insulator 6 and a metal wire 9 through sintering, and compared with a gold wire lapping packaging mode, the high-temperature resistant oil-filled SOI pressure sensor is small in size, and the size is not more than 13mm in diameter and 12.5mm in length.
Other parts of this embodiment are the same as those of embodiment 1, and thus are not described again.
Example 5:
the embodiment is optimized on the basis of embodiment 1, and a high-vacuum silicone oil filling system (vacuum degree of 10)- 4Pa), and the system adopts a high-temperature purification and high-vacuum degree filling mode to fill the silicone oil, the filled high-temperature silicone oil can meet the high-stability use requirement of a wide temperature range of-60-250 ℃ in a sealed environment, and the bottom of the oil-filled cavity 4 is welded and sealed by using steel balls 7. The sealing element used at the bottom of the oil filling cavity 4 is hard sealing, and the precision of the steel ball 7 is more than 0.2 mm.
Furthermore, the pressure ring 1 is welded with the shell 8, and the ceramic plate 3 is bonded with the oil-filled cavity 4. The welding connection mode is favorable for improving the connection strength of the sensor; the ceramic plate 3 is bonded with the oil-filled cavity 4 through epoxy glue.
Other parts of this embodiment are the same as those of embodiment 1, and thus are not described again.
Example 6:
a high temperature resistant oil filled pressure detection device, as shown in fig. 1, comprising: the SOI pressure sensitive chip 5 is processed by MEMS technology, and the bottom of the SOI pressure sensitive chip is provided with a taper hole for aligning and fixing with the metal lead 9. The metal wire 9 penetrates through the glass insulator 6 and extends into the conical hole filled with the conductive silver paste. And the glass insulator 6 fixed below the SOI pressure sensitive chip 5 and the shell 8 are integrally sintered at high temperature to form a base bearing the measured pressure. The top of shell 8 has welded clamping ring 1 and ripple diaphragm 2 in proper order to form inclosed oil-filled chamber 4, use the epoxy glue to fix ceramic wafer 3 in oil-filled chamber 4, in order to reduce oil-filled chamber 4 volume, it has high temperature silicone oil to fill in the oil-filled chamber 4, and oil-filled chamber 4 uses steel ball 7 welding seal.
A layer of SiO is introduced between the substrate and the top layer of silicon of the SOISOI pressure sensitive chip 52Forming a dielectric isolation layer on the top silicon edge [110]]A group of resistance strips with approximately equal size are manufactured at the position with the maximum stress of the crystal orientation by using a concentrated boron diffusion process, the resistance strips are interconnected to form a Wheatstone bridge, borosilicate glass is bonded on the front side to form a vacuum cavity, and a pressure sensing film is formed on the back side by adopting deep silicon etching. When the SOI pressure sensor is under pressure, the pressure is transmitted to the SOI pressure sensitive chip 5 by the corrugated diaphragm 2 through the high-temperature silicon oil, the pressure sensitive film is elastically deformed due to the pressure transmitted by the high-temperature silicon oil on the SOI pressure sensitive chip 5, the resistance is changed due to the stress change on the pressure sensitive film, the Wheatstone bridge is out of balance, a voltage signal which is changed along with the resistivity is generated, and an analog voltage measurement signal which is proportional to the measured pressure is output by the SOI pressure sensitive chip 5 through the metal wire 9 under the excitation of voltage or current.
According to the utility model, the direct contact between the SOI pressure sensitive chip 5 and a medium to be detected is avoided through the high-temperature silicone oil, so that the chip is protected; the ceramic plate 3 is used for reducing the volume of the oil-filled cavity 4, and the arrangement of the through hole prevents the high-temperature silicone oil transfer pressure from being offset by the ceramic plate 3, so that the detection accuracy is improved. The utility model realizes the pressure measurement in the high-temperature environment, and has the characteristics of good dynamic property, high temperature resistance (220 ℃) and high precision, thereby having better practicability.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.
Claims (7)
1. The high-temperature-resistant oil-filled pressure detection device is characterized by comprising a shell (8), wherein a pressure ring (1) is arranged at the top of the shell (8), a corrugated diaphragm (2) is arranged inside the pressure ring (1), the upper parts of the pressure ring (1), the corrugated diaphragm (2) and the shell (8) form a closed oil-filled cavity (4), and high-temperature silicone oil is filled in the oil-filled cavity (4); a glass insulator (6) is hermetically arranged inside the shell (8), an SOI pressure sensitive chip (5) is arranged at the top of the glass insulator (6), and one end of a metal wire (9) penetrates through the glass insulator (6) and is electrically connected with the bottom of the SOI pressure sensitive chip (5); the SOI pressure sensitive chip (5) is positioned in the oil filling cavity (4), the SOI pressure sensitive chip (5) is contacted with high-temperature silicon oil, a ceramic wafer (3) is arranged between the SOI pressure sensitive chip (5) and the corrugated diaphragm (2), and a through hole is formed in the middle of the ceramic wafer (3).
2. The high-temperature-resistant oil-filled pressure detection device as claimed in claim 1, wherein 4 resistor strips are formed on the crystal face of the SOI pressure-sensitive chip (5) along the crystal direction and at the maximum stress position through strong boron diffusion, and the 4 resistor strips are connected to form a Wheatstone bridge.
3. The high-temperature-resistant oil-filled pressure detection device as claimed in claim 2, wherein a tapered hole is formed in the bottom of the SOI pressure-sensitive chip (5), and the metal lead (9) extends into the tapered hole filled with conductive silver paste to realize electrical connection.
4. A high temperature resistant oil filled pressure detecting device as claimed in claim 3, wherein the bottom of the SOI pressure sensitive chip (5) is provided with 5 tapered holes.
5. The high-temperature-resistant oil-filled pressure detection device as claimed in any one of claims 1 to 4, wherein the SOI pressure-sensitive chip (5), the metal wire (9), the glass insulator (6) and the shell (8) are integrally formed by sintering.
6. The high-temperature-resistant oil-filled pressure detection device as claimed in claim 1, wherein the bottom of the oil-filled cavity (4) is welded and sealed by using steel balls (7).
7. The high-temperature-resistant oil-filled pressure detection device is characterized in that the pressure ring (1) is welded with the shell (8), and the ceramic plate (3) is bonded with the oil-filled cavity (4).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121391495.7U CN215893878U (en) | 2021-06-22 | 2021-06-22 | High-temperature-resistant oil-filled pressure detection device |
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| CN202121391495.7U CN215893878U (en) | 2021-06-22 | 2021-06-22 | High-temperature-resistant oil-filled pressure detection device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116718305A (en) * | 2023-08-09 | 2023-09-08 | 合肥皖科智能技术有限公司 | Oil charging pressure sensor based on PCB packaging |
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2021
- 2021-06-22 CN CN202121391495.7U patent/CN215893878U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116718305A (en) * | 2023-08-09 | 2023-09-08 | 合肥皖科智能技术有限公司 | Oil charging pressure sensor based on PCB packaging |
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