CN210467864U - Preparation equipment for CIGS thin film battery buffer layer - Google Patents
Preparation equipment for CIGS thin film battery buffer layer Download PDFInfo
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- CN210467864U CN210467864U CN201920990570.8U CN201920990570U CN210467864U CN 210467864 U CN210467864 U CN 210467864U CN 201920990570 U CN201920990570 U CN 201920990570U CN 210467864 U CN210467864 U CN 210467864U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model relates to a photovoltaic equipment makes technical field, concretely relates to preparation equipment for CIGS thin film battery buffer layer. The embodiment of the utility model provides a preparation equipment for CIGS thin film battery buffer layer includes thermostatic waterbath device, fixing device, stirring magneton, magnetic stirrers, sealed lid and reaction vessel, form one end open-ended and hold the chamber in the reaction vessel, sealed lid closes the open end and seals hold the chamber, can avoid holding the volatilization of intracavity reaction liquid; in addition, the fixing device is arranged in the accommodating cavity to fix the substrate, so that the substrate is more firmly fixed, and the problem of uneven coating caused by the substrate shaking in the reaction liquid can be solved.
Description
Technical Field
The utility model relates to a thin film battery makes technical field, concretely relates to preparation equipment for CIGS thin film battery buffer layer.
Background
The CIGS thin-film solar cell has the characteristics of low production cost, small pollution, no decline, good low-light performance and the like, the photoelectric conversion efficiency is at the beginning of various thin-film solar cells and is close to that of a crystalline silicon solar cell, the cost is one third of that of the crystalline silicon solar cell, and the CIGS thin-film solar cell is internationally called as a novel thin-film solar cell which is very promising in the next generation.
The basic structure of the CIGS thin-film solar cell consists of a substrate, a back electrode layer, an absorption layer, a buffer layer, a window layer, an antireflection layer and an electrode layer. The most commonly used buffer layer material at present is CdS (cadmium sulfide), and the preparation method mainly comprises a physical method and a chemical method. Physical methods include molecular beam epitaxy, sputtering, vacuum evaporation, metal organic chemical vapor deposition, and the like; the physical preparation methods use expensive equipment, have high requirements on the purity of raw materials, and require high-temperature or high-vacuum conditions; the chemical method mainly comprises a chemical water bath method, and the chemical water bath deposition method has the advantages of high efficiency, low cost and the like and is widely applied to CdS preparation experiments.
In the experiment for preparing the small-area CdS film by the existing chemical water bath method, a substrate is directly placed in an open reaction container, the substrate can shake in reaction liquid along with large-amplitude magnetic stirring in the reaction process, and the reaction liquid in the reaction container can be greatly volatilized to cause uneven film coating; in addition, the magnetic stirring frequency is too low, so that the large-particle CdS on the sample cannot be removed, and the sample result is poor.
SUMMERY OF THE UTILITY MODEL
The utility model discloses (one) the technical problem that solve is: the existing experiment for preparing the small-area CdS film by the chemical water bath method has the problems that a substrate shakes in a reaction container, and a reaction solution is volatilized in a large quantity.
(II) technical scheme
In order to solve the technical problem, an embodiment of the present invention provides a preparation apparatus for a CIGS thin-film battery buffer layer, which includes a constant temperature water bath device, a fixing device, a stirring magnet, a magnetic stirrer, a sealing cover and a reaction container, wherein the reaction container is placed in the constant temperature water bath device, a containing cavity with an open end is formed in the reaction container, and the sealing cover covers the open end of the containing cavity to seal the containing cavity;
the fixing device and the stirring magnetons are both positioned in the accommodating cavity, and the fixing device is used for fixing a substrate of the CIGS thin film battery; the magnetic stirrer is positioned outside the containing cavity and used for driving the stirring magnetons to rotate.
According to the utility model discloses an embodiment, fixing device includes the body, be equipped with the fixed orifices on the body, the fixed orifices is used for fixing the substrate.
According to an embodiment of the present invention, the body bag comprises upright columns arranged side by side and spaced from each other, the upright columns are provided with through holes penetrating through the upright columns, and the axes of the through holes are perpendicular to the axes of the upright columns;
and through holes positioned on the same plane on the plurality of upright posts form the fixing holes.
According to the utility model discloses an embodiment, fixing device includes at least one fixed block, the upper end of fixed block with sealed lid links to each other, and the lower extreme is equipped with and is used for the installation the mounting groove of substrate, be equipped with the screw on the lateral wall of mounting groove.
According to the utility model discloses an embodiment, the fixed block is equipped with a plurality ofly, and is a plurality of the fixed block is parallel to each other and the interval is arranged.
According to the utility model discloses an embodiment, the fixed block is round platform form, the axis of fixed block with reaction vessel's axis is parallel.
According to the utility model discloses an embodiment, sealed be equipped with hold the inlet that the chamber communicates.
According to the utility model discloses an embodiment still includes the pH thermometer, the sense terminal of pH thermometer passes sealed hole on the lid stretches into hold the intracavity, the pH thermometer with the sealed cooperation of via hole.
According to an embodiment of the utility model, the water bath with thermostatic control device is the water bath with ultrasonic wave constant temperature.
According to an embodiment of the present invention, the stirring magnetons and the magnetic stirrer are located at opposite sides of the bottom wall of the reaction vessel, and the stirring magnetons are placed on the bottom wall of the reaction vessel.
The utility model has the advantages that: the embodiment of the utility model provides a preparation equipment for CIGS thin-film battery buffer layer, including thermostatic waterbath device, fixing device, stirring magneton, magnetic stirrers, sealed lid and reaction vessel, form one end open-ended and hold the chamber in the reaction vessel, sealed lid closes at the open end and seals hold the chamber, can avoid holding the volatilization of intracavity reaction solution; in addition, the fixing device is arranged in the accommodating cavity to fix the substrate, so that the substrate is more firmly fixed, and the problem of uneven coating caused by the substrate shaking in the reaction liquid can be solved.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic diagram of an apparatus for preparing a buffer layer of a CIGS thin film cell according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a fabrication apparatus for a CIGS thin film cell buffer layer according to another embodiment of the present disclosure.
Wherein the corresponding relations between the reference numbers and the names of the components in fig. 1 and 2 are as follows:
1. the constant-temperature water bath device comprises a constant-temperature water bath device 2, a reaction container 21, a containing cavity 22, a stirring magnet 23, a stand column 24, a fixing block 3, a sealing cover 31, a liquid inlet 4, a pH thermometer 5, a magnetic stirrer 6 and a substrate.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
As shown in fig. 1 and fig. 2, the embodiment of the present invention provides a preparation apparatus for a CIGS thin-film battery buffer layer, including a constant temperature water bath device 1, a fixing device, a stirring magnet 22, a magnetic stirrer 5, a sealing cover 3 and a reaction container 2, where the reaction container 2 is placed in the constant temperature water bath device 1, a containing cavity 21 with an open end is formed in the reaction container 2, and the sealing cover 3 covers the open end of the containing cavity 21 to seal the containing cavity 21; the fixing device and the stirring magneton 22 are both positioned in the containing cavity 21, and the fixing device is used for fixing the substrate 6 of the CIGS thin film battery; the magnetic stirrer 5 is located outside the accommodating cavity 21 and is used for driving the stirring magnet 22 to rotate.
The embodiment of the utility model provides a preparation equipment for CIGS thin film battery buffer layer, including thermostatic waterbath device 1, fixing device, stirring magneton 22, magnetic stirrers 5, sealed lid 3 and reaction vessel 2; the reaction vessel 2 is fixed in the constant-temperature water bath device 1, a containing cavity 21 with an opening at one end is formed in the reaction vessel 2, reaction liquid is filled in the containing cavity 21, the constant-temperature water bath device 1 heats the reaction vessel 2 at constant temperature, the reaction liquid adopts cadmium acetate, thiourea, ammonia water and ammonium acetate, the reaction liquid is subjected to chemical reaction in a heating state, a CdS film is deposited on the substrate 6, and the open reaction vessel 2 can cause volatilization of a large amount of ammonia water due to strong volatility of the ammonia water, so that waste of raw materials is caused, and uneven film coating is also caused; in this embodiment, the open end of the reaction vessel 2 is covered with the sealing cover 3, and the volatilization of the reaction solution can be reduced or even eliminated by the sealing cover 3, so that the raw material cost is saved, and the uniformity of the coating film is improved. In addition, the fixing device for fixing the substrate 6 is arranged in the reaction vessel 2, so that the substrate 6 is more firmly fixed, and the problem of uneven coating caused by the substrate 6 shaking in the reaction liquid can be solved; the magnetic stirrer 5 can drive the stirring magneton 22 to rotate in the reaction vessel 2, so that the reaction liquid in the reaction vessel 2 is uniformly stirred, and the uniformity of the coating film can be improved.
According to the utility model discloses an embodiment, as shown in fig. 1, fixing device includes the body, be equipped with the fixed orifices on the body, the fixed orifices is used for fixing substrate 6 passes the fixed orifices with the edge of substrate 6 in order to fix substrate 6, can avoid substrate 6 to mix the problem that the in-process appears rocking by a wide margin at the reaction liquid like this, can avoid because of substrate 6 rocks the inhomogeneous condition of low surface coating film when leading to.
According to an embodiment of the present invention, as shown in fig. 1, the body includes at least two columns 23, each column 23 has a through hole therethrough, the through hole may be a square hole, the width of the through hole is slightly larger than the width of the substrate 6, the extending direction of the through hole is perpendicular to the axis of the column 23, the through holes on the columns 23 located on the same plane constitute the fixing hole; for example, the column 23 is provided with two columns, the through holes are formed in the two columns 23 at corresponding heights, the through holes in the two columns 23 are arranged oppositely, the two ends of the substrate 6 penetrate through the through holes in the two columns 23 respectively, the substrate 6 is supported through the columns 23, and the position of the substrate 6 is fixed through the through holes, so that the substrate 6 can be prevented from shaking along with the stirring of the reaction liquid, and the stability of the substrate 6 placed in the reaction container 2 is improved. When the upright columns 23 are provided with a plurality of upright columns, the substrate 6 sequentially passes through the through holes on the same plane on the upright columns 23, if three upright columns 23 are arranged, the middle part of the substrate 6 of the middle upright column 23 is supported and limited, the substrate 6 is more firmly supported, and the limiting effect is better.
Preferably, as shown in fig. 1, each of the columns 23 is provided with a plurality of through holes from top to bottom, so that a plurality of groups of fixing holes can be formed between the plurality of columns 23, and each group of fixing holes can fix one substrate 6, so that a coating experiment can be performed on a plurality of groups of substrates 6 at the same time. Wherein in the present embodiment the fixing holes extend in a horizontal direction, i.e. the substrate 6 is placed horizontally in the fixing holes.
As shown in fig. 1 and 2, a liquid inlet 31 communicated with the accommodating cavity 21 is formed in the sealing cover 3, ammonia water can be dripped into the accommodating cavity 21 through the liquid inlet 31, and the pH value of the reaction liquid in the accommodating cavity 21 is finely adjusted; the open end of holding chamber 21 is closed in the lid 3 lid of sealed, can prevent to hold the interior reaction liquid such as aqueous ammonia of chamber 21 and volatilize, simultaneously because sealed lid 3 can seal and hold chamber 21, can also play the heat retaining effect to reaction vessel 2. Meanwhile, the sealing cover 3 is an openable cover at the opening end of the reaction vessel 2, so that when the reaction liquid is added into the reaction vessel 2, the sealing cover 3 can be opened to quickly add the reaction liquid, and when the CdS film is deposited by a chemical water bath method, the sealing cover 3 is covered at the opening end of the reaction vessel 2 to seal the reaction vessel 2.
As shown in fig. 1, the preparation apparatus for the CIGS thin-film battery buffer layer provided in this embodiment further includes a pH thermometer 4, a detection end of the pH thermometer 4 penetrates through a via hole on the sealing cover 3 and extends into the accommodating cavity 21, the pH thermometer 4 is in sealing fit with the via hole, the pH thermometer 4 can monitor the pH value and the temperature in the reaction container 2 in real time, then ammonia water is added into the reaction container 2 through the liquid inlet 31, the pH value of the reaction liquid is finely adjusted, the temperature in the reaction container is adjusted by adjusting the constant-temperature water bath device, and it is ensured that the CdS thin film is deposited in a suitable reaction environment.
In one embodiment of the present application, the reaction vessel 2 is placed in a thermostatic waterbath apparatus 1, and the thermostatic waterbath apparatus 1 is used for controlling the temperature in the reaction vessel 2; preferably, the thermostatic water bath device 1 is an ultrasonic thermostatic water bath, and the ultrasonic thermostatic water bath can be used for controlling the temperature of the reaction liquid in the reaction vessel 2 and cleaning large particles and clusters on the surface of the sample, so that the prepared sample particles are uniform and firmly attached. The thermostatic waterbath device 1 is an existing product, and the specific structure thereof is not described herein again.
As shown in fig. 1, the stirring magneton 22 and the magnetic stirrer 5 are located on two opposite sides of the bottom wall of the reaction vessel 2, the stirring magneton 22 is placed on the bottom wall of the reaction vessel 2, the magnetic stirrer 5 is located outside the reaction vessel 2, and the magnetic stirrer 5 is a laboratory instrument for liquid mixing, and is mainly used for stirring a liquid with a low viscosity or a solid-liquid mixture. Magnetic stirrers 5 utilizes the principle that like poles repel each other, opposite poles attract in magnetic field, uses magnetic field to promote the stirring magneton 22 of placing in the container and carries out the circumference operation to reach the purpose of stirring liquid, and the cooperation heating temperature control system can heat and control the sample temperature according to specific experimental requirement, maintains the required temperature condition of experimental condition, guarantees that liquid mixes and reaches the experiment demand.
The stirring magneton 22 that is located reaction vessel 2 is driven to rotate through magnetic stirrer 5 in this application, and the reaction liquid in reaction vessel 2 is stirred evenly.
According to another embodiment of the present invention, as shown in fig. 2, the fixing device comprises at least one fixing block 24, the upper end of the fixing block 24 is connected to the sealing cover 3, the lower end is provided with a mounting groove for mounting the substrate 6, and the side wall of the mounting groove is provided with a screw hole; insert the mounting groove in substrate 6's the upper end, then in screwing the bolt into the screw, get into the mounting groove and extrude substrate 6 until the tip of bolt, the bolt tip extrudes substrate 6 on the inner wall of mounting groove, and then fixes substrate 6, can avoid substrate 6 to rock along with reaction solution's stirring by a wide margin, improves the fixed stability of substrate 6 to reach and improve and rock because of substrate 6 in the reaction solution and cause the inhomogeneous problem of coating film.
As shown in fig. 2, the fixed block 24 is provided with a plurality of fixed blocks 24, the fixed blocks 24 are arranged in parallel and at intervals, and each fixed block 24 can fix one substrate 6; the fixed block 24 is in a circular truncated cone shape, and the axis of the fixed block 24 is parallel to the axis of the reaction container 2; the upper end of the substrate 6 is fixed by a mounting groove box screw, and the lower end naturally droops, so that the substrate 6 is vertically placed in the reaction solution.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the communication may be direct, indirect via an intermediate medium, or internal to both elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (10)
1. A preparation equipment for a CIGS thin film battery buffer layer is characterized in that: the device comprises a constant-temperature water bath device, a fixing device, a stirring magneton, a magnetic stirrer, a sealing cover and a reaction container, wherein the reaction container is placed in the constant-temperature water bath device, a containing cavity with an opening at one end is formed in the reaction container, and the sealing cover covers the opening end of the containing cavity to seal the containing cavity;
the fixing device and the stirring magnetons are both positioned in the accommodating cavity, and the fixing device is used for fixing a substrate of the CIGS thin film battery; the magnetic stirrer is positioned outside the containing cavity and used for driving the stirring magnetons to rotate.
2. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 1, wherein: the fixing device comprises a body, wherein the body is provided with a fixing hole, and the fixing hole is used for fixing the substrate.
3. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 2, wherein: the body bag comprises at least two upright columns which are arranged side by side and are mutually spaced, through holes penetrating through the upright columns are formed in the upright columns, and the axes of the through holes are vertical to the axes of the upright columns;
and through holes positioned on the same plane on the plurality of upright posts form the fixing holes.
4. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 1, wherein: the fixing device comprises at least one fixing block, the upper end of the fixing block is connected with the sealing cover, the lower end of the fixing block is provided with a mounting groove used for mounting the substrate, and the side wall of the mounting groove is provided with a screw hole.
5. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 4, wherein: the fixed block is equipped with a plurality ofly, and a plurality ofly the fixed block is parallel to each other and interval arrangement.
6. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 4, wherein: the fixed block is round platform form, the axis of fixed block with the axis of reaction vessel is parallel.
7. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 1, wherein: the sealing cover is provided with a liquid inlet communicated with the accommodating cavity.
8. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 1, wherein: the detection end of the pH thermometer penetrates through the through hole in the sealing cover to extend into the containing cavity, and the pH thermometer is in sealing fit with the through hole.
9. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 1, wherein: the constant-temperature water bath device is an ultrasonic constant-temperature water bath kettle.
10. The fabrication facility for CIGS thin film cell buffer layers as claimed in claim 1, wherein: the stirring magnetons and the magnetic stirrer are positioned on two opposite sides of the bottom wall of the reaction container, and the stirring magnetons are placed on the bottom wall of the reaction container.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920990570.8U CN210467864U (en) | 2019-06-27 | 2019-06-27 | Preparation equipment for CIGS thin film battery buffer layer |
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| CN201920990570.8U CN210467864U (en) | 2019-06-27 | 2019-06-27 | Preparation equipment for CIGS thin film battery buffer layer |
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| CN210467864U true CN210467864U (en) | 2020-05-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086387A (en) * | 2020-08-14 | 2020-12-15 | 北京智创芯源科技有限公司 | Chip cleaning device and cleaning method |
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2019
- 2019-06-27 CN CN201920990570.8U patent/CN210467864U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086387A (en) * | 2020-08-14 | 2020-12-15 | 北京智创芯源科技有限公司 | Chip cleaning device and cleaning method |
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Effective date of registration: 20210111 Address after: 101499 0307, 3rd floor, building 1, yard 61, Qingchun Road, Huairou District, Beijing Patentee after: Beijing Zhuoyi New Energy Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210312 Address after: 101400 Yanqi Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Dongjun new energy Co.,Ltd. Address before: 101499 0307, 3rd floor, building 1, yard 61, Qingchun Road, Huairou District, Beijing Patentee before: Beijing Zhuoyi New Energy Technology Co.,Ltd. |
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