CN216663292U - Single crystal growth device under electric field condition for laboratory - Google Patents
Single crystal growth device under electric field condition for laboratory Download PDFInfo
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- CN216663292U CN216663292U CN202123396648.XU CN202123396648U CN216663292U CN 216663292 U CN216663292 U CN 216663292U CN 202123396648 U CN202123396648 U CN 202123396648U CN 216663292 U CN216663292 U CN 216663292U
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Abstract
The utility model relates to a single crystal growing device under the electric field condition for a laboratory, which comprises a sealing cover, a single crystal growing chamber, an arc-shaped negative and positive plate and a base, wherein the single crystal growing chamber comprises a main cavity body with a cylindrical center and an annular groove-shaped auxiliary cavity body at the periphery of the main cavity body; the center of the sealing cover is provided with a feeding port with a big top and a small bottom, the main cavity is filled with crystal growth stock solution, the auxiliary cavity is filled with a solvent which is easy to volatilize and separate out from the crystal in the solvent, the crystal is obtained by solvent diffusion, and the device can also be used for single crystal growth under the electric field condition of a plurality of methods such as a reaction crystallization method, a solvent evaporation method, a solvent conversion method and the like.
Description
Technical Field
The utility model relates to a single crystal growing device under the condition of an electric field for a laboratory.
Background
In the process of crystal growth, anions and cations or molecular groups can spontaneously gather to form crystals, under the normal condition, the positive charge centers and the negative charge centers of the crystals are crossed or the anions and the cations are arranged in a staggered mode, under most conditions, the obtained crystals are generally centrosymmetric, and under the action of an external field, the anions and the cations or the molecular groups can form ordered stacking according to the artificial field action, so that the crystals are induced to grow, crystals with special structures such as asymmetry and the like can be formed, and the crystal material has special photo-electromagnetic characteristics.
The existing literature reports the design and application of some devices that use the action of an electric field to control the relevant single crystal growth process, for example; installing an electrode plate on the side wall of the closed cover, wherein the electrode plate is used for crystallizing the copper sulfate solution in the container (CN 204395508U); the strong electric field generated by the electrode plates in the crystallization reactor solution can induce the protein solution to crystallize rapidly (CN 1867706A); the strong electric field generated by the parallel steel sheets on the upper part and the lower part of the polytetrafluoroethylene tank body is used for regulating and controlling the growth of hydrothermal nano or single crystal nonpolar materials (CN 108114678A); controlling the size of crystal particles by a relatively uniform electric field generated by a planar electrode plate which is parallel to the side wall of the reaction kettle and is inserted into the detection liquid (CN 109030303A); arranging an electric field generator at the top of the crystallization device to prepare a crystal solidification sample (CN 206428345U) under the action of an electric field; the devices are generally formed by modifying existing crystal growth equipment aiming at the growth of specific crystals, the structures are generally complex, some electrode plates are directly contacted with a growth liquid, the universality of the processes of reactive crystal growth, solvent transformation crystallization, solvent volatilization crystallization and the like which are common in the chemical experiment process is not strong, and a device which is simple in a laboratory and can realize the crystal growth under various methods is lacked.
Disclosure of Invention
Aiming at the problems, the utility model designs the single crystal growth device under the electric field condition for the laboratory, which can more conveniently induce the growth of the single crystal under various conditions.
In order to achieve the purpose, the utility model adopts the technical scheme that.
A single crystal growth device under the electric field condition for a laboratory is characterized by comprising a sealing cover, a single crystal growth chamber, an arc-shaped cathode plate, an arc-shaped anode plate and a base; the single crystal growth chamber comprises a main cavity body and an annular groove-shaped auxiliary cavity body, wherein the center of the main cavity body is cylindrical, the annular groove is formed in the periphery of the main cavity body, an annular convex groove is formed between the main cavity body and the auxiliary cavity body from the outer bottom of the main cavity body to the outer side of the main cavity body, the arc-shaped negative and positive plates are located in the annular convex groove, the single crystal growth chamber is symmetrically distributed in the periphery of the main cavity body and fixed on the base through a clamping groove, and a grinding opening in the upper portion of the outer wall of the auxiliary cavity body is matched with the sealing cover.
The ratio of the outer diameter of the auxiliary cavity of the single crystal growth chamber to the outer diameter of the main cavity of the single crystal growth chamber is 2: 1-4: 1, the ratio of the height of the outer wall of the auxiliary cavity of the single crystal growth chamber to the height of the outer wall of the main cavity of the single crystal growth chamber is 1.5: 1-2: 1, the outer wall of the auxiliary cavity of the single crystal growth chamber is a frosted opening, the upper portion of the outer wall of the auxiliary cavity is matched with the outer frosted opening of the sealing cover, the main cavity of the single crystal growth chamber is used for containing crystal growth raw liquid, and the auxiliary cavity of the single crystal growth chamber is used for containing volatile solvent which enters the solvent of the main cavity to precipitate crystals or containing drying agent which is used for absorbing the solvent of the main cavity to precipitate crystals.
The arc anode plate and the arc cathode plate can be made of graphite, silicon and carbon steel alloy, preferably graphite, the radian of the arc cathode plate and the arc anode plate is 40-60 degrees, and the height and the thickness of the arc cathode plate and the arc anode plate are matched with the annular convex groove between the main chamber and the auxiliary chamber.
The center of the sealing cover is provided with a feeding port with a big top and a small bottom, the upper part of the feeding port is designed as an inner grinding port, the lower part of the feeding port is designed as a smooth part, the radius ratio of the upper part to the lower part is 2.5: 1-3.0: 1, the height ratio of the upper part to the lower part is 1:1, the sealing cover can be used for sealing an opening at the upper part of the single crystal growth chamber, and the feeding port on the sealing cover can be used for adding a solvent or a reactant so as to realize direct crystallization in the reaction process and also can be directly sealed by using a grinding port plug; after the outer grinding opening of the sealing cover is matched with the inner grinding opening of the outer wall of the annular groove-shaped auxiliary cavity, the upper parts of the main cavity and the auxiliary cavity are communicated, and the diffusion of a solvent between the main cavity and the auxiliary cavity can be realized.
The electric field is provided by a voltage-adjustable direct current power supply, and the anode and the cathode of the power supply are respectively connected to the arc-shaped anode plate and the arc-shaped cathode plate.
A round electric heating plate matched with the outer diameter of a main cavity of the single crystal growing chamber can be placed on the base, a magnetic stirrer positioned in the vertical direction of the center of the single crystal growing chamber can be placed in the base, and crystal growth is regulated and controlled by adjusting temperature and controlling stirring speed.
The utility model has the beneficial effect.
The utility model has simple structure, convenient operation and convenient assembly and fixation.
The utility model has wide application range and can be used for the single crystal growth of various methods such as a reaction crystallization method, a solvent evaporation method, a solvent conversion method and the like.
Drawings
Fig. 1 is a schematic front view of a cross-sectional structure according to the present invention.
Fig. 2 is a front view full section assembly schematic of the present invention.
Fig. 3 is a sectional view a-a of fig. 2.
FIG. 4 is a diagram of an application example 1 of the present invention.
FIG. 1-closure; 2-a feed inlet; 3-a single crystal growth chamber; 4-a main cavity; 5-auxiliary cavity; 6-arc anode plate; 7-arc cathode plate; 8-base.
Detailed Description
The following detailed description of embodiments of the utility model refers to the accompanying drawings.
As shown in figure 1, a single crystal growth device under electric field condition for laboratory, including a sealing cover 1, a single crystal growth chamber 3, an arc anode plate 6, an arc cathode plate 7 and a base 8, the center of the sealing cover 1 has a charging opening 2 with a big end up, the single crystal growth chamber 3 includes a main cavity 4 and an auxiliary cavity 5, when in use, the arc anode plate 6 and the arc cathode plate 7 are fixed by a clamping groove on the base 8, the single crystal growth chamber 3 is placed in the middle of the base 7, the arc anode plate 6 and the arc cathode plate 7 are just embedded into a convex groove between the main cavity 4 of the single crystal growth chamber 3 and the auxiliary cavity 5 of the single crystal growth chamber 3, crystal growth stock solution is placed in the main cavity 4 in the single crystal growth chamber 3, volatile solvent which is insoluble or extremely low in the solution is placed in the auxiliary cavity 5, the upper grinding opening of the outer wall of the auxiliary cavity 5 is sealed by the sealing cover 1, providing environment for the growth of single crystal, connecting the arc anode plate 6 and the arc cathode plate 7 with the positive and negative poles of a voltage-adjustable direct current power supply respectively, generating an electric field in the main cavity 4 of the single crystal growth chamber 3, forming ordered accumulation by the directional movement of anions and cations or molecular groups in the crystal growth stock solution in the main cavity 4 under the action of the electric field, simultaneously leading the solvent in the auxiliary cavity 5 to enter the crystal growth stock solution in the main cavity 4 of the single crystal growth chamber 3 through volatilization, reducing the solubility of the crystal in the growth stock solution, further leading the crystal to be slowly separated out, disconnecting the power supply connected with the arc anode plate 6 and the arc cathode plate 7 after the crystal is not separated out, opening the sealing cover 1, taking the needed crystal out, taking the single crystal growth chamber 3 off from the base 8, cleaning and drying in vacuum.
Application example 1, as shown in fig. 4, firstly fixing an arc anode plate 6 and an arc cathode plate 7 through a clamping groove on a base 8, placing a single crystal growth chamber 3 in the middle of the base 8, enabling the arc anode plate 6 and the arc cathode plate 7 to be just embedded into a convex groove between a main cavity 4 of the single crystal growth chamber 3 and an auxiliary cavity 5 of the single crystal growth chamber 3, firstly adding one solution into the main cavity 4 of the single crystal growth chamber 3, adding the other solution into an injector, enabling the two solutions to react, enabling the resultant to be easily crystallized in an unsaturated solution, sealing the upper part of the outer wall of the auxiliary cavity 5 by a sealing cover 1 to provide an environment for single crystal growth, inserting the injector into a feeding port 2 on the sealing cover 1, respectively connecting the arc anode plate 6 and the arc cathode plate 7 with a positive electrode and a negative electrode of a voltage-adjustable direct-current power supply, slowly pushing a piston of the injector to enable the solution to be added into the single crystal growth chamber, under the action of an electric field, the anions or the molecular groups in the solution of the main cavity 4 move directionally to form ordered accumulation, after no crystal appears in the dripping process, the dripping process is stopped, the power supply connected with the arc anode plate 6 and the arc cathode plate 7 is disconnected, the sealing cover 1 is opened, and after the required crystal is taken out, the single crystal growth chamber 3 is taken down from the base 8, cleaned and dried in vacuum.
The application example 2 is that an arc anode plate 6 and an arc cathode plate 7 are fixed through a clamping groove on a base 8, a single crystal growth chamber 3 is placed in the middle of the base 8, the arc anode plate 6 and the arc cathode plate 7 are just embedded into a convex groove between a main cavity 4 of the single crystal growth chamber 3 and an auxiliary cavity 5 of the single crystal growth chamber 3, potassium trialkonate is dissolved in the main cavity 4 in the single crystal growth chamber 3, ethanol is placed in the auxiliary cavity 5, and a grinding opening in the upper portion of the outer wall of the auxiliary cavity 5 is sealed by a sealing cover 1, so that an environment is provided for single crystal growth. Then the arc anode plate 6 and the arc cathode plate 7 are respectively connected with the anode and the cathode of a voltage-adjustable direct current power supply, an electric field is generated in the main cavity 4 of the single crystal growth chamber 3, under the action of the electric field, the negative ions in the main cavity 4 or the negative ions or the molecular groups in the potassium triaxalate solution move directionally to form ordered accumulation, simultaneously, the ethanol in the auxiliary cavity 5 enters the potassium triaxalate solution in the main cavity 4 of the single crystal growth chamber 3 through volatilization, the solubility of the potassium triaxalate solution in the solution is reduced, further, the potassium triaxalate solution is slowly separated out, the standing is carried out, after the crystals are not separated out, the power supply connected with the arc anode plate 6 and the arc cathode plate 7 is disconnected, the sealing cover 1 is opened, the crystals are taken out, the single crystal growth chamber 3 is taken down from the base 8, and the crystals are cleaned and dried in vacuum.
Application example 3, firstly fixing an arc anode plate 6 and an arc cathode plate 7 through a clamping groove on a base 8, placing a single crystal growth chamber 3 in the middle of the base 8, enabling the arc anode plate 6 and the arc cathode plate 7 to be just embedded into a convex groove between a main cavity 4 of the single crystal growth chamber 3 and an auxiliary cavity 5 of the single crystal growth chamber 3, adding supersaturated solution of a compound into the main cavity 4 in the single crystal growth chamber 3, adding a drying agent such as quicklime, phosphorus pentoxide, silica gel and the like into the auxiliary cavity 5, sealing a grinding opening on the upper part of the outer wall of the auxiliary cavity 5 by using a sealing cover 1, respectively connecting the arc anode plate 6 and the arc cathode plate 7 with a positive electrode and a negative electrode of a voltage-adjustable direct current power supply, generating an electric field in the main cavity 4 of the single crystal growth chamber 3, directionally moving anions and anions or molecular groups in crystal growth stock solution in the main cavity 4 to form ordered accumulation under the action of the electric field, and simultaneously absorbing vapor generated by volatilization of the solution in the main cavity 4 by the drying agent in the auxiliary cavity 5, unsaturated so that the supersaturated solution gradually changes, and the crystals are slowly separated out, after the crystals are not separated out, the power supply connected with the arc anode plate 6 and the arc cathode plate 7 is disconnected, the sealing cover 1 is opened, and after the crystals are taken out, the single crystal growth chamber 3 is taken down from the base 8, cleaned and dried in vacuum.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, the scope of the present invention is not limited thereto, and the technology of the present invention is not limited thereto.
Claims (5)
1. A single crystal growth device under the electric field condition for a laboratory is characterized by comprising a sealing cover, a single crystal growth chamber, an arc-shaped cathode plate, an arc-shaped anode plate and a base; the single crystal growth chamber include that the center is columniform main cavity body and at the vice cavity of main cavity body outlying ring channel form, upwards form the annular tongue from outer bottom between main cavity chamber and the vice cavity, arc negative and positive plate is arranged in the annular tongue, and symmetric distribution is in single crystal growth chamber main cavity body peripherally to fix on the base through the draw-in groove, vice cavity outer wall upper portion ground mouthful and closing cap phase-match.
2. The apparatus for growing single crystal under electric field conditions for laboratories as claimed in claim 1, wherein the ratio of the outer diameter of the auxiliary chamber of the growth chamber to the inner diameter of the main chamber of the growth chamber is 2:1 to 4:1, the ratio of the height of the outer wall of the auxiliary chamber of the growth chamber to the wall of the main chamber of the growth chamber is 1.5:1 to 2:1, and the outer wall of the auxiliary chamber of the growth chamber is a frosted inner grinding port matching with the outer grinding port of the sealing cover.
3. The single crystal growth apparatus under electric field conditions for laboratories as claimed in claim 1, wherein the arc anode plate and the arc cathode plate are made of graphite, silicon or carbon steel alloy, the arc degree of the arc anode and cathode plate is 40-60 °, and the height and thickness of the arc anode and cathode plate are matched with the annular convex groove between the main cavity and the auxiliary cavity.
4. The apparatus for single crystal growth under electric field conditions for a laboratory according to claim 1, wherein the cap has a feed opening with a large top and a small bottom at the center, the feed opening has an upper portion with an inner mill opening design and a lower portion with a smooth design, the ratio of the radius of the upper portion to the radius of the lower portion of the feed opening is 2.5:1 to 3.0:1, and the ratio of the height of the upper portion to the height of the lower portion is 1: 1.
5. A laboratory single crystal growth apparatus under electric field conditions as defined in claim 1, wherein said electric field is provided by a voltage-adjustable dc power supply, and the positive and negative poles of said power supply are connected to said curved positive and negative plates, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123396648.XU CN216663292U (en) | 2021-12-31 | 2021-12-31 | Single crystal growth device under electric field condition for laboratory |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123396648.XU CN216663292U (en) | 2021-12-31 | 2021-12-31 | Single crystal growth device under electric field condition for laboratory |
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| CN216663292U true CN216663292U (en) | 2022-06-03 |
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| CN202123396648.XU Active CN216663292U (en) | 2021-12-31 | 2021-12-31 | Single crystal growth device under electric field condition for laboratory |
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2021
- 2021-12-31 CN CN202123396648.XU patent/CN216663292U/en active Active
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