JPS61226972A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS61226972A JPS61226972A JP60066478A JP6647885A JPS61226972A JP S61226972 A JPS61226972 A JP S61226972A JP 60066478 A JP60066478 A JP 60066478A JP 6647885 A JP6647885 A JP 6647885A JP S61226972 A JPS61226972 A JP S61226972A
- Authority
- JP
- Japan
- Prior art keywords
- onto
- photoelectric conversion
- connecting section
- reflector
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 18
- 239000011521 glass Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 15
- 238000002310 reflectometry Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008961 swelling Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、光の利用率の高い太陽電池に係り、特に短絡
電流密度が高く、高効率の太陽電池、すなわち光電変換
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a solar cell with a high light utilization rate, and particularly to a solar cell with a high short circuit current density and high efficiency, that is, a photoelectric conversion device.
従来、光の有効利用を実現した光電変換装置および太陽
電池モジュールとしては、特開昭５６−１６９３７３、
特開昭５７−１２５６７に記載のように、丸形セルをモ
ジュール化する時に生ずるセル間の隙間に入射する光を
セル表面に導くために、集光レンズ（表面側）や光反射
面を有する切子面（セル間）を設けたものとなっていた
。これらの方法は、大きな隙間を有する丸形セルモジュ
ールの場合には、ある程度の効果はあるが、角形セルモ
ジュールや、積層型アモルファスシリコン太陽電池の場
合には効果は小さい。Conventionally, photoelectric conversion devices and solar cell modules that have realized the effective use of light include Japanese Patent Application Laid-Open No. 56-169373;
As described in Japanese Patent Application Laid-Open No. 57-12567, a condenser lens (on the front side) and a light reflecting surface are provided to guide light incident on the cell surface into the gaps between the cells that occur when round cells are modularized. It had facets (between cells). These methods are somewhat effective in the case of round cell modules with large gaps, but are less effective in the case of prismatic cell modules and stacked amorphous silicon solar cells.
また、従来、太陽電池の実用変換効率やモジュ−ル変換
効率を高めるために、結晶系太陽電池では微細な表面電
極パターンや角型セルを採用したり、またアモルファス
Ｓｉ太陽電池では積層型セル接続部のレーザによる微細
パターニングを採用したりしていた。Furthermore, in order to increase the practical conversion efficiency and module conversion efficiency of solar cells, crystalline solar cells have adopted fine surface electrode patterns and square cells, and amorphous Si solar cells have adopted stacked cell connections. In some cases, fine patterning using a laser was used.
しかし、これらの方法には限界があり、全モジュール（
あるいはパネル）面積の５〜１０％に入射する光の利用
は最後まで不可能である。However, these methods have limitations and cannot be applied to all modules (
Alternatively, it is impossible to utilize the light incident on 5 to 10% of the area of the panel.
本発明の目的は、太陽電池の表面電極やセル間の接続部
に入射する光を太陽電池表面に有効に導き、短絡電流密
度の高い、したがって高効率の太陽電池即ち、光電変換
装置を提供することにある。An object of the present invention is to provide a solar cell, that is, a photovoltaic conversion device, which effectively guides light incident on the surface electrodes of the solar cell and the connections between the cells to the surface of the solar cell, has a high short-circuit current density, and therefore has high efficiency. There is a particular thing.
本発明は、表面電極上やセル間の接続部に入射した光を
光電流発生領域表面上へ導くようにしたものである。In the present invention, light incident on a surface electrode or a connection between cells is guided onto the surface of a photocurrent generating region.
表面電極やセル接続部の上に表面反射率の高いものを形
成あるいは配置したり、表面電極やセル接続部の−に方
、即ち、これらより光入射側にあるガラス等の透明基体
に凹凸を設けたり、該透明基体中に反射率の高いものを
はめ込むことにより、表面電極やセル接続部上に入射し
た光は、光電流発生領域へ導かれ、入射光の有効利用が
実現できた。Forming or arranging something with high surface reflectance on top of the surface electrode or cell connection, or creating irregularities on a transparent substrate such as glass on the side of the surface electrode or cell connection, that is, on the light incident side. By providing a transparent substrate or inserting a material with a high reflectance into the transparent substrate, the light incident on the surface electrode or the cell connection portion is guided to the photocurrent generation region, making it possible to realize effective use of the incident light.
以下、本発明の実施例を第１図〜第７図により説明する
。Embodiments of the present invention will be described below with reference to FIGS. 1 to 7.
実施例１゜
第１図に示す結晶Ｓｉ太陽電池１１の表面パターン状電
極１２上に山型の反射体１３を接着しパネル化した。該
反射体を設けることにより、短絡電流密度は、７％向上
した。Example 1 A chevron-shaped reflector 13 was adhered onto the surface patterned electrode 12 of the crystalline Si solar cell 11 shown in FIG. 1 to form a panel. By providing the reflector, the short circuit current density was improved by 7%.
また、この反射体は表面電極を山型に盛りあげることに
よっても擬似的に実現できた。この場合の短絡電流密度
の上昇率は４％であった。Additionally, this reflector could be simulated by raising the surface electrode into a mountain shape. The rate of increase in short circuit current density in this case was 4%.
実施例２゜
第２図に示す結晶Ｓｉ太陽電池２１の表面電極２２と同
じパターンの■溝２３をガラス板２４に設けた。該Ｖ溝
を設けることにより、短絡型流密度は約６％向上した。Example 2 A glass plate 24 was provided with grooves 23 having the same pattern as the surface electrode 22 of the crystalline Si solar cell 21 shown in FIG. By providing the V-groove, the short-circuit flow density was improved by about 6%.
第２図のＶ溝は、第３図の山型反射体、第４図のような
斜状の溝を設けた反射体で置き換えることができる。こ
れら基体はガラスに限らず透明な基体であればよい。さ
らに、第２図〜第４図のような加工された基体は、第１
図に示した実施例１と併用することも可能である。すな
わちガラス板１４に第２図から第４図に示した透明基体
を適用することである。The V-groove shown in FIG. 2 can be replaced by a chevron-shaped reflector shown in FIG. 3 or a reflector provided with oblique grooves as shown in FIG. 4. These substrates are not limited to glass, and any transparent substrate may be used. Furthermore, the processed substrate as shown in FIGS.
It is also possible to use it in combination with Example 1 shown in the figure. That is, the transparent substrate shown in FIGS. 2 to 4 is applied to the glass plate 14.
また、以上の実施例１と２は表面パターン状電極を有す
る太陽電池であれば、結晶Ｓｉ太陽電池に限る必要はな
く、化合物半導体電池、アモルファス太陽電池にも適用
可能である。Further, Examples 1 and 2 described above are not limited to crystalline Si solar cells as long as they have surface patterned electrodes, and can also be applied to compound semiconductor cells and amorphous solar cells.
実施例３．第５図の多段型アモルファス系太陽電池にお
いて、■溝を有するガラス基板５１上に透明導電膜５２
．アモルファスＳｉ系ｐｉｎ層５３゜裏面電極５４を順
時形成した。各層のパターニングにはレーザーを使用し
た。通常の平板なガラス基板を用いた時に比べ短絡電流
は１０％向上した。Example 3. In the multistage amorphous solar cell shown in FIG.
．． An amorphous Si-based pin layer 53° and a back electrode 54 were successively formed. A laser was used for patterning each layer. The short circuit current was improved by 10% compared to when a normal flat glass substrate was used.
実施例４゜
実施例３におけるＶ溝を有するガラス基板を、第４図の
反射体を内蔵するガラス基板６１に置き換え、多段型ア
モルファスＳｉ系太陽電池を形成した。通常の平板ガラ
ス基板を用いた時に比べ短絡電流は９％以上向上した。Example 4 The glass substrate having the V-groove in Example 3 was replaced with a glass substrate 61 having a built-in reflector shown in FIG. 4 to form a multistage amorphous Si solar cell. The short circuit current was improved by more than 9% compared to when a normal flat glass substrate was used.
実施例５゜
第７図に示す如く、太陽電池７１を接続するときの隙間
に反射体７０を置くことにより、光の利用率を高め、外
部出力を５％向上することができた。Example 5 As shown in FIG. 7, by placing a reflector 70 in the gap when solar cells 71 are connected, it was possible to increase the light utilization rate and increase the external output by 5%.
本実施例の反射体の代りに、隙間上のガラス板あるいは
透明基体に、第２図〜第４図の細工を施すことも有効で
ある。Instead of the reflector in this embodiment, it is also effective to apply the modifications shown in FIGS. 2 to 4 to a glass plate or transparent substrate above the gap.
本発明によれば、光の有効利用ができるので、短絡電流
、したがって、光電変換効率を従来より５〜１０％向上
できる効果がある。According to the present invention, since light can be used effectively, the short circuit current and therefore the photoelectric conversion efficiency can be improved by 5 to 10% compared to the conventional method.
第１図、第２図、第５図、第６図および第７図は、本発
明による光電変換装置の縦断面図、第３図および第４図
は本発明による光電変換装置の光入射側透明基体の縦断
面図である。
１１．２１．７１・・・太陽電池、１２．２２・・・表
面電極、１３，３１．．４１，６０．７０・・・反射体
、１４．２４−．３２，４２，７２・・・ガラス板ある
いは光透過体、１．５．２５・・・ポリフッカビニール
、５１．６１・・・ガラス板、５２．６２・・・透明電
極、５３．６３・・・少なくとも１つのｐｉｎ接合を含
む冨 １ 図 第 ２
図嘉３図 冨、！！図
￥ ５ 回1, 2, 5, 6 and 7 are longitudinal sectional views of a photoelectric conversion device according to the present invention, and FIG. 3 and 4 are light incident sides of the photoelectric conversion device according to the present invention. FIG. 3 is a longitudinal cross-sectional view of a transparent substrate. 11.21.71...Solar cell, 12.22...Surface electrode, 13,31. ．． 41,60.70...reflector, 14.24-. 32,42,72...Glass plate or light transmitting body, 1.5.25...Polyfluorovinyl, 51.61...Glass plate, 52.62...Transparent electrode, 53.63...・Temperature that includes at least one pin junction Figure 2
Zuka 3 Tomi! ! Figure ￥ 5 times
Claims (1)
、該反射体上に入射した光を光電変換に利用することを
特徴とする光電変換装置。 ２、上記表面電極が光反射体であることを特徴とする特
許請求の範囲第１項に記載の光電変換装置。 ３、上記光反射体を太陽電池の接続部上に有し、該反射
体上に入射した光を光電変換に利用することを特徴とす
る特許請求の範囲第１項に記載の光電変換装置。 ４、上記接続部が光反射体であることを特徴とする特許
請求の範囲第３項に記載の光電変換装置。 ５、光入射側にあるガラス板等の透明基体にＶ溝を有す
ることを特徴とする光電変換装置。 ６、上記Ｖ溝が光反射体であることを特徴とする特許請
求の範囲第５項に記載の光電変換装置。 ７、上記光反射体が、光入射側にあるガラス板等の透明
基体中に内蔵されていることを特徴とする特許請求の範
囲第１から４項に記載の光電変換装置。[Scope of Claims] 1. A photoelectric conversion device characterized by having a light reflector on the light incident side of a surface electrode of a solar cell, and using light incident on the reflector for photoelectric conversion. 2. The photoelectric conversion device according to claim 1, wherein the surface electrode is a light reflector. 3. The photoelectric conversion device according to claim 1, wherein the light reflector is provided on a connecting portion of a solar cell, and the light incident on the reflector is used for photoelectric conversion. 4. The photoelectric conversion device according to claim 3, wherein the connecting portion is a light reflector. 5. A photoelectric conversion device characterized by having a V-groove in a transparent substrate such as a glass plate on the light incident side. 6. The photoelectric conversion device according to claim 5, wherein the V groove is a light reflector. 7. The photoelectric conversion device according to claims 1 to 4, wherein the light reflector is built in a transparent substrate such as a glass plate on the light incident side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60066478A JPS61226972A (en) | 1985-04-01 | 1985-04-01 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60066478A JPS61226972A (en) | 1985-04-01 | 1985-04-01 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61226972A true JPS61226972A (en) | 1986-10-08 |
Family
ID=13316925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60066478A Pending JPS61226972A (en) | 1985-04-01 | 1985-04-01 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61226972A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1492170A3 (en) * | 2003-06-27 | 2007-08-15 | Sanyo Electric Co., Ltd. | Solar battery module |
| JP2009147363A (en) * | 2009-02-19 | 2009-07-02 | Sanyo Electric Co Ltd | Solar cell module |
| JP2010287715A (en) * | 2009-06-11 | 2010-12-24 | Mitsubishi Electric Corp | Thin film solar cell and method of manufacturing the same |
| JP2013524282A (en) * | 2010-04-06 | 2013-06-17 | オーワイ アイシーエス インテリジェント コントロール システムズ リミテッド | Laminated structure with embedded cavities used in solar cells and related manufacturing methods |
| WO2014132312A1 (en) * | 2013-02-26 | 2014-09-04 | 三洋電機株式会社 | Solar cell module, and solar cell module production method |
| JPWO2015045243A1 (en) * | 2013-09-30 | 2017-03-09 | パナソニックＩｐマネジメント株式会社 | Solar cell module and method for manufacturing solar cell module |
-
1985
- 1985-04-01 JP JP60066478A patent/JPS61226972A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1492170A3 (en) * | 2003-06-27 | 2007-08-15 | Sanyo Electric Co., Ltd. | Solar battery module |
| US8063299B2 (en) | 2003-06-27 | 2011-11-22 | Sanyo Electric Co., Ltd. | Solar battery module |
| CN102610682A (en) * | 2003-06-27 | 2012-07-25 | 三洋电机株式会社 | Solar battery module |
| US9780245B2 (en) | 2003-06-27 | 2017-10-03 | Panasonic Intellectual Property Mgmt Co., Ltd. | Solar battery module |
| JP2009147363A (en) * | 2009-02-19 | 2009-07-02 | Sanyo Electric Co Ltd | Solar cell module |
| JP2010287715A (en) * | 2009-06-11 | 2010-12-24 | Mitsubishi Electric Corp | Thin film solar cell and method of manufacturing the same |
| JP2013524282A (en) * | 2010-04-06 | 2013-06-17 | オーワイ アイシーエス インテリジェント コントロール システムズ リミテッド | Laminated structure with embedded cavities used in solar cells and related manufacturing methods |
| JP2016153897A (en) * | 2010-04-06 | 2016-08-25 | オーワイ アイシーエス インテリジェント コントロール システムズ リミテッド | Laminate structure with embedded cavities for use with solar cells and related method of manufacture |
| WO2014132312A1 (en) * | 2013-02-26 | 2014-09-04 | 三洋電機株式会社 | Solar cell module, and solar cell module production method |
| JPWO2014132312A1 (en) * | 2013-02-26 | 2017-02-02 | パナソニックＩｐマネジメント株式会社 | Solar cell module and method for manufacturing solar cell module |
| US10840393B2 (en) | 2013-02-26 | 2020-11-17 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell module and solar cell module manufacturing method |
| JPWO2015045243A1 (en) * | 2013-09-30 | 2017-03-09 | パナソニックＩｐマネジメント株式会社 | Solar cell module and method for manufacturing solar cell module |
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