CN2159398Y - coaxial magnetron sputtering target - Google Patents
coaxial magnetron sputtering target Download PDFInfo
- Publication number
- CN2159398Y CN2159398Y CN 93214070 CN93214070U CN2159398Y CN 2159398 Y CN2159398 Y CN 2159398Y CN 93214070 CN93214070 CN 93214070 CN 93214070 U CN93214070 U CN 93214070U CN 2159398 Y CN2159398 Y CN 2159398Y
- Authority
- CN
- China
- Prior art keywords
- target
- magnetron sputtering
- ring
- matrix
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910000859 α-Fe Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910052804 chromium Inorganic materials 0.000 abstract description 4
- 239000011651 chromium Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000013077 target material Substances 0.000 abstract 3
- 239000000498 cooling water Substances 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000009776 industrial production Methods 0.000 abstract 1
- 239000006148 magnetic separator Substances 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009504 vacuum film coating Methods 0.000 description 1
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Abstract
The utility model provides a magnetron sputtering target which can be applied to plate decorative chromium films and tungsten carbide, superhard films and multi-element material mixed films on large-area substrates. The magnetic separator consists of a non-magnetic metal matrix (1), a magnet (2), a spacer (3) and a cooling water pipe (4). The outer layer of the target substrate adopts a target ring (5) made of high-hardness and high-melting-point metal, and the annular sleeving structure can change the sputtering part of the target material by moving the position of the magnetic ring, is convenient for replacing a defective target ring, can improve the utilization rate of the target material to more than 70 percent, and provides the target material suitable for industrial production for pollution-free film coating. The utility model has the characteristics of the sculpture degree of consistency is good, and the sculpture area is big, and deposition rate is high, and the film degree of consistency is good, simple structure, easy manufacturing.
Description
The utility model relates to a kind ofly can be coated with coaxial magnetron sputtering target superhard, anticorrosion, decorating film on metallic substance and non-metallic material material products.
Coaxial magnetic control sputtering device, be a kind of device of magnetron sputtering and ion plating combination, it makes film material be converted into the process and the condition of molecule (atom), be under the state of a successive rectangular area and carry out, so the molecule (atom) of film material distributes between film material (target) and the substrate (workpiece), has better uniform property.
Existing coaxial magnetic control sputtering device, application be copper (imitative gold) and aluminium, and minority titanium nitride, but the coatings material quantity is few, target utilization is not high, the bonding force of rete and substrate is poor, performance is not ideal.
The purpose of this utility model: successfully solved fusing point and surpassed coaxial magnetron sputtering target that pure metal, alloy, compound-material that 1200 ℃ and hardness surpasses HRC60 combine and on non-metallic substrate such as glass, pottery, plastics, textiles and various metal base, coat corresponding pure chromium film, the problem of Chrome metal powder film, pure tungsten film and carbonization tungsten film.
The utility model can be a medium with the argon gas in the 2-2.4/10 vacuum film coating chamber, control target voltage DC0-660V, be coated with superhard, anticorrosion, a decoration coating under the target current DC0-40A condition, these retes have high rigidity, high corrosion resistance, characteristic such as high temperature resistant, strong adhesion.Because target adopts the annular casing assembling structure, be convenient to change the defectiveness scoring ring, and change the sputter position of target by mobile magnet ring device, thereby target utilization can be increased to more than 70% (residue partly recyclable be processed into new ring again use) again, for pollution-free plated film provides a kind of target that is applicable to suitability for industrialized production.
The utility model is made of matrix (1), magnet (2), barrier sheet (3), water-cooled tube (4), it is characterized in that: matrix (1) adopts nonmagnetic material to manufacture, magnet (2) is housed in its matrix, water-cooled tube (4), barrier sheet (3), the matrix outside is set with scoring ring (5).Thereby constitute a kind of coaxial magnetron sputtering target.This structure has increased magnetic-field component, reduces magnetic flux and leaks outside, and has the etching good evenness of target, the characteristics that the etching area is big, deposition speed is high.
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is the specification digest accompanying drawing.
Now in conjunction with the accompanying drawings the utility model is described in detail.
The utility model adopt some non-magnetic metal as: aluminium, copper, titanium stainless material are made matrix (1), magneticsubstance is housed as the permanent-magnetic clamp that ferrite, electromagnet are made (2) and water-cooled tube (4) in the matrix, carbon-free electrician's iron is housed, the barrier sheet that siliconized plate is made (3) between the permanent-magnetic clamp (2); It is material that matrix outside is set with high rigidity, refractory metal or metal alloy, the scoring ring (5) that adopts powder metallurgy process to be made into, and the quantity of suit scoring ring can be if necessary in 2---and 100.When adopting powder metallurgy process to manufacture target, can prepare different components as required or different proportioning material powder is made corresponding scoring ring.The utility model has been made corresponding carbonization tungsten target respectively with wolfram varbide, chromium, Chrome metal powder, tungsten and multielement material, pure chromium target, Chrome metal powder target, pure tungsten target and multielement material mixing film target.
Two ends with target during use are enclosed within on plastic insulation ring and the shield ring, install on the coating equipment and can use.Target carries out water cycle by water-in (6) water inlet, water port (7) draining in the course of the work, reaches cooling.
Claims (3)
1, a kind of coaxial magnetron sputtering target, constitute by matrix (1), magnet (2), barrier sheet (3), water-cooled tube (4), it is characterized in that: matrix (1) adopts nonmagnetic material to manufacture, magnet (2) is housed in its matrix, water-cooled tube (4), barrier sheet (3), the matrix outside is set with scoring ring (5).
2, by the described coaxial magnetron sputtering target of claim 1, it is characterized in that: magnet (2) adopts ferrite, electromagnet to be made into permanent-magnetic clamp.
3, by claim 1 or 2 described coaxial magnetron sputtering targets, it is characterized in that: scoring ring (5) quantity that is sleeved on the matrix (1) is individual if necessary in 2-100.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93214070 CN2159398Y (en) | 1993-04-13 | 1993-04-13 | coaxial magnetron sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93214070 CN2159398Y (en) | 1993-04-13 | 1993-04-13 | coaxial magnetron sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2159398Y true CN2159398Y (en) | 1994-03-23 |
Family
ID=33794969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93214070 Expired - Fee Related CN2159398Y (en) | 1993-04-13 | 1993-04-13 | coaxial magnetron sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2159398Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100437103C (en) * | 2005-07-22 | 2008-11-26 | 浙江工业大学 | Catalysis electrode of tungsten carbide |
| CN102456478A (en) * | 2010-10-22 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnet and processing method and magnetron sputtering source thereof |
| CN108118523A (en) * | 2017-11-28 | 2018-06-05 | 无锡中斯盾科技有限公司 | A kind of unleaded matter ray radiation protection cloth and preparation method thereof |
-
1993
- 1993-04-13 CN CN 93214070 patent/CN2159398Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100437103C (en) * | 2005-07-22 | 2008-11-26 | 浙江工业大学 | Catalysis electrode of tungsten carbide |
| CN102456478A (en) * | 2010-10-22 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnet and processing method and magnetron sputtering source thereof |
| CN108118523A (en) * | 2017-11-28 | 2018-06-05 | 无锡中斯盾科技有限公司 | A kind of unleaded matter ray radiation protection cloth and preparation method thereof |
| CN108118523B (en) * | 2017-11-28 | 2022-10-25 | 无锡中斯盾科技有限公司 | Lead-free radiation protection cloth and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |