CN202655797U - System for laser lift-off of LED (Light Emitting Diode) substrate - Google Patents
System for laser lift-off of LED (Light Emitting Diode) substrate Download PDFInfo
- Publication number
- CN202655797U CN202655797U CN 201220225992 CN201220225992U CN202655797U CN 202655797 U CN202655797 U CN 202655797U CN 201220225992 CN201220225992 CN 201220225992 CN 201220225992 U CN201220225992 U CN 201220225992U CN 202655797 U CN202655797 U CN 202655797U
- Authority
- CN
- China
- Prior art keywords
- led substrate
- laser
- femtosecond pulse
- crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model provides a system for laser lift-off of an LED (Light Emitting Diode) substrate. The system comprises a femtosecond pulse seed laser source, a frequency doubling crystal, a laser beam expanding focus device and a bearing component, wherein the frequency doubling crystal is used for carrying out multi-frequency doubling on femtosecond pulse laser emitted by the femtosecond pulse seed laser source, the frequency doubling coefficient is not less than 2, and the frequency doubling crystal is preferably selected from a triple frequency doubling crystal; the laser beam expanding focus device is used for carrying out beam expanding and line focusing on the femtosecond pulse seed laser emitted by the frequency doubling crystal, and outputting a linear light spot, and the length of the linear light spot is not less than the diameter of the LED substrate; the bearing component is used for bearing the LED substrate, the LED substrate comprises a substrate and an epitaxial layer located on the substrate, and the linear light spot is focused on an interface of the epitaxial layer and the substrate. According to the utility model, the thermal damage in a stripping process can be avoided, and the production efficiency is improved.
Description
Technical field
The utility model relates to a kind of system of laser lift-off LED substrate, relates in particular to a kind of system that adopts femtosecond laser to peel off the LED substrate.
Background technology
Can realize blue light by mixing other element (indium or aluminium) based on nitride based semi-conducting material, green glow, luminous dual-laser and the semiconductor laser of ultraviolet light have very widely application in fields such as demonstration, illumination and storages.And nitride belongs to wide bandgap semiconductor, has very high breakdown voltage, and the characteristics such as good thermal conductivity and electron mobility also have very large application market aspect microelectronics.
With its long-life, the superior functions such as energy-conservation and environmental protection have very high investment repayment, also are the targets that each research institution and each company are pursued based on the high brightness LED of nitride.And, the homoepitaxy of nitride also is an important goal that promotes the nitride device development, in order to realize gallium nitride substrate, present a kind of important technology is realized by hydride gas-phase epitaxy (HVPE) exactly, at the thicker gallium nitride epitaxial film of sapphire growth, utilize laser lift-off technique so that separating of Sapphire Substrate and gallium nitride thick film realizes the gallium nitride self-supported substrate.
In the prior art, in the electrode design of nitride based semiconductor and led chip, the planar structure of positive and negative electrode in substrate the same side is commonplace popular way, and such electrode design scheme also has obvious current-crowding effect except the light-emitting area that reduces chip.Efficient in order to realize, high-power, the led chip of high brightness, for fear of occurring because the electric current luminous efficiency that effect causes of blocking up reduces and heat dissipation problem, the led chip of vertical stratification is one of mainstream solution.But because sapphire belongs to insulator, and have larger hardness, cause surperficial perforate also relatively more difficult, so the led chip of vertical stratification need at first epitaxial layer of gallium nitride is peeled off from Sapphire Substrate, and further transfer on the high heat-conductivity conducting substrate, then could make electrode.
Laser lift-off technique is present generally popular lift-off technology, usually adopt the laser beam of ultraviolet light wave band in the prior art, see through sapphire and focus on sapphire and gallium nitride at the interface, because laser facula has very high energy in unit are after focusing on, so that gallium nitride thermal decomposition at the interface becomes gallium atom and nitrogen, nitrogen-atoms at high temperature further melts again, therefore can realize separating of sapphire and gallium nitride.But owing to have larger lattice paprmeter and coefficient of thermal expansion mismatch at the nitride of Grown on Sapphire Substrates; the gallium nitride rete that causes growing has larger internal stress; therefore; in the laser lift-off process; because fuel factor and thermal stress diffusion; often crackle can occur, the led chip that can cause making has larger leakage current.Especially in traditional laser lift-off process, usually utilize the local heat of laser beam that the mode of material fusing or gasification is processed, this mode is destroyed around also can making material, thereby has limited the ability of edge strength and generation fine-feature.Although pulsed ultraviolet laser of the prior art can be by directly destroying the chemical bond of material, separating substances is become atom, can reduce the impact of fire damage, but because its long burst length (being generally nanosecond), need the more energy of consumption rate to destroy chemical bond, and the heat that produces will be very large, and the heat affected area is larger.The laser action zone can be accompanied by violent thermal diffusion, this thermal diffusion meeting produces a kind of strong shock wave stress, this shock wave can cause occurring crackle or pit, not only on perpendicular to the release surface direction, very easily damage only has the epitaxial layer of gallium nitride of several micron thickness, in the horizontal direction, also can damage chip on every side.
In sum, present laser lift-off technique exists serious fire damage problem, thereby cause the led chip of the high-power vertical stratification made to have larger leakage current, also be accompanied by simultaneously the problem of low yield, even can cause crackle to be diffused into quantum trap luminous district owing to fire damage, and then damage the serious consequence of whole epitaxial wafer.And in the laser lift-off process, light beam is less through the circular light spot area behind the lens focus, stepper motor need to be controlled the array scanning that base plate carries out whole epitaxial wafer, just can reach the purpose of peeling off Sapphire Substrate, like this stripping process time longer, can affect production efficiency.
The utility model content
The system that the technical problems to be solved in the utility model provides a kind of laser lift-off LED substrate can avoid the fire damage in the stripping technology, and is conducive to enhance productivity.
For solving the problems of the technologies described above, the utility model provides a kind of system of laser lift-off LED substrate, comprising:
Femtosecond pulse seed laser source;
Frequency-doubling crystal, the femtosecond pulse that described femtosecond pulse seed laser source is sent carries out multiple frequence, and Clock Multiplier Factor is more than or equal to 2;
The laser beam expanding focusing arrangement expands and line focus the femtosecond pulse of described frequency-doubling crystal outgoing, the output line shaped laser spot, and the length of described wire hot spot is more than or equal to the diameter of LED substrate;
Load bearing component is used for carrying described LED substrate, and described LED substrate comprises substrate and the epitaxial loayer that is positioned on the described substrate, and described wire hot spot focuses on the interface place of described epitaxial loayer and substrate.
Alternatively, described laser beam expanding focusing arrangement comprises:
The extender lens composite set expands described femto-second laser pulse, makes its size cover described LED substrate;
The post lens carry out line focus to the laser beam from described extender lens composite set, export described wire hot spot.
Alternatively, described laser beam expanding focusing arrangement also comprises:
Optical filter, described femtosecond pulse is carried out transferring to described extender lens composite set after the filtering, the photon energy of the femtosecond pulse of described optical filter output is less than the energy gap of backing material in the described LED substrate, greater than the energy gap of epitaxial film materials in the described LED substrate.
Alternatively, the material of substrate is sapphire in the described LED substrate, the material of epitaxial loayer is gallium nitride, the wavelength of the femtosecond pulse that described femtosecond pulse laser sends is 780nm, described frequency-doubling crystal is the frequency tripling crystal, and described optical filter only allows the wavelength be the femtosecond pulse output of 260nm.
Alternatively, described frequency tripling crystal comprises bbo crystal, lbo crystal, ktp crystal or KDP crystal.
Alternatively, described laser beam expanding focusing arrangement also comprises:
Optical gate, the femtosecond pulse of described optical filter outgoing transfers to described extender lens composite set through behind the described optical gate.
Alternatively, described system also comprises:
Stepper motor, driving described load bearing component drives described LED substrate and moves along the direction perpendicular to described wire hot spot, described LED substrate is divided into multistep in the direction perpendicular to described wire hot spot, and it is progressively mobile so that described wire hot spot progressively scans described LED substrate that described stepper motor drives described LED substrate.
Alternatively, described system also comprises:
Isochronous controller carries out Synchronization Control to described stepper motor and optical gate, and the laser pulse number that exposes on the described LED substrate after described stepper motor whenever being moved move a step is identical.
Alternatively, described extender lens composite set comprises the first bull's-eye and the second bull's-eye, described femtosecond pulse is successively through outgoing behind described the first bull's-eye and the second bull's-eye, wherein the focal length of the first bull's-eye is less than the focal length of the second bull's-eye, and the distance between described the first bull's-eye and the second bull's-eye equals the focal length sum of the two.
Alternatively, described system also comprises:
The first governor motion is used for driving each convex lens translation of described post lens and extender lens composite set, and the direction of translation is along the direction of propagation of described femtosecond pulse.
Alternatively, the burst length in described femtosecond pulse seed laser source is between 10
-14S ~ 10
-16S, pulse recurrence frequency is between 1kHz ~ 50MHz.
Alternatively, described system also comprises: to the crystal axis of described frequency-doubling crystal to the second governor motion that is rotated.
Compared with prior art, the utlity model has following advantage:
In the system of the laser lift-off LED substrate of the utility model embodiment, the femtosecond pulse that adopts frequency-doubling crystal that femtosecond pulse seed laser source is sent carries out multiple frequence, afterwards this femtosecond pulse is expanded and line focus, form the wire hot spot, this wire hot spot focuses on the interface place of substrate and epitaxial loayer, by along the one-dimensional scanning perpendicular to this wire hot spot, substrate and epitaxial loayer are peeled off.Because what the technical solution of the utility model adopted is femtosecond pulse, burst length be 1,000,000 of the common nanosecond laser pulses time/, be far smaller than the time that heat that laser produces is delivered to lattice, therefore can thoroughly eliminate fire damage that the interaction of laser and LED backing material produces to the impact of LED substrate, greatly improve the production yield.
In addition, in the laser lift-off process among the utility model embodiment, only need to carry out one-dimensional square to scanning, compare with traditional array scanning mode, its efficient is higher.
Description of drawings
Fig. 1 is the structured flowchart of system of the laser lift-off LED substrate of the utility model embodiment;
Fig. 2 is the schematic flow sheet of the LED substrate desquamation method of the utility model embodiment.
The specific embodiment
The utility model is described in further detail below in conjunction with specific embodiments and the drawings, but should not limit protection domain of the present utility model with this.
Fig. 1 shows the system of the laser lift-off LED substrate of present embodiment, comprising: femtosecond pulse seed laser source 12, frequency-doubling crystal 20, optical filter 23, laser beam expanding focusing arrangement (comprising optical gate 21, extender lens composite set, post lens 11), load bearing component 8, isochronous controller 22.
Wherein, femtosecond pulse seed laser source 12 is used for sending femtosecond pulse.As a nonrestrictive example, the femtosecond pulse seed laser source 12 in the present embodiment can be ultrashort ultrafast pulse laser instrument, and design parameter is as follows: the burst length is between 10
-14S ~ 10
-16S, pulse recurrence frequency is between 1kHz ~ 50MHz, and the femtosecond pulse wavelength that it sends is about 800nm, is specially 780nm in the present embodiment.
The femtosecond pulse that send in femtosecond pulse seed laser source 12 is successively through being incident to the LED substrate on the load bearing component 8 behind frequency-doubling crystal 20, optical filter 23, optical gate 21, the first convex lens 9 and the second convex lens 10, the post lens 11.This LED substrate comprises stacking substrate 100 and epitaxial loayer 101 in the present embodiment; wherein epitaxial loayer 101 is towards load bearing component 8; substrate 100 is towards the direction of femtosecond pulse incident; can also be provided with diaphragm 102 between epitaxial loayer 101 and the load bearing component 8, to prevent from externally prolonging the damage of layer 101.
As shown in Figure 1, present embodiment is defined as the x-y plane with the plane at LED substrate surface place, and the direction that femtosecond pulse is propagated is defined as the z direction, and the z perpendicular direction is in the x-y plane.
Wherein, the femtosecond pulse that send in 20 pairs of femtosecond pulse seed lasers of frequency-doubling crystal source 12 carries out multiple frequence, Clock Multiplier Factor is more than or equal to 2, Clock Multiplier Factor is 3 in the present embodiment, be that frequency-doubling crystal 20 is the frequency tripling crystal, for example can be bbo crystal, lbo crystal, ktp crystal or KDP crystal, well known to a person skilled in the art that perhaps other can carry out to femtosecond pulse the crystal of frequency multiplication.Through after the frequency tripling, the wavelength of the laser of output is 260nm.
Need to prove that the choice criteria of frequency-doubling crystal 20 is as follows: after the femtosecond pulse frequency multiplication that femtosecond pulse seed laser source 12 is sent, the photon energy of emitting laser is less than the energy gap of backing material, greater than the energy gap of epitaxial film materials.
In addition, this system can also comprise the second governor motion (not shown in figure 1), to the crystal axis of frequency-doubling crystal 20 to being rotated, so that the laser beam outgoing of target frequency.
The laser beam expanding focusing arrangement is used for femtosecond pulse is expanded and line focus, the output line shaped laser spot, and the length of this wire hot spot is more than or equal to the diameter of LED substrate.In the present embodiment, this laser beam expanding focusing arrangement comprises: optical filter 23, femtosecond pulse to frequency-doubling crystal 20 outgoing carries out filtering, the photon energy of the femtosecond pulse of its output is greater than the energy gap of epitaxial loayer 101 materials, less than the energy gap of substrate 100 materials, in the present embodiment, the material of epitaxial loayer 101 is gallium nitride, the material of substrate 100 is sapphire, and optical filter 23 only allows the laser beam of wavelength 260nm export; The extender lens composite set expands femtosecond pulse, makes its size can cover whole LED substrate; Post lens 11 carry out line focus to the laser beam from the extender lens composite set, the output line shaped laser spot.In addition, this laser beam expanding focusing arrangement also comprises: optical gate 21, laser beam be through transferring to the extender lens composite set behind the optical gate, and the switching of optical gate 21 can be controlled whether outgoing of laser beam.
Wherein, the extender lens composite set comprises the first bull's-eye 9 and the second bull's-eye 10, laser beam sees through the first bull's-eye 9 and the 10 afterwards outgoing of the second bull's-eye successively, wherein the focal length 9 of the first bull's-eye is less than the focal length of the second bull's-eye 10, and the distance between the first bull's-eye 9 and the second bull's-eye 10 equals the focal length sum of the two.More specifically, the focal length of the second bull's-eye 10 is 5 ~ 10 times of focal length of the first bull's-eye 9, so that being extended to from original size 5mm ~ 10mm, hot spot can cover whole LED substrate, for example for 2 cun LED substrate, the diameter of the laser beam after expanding is 60mm, for 4 cun or larger sized epitaxial wafer, can come continuous expansion of laser light spot size with more groups of bull's-eye combinations.
The system of the laser lift-off LED substrate of present embodiment also comprises the first governor motion (not shown in figure 1), can regulate the first bull's-eye 9 and the second bull's-eye 10 along the position of optical axis, namely can drive the direction translation that the first bull's-eye 9 and the second bull's-eye 10 are propagated along laser beam.
Laser beam after expanding carries out line focus through post lens 11 to laser beam, and hot spot is compressed at x or a certain single direction of y, forms the wire hot spot.In addition, the adjustment structure in the present embodiment also can be carried out translation by coupled columns lens 11, thereby with the interface place of the focal position adjustment of wire hot spot substrate 100 and epitaxial loayer 101 to the LED substrate.Owing to before expanded, thereby the length of the wire hot spot of post lens 11 outgoing is equal to, or greater than the diameter of LED substrate.
In the present embodiment, load bearing component 8 is driven by the stepper motor (not shown in figure 1), can drive the LED substrate and move along the direction perpendicular to the wire hot spot, for example in the x-direction or the y direction move.For example, the LED substrate can be divided into multistep in the direction perpendicular to the wire hot spot, it is progressively mobile that stepper motor drives the LED substrate, so that described wire hot spot progressively scans whole LED substrate.
In addition, in the present embodiment the whole LED substrate of step motor control carry out perpendicular to the direction of wire hot spot one-dimensional square to scanning, finally reach the purpose of the whole LED substrate of processing, such scan mode is compared with the lattice array scanning repeatedly of routine, greatly shorten process time, improved production efficiency.
In the system of the laser lift-off LED substrate that present embodiment provides, the wavelength that send in femtosecond pulse seed laser source is that the laser of 780nm obtains the laser that wavelength is 260nm through the frequency tripling crystal, optical filter only allows the Laser output behind the frequency tripling, through entering the extender lens combination behind the optical gate, the spot size of expanded light beam, can cover whole LED substrate to be processed, and then through the post lens, so that light beam is only at the one-dimensional square line focus that makes progress, light spot shape after the focusing becomes wire from circle, its line length is equal to or greater than the diameter of LED substrate, and the focal plane is positioned at the interface of substrate and epitaxial loayer.Isochronous controller sends start pulse signal Synchronization Control stepper motor and optical gate, makes the two operating frequency consistent.
Adopt the advantage at the bottom of the femtosecond laser peeling liner to be: the burst length of femtosecond pulse be 1,000,000 of the common nanosecond laser pulses time/, be far smaller than the time that heat that laser produces is delivered to lattice, this specific character can thoroughly be eliminated thermal diffusion and fire damage to the impact of epitaxial loayer; Femtosecond pulse has the characteristic of high instantaneous energy, in the situation of total pulse energy less than common nanosecond laser, still can reach the purpose of decomposing backing material, and because its less output pulse energy, can so that in stripping process, because can reaching, the impact of the stress diffusion couple epitaxial loayer that the thermal shock effect that laser action produces brings minimize; The repetition rate of ultrashort ultrafast pulse laser instrument is much larger than the repetition rate of common nanosecond laser, can realize that therefore ultrafast processing peels off, and greatly enhances productivity.
Present embodiment also provides a kind of stripping means of LED substrate, and the method is used system shown in Figure 1, and its flow process comprises as shown in Figure 2:
Step S21 provides the LED substrate, and described LED substrate comprises substrate and the epitaxial loayer that is positioned on the described substrate;
Step S22 conforms to translate substrate with described epitaxial loayer;
Step S23 is placed on described LED substrate on the load bearing component of described system, and described translate substrate is towards described load bearing component;
Step S24 focuses on the wire hot spot of the laser beam expanding focusing arrangement of described system output at the interface place of described substrate and epitaxial loayer;
Step S25 drives described load bearing component and progressively scans along the direction perpendicular to described wire hot spot, with described substrate desquamation.
Below in conjunction with Fig. 1 and Fig. 2 this stripping means is elaborated.
Connect by metal level or be bonded on the translate substrate material 102 of high heat-conductivity conducting being grown in epitaxial loayer 101 on the substrate 100, then the LED substrate behind the bonding is placed on the load bearing component 8.
The Ear Mucosa Treated by He Ne Laser Irradiation that send in femtosecond pulse seed laser source 12 is on frequency tripling crystal 20, the crystalline axis direction of rotation frequency tripling crystal 20, so that frequency tripling efficient reaches maximum, that is to say that most of wavelength is that the laser of 780nm all is converted to the laser that wavelength is 260nm, the remainder that is not converted is filtered out by optical filter 23, is that the laser of 260nm is by optical filter 23 so that only have wavelength.
Along on the light path of laser propagation, adjust the horizontal level of the first bull's-eye 9 and the second bull's-eye 10, so that the light beam that sees through the second bull's-eye 10 is through collimation, the circular light spot size of sending expands to from green diameter 5mm-10mm can cover whole LED substrate.If through one group of round lens combined light spot size still less than the size of LED substrate, can be along on the light path direction of propagation, continue to increase one or more groups identical round lens combination in the back of the second bull's-eye 10 and constantly enlarge spot size, until can cover the epitaxial wafer of whole different size, simultaneously by regulate each round lens move horizontally guarantee to see through the light beam of last round lens through collimation..
The light beam that the process of sending from the second bull's-eye 10 expands and collimates continues to pass through post lens 11 along the direction that light path is propagated, only x or y direction carry out one-dimensional square to convergence, the horizontal level of adjustment column lens 11 makes its focal position at the interface place of substrate 100 and epitaxial loayer 101, light spot shape after the convergence becomes wire, and its line length equals or the diameter of the LED substrate that is slightly larger than.
Control isochronous controller 22 by computer programming or other modes and send start pulse signals and send simultaneously stepper motor and optical gate 21 to, that is to say that the time that time for exposure of having set optical gate and stepper motor rest on each scanning step is 1ms-10ms.Set the scan mode of stepper motor, the edge, scanning direction of control load bearing component 8 is perpendicular to wire hot spot direction, that is to say along x direction (if the wire hot spot in the y-direction) or y direction (if the wire hot spot in the y-direction) run-down, scanning step may be controlled to 0.5-2um, until substrate 100 is peeled off.Substrate 100 after peeling off can repeat to recycle, further to reduce production costs.
Although the utility model with preferred embodiment openly as above; but it is not to limit the utility model; any those skilled in the art are not within breaking away from spirit and scope of the present utility model; can make possible change and modification, therefore protection domain of the present utility model should be as the criterion with the scope that the utility model claim is defined.
Claims (12)
1. the system of a laser lift-off LED substrate is characterized in that, comprising:
Femtosecond pulse seed laser source;
Frequency-doubling crystal, the femtosecond pulse that described femtosecond pulse seed laser source is sent carries out multiple frequence, and Clock Multiplier Factor is more than or equal to 2;
The laser beam expanding focusing arrangement expands and line focus the femtosecond pulse of described frequency-doubling crystal outgoing, the output line shaped laser spot, and the length of described wire hot spot is more than or equal to the diameter of LED substrate;
Load bearing component is used for carrying described LED substrate, and described LED substrate comprises substrate and the epitaxial loayer that is positioned on the described substrate, and described wire hot spot focuses on the interface place of described epitaxial loayer and substrate.
2. the system of laser lift-off LED substrate according to claim 1 is characterized in that, described laser beam expanding focusing arrangement comprises:
The extender lens composite set expands described femto-second laser pulse, makes its size cover described LED substrate;
The post lens carry out line focus to the laser beam from described extender lens composite set, export described wire hot spot.
3. the system of laser lift-off LED substrate according to claim 2 is characterized in that, described laser beam expanding focusing arrangement also comprises:
Optical filter, described femtosecond pulse is carried out transferring to described extender lens composite set after the filtering, the photon energy of the femtosecond pulse of described optical filter output is less than the energy gap of backing material in the described LED substrate, greater than the energy gap of epitaxial film materials in the described LED substrate.
4. the system of laser lift-off LED substrate according to claim 3, it is characterized in that, the material of substrate is sapphire in the described LED substrate, the material of epitaxial loayer is gallium nitride, the wavelength of the femtosecond pulse that described femtosecond pulse laser sends is 780nm, described frequency-doubling crystal is the frequency tripling crystal, and described optical filter only allows the wavelength be the femtosecond pulse output of 260nm.
5. the system of laser lift-off LED substrate according to claim 4 is characterized in that, described frequency tripling crystal comprises bbo crystal, lbo crystal, ktp crystal or KDP crystal.
6. the system of laser lift-off LED substrate according to claim 3 is characterized in that, described laser beam expanding focusing arrangement also comprises:
Optical gate, the femtosecond pulse of described optical filter outgoing transfers to described extender lens composite set through behind the described optical gate.
7. the system of laser lift-off LED substrate according to claim 6 is characterized in that, also comprises:
Stepper motor, driving described load bearing component drives described LED substrate and moves along the direction perpendicular to described wire hot spot, described LED substrate is divided into multistep in the direction perpendicular to described wire hot spot, and it is progressively mobile so that described wire hot spot progressively scans described LED substrate that described stepper motor drives described LED substrate.
8. the system of laser lift-off LED substrate according to claim 7 is characterized in that, also comprises:
Isochronous controller carries out Synchronization Control to described stepper motor and optical gate, and the laser pulse number that exposes on the described LED substrate after described stepper motor whenever being moved move a step is identical.
9. the system of laser lift-off LED substrate according to claim 2, it is characterized in that, described extender lens composite set comprises the first bull's-eye and the second bull's-eye, described femtosecond pulse is successively through outgoing behind described the first bull's-eye and the second bull's-eye, wherein the focal length of the first bull's-eye is less than the focal length of the second bull's-eye, and the distance between described the first bull's-eye and the second bull's-eye equals the focal length sum of the two.
10. the system of laser lift-off LED substrate according to claim 9 is characterized in that, also comprises:
The first governor motion is used for driving each convex lens translation of described post lens and extender lens composite set, and the direction of translation is along the direction of propagation of described femtosecond pulse.
11. the system of laser lift-off LED substrate according to claim 1 is characterized in that, the burst length in described femtosecond pulse seed laser source is between 10
-14S ~ 10
-16S, pulse recurrence frequency is between 1kHz ~ 50MHz.
12. the system of laser lift-off LED substrate according to claim 1 is characterized in that, also comprises: to the crystal axis of described frequency-doubling crystal to the second governor motion that is rotated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220225992 CN202655797U (en) | 2012-05-18 | 2012-05-18 | System for laser lift-off of LED (Light Emitting Diode) substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220225992 CN202655797U (en) | 2012-05-18 | 2012-05-18 | System for laser lift-off of LED (Light Emitting Diode) substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202655797U true CN202655797U (en) | 2013-01-09 |
Family
ID=47450730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220225992 Withdrawn - After Issue CN202655797U (en) | 2012-05-18 | 2012-05-18 | System for laser lift-off of LED (Light Emitting Diode) substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202655797U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102699537A (en) * | 2012-05-18 | 2012-10-03 | 杭州士兰明芯科技有限公司 | System and method for peeling LED substrates by using laser |
| WO2016180849A1 (en) * | 2015-05-14 | 2016-11-17 | Rfhic Corporation | Method of fabricating diamond-semiconductor composite substrates |
| CN108838562A (en) * | 2014-11-27 | 2018-11-20 | 西尔特克特拉有限责任公司 | It is separated by means of the solid of material conversion |
| CN112821180A (en) * | 2020-12-31 | 2021-05-18 | 武汉安扬激光技术有限责任公司 | Green light femtosecond laser and processing and using method thereof |
-
2012
- 2012-05-18 CN CN 201220225992 patent/CN202655797U/en not_active Withdrawn - After Issue
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102699537A (en) * | 2012-05-18 | 2012-10-03 | 杭州士兰明芯科技有限公司 | System and method for peeling LED substrates by using laser |
| CN102699537B (en) * | 2012-05-18 | 2015-11-04 | 杭州士兰明芯科技有限公司 | The system and method for laser lift-off LED substrate |
| US11407066B2 (en) | 2014-01-15 | 2022-08-09 | Siltectra Gmbh | Splitting of a solid using conversion of material |
| CN108838562A (en) * | 2014-11-27 | 2018-11-20 | 西尔特克特拉有限责任公司 | It is separated by means of the solid of material conversion |
| US11833617B2 (en) | 2014-11-27 | 2023-12-05 | Siltectra Gmbh | Splitting of a solid using conversion of material |
| WO2016180849A1 (en) * | 2015-05-14 | 2016-11-17 | Rfhic Corporation | Method of fabricating diamond-semiconductor composite substrates |
| CN107636800A (en) * | 2015-05-14 | 2018-01-26 | Rfhic公司 | The method for manufacturing diamond semiconductors coupling substrate |
| US10043700B2 (en) | 2015-05-14 | 2018-08-07 | Rfhic Corporation | Method of fabricating diamond-semiconductor composite substrates |
| CN107636800B (en) * | 2015-05-14 | 2020-11-20 | Rfhic公司 | Method for manufacturing diamond semiconductor composite substrate |
| CN112821180A (en) * | 2020-12-31 | 2021-05-18 | 武汉安扬激光技术有限责任公司 | Green light femtosecond laser and processing and using method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102699537B (en) | The system and method for laser lift-off LED substrate | |
| CN101879657B (en) | Solid laser lift equipment and stripping means | |
| US7241667B2 (en) | Method of separating layers of material | |
| CN101882578B (en) | Integral solid laser lift-off and cutting equipment | |
| CN202655797U (en) | System for laser lift-off of LED (Light Emitting Diode) substrate | |
| CN102005517B (en) | Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus | |
| CN105826434B (en) | A kind of production method of diamond heat-sink GaN base LED | |
| CN100463102C (en) | Large-area and low-power laser stripping method for GaN-base epitaxial layer | |
| US20140273329A1 (en) | Solar cell laser scribing methods | |
| CN102769083A (en) | Flip-chip bonding nitride light emitting diode (LED), light-transmission substrate thereof, and methods for manufacturing light-transmission substrate | |
| CN102117769A (en) | Manufacturing method of light-emitting diode chip | |
| CN215118903U (en) | Chip transfer system | |
| CN102142397A (en) | Light-emitting diode (LED) and method for manufacturing same | |
| CN103094437A (en) | Manufacturing method of high-power light-emitting diode (LED) chips | |
| CN113399822A (en) | Laser-assisted in-situ mass transfer method and system | |
| JP5665373B2 (en) | Thin film processing method and photoelectric conversion device manufacturing method | |
| EP2290706B1 (en) | Method of fabricating light emitting diode using laser lift-off technique and using laser lift-off apparatus having heater | |
| CN202721173U (en) | A nitride light emitting diode bonded by flip-chip technology and a light-transparent substrate thereof | |
| WO2021082516A1 (en) | Light-emitting diode chip, growth substrate and light-emitting diode chip transfer apparatus | |
| CN117283152A (en) | Method and device for cutting silicon carbide crystal ingot by high-efficiency laser | |
| CN101837515A (en) | Solar silicon cell nanosecond-pulse green laser scriber | |
| CN102598310A (en) | Laser drilling of vias in back contact solar cells | |
| CN113594300B (en) | Laser scribing method for light-transmitting power generation glass | |
| CN207946631U (en) | A kind of solid and frequency Sodium guide star spectrum continuous laser output device | |
| CN202667932U (en) | Device of laser-made silicon solar battery electrode printing screen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130109 Effective date of abandoning: 20151104 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |