CN215118903U - Chip transfer system - Google Patents
Chip transfer system Download PDFInfo
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- CN215118903U CN215118903U CN202121522076.2U CN202121522076U CN215118903U CN 215118903 U CN215118903 U CN 215118903U CN 202121522076 U CN202121522076 U CN 202121522076U CN 215118903 U CN215118903 U CN 215118903U
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Abstract
The present application relates to a chip transfer system. The chip transfer system includes: the bearing unit is used for bearing a chip epitaxial substrate and a target substrate, the chip epitaxial substrate comprises a first substrate and a chip which are connected, and the chip is arranged on one side of the first substrate close to the target substrate; and the laser unit is used for emitting first laser and second laser to the bearing unit, stripping the chip from the first substrate by adopting the first laser, and bonding the chip and the target substrate by adopting the second laser. Through the chip transfer system, the laser unit can respectively use two beams of laser for stripping the chip in the chip epitaxial substrate and bonding the chip on the target substrate, so that the system has the dual functions of a selective laser stripping system and a selective laser bonding system in the prior art, the production efficiency is improved, and the production cost is saved.
Description
Technical Field
The application relates to the technical field of chip transfer, in particular to a chip transfer system.
Background
Micro Light Emitting diodes (Micro-LEDs) are a new generation of Display technology, and compared with Liquid Crystal Display (LCD) and Organic Light Emitting semiconductor (OLED) technologies, the Micro Light Emitting diodes have the advantages of higher brightness, better Light Emitting efficiency, low power consumption and long service life.
In the Micro-LED preparation process flow process, mass transfer is taken as a key point for technical breakthrough, the flow mainly comprises laser stripping, mass transfer and detection and repair, selective laser stripping and laser bonding are realized as the core of mass transfer, and the laser transfer and laser bonding are finished by matching with different laser equipment at present, so that the production cost is greatly improved, and the transfer yield and efficiency are reduced by multiple processes.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned deficiencies of the prior art, the present application aims to provide a chip transfer system, which aims to solve the problems of high production cost and low transfer yield and efficiency of laser transfer and laser bonding in the prior art.
The application provides a chip transfer system, which includes:
the bearing unit is used for bearing a chip epitaxial substrate and a target substrate, the chip epitaxial substrate comprises a first substrate and a chip which are connected, and the chip is arranged on one side of the first substrate close to the target substrate;
and the laser unit is used for emitting first laser and second laser to the bearing unit, stripping the chip from the first substrate by adopting the first laser, and bonding the chip and the target substrate by adopting the second laser.
Through the chip transfer system, the laser unit can respectively use two beams of laser for stripping the chip in the chip epitaxial substrate and bonding the chip on the target substrate, so that the system has the dual functions of a selective laser stripping system and a selective laser bonding system in the prior art, the production efficiency is improved, and the production cost is saved.
Optionally, the laser unit includes: the laser is used for generating laser to be split by radiation; and the light splitting component is arranged on the light emitting side of the laser and is used for splitting the laser to be split into light to obtain a first laser and a second laser with different light emitting directions. The beam splitting assembly can split one laser beam to obtain laser beams with different energies, so that the number of lasers is reduced under the requirement of the same number of laser beams, and the production cost is reduced.
Optionally, the light splitting assembly includes a light splitter configured to transmit a first laser beam having a first energy value and reflect a second laser beam having a second energy value, where the first energy value is greater than the second energy value. Compared with the laser bonding process, the laser lift-off process needs larger laser energy, so that the angle relationship between the spectroscope and incident light is reasonably set, the first laser penetrating through the spectroscope has larger energy and is used for laser lift-off, and the second laser reflected by the spectroscope has smaller energy and is used for laser bonding, so that the huge transfer efficiency is effectively improved.
Optionally, the carrier unit has a first side and a second side opposite to each other, and the carrier chip epitaxial substrate and the target substrate are sequentially disposed along a direction from the first side to the second side. In the above arrangement, it is assumed that the first side is located above the second side, the target substrate is fixed or placed in the carrying unit through the carrying unit, the chip epitaxial substrate is placed above the target substrate, and the chip in the chip epitaxial substrate placement is disposed close to the target substrate. It should be noted that the positional relationship between the chip epitaxial substrate and the target substrate in the present application is not limited to the above-mentioned optional manner, for example, one side may also be located below the second side, at this time, the chip epitaxial substrate is fixed or placed in the carrying unit through the carrying unit, and the target substrate is placed above the chip epitaxial substrate, and the present application does not limit the positional relationship between the two.
Optionally, the first light path adjusting component is configured to adjust a light emitting direction of the first laser light to a direction in which the first side faces the second side; the second light path adjusting component is configured to adjust the light emitting direction of the second laser to a direction in which the second side faces the first side. Through the first light path adjusting assembly, more first laser can be radiated into the bearing unit, so that the process efficiency of laser stripping is improved; through the second light path adjusting assembly, more second laser can be radiated into the bearing unit, so that the process efficiency of laser bonding is improved.
Optionally, the first optical path adjusting component and the second optical path adjusting component independently include at least one reflecting component disposed along the optical path, and the latter reflecting component is disposed on the light exit side of the former reflecting component. Through reasonable setting of one or more reflection assembly, can be used for laser to peel off and laser bonding in can reflecting more laser to the load-bearing unit to the huge transfer efficiency has been improved.
Optionally, the reflection component is a galvanometer, and the first optical path adjusting component and the second optical path adjusting component further include: and the galvanometer driver is electrically connected with the galvanometer, and the galvanometer comprises an X galvanometer and/or a Y galvanometer. The vibrating mirror driver can be used for controlling the rotating direction of the vibrating mirror, so that the reflecting direction of the vibrating mirror can be adjusted in real time in the process, more laser can be reflected to the bearing unit for laser stripping and laser bonding, and the huge transfer efficiency is further improved.
Optionally, the laser unit further includes: the first focusing assembly is arranged on the first side and used for focusing the first laser to the peeling position of the first substrate and the chip, and the first laser focused to the peeling position peels the chip from the first substrate; and the second focusing assembly is arranged on the second side and used for focusing the second laser to the bonding position of the target substrate and the chip, and the second laser focused to the bonding position bonds the chip and the target substrate. The first focusing assembly can enable the first laser to form a high-energy-density light spot at the stripping position, and the second focusing assembly can enable the second laser to form a high-energy-density light spot at the bonding position, so that the process efficiency of laser stripping and laser bonding is improved.
Optionally, the laser unit further includes: a first energy attenuator disposed on the first side for attenuating energy of the first laser light; and the second energy attenuator is arranged on the second side and is used for attenuating the energy of the second laser. The first energy attenuator and the second energy attenuator can reasonably attenuate laser energy according to practical application, so that damage to a chip or a target substrate caused by overhigh laser energy is avoided.
Optionally, the carrying unit includes: the clamping assembly is used for clamping the chip epitaxial substrate and/or the target substrate; or the object stage is used for supporting the chip epitaxial substrate and/or the target substrate, and the object stage is of a light-transmitting structure or is provided with a laser channel penetrating through the object stage. The clamping assembly can clamp the edge of the chip epitaxial substrate and/or the target substrate, so that laser can be radiated to a peeling position in the chip epitaxial substrate and a bonding position between the chip and the target substrate; the stage may be used to support the chip epitaxial substrate and/or the target substrate, and in order to allow the two laser beams to be radiated from the two opposite sides to the peeling position and the bonding position, the stage may have a laser channel for allowing the laser beam to pass through, or the stage may be made of a transparent material to have a transparent structure so that the laser beam can be transmitted and applied to the peeling position or the bonding position.
Drawings
FIG. 1 is a schematic diagram of a chip transfer system according to an embodiment of the present application;
FIG. 2 is a schematic cross-sectional view of a chip epitaxial substrate and a target substrate in region A in the chip transfer system shown in FIG. 1;
FIG. 3 is a schematic cross-sectional view of a substrate after the die shown in FIG. 2 has been peeled from a first substrate and bonded to a target substrate using a die transfer system in an embodiment of the present application;
FIG. 4 is a schematic diagram illustrating a spectroscopic principle of a spectroscope in a chip transfer system according to an embodiment of the present disclosure.
Description of reference numerals:
10-a carrier unit; 110-chip epitaxial substrate; 111-a first substrate; 112-chip; 120-a target substrate; 130-a solder material; 20-a laser; 30-a light splitting assembly; 310-a beam splitter; 410-a first optical path adjustment component; 420-a second optical path adjustment component; 430-a reflective component; 440-galvanometer driver; 510-a first focusing assembly; 520-a second focusing assembly; 610-a first energy attenuator; 620-second energy attenuator.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
As described in the background section, laser transfer and laser bonding are both performed with different laser devices, which not only greatly increases the production cost, but also reduces the transfer yield and efficiency through multiple processes.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The inventors of the present application have studied in view of the above-mentioned problems, and have proposed a chip 112 transfer system, as shown in fig. 1 and 2, the chip 112 transfer system including:
the carrying unit 10 is used for carrying a chip epitaxial substrate 110 and a target substrate 120, the chip epitaxial substrate 110 includes a first substrate 111 and a chip 112 which are connected, and the chip 112 is disposed on one side of the first substrate 111 close to the target substrate 120;
and a laser unit for emitting a first laser and a second laser to the carrying unit 10, peeling the chip 112 from the first substrate 111 with the first laser, and bonding the chip 112 and the target substrate 120 with the second laser.
Through the chip 112 transfer system, the laser unit can respectively use two beams of laser for peeling the chip 112 in the chip epitaxial substrate 110 and bonding the chip 112 on the target substrate 120, so that the system has the dual functions of a laser peeling system and a laser bonding system in the prior art, the production efficiency is improved, and the production cost is saved.
For example, the way of laser bonding the chip 112 and the target substrate 120 by the second laser is: the soldering material 130 is fixed on the target substrate 120, and the position of the soldering material 130 of the target substrate 120 corresponds to the position of the chip 112 on the first substrate 111 one by one, so that the soldering material 130 contacts the chip 112, the soldering material 130 is melted by the second laser, and the bonding portion for fixing the chip 112 is formed after the soldering material 130 is cooled, as shown in fig. 2.
By using the above chip 112 transfer system of the present application, selective transfer of the chip 112 can also be achieved, in this case, the chip 112 is peeled off from the first substrate 111 by the first laser, and the chip 112 is selectively bonded to the target substrate 120 by the second laser, so that the chip 112 having a specific position selectively transferred on the target substrate 120 is obtained, as shown in fig. 3.
In some embodiments, the laser unit includes a laser 20 and a light splitting assembly 30, where the laser 20 is configured to generate laser light to be split, and the light splitting assembly 30 is disposed on a light emitting side of the laser 20 and configured to split the laser light to be split, so as to obtain a first laser light and a second laser light with different light emitting directions. The beam splitting assembly 30 can split a laser beam to obtain laser beams with different energies, so that the number of the lasers 20 is reduced under the requirement of the same number of the laser beams, and the production cost is reduced.
Illustratively, the light splitting assembly 30 includes a beam splitter 310, as shown in fig. 4, the beam splitter 310 is configured to transmit a first laser beam having a first energy value and reflect a second laser beam having a second energy value, and the first energy value is greater than the second energy value. Compared with the laser bonding process, the laser lift-off process requires larger laser energy, so that by reasonably setting the angle relationship between the beam splitter 310 and incident light, the first laser penetrating through the beam splitter 310 has larger energy for laser lift-off, while the second laser reflected by the beam splitter 310 has relatively smaller energy for laser bonding, thereby effectively improving the massive transfer efficiency, wherein the energy of the transmitted first laser can be 90% of that of the laser before beam splitting, and the energy of the reflected second laser can be 10% of that of the laser before beam splitting.
In some embodiments, the carrier unit has a first side and a second side opposite to each other, and the carrier chip epitaxial substrate 110 and the target substrate 120 are sequentially disposed along a direction from the first side toward the second side.
In the above embodiment, assuming that the first side is located above the second side, the target substrate 120 is fixed or placed in the carrier unit 10 by the carrier unit 10, the chip epitaxial substrate 110 is placed above the target substrate 120, and the chip 112 in the placement of the chip epitaxial substrate 110 is disposed close to the target substrate 120.
It should be noted that the positional relationship between the chip epitaxial substrate 110 and the target substrate 120 in the present application is not limited to the above-mentioned alternative manner, for example, one side may also be located below the second side, at this time, the chip epitaxial substrate 110 is fixed or placed in the carrying unit 10 by the carrying unit 10, the target substrate 120 is placed above the chip epitaxial substrate 110, and the present application does not limit the positional relationship between the two.
In some embodiments, the first optical path adjusting element 410 is configured to adjust the light emitting direction of the first laser light to a direction from the first side to the second side; the second optical path adjusting component 420 is configured to adjust the light emitting direction of the second laser light to a direction in which the second side faces the first side. Through the first optical path adjusting assembly 410, more first laser can be radiated into the bearing unit 10, so that the process efficiency of laser lift-off is improved; through the second optical path adjusting assembly 420, more second laser can be radiated into the bearing unit 10, so that the process efficiency of laser bonding is improved.
In the above embodiment, the first optical path adjustment assembly 410 and the second optical path adjustment assembly 420 may independently include at least one reflection assembly 430 disposed along the optical path, and the latter reflection assembly 430 is disposed at the light emitting side of the former reflection assembly 430. By properly arranging one or more reflection assemblies 430, more laser can be reflected into the carrying unit 10 for laser lift-off and laser bonding, thereby improving the mass transfer efficiency.
Illustratively, the reflecting component 430 is a galvanometer, the galvanometer includes an X galvanometer and/or a Y galvanometer, and the first optical path adjusting component 410 and the second optical path adjusting component 420 further include at least one galvanometer driver 440 electrically connected to the galvanometer, as shown in fig. 1. The galvanometer driver 440 can be used for controlling the rotation direction of the galvanometer, so that the reflection direction of the galvanometer can be adjusted in real time in the process, more laser can be reflected to the bearing unit 10 for laser stripping and laser bonding, and the huge transfer efficiency is further improved.
In some embodiments, the laser unit further includes a first focusing assembly 510 and a second focusing assembly 520, the first focusing assembly 510 is disposed on the first side for focusing the first laser to a peeling position of the first substrate 111 and the chip 112, the first laser focused to the peeling position peels the chip 112 from the first substrate 111, the second focusing assembly 520 is disposed on the second side for focusing the second laser to a bonding position of the target substrate 120 and the chip 112, and the second laser focused to the bonding position bonds the chip 112 and the target substrate 120.
In the above embodiment, the first focusing assembly 510 can form the first laser into a high energy density spot at the peeling position, and the second focusing assembly 520 can form the second laser into a high energy density spot at the bonding position, thereby improving the process efficiency of laser peeling and laser bonding.
In the above embodiment, the first focusing assembly 510 and the second focusing assembly 520 may include field lenses, or other optical elements for realizing laser focusing in the prior art, and are not limited herein.
In some embodiments, the laser unit further comprises a first energy attenuator 610 and a second energy attenuator 620, the first energy attenuator 610 being disposed on the first side for attenuating the energy of the first laser light, and the second energy attenuator 620 being disposed on the second side for attenuating the energy of the second laser light. The first energy attenuator 610 and the second energy attenuator 620 can attenuate laser energy reasonably according to practical application, so as to avoid damage to the chip 112 or the target substrate 120 due to over-high laser energy.
Illustratively, the carrier unit 10 includes a clamping assembly for clamping the chip epitaxial substrate 110 and/or the target substrate 120. The above-described clamping assembly enables laser radiation to a peeling position in the chip epitaxial substrate 110 and a bonding position between the chip 112 and the target substrate 120 by clamping the edge of the chip epitaxial substrate 110 and/or the target substrate 120.
The device for carrying the chip epitaxial substrate 110 and/or the target substrate 120 in the carrying unit 10 is not limited to the above-mentioned clamping assembly, and for example, the carrying unit 10 includes a clamping assembly, the stage is used for supporting the chip epitaxial substrate 110 and/or the target substrate 120, and the stage is a light-transmitting structure or has a laser channel therethrough. The stage may be formed with a laser passage for passing the laser therethrough so that the two laser beams can be radiated to the peeling position and the bonding position from opposite sides, respectively, or may be formed of a transparent material so that the laser beam can be transmitted and applied to the peeling position or the bonding position.
It should be understood that the application of the present application is not limited to the above examples, and that modifications or changes may be made by those skilled in the art based on the above description, and all such modifications and changes are intended to fall within the scope of the appended claims.
Claims (10)
1. A chip transfer system, comprising:
the device comprises a bearing unit, a first substrate and a second substrate, wherein the bearing unit is used for bearing a chip epitaxial substrate and a target substrate, the chip epitaxial substrate comprises a first substrate and a chip which are connected, and the chip is arranged on one side of the first substrate close to the target substrate;
and the laser unit is used for emitting a first laser and a second laser to the bearing unit, stripping the chip from the first substrate by adopting the first laser, and bonding the chip and the target substrate by adopting the second laser.
2. The chip transfer system of claim 1, wherein the laser unit comprises:
the laser is used for generating laser to be split by radiation;
and the light splitting component is arranged on the light emitting side of the laser and used for splitting the laser to be split into light to obtain the first laser and the second laser with different light emitting directions.
3. The chip transfer system according to claim 2, wherein the beam splitter assembly includes a beam splitter for transmitting the first laser light having a first energy value and reflecting the second laser light having a second energy value, the first energy value being greater than the second energy value.
4. The chip transfer system of claim 2, wherein the carrier unit has first and second opposing sides, the carrier chip epitaxial substrate and the target substrate being sequentially disposed along the first side toward the second side.
5. The chip transfer system of claim 4, wherein the laser unit further comprises:
the first light path adjusting component is used for adjusting the light emitting direction of the first laser to a direction from the first side to the second side;
and the second light path adjusting component is used for adjusting the light emitting direction of the second laser to the direction of the second side facing the first side.
6. The chip transfer system according to claim 5, wherein the first optical path adjustment assembly and the second optical path adjustment assembly independently comprise at least one reflective assembly disposed along the optical path, the latter reflective assembly being disposed on the light exit side of the former reflective assembly.
7. The chip transfer system according to claim 6, wherein the reflecting member is a galvanometer, and the first optical path adjusting member and the second optical path adjusting member further comprise:
and the galvanometer driver is electrically connected with the galvanometer, and the galvanometer comprises an X galvanometer and/or a Y galvanometer.
8. The chip transfer system of claim 4, wherein the laser unit further comprises:
the first focusing assembly is arranged on the first side and used for focusing the first laser to a peeling position of the first substrate and the chip, and the first laser focused to the peeling position peels the chip from the first substrate;
and the second focusing assembly is arranged on the second side and used for focusing the second laser to the bonding position of the target substrate and the chip, and the second laser focused to the bonding position bonds the chip and the target substrate.
9. The chip transfer system of claim 4, wherein the laser unit further comprises:
a first energy attenuator disposed on the first side for attenuating energy of the first laser light;
and the second energy attenuator is arranged on the second side and is used for attenuating the energy of the second laser.
10. The chip transfer system according to any one of claims 1 to 9, wherein the carrying unit includes:
the clamping assembly is used for clamping the chip epitaxial substrate and/or the target substrate; or
And the object stage is used for supporting the chip epitaxial substrate and/or the target substrate, is of a light-transmitting structure, or is provided with a through laser channel.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121522076.2U CN215118903U (en) | 2021-07-05 | 2021-07-05 | Chip transfer system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121522076.2U CN215118903U (en) | 2021-07-05 | 2021-07-05 | Chip transfer system |
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| CN215118903U true CN215118903U (en) | 2021-12-10 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114682910A (en) * | 2022-05-13 | 2022-07-01 | 东莞市中麒光电技术有限公司 | Crystal grain welding device and welding method adopting lens array |
| CN115178874A (en) * | 2022-09-13 | 2022-10-14 | 长春希达电子技术有限公司 | Laser welding unit, LED chip batch transfer bonding device and method |
| WO2023159590A1 (en) * | 2022-02-28 | 2023-08-31 | 京东方科技集团股份有限公司 | Optical path structure, optical path system and transfer method |
-
2021
- 2021-07-05 CN CN202121522076.2U patent/CN215118903U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023159590A1 (en) * | 2022-02-28 | 2023-08-31 | 京东方科技集团股份有限公司 | Optical path structure, optical path system and transfer method |
| CN114682910A (en) * | 2022-05-13 | 2022-07-01 | 东莞市中麒光电技术有限公司 | Crystal grain welding device and welding method adopting lens array |
| CN115178874A (en) * | 2022-09-13 | 2022-10-14 | 长春希达电子技术有限公司 | Laser welding unit, LED chip batch transfer bonding device and method |
| CN115178874B (en) * | 2022-09-13 | 2022-12-27 | 长春希达电子技术有限公司 | Laser welding unit, LED chip batch transfer bonding device and method |
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