CN102431964B - Method for controllable generation of quantum dots or quantum wires - Google Patents
Method for controllable generation of quantum dots or quantum wires Download PDFInfo
- Publication number
- CN102431964B CN102431964B CN201110421304.1A CN201110421304A CN102431964B CN 102431964 B CN102431964 B CN 102431964B CN 201110421304 A CN201110421304 A CN 201110421304A CN 102431964 B CN102431964 B CN 102431964B
- Authority
- CN
- China
- Prior art keywords
- quantum
- electrode
- quantum dot
- substrate
- quantum wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses a method for controllable generation of quantum dots or quantum wires, which belongs to the field of preparation of low-dimensional quantum materials. The method comprises the following steps: arranging a substrate for growing the quantum dots or the quantum wires in solution with dissolved the quantum dots or the quantum wires and arranging an electrode which is in contact with the lower surface of the substrate on the bottom surface of the substrate; applying voltage between the solution and the electrode for forming a steady electric field so as to enable quantum dot or quantum wire material in the solution to settle in the position where the electrode is located on the substrate under the action of electric field force of the steady electric field and grow the quantum dots or the quantum wires on the substrate in the position corresponding to the electrode; and adjusting the position of the electrode to control the growth positions of the quantum dots or the quantum wires on the substrate. The method is simple to operate and good in controllable effect; and according to the method disclosed by the invention, controllable growth in any quantum dot or quantum wire position can be realized, and a foundation is laid for processing and manufacturing of quantum devices.
Description
Technical field
The present invention relates to quantum dot or quantum wire field of material preparation, relate in particular to the method for the controlled growth quantum point in a kind of position or quantum wire.
Background technology
During yardstick 1～20 nanometer of nano particle or nano wire because quantum effect is obvious, in physics also referred to as quantum dot or quantum wire.Quantum dot or quantum wire array are listed in the fields such as area source, display, solar cell, information storage application prospect very widely.The positioning of quantum dot and quantum wire is for the preparation of quantum device has been formed to a bottleneck difficult problem, and the application of quantum device is more extensive, as quantum computer, biochip, nanometer robot etc.
Existing while preparing quantum dot or quantum wire material, in most of method, quantum dot or quantum wire position are uncontrollable at random.Template and photoengraving method are controlled in position to the preparation of quantum dot or quantum wire, but the preparation of template is uncontrollable, and photoengraving is larger on the quantum effect impact of quantum dot or quantum wire.Content that person exploring that the preparation of the quantum dot of controllable position or quantum linear array is nano materials research, to a small amount of number quantum dot with need the preparation of the quantum wire of shape to remain a difficulty, accurate located growth is a generally acknowledged difficult problem especially.
Summary of the invention
Embodiment of the present invention provides a kind of method of controlled manufacturing quantum dot or quantum wire, can solve the method for preparing at present quantum dot or quantum wire material and exist uncontrollablely to quantum dot or quantum wire, the quantum dot making or quantum wire material cannot meet the requirement of some application-specific from aspects such as performance, application.
Solving the problems of the technologies described above adopted technical scheme is:
Embodiment of the present invention provides a kind of method of controlled manufacturing quantum dot or quantum wire, and the method comprises:
The substrate of growth quantum point or quantum wire is set in the solution that is dissolved with quantum dot or quantum wire material, the electrode contacting with substrate lower surface is set in described substrate bottom surface;
Between described solution and described electrode, apply voltage and form steady electric field, make the position sedimentation to the electrode place on described substrate under the effect of the electric field force of described steady electric field of quantum dot in solution or quantum wire material, at Grown quantum dot or the quantum wire of described electrode institute correspondence position;
Adjust Position Control quantum dot or the growth position of quantum wire on substrate of described electrode.
In said method, described method further comprises:
Be adjusted between described solution and described electrode and execute alive size, control the size of quantum dot or the thickness of quantum wire.
In said method, described setting in described solution between plate electrode and described electrode applies adjustable voltage.
Plate electrode is set in solution and is connected with the positive pole of power supply, electrode is connected with the negative pole of described power supply.
In said method, it is 0.1V～60V that the voltage applying between plate electrode and described electrode is set in described solution.
In said method, the substrate that the non-conducting material that described substrate adopts thickness to be less than millimeter magnitude is made.
In said method, described electrode adopts metal probe or metal blade.
In said method, described metal probe adopts the metal probe that tip is sharp-pointed taper.
In said method, described metal probe or metal blade can be for a plurality of.
By the above-mentioned technical scheme providing, can be found out, in the method that embodiment of the present invention provides, by applying voltage between the solution at growth quantum point or quantum wire material and electrode, form steady electric field, make quantum dot in solution or quantum wire material at the electric field force of steady electric field the Grown to electrode position, thereby can by electric field induce substrate need position growth quantum point or quantum wire, reach the controlled object of preparing quantum dot or quantum wire.The method is simple to operate, controlled effective, can realize the controllable growth of arbitrarily quantum point or quantum wire position, for the processing and manufacturing of quantum device lays the foundation.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain other accompanying drawings according to these accompanying drawings.
The schematic diagram of the method for the controllable growth quantum dot that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 is the schematic diagram of embodiment of the present invention controllable growth quantum dot or quantum wire;
The controllable growth quantum dot that Fig. 3 provides for the embodiment of the present invention or the system schematic of quantum wire;
The component names that in figure, each label is corresponding is: the container of 1-dress solution; 2-substrate; 3-quantum dot; 4-metal probe; 5-negative pole; 6-is anodal; 7-power supply; 8-heating wire; Row's solution mouth on 9-container; 10-temperature control system.
The specific embodiment
Below in conjunction with specific embodiment, the technical scheme in the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on embodiments of the invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to protection scope of the present invention.
Below the embodiment of the present invention is described in further detail.
The embodiment of the present invention provides a kind of method of controlled manufacturing quantum dot or quantum wire, and as shown in Figure 1, 2, the method comprises:
In the solution that is dissolved with quantum dot or quantum wire material, be provided for the non-conductive substrate of growth quantum point or quantum wire, electrode (metal probe or metal blade) is set on substrate bottom surface, electrode (metal probe or metal blade) is contacted with substrate lower surface;
Plate electrode (being connected with positive source) is set in solution, at the upper negative pole (being connected with the negative pole of power supply) that connects of electrode (metal probe or metal blade), to positive and negative electrode, apply voltage (voltage is adjustable voltage) and form steady electric field, charged after making quantum dot in solution or quantum wire material synthetic, synthetic quantum dot or quantum wire material with particle form to sedimentation manufacturing quantum dot or quantum wire on the substrate of electrode (metal probe or metal blade) position; The position of adjusting electrode (metal probe or metal blade) can be controlled in the position of quantum dot or the quantum wire of Grown.In reality, the quantum dot of growth or position and the shape of quantum wire are controlled in the position of capable of regulating electrode (metal probe or metal blade), shape, and the size of quantum dot and the thickness of quantum wire can be determined by the voltage of electrode (metal probe or metal blade).
Electrode (metal probe or metal blade) can adopt sharp-pointed metal probe and metal blade, and metal probe can be a plurality of, and arrangement can be determined as required, metal probe and substrate contact, and substrate is got over Bao Yuehao, is limited in and is less than below millimeter.Metal blade position, shape and quantity are also set as required.Electrode voltage can be controlled in 0.1～60 volt, can need to determine according to quantum dot or quantum wire size, and preferred voltage is controlled at 0.1～10V.In reality, can adopt the system shown in Fig. 3 to carry out controllable growth quantum dot or quantum wire, after quantum dot or quantum wire generation, solution is slowly discharged from leakage fluid dram, when liquid levels is neighbouring to substrate top surface, close leakage fluid dram, by temperature control system heated substrate, remaining liq is volatilized by thermolysis process, and temperature is at 30 ℃～50 ℃ (being shown in Fig. 3).Finally growth to be had to the substrate of quantum dot or quantum wire by heat treatment, improve the adhesive strength of quantum dot or quantum wire.The method is simple to operate, controlled effective, thereby the quantum wire material that makes to prepare can meet the needs of multiple specific occasion, can realize the controllable growth of arbitrarily quantum point or quantum wire position, for the processing and manufacturing of quantum device lays the foundation.
The above; be only the present invention's specific embodiment preferably, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (7)
1. a method for controlled manufacturing quantum dot or quantum wire, is characterized in that, the method comprises:
The substrate of growth quantum point or quantum wire is set in the solution that is dissolved with quantum dot or quantum wire material, the electrode contacting with substrate lower surface is set in described substrate bottom surface; The substrate that the non-conducting material that described substrate adopts thickness to be less than millimeter magnitude is made;
Between described solution and described electrode, apply voltage and form steady electric field, make the position sedimentation to the electrode place on described substrate under the effect of the electric field force of described steady electric field of quantum dot in solution or quantum wire material, at Grown quantum dot or the quantum wire of described electrode institute correspondence position;
Adjust Position Control quantum dot or the growth position of quantum wire on substrate of described electrode.
2. the method for controlled manufacturing quantum dot according to claim 1 or quantum wire, is characterized in that, described method further comprises:
Be adjusted between described solution and described electrode and execute alive size, control the size of quantum dot or the thickness of quantum wire.
3. the method for controlled manufacturing quantum dot according to claim 1 and 2 or quantum wire, it is characterized in that, between described solution and described electrode, applying voltage is: in described solution, plate electrode is set, between described plate electrode and described electrode, applies adjustable voltage;
The plate electrode arranging in described solution is connected with the positive pole of power supply, and described electrode is connected with the negative pole of described power supply.
4. the method for controlled manufacturing quantum dot according to claim 3 or quantum wire, is characterized in that, the adjustable voltage applying between the described plate electrode arranging in described solution and described electrode is 0.1V～60V.
5. the method for controlled manufacturing quantum dot according to claim 1 or quantum wire, is characterized in that, described electrode adopts metal probe or metal blade.
6. the method for controlled manufacturing quantum dot according to claim 5 or quantum wire, is characterized in that, described metal probe adopts the metal probe that tip is sharp-pointed taper.
7. the method for controlled manufacturing quantum dot according to claim 5 or quantum wire, is characterized in that, described metal probe or metal blade are a plurality of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110421304.1A CN102431964B (en) | 2011-12-15 | 2011-12-15 | Method for controllable generation of quantum dots or quantum wires |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110421304.1A CN102431964B (en) | 2011-12-15 | 2011-12-15 | Method for controllable generation of quantum dots or quantum wires |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102431964A CN102431964A (en) | 2012-05-02 |
| CN102431964B true CN102431964B (en) | 2014-08-13 |
Family
ID=45980378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110421304.1A Expired - Fee Related CN102431964B (en) | 2011-12-15 | 2011-12-15 | Method for controllable generation of quantum dots or quantum wires |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102431964B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105068312B (en) | 2015-08-06 | 2019-01-25 | 青岛海信电器股份有限公司 | Light conversion film and preparation method thereof, liquid crystal display die set |
| CN105668512B (en) * | 2016-01-11 | 2017-07-07 | 江苏师范大学 | A kind of method for assembling nano electron device |
| CN107790736B (en) * | 2017-10-25 | 2020-02-14 | 江汉大学 | Preparation method of self-catalytic nano quantum wire |
| CN112447916B (en) | 2019-09-04 | 2022-04-01 | Tcl华星光电技术有限公司 | Preparation method of quantum dot film |
| CN112542536B (en) | 2019-09-04 | 2024-02-27 | Tcl华星光电技术有限公司 | Manufacturing method of display panel |
| CN111427111A (en) * | 2020-03-30 | 2020-07-17 | Tcl华星光电技术有限公司 | Quantum dot patterning method, device and system |
| US11377723B2 (en) | 2020-03-30 | 2022-07-05 | Tcl China Star Optoelectronics Technology Co., Ltd. | Method of patterning quantum dots, device using same, and system thereof |
| CN112916226A (en) * | 2021-01-25 | 2021-06-08 | 中国计量大学 | Method and device for generating quantum dots and material prepared by using device |
| CN113359347B (en) * | 2021-05-28 | 2022-12-23 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot deposition device |
| CN113745440B (en) * | 2021-08-17 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of quantum dot device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1579932A (en) * | 2003-08-12 | 2005-02-16 | 刘键 | Preparation of nano graphite carbon colloidal SOL by pulse electrode process |
| CN1617954A (en) * | 2001-11-30 | 2005-05-18 | 北卡罗来纳-查佩尔山大学 | Deposition method for nanostructure materials |
| CN1646734A (en) * | 2002-04-16 | 2005-07-27 | 摩托罗拉公司 | Selectively aligning nanometer-scale components using AC fields |
| CN1649094A (en) * | 2004-12-28 | 2005-08-03 | 东南大学 | External electric field induced orientation sedimentation method for preparing nano gap |
| KR20050122299A (en) * | 2004-06-24 | 2005-12-29 | 한국기계연구원 | Patterning of nano material using dielectrophoresis |
| CN1715181A (en) * | 2004-06-30 | 2006-01-04 | 北京大学 | Method for controlling carbon nano tube oriented arranging, distribution and density |
| CN1871378A (en) * | 2003-07-10 | 2006-11-29 | 北卡罗来纳-查佩尔山大学 | Deposition method for nanostructure materials |
-
2011
- 2011-12-15 CN CN201110421304.1A patent/CN102431964B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1617954A (en) * | 2001-11-30 | 2005-05-18 | 北卡罗来纳-查佩尔山大学 | Deposition method for nanostructure materials |
| CN1646734A (en) * | 2002-04-16 | 2005-07-27 | 摩托罗拉公司 | Selectively aligning nanometer-scale components using AC fields |
| CN1871378A (en) * | 2003-07-10 | 2006-11-29 | 北卡罗来纳-查佩尔山大学 | Deposition method for nanostructure materials |
| CN1579932A (en) * | 2003-08-12 | 2005-02-16 | 刘键 | Preparation of nano graphite carbon colloidal SOL by pulse electrode process |
| KR20050122299A (en) * | 2004-06-24 | 2005-12-29 | 한국기계연구원 | Patterning of nano material using dielectrophoresis |
| CN1715181A (en) * | 2004-06-30 | 2006-01-04 | 北京大学 | Method for controlling carbon nano tube oriented arranging, distribution and density |
| CN1649094A (en) * | 2004-12-28 | 2005-08-03 | 东南大学 | External electric field induced orientation sedimentation method for preparing nano gap |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102431964A (en) | 2012-05-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102431964B (en) | Method for controllable generation of quantum dots or quantum wires | |
| CN101348931A (en) | Method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition | |
| CN104030238A (en) | Preparation method for realizing graphical ZnO nanowire arrays by micro-contact printing | |
| CN110385850A (en) | The method of electrohydrodynamics spray printing Arbitrary 3 D flexible electronic circuit pattern | |
| CN104671277B (en) | Method for preparing zinc oxide composite material with high specific surface area and zinc oxide composite material | |
| CN202369388U (en) | Device controlled to generate quantum dots or quantum lines | |
| CN103456521A (en) | Method for preparing cobaltous hydroxide/bismuth sulfide composite nanowire electrode material of super-capacitor | |
| TW201720759A (en) | Perovskite donor layer applied to active layer of thin-film solar cell and method for manufacturing the same | |
| CN103074680B (en) | Preparation method for hafnium two-dimensional atomic crystal material | |
| CN102061498B (en) | Preparation method of injector-shaped ZnO nanostructural array for field emission | |
| CN102330058B (en) | Method for preparing multi-grade antimonytelluride nano wire harness array by adopting physical vapor deposition | |
| CN109468668A (en) | A kind of preparation method and applications of platinum nano-cone array structure | |
| CN202440520U (en) | Cell culture dish suitable for additional electrical stimulation | |
| CN105036326B (en) | A kind of preparation method of the active bio membrane electrode with Direct electron transfer mechanism | |
| CN105415868B (en) | A kind of solar cell grid line perseverance angle printing process and device | |
| CN108046210A (en) | A kind of bionical micro-nano robot preparation method of magnetism | |
| CN107604408B (en) | A kind of bismuth ferrite thin film and preparation method thereof | |
| CN108069389B (en) | Preparation method of magnetic control directional fast moving micro-nano robot | |
| RU2488629C1 (en) | Device for electric stimulation of cells | |
| CN101434904A (en) | Cell electrofusion chip and method for manufacturing the same | |
| CN104164696A (en) | Preparation apparatus for microelectrode needle dust | |
| CN202369387U (en) | Equipment for preparing parallel substrate nano wire arrays | |
| CN205790074U (en) | A kind of compacted zone uniform planar structure perovskite solaode | |
| CN103525700A (en) | Rotational shear force stimulation and electric stimulation combined cell culture device | |
| CN216663292U (en) | Single crystal growth device under electric field condition for laboratory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140813 Termination date: 20211215 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |